My Inquiry
My Account
Renesas R1LV0216BSB-5SI#S1
- Part No.:
- R1LV0216BSB-5SI#S1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
R1LV0216BSB-5SI#S1.pdf
- Description:
- IC SRAM 2MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:2,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
R1LV0216BSB-5SI#S1 from Renesas Electronics is a 2Mb low-power static RAM organized as 131,072 × 16-bit, fabricated in 0.15µm CMOS/TFT technology, operating from 2.7V to 3.6V with 55 ns access time and 1 µA typical standby current at 3.0V, used in battery-backed memory systems requiring no refresh and TTL-compatible interfacing.
For engineers reviewing the R1LV0216BSB-5SI#S1 datasheet, R1LV0216BSB-5SI#S1 pinout, R1LV0216BSB-5SI#S1 application, or R1LV0216BSB-5SI#S1 equivalent, key selection criteria include single-supply operation, byte-selectable write capability via LB#/UB#, three-state I/O with OR-tie support, and TSOP (II) packaging for space-constrained embedded designs.
Technical Context
The R1LV0216BSB-5SI#S1 implements a fully asynchronous SRAM architecture with independent upper/lower byte enables (UB#/LB#), chip select (CS#), output enable (OE#), and write enable (WE#), supporting word, upper-byte, and lower-byte write operations without clocks or refresh cycles. Its address buffer, sense/write amplifier, and column/row decoder are all powered directly from Vcc.
It features dual data retention modes triggered either by CS# ≥ Vcc−0.2V or LB#/UB# ≥ Vcc−0.2V while CS# ≤ 0.2V, enabling ultra-low ICCDR of 1 µA at +25°C during backup operation at Vcc as low as 2.0V - critical for long-term battery hold applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 2 Mb (131,072 × 16-bit) - supports 16-bit data bus systems without external width expansion. |
| Access time | 55 ns - ensures compatibility with legacy 16-bit microcontrollers and DSPs running at ≤18 MHz. |
| Supply voltage | 2.7V–3.6V - matches Li-ion battery discharge profile and eliminates need for voltage regulation in portable devices. |
| Standby current | 1 µA typical at 3.0V - enables multi-year data retention on coin-cell batteries in backup mode. |
| Operating temperature | −40°C to +85°C - qualified for industrial and automotive under-hood environments. |
| I/O interface | TTL-compatible inputs/outputs - simplifies direct connection to 3.3V logic families without level shifters. |
| Data retention Vcc min | 2.0V - guarantees nonvolatile data hold even during brown-out conditions below nominal supply. |
Pinout & Package
Package: 44-pin 400-mil plastic TSOP (II), surface-mount, JEDEC standard footprint with 0.8 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Vcc | Power supply | Single 2.7–3.6V supply input; powers all internal logic and memory array. |
| Vss (GND) | Ground reference | Dual ground pins (pins 11 and 35) reduce noise coupling and improve signal integrity. |
| A0–A16 | Address inputs | 17-bit address bus selects one of 131,072 16-bit words; A4–A0 mapped to pins 1–5 per TSOP layout. |
| DQ0–DQ15 | Data I/O | Bidirectional 16-bit data bus with three-state outputs; supports OR-tie for shared-bus configurations. |
| CS# | Chip select | Active-low global enable; places device in standby when high, enabling system-level power gating. |
| WE# | Write enable | Active-low control for write cycles; combined with LB#/UB# to select byte/word write granularity. |
| OE# | Output enable | Active-low control for read data output; prevents bus contention when multiple devices share DQ lines. |
| LB#, UB# | Byte enables | Independent active-low controls for lower (DQ0–7) and upper (DQ8–15) byte writes - eliminates need for external byte masking logic. |
| NC | No connect | Pins 23 and 44 are unconnected; must remain floating or grounded per PCB design rules. |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Asynchronous SRAM architecture eliminates DRAM-style refresh circuitry, reducing MCU firmware overhead and system complexity. |
| Byte-selectable write | LB# and UB# enable independent 8-bit writes without disturbing adjacent bytes - essential for efficient protocol stack buffer management. |
| Ultra-low standby current | 1 µA typical at 3.0V allows >10-year data retention on CR2032 coin cells in backup mode - validated across −40°C to +85°C. |
| TTL-compatible I/O | VIH = 2.2V min, VIL = 0.6V max ensures reliable interfacing with legacy 3.3V microcontrollers and FPGAs without level translation. |
| OR-tie capable outputs | Three-state DQ drivers support wired-OR bus topologies - simplifies multi-device memory expansion without external bus transceivers. |
Applications
| Industrial PLC Data Logging | Medical Device Parameter Storage |
|---|---|
Use Scenario: Storing calibration coefficients and event logs in programmable logic controllers deployed in factory automation environments with wide temperature swings. IC Role / Device Role / Timing Role: Nonvolatile backup memory holding critical configuration data during main power loss, accessed asynchronously by ARM Cortex-M7 controller. Use Value: 1 µA standby current extends battery life beyond 10 years; 55 ns access meets real-time scan cycle timing budgets. |
Use Scenario: Retaining patient-specific therapy parameters and usage history in portable infusion pumps powered by rechargeable Li-ion batteries. IC Role / Device Role / Timing Role: Battery-backed SRAM preserving mission-critical settings during charging interruptions or emergency shutdowns. Use Value: 2.0V data retention threshold ensures data integrity down to end-of-battery discharge; TSOP package fits compact handheld form factor. |
| Automotive Infotainment Cache | Smart Meter Firmware Buffer |
Use Scenario: Caching UI assets and navigation map tiles in head-unit systems where fast random access and low quiescent power are mandatory. IC Role / Device Role / Timing Role: High-speed, low-latency memory buffer between SoC and display subsystem, operating in extended temperature range. Use Value: 55 ns tAA and TTL compatibility eliminate glue logic; −40°C to +85°C rating satisfies AEC-Q100 Grade 3 requirements. |
Use Scenario: Holding firmware update payloads and cryptographic keys in utility smart meters exposed to outdoor ambient conditions. IC Role / Device Role / Timing Role: Secure, tamper-resistant storage element interfaced to secure MCU via parallel bus with byte-write granularity. Use Value: LB#/UB# enables atomic 8-bit key updates without full-word overwrite; 1 µA ISB1 minimizes self-discharge during 15-year field deployment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62128ELL-55ZSXIT (Infineon) | Same 128k×16 organization, 55 ns access, but 2.2–5.5V supply range and higher 2 µA standby current at 3.0V. | Lacks dedicated LB#/UB# pins - requires external byte-enable logic for partial writes. | Choose when wider voltage tolerance is needed and byte-select logic is already present on board. |
| IS61LV25616AL-10TLI (ISSI) | 256k×16 density (512 kb), 10 ns faster access (45 ns), but 5 µA typical standby current and no data retention spec below 2.7V. | Higher speed suits real-time control loops; higher ISB limits battery backup duration. | Choose when system clock rate exceeds 22 MHz and battery lifetime is secondary to throughput. |
Compared with CY62128ELL-55ZSXIT and IS61LV25616AL-10TLI, the R1LV0216BSB-5SI#S1 delivers superior battery-backed longevity due to its 1 µA standby and 2.0V data retention, while maintaining pin-compatible TSOP (II) footprint and native byte-write control - making it optimal for long-life, low-power embedded memory.
