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Renesas R1LV0208BSA-7SI#S0
- Part No.:
- R1LV0208BSA-7SI#S0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-TFSOP (0.465", 11.80mm Width)
- Datasheet:
-
R1LV0208BSA-7SI#S0.pdf
- Description:
- IC SRAM 2MBIT PARALLEL 32STSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,682
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Product details
Overview
R1LV0208BSA-7SI#S0 from Renesas Electronics is a 2Mb low-power static RAM organized as 262,144 words × 8 bits, fabricated in 0.15 µm CMOS/TFT technology, operating from a single 2.7V–3.6V supply with 55 ns access time and 1 µA typical standby current at 3.0V, used in battery-backed memory systems requiring no refresh and TTL-compatible interfacing.
For engineers reviewing the R1LV0208BSA-7SI#S0 datasheet, R1LV0208BSA-7SI#S0 pinout, R1LV0208BSA-7SI#S0 application, or R1LV0208BSA-7SI#S0 equivalent, key selection criteria include sTSOP-32 package compatibility, dual chip select architecture (CS1#/CS2), data retention down to 2.0V, and OR-tie capable three-state outputs for bus sharing.
Technical Context
The R1LV0208BSA-7SI#S0 implements a fully asynchronous SRAM architecture with no internal clocks or refresh circuitry, relying on external address latching and control timing. Its dual chip select (CS1# active-low, CS2 active-high) enables flexible memory expansion and bank selection without additional logic.
It supports true read/write cycles with independent OE# and WE# controls, enabling output disable during write operations and preventing bus contention. The device maintains data integrity during low-voltage retention mode when either CS2 ≤ 0.2V or CS1# ≥ Vcc−0.2V, drawing only 1–10 µA across −40°C to +85°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 262,144 × 8-bit (2 Mb); supports byte-wide data interface without external multiplexing |
| Supply voltage | 2.7V–3.6V; compatible with 3.3V logic domains and battery-operated systems |
| Access time | 55 ns max; ensures deterministic timing for microcontroller and FPGA memory interfaces |
| Standby current | 1 µA typical at 3.0V/25°C; enables multi-year battery backup in real-time clock and configuration memory |
| Data retention voltage | 2.0V min; preserves stored data during brown-out or backup power transitions |
| I/O compatibility | TTL-level inputs and outputs; eliminates level-shifting requirements in legacy 3.3V systems |
| Package | 32-pin sTSOP (8 mm × 13.4 mm); surface-mount compatible with standard reflow profiles |
Pinout & Package
Package: 32-pin plastic sTSOP (8 mm × 13.4 mm), RoHS-compliant, JEDEC MO-153 compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Vcc | Power supply | Primary 2.7–3.6V supply rail; decoupling required within 10 mm of pin |
| Vss (GND) | Ground reference | Signal and power return path; must be connected to low-impedance ground plane |
| A0–A17 | Address inputs | 18-bit address bus supporting full 256k-word addressing; A11–A17 used for row decoding |
| DQ0–DQ7 | Data I/O | Bidirectional 8-bit data bus with three-state outputs; supports OR-tie for shared bus architectures |
| CS1# | Chip select 1 | Active-low enable; primary chip select; low enables memory access when CS2 is high |
| CS2 | Chip select 2 | Active-high enable; secondary chip select; high enables memory access when CS1# is low |
| WE# | Write enable | Active-low write strobe; initiates write cycle on falling edge with CS1# low and CS2 high |
| OE# | Output enable | Active-low output control; gates DQ outputs to prevent bus contention during reads |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates system-level refresh overhead and timing constraints, simplifying firmware and reducing CPU load |
| Low-voltage data retention | Maintains valid data at Vcc ≥ 2.0V, enabling seamless transition to backup power without data loss |
| Dual chip select architecture | Supports memory expansion up to 4 MB using CS1# and CS2 without external decode logic |
| OR-tie capable outputs | Allows multiple R1LV0208BSA-7SI#S0 devices to share a common data bus without external wired-OR components |
| TTL-compatible I/O | Direct interface with 3.3V microcontrollers and FPGAs without level translators or pull-up resistors |
Applications
| Industrial PLC Data Buffer | Medical Device Configuration Memory |
|---|---|
Use Scenario: Storing runtime I/O mapping and calibration tables in programmable logic controllers with intermittent power loss risk. IC Role / Device Role / Timing Role: Nonvolatile configuration storage with zero-refresh operation and fast random access during scan cycles. Use Value: Ensures deterministic 55 ns read latency and <1 µA standby draw during sleep modes, extending battery life in portable PLC modules. | Use Scenario: Retaining patient-specific therapy parameters and device settings in battery-powered infusion pumps and monitors. IC Role / Device Role / Timing Role: Battery-backed SRAM holding critical configuration data during AC power failure or battery swap. Use Value: Guarantees data retention down to 2.0V Vcc and draws only 1–10 µA across industrial temperature range, minimizing backup battery drain. |
| Automotive Telematics Log Storage | Smart Meter Firmware Parameter Cache |
Use Scenario: Capturing GPS position logs and diagnostic event timestamps in vehicle telematics units with cold-cranking voltage dips. IC Role / Device Role / Timing Role: High-reliability data buffer preserving timestamped logs during 2.0–3.6V supply transients. Use Value: Maintains data integrity through brown-out events via low-Vcc retention mode triggered by CS2 ≤ 0.2V or CS1# ≥ Vcc−0.2V. | Use Scenario: Caching tariff schedules, metering constants, and communication keys in AMI smart meters with long-life lithium batteries. IC Role / Device Role / Timing Role: Low-power SRAM providing fast parameter access while minimizing energy consumption over 15+ year deployments. Use Value: Achieves 1 µA typical standby current at 25°C and supports OR-tie bus sharing with other peripherals to reduce BOM count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 16-bit bus (256K × 16), 10 ns access, 3.3V only, SOJ-44 package | Higher bandwidth but larger footprint and higher standby current (2 µA typ) | Choose for wider data paths where PCB space allows and faster access is critical |
| AS6C4008-55PCN | 2.7–5.5V supply, 55 ns access, 32-pin SOP, 2 µA standby at 3.3V | Wider voltage range but lacks low-Vcc retention below 2.7V and uses larger SOP package | Choose for mixed-voltage designs where 5V tolerance is needed and sTSOP is not required |
Compared with IS61LV25616AL-10TLI and AS6C4008-55PCN, the R1LV0208BSA-7SI#S0 offers superior ultra-low-power retention (2.0V min, 1 µA typ), compact sTSOP-32 packaging, and dual-chip-select expandability-making it optimal for space-constrained, battery-sensitive embedded systems.
