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Renesas R1LV0408DSB-5SI#B0
- Part No.:
- R1LV0408DSB-5SI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-SOIC (0.400", 10.16mm Width)
- Datasheet:
-
R1LV0408DSB-5SI#B0.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 32TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:3,118
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Product details
Overview
R1LV0408DSB-5SI#B0 from Renesas Electronics is a 4-Mbit static RAM organized as 512-kword × 8-bit, fabricated using 0.15 µm CMOS and TFT technologies. It operates from a single 3 V supply (2.7–3.6 V), delivers 55 ns max access time, and draws only 0.1 µA typical standby current at −40 to +85°C. It is designed for low-power, battery-backed memory applications in industrial control and portable instrumentation.
For engineers reviewing the R1LV0408DSB-5SI#B0 datasheet, R1LV0408DSB-5SI#B0 pinout, R1LV0408DSB-5SI#B0 application, or R1LV0408DSB-5SI#B0 equivalent, key selection criteria include its TSOP II package compatibility, TTL-level I/O interface, common data I/O bus with three-state output, and guaranteed data retention down to 2 V VCC.
Technical Context
The R1LV0408DSB-5SI#B0 implements a full asynchronous SRAM architecture with independent address decoding (A0–A18), shared bidirectional I/O lines (I/O0–I/O7), and standard control signals (CS#, OE#, WE#). Its timing supports equal access and cycle times, enabling deterministic read/write operation without external wait-state generation.
It features direct TTL compatibility on all inputs and outputs, a 32-pin TSOP II (400-mil) package footprint, and low-voltage data retention capability (VDR = 2 V) with ICCDR ≤ 2.5 µA at +25°C. Standby power dissipation is specified at 3 µW typical, supporting long-term battery backup in unpowered states.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 4 Mbit (512 kwords × 8 bits) - provides byte-wide storage for microcontroller-based systems requiring non-refreshed volatile memory |
| Supply voltage | 2.7–3.6 V - compatible with 3 V logic rails and tolerant of Li-ion battery discharge profiles |
| Access time | 55 ns max - enables direct interfacing with legacy 20 MHz microcontrollers without wait states |
| Standby current | 0.1 µA typ (−40 to +85°C) - ensures multi-year battery life in always-on backup mode |
| Data retention VCC | 2.0 V min - maintains stored data during brown-out or partial power loss |
| I/O interface | Common bidirectional bus with three-state output - reduces PCB trace count and simplifies bus arbitration |
| Input compatibility | TTL-level (VIH ≥ 2.2 V, VIL ≤ 0.6 V) - eliminates need for level-shifting when interfacing with 3.3 V or 5 V controllers |
Pinout & Package
Package: 32-pin TSOP II (400-mil), JEDEC MO-141AC compliant, body size 11.8 × 13.6 mm, 0.5 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address input | 19-bit address bus supporting full 512-kword addressing; no address multiplexing required |
| I/O0–I/O7 | Data input/output | Bidirectional 8-bit data bus with three-state control; shares pins for read and write cycles |
| CS# | Chip select | Active-low enable controlling device activation; high-Z output when deasserted |
| OE# | Output enable | Active-low signal gating output drivers; allows read data to be held or disabled independently of CS# |
| WE# | Write enable | Active-low signal initiating write cycles; combined with CS# to define valid write window |
| VCC | Power supply | Primary 3 V supply pin; decoupling recommended within 10 mm of pin |
| VSS | Ground | Digital ground reference; requires low-inductance connection to system GND plane |
Key Features
| Feature | Design Value |
|---|---|
| Single 3 V supply operation | Eliminates dual-rail power design; supports direct integration into 3.3 V embedded systems without regulators |
| 55 ns access time with equal cycle time | Enables predictable timing margins in synchronous bus interfaces without dynamic wait-state insertion |
| 0.1 µA typical standby current | Extends battery life in backup memory applications beyond 10 years under continuous low-VCC hold conditions |
| Direct TTL compatibility | Permits plug-in replacement of legacy 5 V SRAMs in mixed-voltage systems using level translators or resistive pull-ups |
| Low-voltage data retention (2.0 V) | Maintains memory integrity during brown-out events or gradual battery depletion without external supervision circuitry |
Applications
| Industrial PLC Data Buffer | Portable Medical Instrument Memory |
|---|---|
Use Scenario: Real-time logging of sensor readings and alarm history in programmable logic controllers deployed in factory automation cabinets. IC Role / Device Role / Timing Role: Volatile data buffer storing operational logs and configuration snapshots between controller resets or firmware updates. Use Value: 55 ns access time ensures seamless integration with 16-bit microcontrollers; 0.1 µA standby current enables >5-year battery-backed retention without maintenance. |
Use Scenario: Temporary storage of ECG waveform segments and calibration parameters in handheld diagnostic devices powered by coin-cell batteries. IC Role / Device Role / Timing Role: Low-power SRAM holding real-time acquisition buffers and user-adjustable settings during active measurement and sleep modes. Use Value: 2.0 V data retention threshold matches end-of-life voltage of CR2032 cells; TSOP II package enables compact, double-sided PCB layouts. |
