Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas R1LV0216BSB-5SI#S0

Part No.:
R1LV0216BSB-5SI#S0
Manufacturer:
Renesas
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixR1LV0216BSB-5SI#S0.pdf
Description:
IC SRAM 2MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,836

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

R1LV0216BSB-5SI#S0 from Renesas Electronics is a 2Mb low-power static RAM organized as 131,072 × 16-bit, fabricated in 0.15µm CMOS/TFT process, operating on single 2.7–3.6V supply with 55ns access time and 1µA typical standby current at 3.0V, used in battery-backed memory subsystems for industrial controllers and portable instrumentation.

For engineers reviewing the R1LV0216BSB-5SI#S0 datasheet, R1LV0216BSB-5SI#S0 pinout, R1LV0216BSB-5SI#S0 application, or R1LV0216BSB-5SI#S0 equivalent, key selection criteria include TSOP(II)-44 package compatibility, byte-selectable 16-bit I/O architecture, no-refresh operation, TTL-compatible interface timing, and low-voltage data retention down to 2.0V.

Technical Context

This LPSRAM implements asynchronous, non-volatile-retentive SRAM architecture with independent upper/lower byte enables (UB#/LB#), chip select (CS#), write enable (WE#), and output enable (OE#) for flexible memory expansion and bus sharing. All control and data signals are TTL-compatible with VIH ≥ 2.2V and VIL ≤ 0.6V.

The device supports three write modes-word, upper-byte, and lower-byte-via CS#, WE#, LB#, and UB# combinations, and guarantees data retention at Vcc ≥ 2.0V with ICCDR ≤ 10µA at +85°C. No clocks or refresh circuitry are required, eliminating system-level timing overhead.

Key Specifications

Parameter Value and Actual Design Meaning
Memory size2 Mbit (131,072 × 16-bit) - provides 256KB of word-addressable storage without external address multiplexing
Access time55 ns - ensures compatibility with 18 MHz bus systems using standard asynchronous read/write cycles
Supply voltage2.7–3.6 V - supports direct connection to 3.3V logic rails and battery-backed operation down to 2.0V for data retention
Standby current1 µA typical at 3.0V/25°C - enables multi-year battery life in always-on backup memory applications
I/O interfaceTTL-compatible inputs/outputs - eliminates level-shifter requirements when interfacing with legacy microcontrollers and FPGAs
Package44-pin TSOP (II), 400-mil - industry-standard footprint compatible with automated SMT assembly and existing PCB layouts
Data retention Vcc2.0–3.6 V - maintains stored data during brown-out or battery-switchover without external power management ICs

Pinout & Package

44-pin plastic TSOP (II) package, 400-mil body width, JEDEC MO-141AC compliant, with 0.8mm lead pitch and gull-wing leads.

Pin/Terminal Circuit Role Design Meaning
VccPower supplyPrimary 2.7–3.6V supply rail; decoupling capacitor placement critical for noise immunity during high-speed reads/writes
Vss (GND)GroundSignal and power return path; two dedicated pins (pins 11 & 35) reduce ground bounce in high-frequency operation
A0–A16Address input17-bit address bus supporting full 131k-word decoding; A4–A0 mapped to pins 1–5 per standard TSOP layout
DQ0–DQ15Data I/O16-bit bidirectional data bus with three-state outputs; OR-tie capability allows shared bus topology without external logic
CS#Chip selectActive-low enable controlling all internal buffers; assertion initiates read/write; deassertion forces high-Z outputs
WE#Write enableActive-low control for write operations; combined with CS# and LB#/UB# determines byte/word write mode
OE#Output enableActive-low gate for output drivers; prevents bus contention during multi-device sharing or CPU wait-state insertion
LB#, UB#Byte enableIndependent active-low controls for lower (DQ0–7) and upper (DQ8–15) bytes; enables partial writes without read-modify-write
NCNon-connectedPins 23 and 44 are unconnected; must remain floating or tied to GND per design guidelines to avoid noise coupling