Availability
R1LV0208BSA-7SI#S0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device configuration memory, and automotive telematics log storage requiring stable component supply and long-term lifecycle support.
Supply support for R1LV0208BSA-7SI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV0208BSA series is part of Renesas' Advanced LPSRAM product line, designed specifically for battery-operated and low-power embedded systems requiring reliable, no-refresh, TTL-compatible memory with extended data retention at reduced supply voltages.
FAQ
What is the maximum access time specification for the R1LV0208BSA-7SI#S0?
The R1LV0208BSA-7SI#S0 has a maximum access time of 55 ns, measured as address access time (tAA), chip select access time (tACS1/tACS2), and read cycle time (tRC). This value is guaranteed across the full operating temperature range (−40°C to +85°C) and supply voltage range (2.7V–3.6V), ensuring deterministic timing in real-time embedded systems.
Does the R1LV0208BSA-7SI#S0 require periodic refresh cycles like DRAM?
No, the R1LV0208BSA-7SI#S0 is a static RAM and requires no refresh cycles. It retains data as long as power is applied and appropriate control signals are maintained. This eliminates firmware overhead and timing constraints associated with DRAM refresh, making the R1LV0208BSA-7SI#S0 ideal for simple, reliable memory interfacing in microcontroller-based designs.
What is the minimum supply voltage at which the R1LV0208BSA-7SI#S0 retains stored data?
The R1LV0208BSA-7SI#S0 guarantees data retention down to 2.0V Vcc under specified conditions-either when CS2 ≤ 0.2V or CS1# ≥ Vcc−0.2V. This low-voltage retention capability enables robust operation during brown-out events and extends battery life in backup power applications without data loss.
Can multiple R1LV0208BSA-7SI#S0 devices share the same data bus?
Yes, the R1LV0208BSA-7SI#S0 features three-state outputs with OR-tie capability, allowing multiple devices to drive a common 8-bit data bus without external wired-OR components. Proper control of CS1#, CS2, and OE# ensures only one device drives the bus at any time, preventing contention and enabling scalable memory expansion.
What package type is used for the R1LV0208BSA-7SI#S0 and what are its key mechanical dimensions?
The R1LV0208BSA-7SI#S0 is housed in a 32-pin plastic sTSOP (shrink thin small outline package) measuring 8.0 mm × 13.4 mm with 0.5 mm lead pitch. This JEDEC MO-153 compliant package supports fine-pitch surface-mount assembly and provides thermal and electrical performance suitable for high-density industrial PCB layouts.
R1LV0208BSA-7SI#S0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-TFSOP (0.465", 11.80mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 2Mbit
- Memory Organization:
- 256K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-sTSOP
R1LV0208BSA-7SI#S0 FAQ
1.How can I place an order for R1LV0208BSA-7SI#S0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0208BSA-7SI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0208BSA-7SI#S0 reliable?
The price and inventory of R1LV0208BSA-7SI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0208BSA-7SI#S0 is usually 5 days.
3.What payment methods are accepted for R1LV0208BSA-7SI#S0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0208BSA-7SI#S0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0208BSA-7SI#S0?
R1LV0208BSA-7SI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0208BSA-7SI#S0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0208BSA-7SI#S0?
For technical support, including R1LV0208BSA-7SI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0208BSA-7SI#S0 requirements.
6.How does Aetrix verify that R1LV0208BSA-7SI#S0 is sourced from the original manufacturer or authorized distributors?
All R1LV0208BSA-7SI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0208BSA-7SI#S0 meets industry standards.
7.What is the process for return or replacement of R1LV0208BSA-7SI#S0?
All R1LV0208BSA-7SI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0208BSA-7SI#S0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0208BSA-7SI#S0 part is unused and in its original packaging.
Return procedure for R1LV0208BSA-7SI#S0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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