Renesas R1LV0216BSB-5SI#S0
- Part No.:
- R1LV0216BSB-5SI#S0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
R1LV0216BSB-5SI#S0.pdf
- Description:
- IC SRAM 2MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:

- Shipping:

Inventory:2,836
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
R1LV0216BSB-5SI#S0 from Renesas Electronics is a 2Mb low-power static RAM organized as 131,072 × 16-bit, fabricated in 0.15µm CMOS/TFT process, operating on single 2.7–3.6V supply with 55ns access time and 1µA typical standby current at 3.0V, used in battery-backed memory subsystems for industrial controllers and portable instrumentation.
For engineers reviewing the R1LV0216BSB-5SI#S0 datasheet, R1LV0216BSB-5SI#S0 pinout, R1LV0216BSB-5SI#S0 application, or R1LV0216BSB-5SI#S0 equivalent, key selection criteria include TSOP(II)-44 package compatibility, byte-selectable 16-bit I/O architecture, no-refresh operation, TTL-compatible interface timing, and low-voltage data retention down to 2.0V.
Technical Context
This LPSRAM implements asynchronous, non-volatile-retentive SRAM architecture with independent upper/lower byte enables (UB#/LB#), chip select (CS#), write enable (WE#), and output enable (OE#) for flexible memory expansion and bus sharing. All control and data signals are TTL-compatible with VIH ≥ 2.2V and VIL ≤ 0.6V.
The device supports three write modes-word, upper-byte, and lower-byte-via CS#, WE#, LB#, and UB# combinations, and guarantees data retention at Vcc ≥ 2.0V with ICCDR ≤ 10µA at +85°C. No clocks or refresh circuitry are required, eliminating system-level timing overhead.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 2 Mbit (131,072 × 16-bit) - provides 256KB of word-addressable storage without external address multiplexing |
| Access time | 55 ns - ensures compatibility with 18 MHz bus systems using standard asynchronous read/write cycles |
| Supply voltage | 2.7–3.6 V - supports direct connection to 3.3V logic rails and battery-backed operation down to 2.0V for data retention |
| Standby current | 1 µA typical at 3.0V/25°C - enables multi-year battery life in always-on backup memory applications |
| I/O interface | TTL-compatible inputs/outputs - eliminates level-shifter requirements when interfacing with legacy microcontrollers and FPGAs |
| Package | 44-pin TSOP (II), 400-mil - industry-standard footprint compatible with automated SMT assembly and existing PCB layouts |
| Data retention Vcc | 2.0–3.6 V - maintains stored data during brown-out or battery-switchover without external power management ICs |
Pinout & Package
44-pin plastic TSOP (II) package, 400-mil body width, JEDEC MO-141AC compliant, with 0.8mm lead pitch and gull-wing leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Vcc | Power supply | Primary 2.7–3.6V supply rail; decoupling capacitor placement critical for noise immunity during high-speed reads/writes |
| Vss (GND) | Ground | Signal and power return path; two dedicated pins (pins 11 & 35) reduce ground bounce in high-frequency operation |
| A0–A16 | Address input | 17-bit address bus supporting full 131k-word decoding; A4–A0 mapped to pins 1–5 per standard TSOP layout |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus with three-state outputs; OR-tie capability allows shared bus topology without external logic |
| CS# | Chip select | Active-low enable controlling all internal buffers; assertion initiates read/write; deassertion forces high-Z outputs |
| WE# | Write enable | Active-low control for write operations; combined with CS# and LB#/UB# determines byte/word write mode |
| OE# | Output enable | Active-low gate for output drivers; prevents bus contention during multi-device sharing or CPU wait-state insertion |
| LB#, UB# | Byte enable | Independent active-low controls for lower (DQ0–7) and upper (DQ8–15) bytes; enables partial writes without read-modify-write |
| NC | Non-connected | Pins 23 and 44 are unconnected; must remain floating or tied to GND per design guidelines to avoid noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| No clock, no refresh | Eliminates system-level timing constraints and reduces firmware complexity-ideal for simple microcontroller-based data loggers |
| 1 µA standby current (typ.) | Enables >5-year battery backup with standard CR2032 cells in low-duty-cycle monitoring applications |
| Byte-selectable 16-bit I/O | Supports 8-bit or 16-bit host buses via LB#/UB#; avoids glue logic and simplifies migration from legacy 8-bit SRAMs |
| 2.0V data retention | Maintains memory contents during power failover or deep sleep without external hold-up capacitors or supervisory circuits |
| TTL-compatible signaling | Direct interface with 3.3V/5V microcontrollers, CPLDs, and ASICs-no level translation required in mixed-voltage systems |
Applications
| Industrial Data Logger | Medical Patient Monitor |
|---|---|
Use Scenario: Continuous acquisition of sensor data (ECG, SpO₂, temperature) with periodic flash offload and real-time display buffering. IC Role / Device Role / Timing Role: Primary volatile buffer memory holding 2–4 seconds of raw waveform data prior to compression and storage. Use Value: 55ns access time enables real-time sampling at ≥10 kSPS; 1µA standby current extends battery runtime between charges. |
Use Scenario: Temporary storage of alarm-triggered waveform snapshots and configuration parameters during AC power loss. IC Role / Device Role / Timing Role: Battery-backed SRAM preserving critical state and event history across power cycles. Use Value: 2.0V data retention threshold ensures reliable hold-up using small supercapacitors; TSOP package fits compact front-panel PCBs. |
| Programmable Logic Controller (PLC) | Smart Energy Meter |
Use Scenario: Storing I/O mapping tables, ladder logic variables, and diagnostic counters in DIN-rail mounted controllers. IC Role / Device Role / Timing Role: Non-refreshing working memory for deterministic scan-cycle execution without DRAM controller overhead. Use Value: Asynchronous interface simplifies FPGA-based memory controller design; byte-enable support reduces bus arbitration latency. |
Use Scenario: Holding tariff schedules, tamper logs, and real-time energy accumulation registers during meter firmware updates. IC Role / Device Role / Timing Role: Secure, low-power scratchpad memory retaining billing-critical data during brownouts and firmware reboots. Use Value: 2.7–3.6V operation matches isolated DC-DC output; 44-pin TSOP footprint aligns with legacy meter reference designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62128EV30LL-45ZSXIT | 45ns access time, 2.2–5.5V supply range, 48-pin TSOP-I package | Wider voltage range supports 5V legacy systems; larger package requires PCB redesign | Select when 5V tolerance or faster access is required and board space permits 48-pin layout |
| IS61LV25616AL-10TLI | 10ns access time, 3.0–3.6V supply, 44-pin TSOP-II, higher ICC1 (30mA max) | Higher speed but increased active power; identical pinout and voltage range | Select when system timing budget demands sub-10ns read latency and thermal management accommodates higher dissipation |
Compared with CY62128EV30LL-45ZSXIT and IS61LV25616AL-10TLI, the R1LV0216BSB-5SI#S0 offers optimal balance of ultra-low standby current (1µA), 55ns timing, and strict 2.7–3.6V compliance-making it preferred for battery-constrained, cost-sensitive industrial and medical edge devices where pinout compatibility and long-term supply stability are critical.
