Renesas R1LV0408DSA-5SR#B0

Overview

R1LV0408DSA-5SR#B0 from Renesas Electronics is a 4-Mbit static RAM organized as 512-kword × 8-bit, fabricated using 0.15 µm CMOS and TFT technologies. It operates from a single 3 V supply (2.7–3.6 V), delivers 55 ns max access time, draws only 0.1 µA typical standby current at +25°C, and is housed in an 8 mm × 13.4 mm STSOP package. It serves as nonvolatile data buffer in battery-backed industrial controllers.

For engineers reviewing the R1LV0408DSA-5SR#B0 datasheet, R1LV0408DSA-5SR#B0 pinout, R1LV0408DSA-5SR#B0 application, or R1LV0408DSA-5SR#B0 equivalent, key selection criteria include low-voltage retention (2 V min), TTL-compatible I/O, three-state output control, and −40°C to +85°C extended temperature operation.

Technical Context

The R1LV0408DSA-5SR#B0 implements a synchronous SRAM architecture with common I/O bus, full address decoding (A0–A18), and independent chip select (CS#), output enable (OE#), and write enable (WE#) controls. Its timing supports equal access and cycle times, enabling deterministic read/write sequencing without external wait-state generation.

It features dual power management modes: active operation with ≤10 mA ICC and ultra-low-power standby (ISB1 = 1 µA typ at +25°C, 2.5 µA max) activated when CS# is high. Data retention remains valid down to VCC = 2.0 V with ICCDR ≤ 2.5 µA, making it suitable for brown-out and backup-power scenarios.

Key Specifications

Pinout & Package

Package: 32-pin STSOP (8 mm × 13.4 mm, 32P3K-B), surface-mount, lead-free compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with R1LV0408DSA-5SR#B0, CY62148EV30LL-55ZSXIT offers broader supply flexibility but trades 2× higher standby draw, while AS6C4008-55ZIN reduces leakage by half yet requires 30% more PCB area-making R1LV0408DSA-5SR#B0 optimal for compact, battery-constrained industrial modules.

Availability

R1LV0408DSA-5SR#B0 is available at Aetrix Electronics and suitable for smart metering, industrial PLCs, medical diagnostics, and avionics data loggers requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for R1LV0408DSA-5SR#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.

The R1LV0408D Series was designed specifically for low-power, battery-backed SRAM applications demanding extended temperature operation, high reliability, and minimal standby current in space-constrained industrial modules.

FAQ

What is the maximum operating frequency supported by the R1LV0408DSA-5SR#B0?

The R1LV0408DSA-5SR#B0 does not operate on a clock signal-it is an asynchronous SRAM. Its performance is defined by access time (tAA ≤ 55 ns) and cycle time (tRC ≤ 55 ns), supporting effective bus rates up to ~18 MHz when interfaced with controllers having zero-wait-state capability. The R1LV0408DSA-5SR#B0 achieves this without internal clocking, reducing jitter sensitivity and simplifying timing closure.

Does the R1LV0408DSA-5SR#B0 support battery backup mode, and what is the minimum VCC for data retention?

Yes, the R1LV0408DSA-5SR#B0 supports true battery backup operation with guaranteed data retention down to VCC = 2.0 V. At this voltage, ICCDR remains ≤ 2.5 µA (max at +25°C), allowing continuous memory hold using small backup cells or supercapacitors. This behavior is validated across the full −40°C to +85°C range per the Low VCC Data Retention Characteristics table in the datasheet.

Is the R1LV0408DSA-5SR#B0 pin-compatible with other devices in the R1LV0408D Series?

Yes, the R1LV0408DSA-5SR#B0 shares identical pinout and signal definitions with all 32-pin variants in the R1LV0408D Series-including SOP (R1LV0408DSP-5S%) and TSOP II (R1LV0408DSB-5S%) packages. Address (A0–A18), data (I/O0–I/O7), and control pins (CS#, OE#, WE#, VCC, VSS) occupy identical positions across all 32-pin footprints, enabling package interchangeability on the same PCB land pattern.

What are the thermal and packaging specifications for the R1LV0408DSA-5SR#B0?

The R1LV0408DSA-5SR#B0 uses an 8 mm × 13.4 mm STSOP package (32P3K-B), rated for operation from −40°C to +85°C. Its junction-to-ambient thermal resistance (θJA) is 120°C/W, and maximum power dissipation is 0.7 W. The device is lead-free and RoHS-compliant, with moisture sensitivity level (MSL) 3 per J-STD-020, requiring bake conditioning if exposed to ambient >30°C/60% RH for >168 hours.

How does the R1LV0408DSA-5SR#B0 handle bus contention during write cycles?

The R1LV0408DSA-5SR#B0 avoids bus contention through strict timing control: write initiation requires simultaneous low transitions of CS# and WE#, and tWP (write pulse width ≥ 40 ns) must satisfy tWP ≥ tDW(min) + tWHZ(max) when OE# is held low. During write, I/O pins switch to input mode; output drivers are disabled, preventing conflict with external drivers. The R1LV0408DSA-5SR#B0 enforces this via internal timing logic-not external arbitration.