My Inquiry
My Account
Renesas R1LV0216BSB-7SI#B0
- Part No.:
- R1LV0216BSB-7SI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
R1LV0216BSB-7SI#B0.pdf
- Description:
- IC SRAM 2MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:3,452
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
R1LV0216BSB-7SI#B0 from Renesas Electronics is a 2Mb low-power static RAM organized as 131,072 × 16-bit, operating from a single 2.7–3.6V supply, with 70 ns access time and -40°C to +85°C industrial temperature range, packaged in 44-pin TSOP (II). It delivers ultra-low standby current (1 µA typical at 3.0V), requires no refresh or clocks, and supports byte-selectable writes for embedded memory expansion in battery-backed systems.
For engineers reviewing the R1LV0216BSB-7SI#B0 datasheet, R1LV0216BSB-7SI#B0 pinout, R1LV0216BSB-7SI#B0 application, or R1LV0216BSB-7SI#B0 equivalent, this page provides verified technical context, pin-level I/O roles, TTL-compatible interface behavior, byte-enable timing constraints, and validated alternatives for industrial SRAM replacement scenarios.
Technical Context
The R1LV0216BSB-7SI#B0 implements a fully asynchronous static RAM architecture with independent upper- and lower-byte enables (UB#, LB#), enabling partial-word writes without external logic. Its address buffer, data I/O buffers, and control input buffers are all TTL-compatible and powered by a single Vcc rail.
Operation relies on three active-low control signals-CS#, WE#, and OE#-with defined timing windows for read/write cycles, output enable/disable transitions, and chip deselect-to-high-Z delays. Data retention is guaranteed down to 2.0V with ≤10 µA current draw at +85°C, supporting robust battery backup functionality.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 2 Mbit (131,072 × 16-bit) - supports 16-bit data bus interfacing without glue logic |
| Access Time | 70 ns - defines maximum clock rate for synchronous controllers interfacing via wait-state logic |
| Supply Voltage | 2.7–3.6 V - compatible with 3.3V system rails and brown-out tolerant down to 2.0V for data retention |
| Standby Current | 1 µA typical at 3.0V/25°C - enables multi-year battery operation in always-on backup mode |
| Operating Temp | -40°C to +85°C - qualified for industrial-grade embedded control and automotive body electronics |
| I/O Interface | TTL-compatible inputs/outputs - eliminates level-shifter requirements when interfacing with legacy microcontrollers |
| Package | 44-pin TSOP (II), 400-mil - surface-mount compatible with standard reflow profiles and board space-constrained designs |
Pinout & Package
44-pin plastic TSOP (II), normal-bend type (package code PTSB0044GD-B), 400-mil width, JEDEC-standard footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Vcc | Power supply | Single 2.7–3.6V supply rail; decoupling required within 10 mm of pin |
| Vss | Ground | Primary reference for all I/O and internal logic; must be low-impedance connection |
| A0–A16 | Address inputs | 17-bit address bus supporting full 131k-word addressing; latched on CS# assertion |
| DQ0–DQ15 | Data I/O | Bidirectional 16-bit data bus; three-state controlled by CS#, OE#, and byte enables |
| CS# | Chip select | Active-low global enable; places device in standby when high, enables access when low |
| WE# | Write enable | Active-low write strobe; initiates write cycle when low with valid CS# and LB#/UB# |
| OE# | Output enable | Active-low output gate; prevents bus contention during shared-memory multiplexing |
| LB#, UB# | Byte enables | Independent active-low controls for lower (DQ0–7) and upper (DQ8–15) byte writes |
| NC | No connection | Two pins (pins 23 and 44) are unconnected; must remain floating or grounded per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates DRAM controller overhead and timing-critical refresh circuitry in MCU-based systems |
| 1 µA standby current | Enables >10-year battery life in non-volatile memory retention applications using coin-cell sources |
| Byte-selectable write | Reduces bus traffic and power consumption by allowing 8-bit updates without disturbing adjacent bytes |
| TTL-compatible I/O | Direct interface with legacy 5V-tolerant microcontrollers and FPGAs without level translation |
| Common data I/O | Simplifies PCB routing and reduces pin count versus separate input/output bus architectures |
Applications
| Industrial PLC Memory Buffer | Medical Device Data Logger |
|---|---|
Use Scenario: Real-time acquisition of sensor readings in programmable logic controllers with periodic flash backup. IC Role / Device Role / Timing Role: Primary working memory for instruction execution and I/O image storage; accessed asynchronously during scan cycles. Use Value: 70 ns access time ensures deterministic response within 100 µs scan intervals; low standby current preserves data during mains failure. |
Use Scenario: Continuous ECG waveform buffering in portable diagnostic equipment with battery fallback. IC Role / Device Role / Timing Role: High-reliability temporary storage for raw analog samples prior to compression and wireless transmission. Use Value: -40°C to +85°C rating supports clinical use across ambient conditions; 2.0V data retention enables seamless transition to backup power. |
| Automotive Body Control Module | Point-of-Sale Terminal EEPROM Cache |
Use Scenario: Storing configuration parameters and fault codes in door module ECUs with infrequent write cycles. IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding calibration data and runtime counters; updated only on ignition-off events. Use Value: Byte-write capability minimizes wear on downstream flash; TSOP package withstands automotive thermal cycling per AEC-Q200. |
Use Scenario: Accelerating transaction logging in retail terminals where EEPROM endurance limits frequent writes. IC Role / Device Role / Timing Role: Write-through cache between processor and serial EEPROM, absorbing burst writes before committing to flash. Use Value: No-refresh operation avoids latency spikes during high-throughput receipt printing; TTL compatibility matches legacy 8051-based controllers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-70TQLI | 70 ns access, same 256K×16 organization, but 3.3V-only (3.135–3.465V); higher ISB (5 µA typical) | Requires tighter Vcc regulation; less suitable for wide-input battery systems | Preferred where strict 3.3V rail stability exists and board layout favors TQFP over TSOP |
| AS6C4008-70PCN | 70 ns access, 256K×16, 2.7–3.6V supply, but 55°C max operating temp (commercial grade) | Not rated for industrial temperature range; unsuitable for under-hood or factory-floor deployment | Valid cost-optimized option for consumer-grade devices with ambient-controlled environments |
Compared with R1LV0216BSB-7SI#B0, the IS61LV25616AL-70TQLI offers better packaging flexibility but narrower voltage tolerance, while the AS6C4008-70PCN sacrifices industrial temperature qualification for lower unit cost-making R1LV0216BSB-7SI#B0 the optimal choice for ruggedized, battery-backed embedded memory requiring guaranteed -40°C operation and sub-µA retention.