Key Features

Feature Design Value
No clock, no refreshEliminates system-level timing constraints and reduces firmware complexity-ideal for simple microcontroller-based data loggers
1 µA standby current (typ.)Enables >5-year battery backup with standard CR2032 cells in low-duty-cycle monitoring applications
Byte-selectable 16-bit I/OSupports 8-bit or 16-bit host buses via LB#/UB#; avoids glue logic and simplifies migration from legacy 8-bit SRAMs
2.0V data retentionMaintains memory contents during power failover or deep sleep without external hold-up capacitors or supervisory circuits
TTL-compatible signalingDirect interface with 3.3V/5V microcontrollers, CPLDs, and ASICs-no level translation required in mixed-voltage systems

Applications

Industrial Data Logger Medical Patient Monitor

Use Scenario: Continuous acquisition of sensor data (ECG, SpO₂, temperature) with periodic flash offload and real-time display buffering.

IC Role / Device Role / Timing Role: Primary volatile buffer memory holding 2–4 seconds of raw waveform data prior to compression and storage.

Use Value: 55ns access time enables real-time sampling at ≥10 kSPS; 1µA standby current extends battery runtime between charges.

Use Scenario: Temporary storage of alarm-triggered waveform snapshots and configuration parameters during AC power loss.

IC Role / Device Role / Timing Role: Battery-backed SRAM preserving critical state and event history across power cycles.

Use Value: 2.0V data retention threshold ensures reliable hold-up using small supercapacitors; TSOP package fits compact front-panel PCBs.

Programmable Logic Controller (PLC) Smart Energy Meter

Use Scenario: Storing I/O mapping tables, ladder logic variables, and diagnostic counters in DIN-rail mounted controllers.

IC Role / Device Role / Timing Role: Non-refreshing working memory for deterministic scan-cycle execution without DRAM controller overhead.

Use Value: Asynchronous interface simplifies FPGA-based memory controller design; byte-enable support reduces bus arbitration latency.

Use Scenario: Holding tariff schedules, tamper logs, and real-time energy accumulation registers during meter firmware updates.

IC Role / Device Role / Timing Role: Secure, low-power scratchpad memory retaining billing-critical data during brownouts and firmware reboots.

Use Value: 2.7–3.6V operation matches isolated DC-DC output; 44-pin TSOP footprint aligns with legacy meter reference designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power asynchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY62128EV30LL-45ZSXIT45ns access time, 2.2–5.5V supply range, 48-pin TSOP-I packageWider voltage range supports 5V legacy systems; larger package requires PCB redesignSelect when 5V tolerance or faster access is required and board space permits 48-pin layout
IS61LV25616AL-10TLI10ns access time, 3.0–3.6V supply, 44-pin TSOP-II, higher ICC1 (30mA max)Higher speed but increased active power; identical pinout and voltage rangeSelect when system timing budget demands sub-10ns read latency and thermal management accommodates higher dissipation

Compared with CY62128EV30LL-45ZSXIT and IS61LV25616AL-10TLI, the R1LV0216BSB-5SI#S0 offers optimal balance of ultra-low standby current (1µA), 55ns timing, and strict 2.7–3.6V compliance-making it preferred for battery-constrained, cost-sensitive industrial and medical edge devices where pinout compatibility and long-term supply stability are critical.

Availability

R1LV0216BSB-5SI#S0 is available at Aetrix Electronics and suitable for industrial data loggers, medical patient monitors, programmable logic controllers, smart energy meters, and battery-backed instrumentation requiring stable component supply across extended product lifecycles.

Supply support for R1LV0216BSB-5SI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.

The R1LV0216BSB-5SI#S0 belongs to Renesas' Advanced LPSRAM product line, designed specifically for ultra-low-power, battery-operated, and data-retentive memory applications in harsh or space-constrained environments.

FAQ

What is the maximum operating temperature range for the R1LV0216BSB-5SI#S0?

The R1LV0216BSB-5SI#S0 is rated for operation from –40°C to +85°C ambient temperature. This industrial-grade temperature range ensures reliable performance in factory automation equipment, outdoor metering devices, and medical diagnostics hardware where environmental extremes are common. The device's standby current specification (≤10µA at +85°C) confirms thermal stability under worst-case conditions.

