Renesas R1LV0216BSB-5SI#B1

Overview

R1LV0216BSB-5SI#B1 from Renesas Electronics is a 2Mb low-power static RAM organized as 131,072 × 16-bit, fabricated in 0.15µm CMOS/TFT technology, operating from 2.7V–3.6V with 55 ns access time and 1 µA typical standby current at 3.0V, used in battery-backed memory systems requiring no refresh and TTL-compatible interfacing.

For engineers reviewing the R1LV0216BSB-5SI#B1 datasheet, R1LV0216BSB-5SI#B1 pinout, R1LV0216BSB-5SI#B1 application, or R1LV0216BSB-5SI#B1 equivalent, key selection criteria include single-supply 2.7–3.6V operation, byte-selectable write capability via LB#/UB#, 44-pin TSOP (II) package compatibility, and sub-1µA data retention current at 2.0V V_CC.

Technical Context

This SRAM implements a fully asynchronous architecture with no clocks or refresh cycles required. Its address buffer, I/O drivers, and byte-enable logic are all controlled by CS#, WE#, OE#, LB#, and UB# signals, enabling flexible word/byte-level read/write operations without external timing control.

The device supports three independent write modes-lower byte, upper byte, and full word-determined by the combination of LB# and UB# states during active CS# and WE#. Data retention is maintained down to 2.0V V_CC with ISB1 ≤ 10 µA at +85°C when CS# or LB#/UB# are held high.

Key Specifications

Pinout & Package

44-pin plastic TSOP (II) package, 400-mil body width, JEDEC-standard footprint with gull-wing leads for reflow soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power SRAM applications.

Compared with CY62128ELL-55ZSXIT and IS62WV25616BLL-55NLI, the R1LV0216BSB-5SI#B1 offers tighter 2.0V data retention and lower 1 µA standby current at 3.0V, making it optimal for ultra-low-power battery backup where voltage headroom is constrained.

Availability

R1LV0216BSB-5SI#B1 is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical patient monitor data logs, and automotive telematics event recorders requiring stable component supply across extended product lifecycles.

Supply support for R1LV0216BSB-5SI#B1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT markets.

The R1LV0216BSB-5SI#B1 belongs to Renesas' Advanced LPSRAM product line, engineered specifically for battery-operated and low-voltage memory applications demanding zero-refresh operation and extended data retention under brown-out conditions.

FAQ

What is the minimum supply voltage required to retain data in R1LV0216BSB-5SI#B1?

The R1LV0216BSB-5SI#B1 guarantees data retention down to 2.0V V_CC, provided CS# or both LB# and UB# are held at ≥ V_CC − 0.2V while CS# ≤ 0.2V. This enables reliable hold-up during battery voltage sag or power-fail transitions without external supervision circuitry. The R1LV0216BSB-5SI#B1 maintains stored data at temperatures up to +85°C with ICCDR ≤ 10 µA under these conditions.

Does R1LV0216BSB-5SI#B1 require a clock or refresh signal?

No, the R1LV0216BSB-5SI#B1 is a true static RAM with no clock input and zero refresh requirement. Its 0.15µm CMOS/TFT cell design retains data indefinitely as long as V_CC remains within specification and appropriate control signals (CS#, LB#, UB#) are asserted for standby. This eliminates timing-critical refresh overhead in resource-constrained microcontrollers. The R1LV0216BSB-5SI#B1 operates fully asynchronously using only address, data, and enable signals.

What is the function of LB# and UB# pins on R1LV0216BSB-5SI#B1?

LB# (Lower Byte Enable) and UB# (Upper Byte Enable) are active-low signals that independently gate write operations to DQ0–DQ7 and DQ8–DQ15 respectively. When LB# is low and UB# is high, only the lower byte is written; vice versa for upper byte. Both low enables full 16-bit word write. These pins allow precise byte-level memory updates without read-modify-write cycles. The R1LV0216BSB-5SI#B1 uses this scheme to minimize bus traffic in partial-register update scenarios.

Can R1LV0216BSB-5SI#B1 be used with 3.3V microcontrollers without level shifters?

Yes, the R1LV0216BSB-5SI#B1 features fully TTL-compatible inputs and outputs, with VIH = 2.2V min and VOL = 0.4V max at IOL = 2mA. It interfaces directly with standard 3.3V microcontrollers such as Renesas RL78/G13 or STMicro STM32F4 series without level translation. Input leakage is ≤1 µA and output drive strength meets TTL fan-out requirements. The R1LV0216BSB-5SI#B1 simplifies system design by eliminating external voltage translators in 3.3V-only systems.

What package type and dimensions does R1LV0216BSB-5SI#B1 use?

The R1LV0216BSB-5SI#B1 is packaged in a 44-pin plastic TSOP (II) with 400-mil body width, compliant with JEDEC MO-141BA. Pin pitch is 0.8 mm, overall dimensions are 18.4 mm × 10.16 mm × 1.2 mm (L × W × H). The package uses gull-wing leads suitable for standard reflow soldering profiles. This footprint matches industry-standard 44-pin SRAM layouts, enabling drop-in replacement in existing designs. The R1LV0216BSB-5SI#B1's TSOP (II) form factor ensures mechanical compatibility with automated assembly equipment.