Availability
R1LV0216BSB-5SI#S1 is available at Aetrix Electronics and suitable for industrial PLC data logging, medical device parameter storage, automotive infotainment cache, and smart meter firmware buffering requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for R1LV0216BSB-5SI#S1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV0216BSB-5SI#S1 belongs to Renesas' LPSRAM family, designed specifically for ultra-low-power, battery-backed memory applications where zero-refresh operation, wide temperature tolerance, and minimal standby current are critical system requirements.
FAQ
What is the minimum supply voltage required to retain data in R1LV0216BSB-5SI#S1?
The R1LV0216BSB-5SI#S1 guarantees data retention down to 2.0V when placed in retention mode via CS# ≥ Vcc−0.2V or LB#/UB# ≥ Vcc−0.2V with CS# ≤ 0.2V. This specification is tested and documented in the Low Vcc Data Retention Characteristics table on page 12 of the R10DS0273EJ0101 datasheet. Below 2.0V, data integrity is not assured.
Does R1LV0216BSB-5SI#S1 require an external clock or refresh signal?
No, the R1LV0216BSB-5SI#S1 is a fully asynchronous static RAM and does not require any clock or refresh signal. All operations - read, write, and standby - are controlled solely by the timing relationships among CS#, WE#, OE#, LB#, and UB# as defined in the Operation Table on page 4 of the datasheet. This eliminates refresh overhead in MCU firmware.
What is the meaning of "#S1" in R1LV0216BSB-5SI#S1?
The "#S1" suffix in R1LV0216BSB-5SI#S1 indicates embossed tape packaging (as opposed to "#B1" for tray packaging), per the Ordering Information table on page 1 of the R10DS0273EJ0101 datasheet. It denotes the same electrical and thermal specifications as R1LV0216BSB-5SI#B1, differing only in shipping format for automated SMT assembly.
Can R1LV0216BSB-5SI#S1 be used in a 3.3V-only system without level shifters?
Yes, the R1LV0216BSB-5SI#S1 has TTL-compatible inputs (VIH = 2.2V min, VIL = 0.6V max) and outputs (VOH = 2.4V min at –0.5mA), making it fully interoperable with standard 3.3V logic families such as 74LVC and ARM GPIOs. No level-shifting circuitry is required for direct connection.
How does the byte-enable functionality work in R1LV0216BSB-5SI#S1?
In the R1LV0216BSB-5SI#S1, LB# enables writes to DQ0–DQ7 (lower byte) and UB# enables writes to DQ8–DQ15 (upper byte). When both are low, a full 16-bit word write occurs. The Operation Table (page 4) confirms that simultaneous assertion of LB# and UB# with WE# low performs word write, while individual activation supports byte-granularity updates without affecting adjacent data.
R1LV0216BSB-5SI#S1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 2Mbit
- Memory Organization:
- 128K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
R1LV0216BSB-5SI#S1 FAQ
1.How can I place an order for R1LV0216BSB-5SI#S1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0216BSB-5SI#S1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0216BSB-5SI#S1 reliable?
The price and inventory of R1LV0216BSB-5SI#S1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0216BSB-5SI#S1 is usually 5 days.
3.What payment methods are accepted for R1LV0216BSB-5SI#S1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0216BSB-5SI#S1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0216BSB-5SI#S1?
R1LV0216BSB-5SI#S1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0216BSB-5SI#S1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0216BSB-5SI#S1?
For technical support, including R1LV0216BSB-5SI#S1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0216BSB-5SI#S1 requirements.
6.How does Aetrix verify that R1LV0216BSB-5SI#S1 is sourced from the original manufacturer or authorized distributors?
All R1LV0216BSB-5SI#S1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0216BSB-5SI#S1 meets industry standards.
7.What is the process for return or replacement of R1LV0216BSB-5SI#S1?
All R1LV0216BSB-5SI#S1 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0216BSB-5SI#S1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0216BSB-5SI#S1 part is unused and in its original packaging.
Return procedure for R1LV0216BSB-5SI#S1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV0216BSB-5SI#S1 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