Availability
R1LV0216BSB-7SI#B0 is available at Aetrix Electronics and suitable for industrial automation, medical data logging, automotive body electronics, and point-of-sale terminal design requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for R1LV0216BSB-7SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV0216BSB series was designed as an advanced LPSRAM family targeting low-voltage, low-power, and high-reliability memory applications in battery-operated and safety-critical embedded systems.
FAQ
What is the minimum supply voltage required to retain data in R1LV0216BSB-7SI#B0?
The R1LV0216BSB-7SI#B0 guarantees data retention down to 2.0V, as specified in its Low Vcc Data Retention Characteristics table. At this voltage, the device draws ≤10 µA at +85°C while maintaining stored contents-enabling reliable operation during brown-out or battery depletion events. This specification applies only when CS# or LB#/UB# are held in the appropriate high-impedance control state per the retention waveform diagram.
Does R1LV0216BSB-7SI#B0 require external refresh circuitry?
No, the R1LV0216BSB-7SI#B0 is a true static RAM and requires no refresh cycles. Its CMOS latch-based memory cells retain data indefinitely as long as power is applied and control signals meet setup/hold timing. This eliminates refresh overhead in microcontroller firmware and simplifies system-level timing design compared to DRAM or pseudo-SRAM solutions.
Can R1LV0216BSB-7SI#B0 interface directly with a 5V microcontroller?
Yes, the R1LV0216BSB-7SI#B0 features TTL-compatible inputs (VIH = 2.2V min, VIL = 0.6V max) and outputs (VOH ≥ 2.4V at -0.5mA), allowing direct connection to 5V-tolerant GPIOs of legacy MCUs such as the 8051 or PIC18F series. However, Vcc must remain within 2.7–3.6V; level shifters are unnecessary for signal integrity but not for supply voltage translation.
What is the significance of LB# and UB# pins on R1LV0216BSB-7SI#B0?
The LB# (Lower Byte Enable) and UB# (Upper Byte Enable) pins allow independent 8-bit write operations to DQ0–DQ7 or DQ8–DQ15 without affecting the other byte. This enables efficient partial-word updates-critical for reducing bus traffic, minimizing power consumption, and avoiding read-modify-write sequences in systems with mixed 8-bit and 16-bit peripherals.
Is R1LV0216BSB-7SI#B0 RoHS compliant and lead-free?
Yes, the R1LV0216BSB-7SI#B0 is RoHS compliant and lead-free, as confirmed by Renesas Electronics' environmental compliance documentation and material declarations. The TSOP (II) package uses matte tin terminations and meets EU Directive 2011/65/EU requirements, supporting environmentally conscious manufacturing and end-of-life recycling protocols.
R1LV0216BSB-7SI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 2Mbit
- Memory Organization:
- 128K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
R1LV0216BSB-7SI#B0 FAQ
1.How can I place an order for R1LV0216BSB-7SI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0216BSB-7SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0216BSB-7SI#B0 reliable?
The price and inventory of R1LV0216BSB-7SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0216BSB-7SI#B0 is usually 5 days.
3.What payment methods are accepted for R1LV0216BSB-7SI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0216BSB-7SI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0216BSB-7SI#B0?
R1LV0216BSB-7SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0216BSB-7SI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0216BSB-7SI#B0?
For technical support, including R1LV0216BSB-7SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0216BSB-7SI#B0 requirements.
6.How does Aetrix verify that R1LV0216BSB-7SI#B0 is sourced from the original manufacturer or authorized distributors?
All R1LV0216BSB-7SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0216BSB-7SI#B0 meets industry standards.
7.What is the process for return or replacement of R1LV0216BSB-7SI#B0?
All R1LV0216BSB-7SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0216BSB-7SI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0216BSB-7SI#B0 part is unused and in its original packaging.
Return procedure for R1LV0216BSB-7SI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV0216BSB-7SI#B0 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