Availability
R1LV0216BSB-5SI#S0 is available at Aetrix Electronics and suitable for industrial data loggers, medical patient monitors, programmable logic controllers, smart energy meters, and battery-backed instrumentation requiring stable component supply across extended product lifecycles.
Supply support for R1LV0216BSB-5SI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.
The R1LV0216BSB-5SI#S0 belongs to Renesas' Advanced LPSRAM product line, designed specifically for ultra-low-power, battery-operated, and data-retentive memory applications in harsh or space-constrained environments.
FAQ
What is the maximum operating temperature range for the R1LV0216BSB-5SI#S0?
The R1LV0216BSB-5SI#S0 is rated for operation from –40°C to +85°C ambient temperature. This industrial-grade temperature range ensures reliable performance in factory automation equipment, outdoor metering devices, and medical diagnostics hardware where environmental extremes are common. The device's standby current specification (≤10µA at +85°C) confirms thermal stability under worst-case conditions.
Does the R1LV0216BSB-5SI#S0 require external refresh circuitry?
No, the R1LV0216BSB-5SI#S0 is a true static RAM and does not require any refresh cycles or external clock signals. Its architecture uses flip-flop-based memory cells, enabling indefinite data retention as long as power is applied and control signals meet timing specifications. This eliminates refresh overhead in microcontroller firmware and simplifies system design compared to DRAM solutions.
Can the R1LV0216BSB-5SI#S0 be used with a 5V microcontroller interface?
No-the R1LV0216BSB-5SI#S0 is strictly a 2.7–3.6V device with TTL-compatible input thresholds (VIH ≥ 2.2V, VIL ≤ 0.6V). Direct connection to 5V logic violates absolute maximum ratings and risks permanent damage. A level-shifting buffer or voltage translator is required for interoperability with 5V hosts, unlike wider-supply alternatives such as the CY62128EV30LL-45ZSXIT.
What is the significance of the "-5SI#S0" suffix in R1LV0216BSB-5SI#S0?
The "-5SI#S0" suffix denotes a specific ordering variant of the R1LV0216BSB family: "5" indicates 55ns access time, "S" specifies industrial temperature grade (–40°C to +85°C), "I" identifies the 44-pin TSOP(II) package, and "#S0" refers to embossed tape packaging format per Renesas' ordering nomenclature. This exact variant is optimized for automated SMT assembly in high-reliability applications.
How does the R1LV0216BSB-5SI#S0 support byte-level writes without read-modify-write?
The R1LV0216BSB-5SI#S0 implements dedicated LB# (pins 32–33) and UB# (pin 31) controls that independently gate the lower and upper data bytes during write cycles. When only LB# is asserted low with WE# and CS#, only DQ0–DQ7 are written; similarly, asserting only UB# writes DQ8–DQ15. This eliminates the need for external latches or firmware-level masking, reducing bus turnaround time and CPU load.
R1LV0216BSB-5SI#S0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 2Mbit
- Memory Organization:
- 128K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
R1LV0216BSB-5SI#S0 FAQ
1.How can I place an order for R1LV0216BSB-5SI#S0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0216BSB-5SI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0216BSB-5SI#S0 reliable?
The price and inventory of R1LV0216BSB-5SI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0216BSB-5SI#S0 is usually 5 days.
3.What payment methods are accepted for R1LV0216BSB-5SI#S0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0216BSB-5SI#S0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0216BSB-5SI#S0?
R1LV0216BSB-5SI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0216BSB-5SI#S0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0216BSB-5SI#S0?
For technical support, including R1LV0216BSB-5SI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0216BSB-5SI#S0 requirements.
6.How does Aetrix verify that R1LV0216BSB-5SI#S0 is sourced from the original manufacturer or authorized distributors?
All R1LV0216BSB-5SI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0216BSB-5SI#S0 meets industry standards.
7.What is the process for return or replacement of R1LV0216BSB-5SI#S0?
All R1LV0216BSB-5SI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0216BSB-5SI#S0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0216BSB-5SI#S0 part is unused and in its original packaging.
Return procedure for R1LV0216BSB-5SI#S0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV0216BSB-5SI#S0 Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