Does the R1LV0216BSB-5SI#S0 require external refresh circuitry?

No, the R1LV0216BSB-5SI#S0 is a true static RAM and does not require any refresh cycles or external clock signals. Its architecture uses flip-flop-based memory cells, enabling indefinite data retention as long as power is applied and control signals meet timing specifications. This eliminates refresh overhead in microcontroller firmware and simplifies system design compared to DRAM solutions.

Can the R1LV0216BSB-5SI#S0 be used with a 5V microcontroller interface?

No-the R1LV0216BSB-5SI#S0 is strictly a 2.7–3.6V device with TTL-compatible input thresholds (VIH ≥ 2.2V, VIL ≤ 0.6V). Direct connection to 5V logic violates absolute maximum ratings and risks permanent damage. A level-shifting buffer or voltage translator is required for interoperability with 5V hosts, unlike wider-supply alternatives such as the CY62128EV30LL-45ZSXIT.

What is the significance of the "-5SI#S0" suffix in R1LV0216BSB-5SI#S0?

The "-5SI#S0" suffix denotes a specific ordering variant of the R1LV0216BSB family: "5" indicates 55ns access time, "S" specifies industrial temperature grade (–40°C to +85°C), "I" identifies the 44-pin TSOP(II) package, and "#S0" refers to embossed tape packaging format per Renesas' ordering nomenclature. This exact variant is optimized for automated SMT assembly in high-reliability applications.

How does the R1LV0216BSB-5SI#S0 support byte-level writes without read-modify-write?

The R1LV0216BSB-5SI#S0 implements dedicated LB# (pins 32–33) and UB# (pin 31) controls that independently gate the lower and upper data bytes during write cycles. When only LB# is asserted low with WE# and CS#, only DQ0–DQ7 are written; similarly, asserting only UB# writes DQ8–DQ15. This eliminates the need for external latches or firmware-level masking, reducing bus turnaround time and CPU load.

R1LV0216BSB-5SI#S0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM
Memory Size:
2Mbit
Memory Organization:
128K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

R1LV0216BSB-5SI#S0 FAQ

1.How can I place an order for R1LV0216BSB-5SI#S0 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1LV0216BSB-5SI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1LV0216BSB-5SI#S0 reliable?

The price and inventory of R1LV0216BSB-5SI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0216BSB-5SI#S0 is usually 5 days.

3.What payment methods are accepted for R1LV0216BSB-5SI#S0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0216BSB-5SI#S0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1LV0216BSB-5SI#S0?

R1LV0216BSB-5SI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1LV0216BSB-5SI#S0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LV0216BSB-5SI#S0?

For technical support, including R1LV0216BSB-5SI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0216BSB-5SI#S0 requirements.

6.How does Aetrix verify that R1LV0216BSB-5SI#S0 is sourced from the original manufacturer or authorized distributors?

All R1LV0216BSB-5SI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0216BSB-5SI#S0 meets industry standards.

7.What is the process for return or replacement of R1LV0216BSB-5SI#S0?

All R1LV0216BSB-5SI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0216BSB-5SI#S0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LV0216BSB-5SI#S0 part is unused and in its original packaging.

Return procedure for R1LV0216BSB-5SI#S0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

R1LV0216BSB-5SI#S0 Tags

  • R1LV0216BSB-5SI#S0
  • R1LV0216BSB-5SI#S0 PDF
  • R1LV0216BSB-5SI#S0 Datasheet
  • R1LV0216BSB-5SI#S0 Specifications
  • R1LV0216BSB-5SI#S0 Images
  • Renesas
  • Renesas R1LV0216BSB-5SI#S0
  • Buy R1LV0216BSB-5SI#S0
  • R1LV0216BSB-5SI#S0 Price
  • R1LV0216BSB-5SI#S0 Distributor
  • R1LV0216BSB-5SI#S0 Supplier
  • R1LV0216BSB-5SI#S0 Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER