Renesas R1LV0216BSB-5SI#B0

Overview

R1LV0216BSB-5SI#B0 from Renesas Electronics is a 2Mb low-power static RAM organized as 131,072 × 16-bit, fabricated in 0.15µm CMOS/TFT process, operating from 2.7V to 3.6V with 55ns access time and 1µA typical standby current at 3.0V - used in battery-backed memory subsystems for industrial controllers and portable instrumentation.

For engineers reviewing the R1LV0216BSB-5SI#B0 datasheet, R1LV0216BSB-5SI#B0 pinout, R1LV0216BSB-5SI#B0 application, or R1LV0216BSB-5SI#B0 equivalent, key selection criteria include TSOP (II) 44-pin compatibility, byte-selectable write control via LB#/UB#, TTL-compatible I/O, and no-refresh operation for deterministic timing in embedded data logging systems.

Technical Context

The R1LV0216BSB-5SI#B0 implements a fully asynchronous SRAM architecture with independent upper/lower byte enable (UB#/LB#), chip select (CS#), output enable (OE#), and write enable (WE#) controls - enabling partial-word writes without external logic. Its block diagram confirms direct address decoding of A0–A16 and bidirectional DQ0–DQ15 I/O with three-state output buffers.

All DC and AC timing parameters are specified across –40°C to +85°C and 2.7V–3.6V Vcc, including tAA ≤ 55ns, tOE ≤ 30ns, and ISB1 = 1µA at 25°C - supporting reliable low-voltage retention down to 2.0V with controlled CS# or LB#/UB# assertion per the data retention waveform.

Key Specifications

Pinout & Package

Package: 44-pin plastic TSOP (II), 400-mil body width, JEDEC standard footprint with gull-wing leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power asynchronous SRAM applications.

Compared with CY62128ELL-45ZSXI and AS6C4008-55PCN, the R1LV0216BSB-5SI#B0 delivers superior ultra-low-power standby performance (1µA vs. 5µA/3µA) and guaranteed 2.0V data retention - making it optimal for battery-critical, thermally constrained, or safety-certified designs where deterministic timing and minimal quiescent draw are mandatory.

Availability

R1LV0216BSB-5SI#B0 is available at Aetrix Electronics and suitable for industrial data loggers, portable medical monitors, smart energy meters, railway signaling controllers, and battery-backed instrumentation requiring stable component supply across extended product lifecycles.

Supply support for R1LV0216BSB-5SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.

The R1LV0216BSB-5SI#B0 belongs to Renesas' Advanced LPSRAM family - engineered specifically for ultra-low-power, no-refresh memory applications in battery-operated and safety-critical embedded systems.

FAQ

What is the maximum operating frequency supported by the R1LV0216BSB-5SI#B0?

The R1LV0216BSB-5SI#B0 is an asynchronous SRAM with no internal clock; its speed is defined by access time, not frequency. With a 55ns access time, it supports bus cycles up to approximately 18.2 MHz in worst-case read/write scenarios - actual throughput depends on controller timing margins and bus protocol overhead. The R1LV0216BSB-5SI#B0 does not require clock synchronization or setup/hold timing beyond datasheet-specified tAS and tDH.

Does the R1LV0216BSB-5SI#B0 support partial-word writes without external logic?

Yes, the R1LV0216BSB-5SI#B0 natively supports partial-word writes using dedicated LB# (pins 32–33) and UB# (pin 31) controls. Asserting LB# low while keeping UB# high writes only DQ0–DQ7; asserting UB# low while LB# remains high writes only DQ8–DQ15. This eliminates the need for external byte-mask logic in 16-bit bus systems. The R1LV0216BSB-5SI#B0 operation table explicitly defines these modes.

Can the R1LV0216BSB-5SI#B0 retain data at voltages below 2.7V?

Yes, the R1LV0216BSB-5SI#B0 guarantees data retention down to 2.0V when CS# or LB#/UB# are held in retention mode per the Low Vcc Data Retention Characteristics table. At 2.0V and 25°C, ICCDR is 1µA typical - enabling multi-year storage on small backup cells. Operation below 2.7V is not permitted for active read/write; retention mode requires specific control pin biasing as shown in the retention waveform diagrams.

Is the R1LV0216BSB-5SI#B0 pin-compatible with other 44-pin TSOP (II) SRAMs?

The R1LV0216BSB-5SI#B0 uses the JEDEC-standard 44-pin TSOP (II) footprint (400-mil width) and shares identical pin numbering and signal assignments (e.g., A0–A16, DQ0–DQ15, CS#, WE#, OE#, LB#, UB#, Vcc, Vss) with industry-standard 128k×16 SRAMs. However, functional compatibility requires verification of timing (tAA, tOE), voltage (2.7–3.6V only), and control logic - the R1LV0216BSB-5SI#B0 is not a drop-in replacement for 5V-only or faster 45ns parts without design validation.

What is the significance of the "-5SI#B0" suffix in R1LV0216BSB-5SI#B0?

The "-5SI#B0" suffix denotes the specific ordering variant: "5" indicates 55ns access time, "S" specifies the 400-mil 44-pin TSOP (II) package, "I" designates the industrial temperature range (–40°C to +85°C), and "#B0" identifies the tray packaging format per Renesas' ordering nomenclature. This exact suffix corresponds to the part documented in R10DS0273EJ0101 Rev.1.01 and is distinct from tape-and-reel variants like #S1.