| Automotive Telematics Event Recorder | Network Edge Router Packet Buffer |
Use Scenario: Capturing CAN bus error frames and GPS timestamps during vehicle crash events for post-incident analysis. IC Role / Device Role / Timing Role: Non-refreshed memory capturing time-critical telemetry before main power fails or backup capacitor discharges. Use Value: Guaranteed operation across −40 to +85°C ambient range; 3 µW typical standby power minimizes thermal load in sealed enclosures. |
Use Scenario: Storing fragmented Ethernet packets during traffic bursts in small-form-factor enterprise switches with space-constrained PCBs. IC Role / Device Role / Timing Role: High-speed packet staging buffer interfaced directly to MAC controllers via 8-bit parallel bus. Use Value: TTL-compatible I/O eliminates level shifters; 32-pin TSOP II footprint saves board area versus SOIC alternatives while maintaining hand-solderability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 16-bit bus width (256k × 16), 10 ns access, 48-pin TSOP I - higher bandwidth but larger footprint and incompatible pinout | Requires PCB redesign and wider data path; suited for high-throughput buffering where byte-width is insufficient | Select only if system demands >8-bit parallel interface and can accommodate 48-pin layout and 3.3 V-only operation |
| AS6C4008-55ZIN | Same 512k × 8 organization and 55 ns speed, but 32-pin SOP package and 2.7–5.5 V supply - broader voltage range but larger 525-mil body | Compatible logic interface but incompatible mechanical fit; suitable for through-hole or legacy SOP-based designs | Choose when existing board uses 32-pin SOP sockets or requires 5 V tolerance not needed in this design |
Compared with R1LV0408DSB-5SI#B0, IS61LV25616AL-10TLI offers faster access and wider data path at the cost of pin compatibility and package size, while AS6C4008-55ZIN retains identical memory architecture and speed but trades TSOP II miniaturization for SOP manufacturability and voltage flexibility.
Availability
R1LV0408DSB-5SI#B0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, portable medical instrument memory, automotive telematics event recording, and network edge router packet buffering requiring stable component supply across extended temperature ranges.
Supply support for R1LV0408DSB-5SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV0408D Series was developed to deliver high-density, low-power asynchronous SRAM for battery-critical embedded systems requiring reliable data retention and TTL interoperability in compact surface-mount packages.
FAQ
What is the operating temperature range for R1LV0408DSB-5SI#B0?
The R1LV0408DSB-5SI#B0 is rated for industrial temperature operation from −40°C to +85°C, as indicated by the "I" suffix in the part number. This range is validated per the Absolute Maximum Ratings and DC Operating Conditions tables in the official Renesas datasheet REJ03C0310-0100 Rev.1.00. The device maintains full functionality-including 55 ns access time and 0.1 µA standby current-across this entire span.
Does R1LV0408DSB-5SI#B0 support true static operation without refresh?
Yes, R1LV0408DSB-5SI#B0 is a fully static RAM: it retains data indefinitely as long as power is applied and does not require periodic refresh cycles. Its architecture uses six-transistor memory cells and asynchronous control logic (CS#, OE#, WE#), eliminating any clock or timing dependency for data retention-confirmed in the Block Diagram and Operation Table sections of the datasheet.
What package type is used for R1LV0408DSB-5SI#B0?
R1LV0408DSB-5SI#B0 uses a 32-pin TSOP II (Thin Small Outline Package, Type II) with 400-mil body width, per the Ordering Information table in the Renesas datasheet. This JEDEC-standard package has a 11.8 mm × 13.6 mm footprint and 0.5 mm lead pitch, optimized for high-density surface-mount assembly and thermal performance in compact designs.
Can R1LV0408DSB-5SI#B0 operate from a 2.5 V supply?
No-R1LV0408DSB-5SI#B0 requires a minimum supply voltage of 2.7 V, as specified in the DC Operating Conditions table. Operation below 2.7 V violates the guaranteed parametric limits: access time, standby current, and data retention are not characterized or assured at 2.5 V. For 2.5 V systems, alternative SRAMs such as the Cypress CY62167EV30 must be evaluated.
How is data retention maintained when VCC drops below normal operating range?
R1LV0408DSB-5SI#B0 guarantees data retention down to VCC = 2.0 V, provided CS# remains asserted (≥ VCC − 0.2 V) and ambient temperature stays within specification. At +25°C, standby current during retention is ≤ 2.5 µA, enabling multi-year battery backup. This behavior is documented in the Low VCC Data Retention Characteristics section (page 12) of the datasheet.
R1LV0408DSB-5SI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-SOIC (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-TSOP II
R1LV0408DSB-5SI#B0 FAQ
1.How can I place an order for R1LV0408DSB-5SI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0408DSB-5SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0408DSB-5SI#B0 reliable?
The price and inventory of R1LV0408DSB-5SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0408DSB-5SI#B0 is usually 5 days.
3.What payment methods are accepted for R1LV0408DSB-5SI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0408DSB-5SI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0408DSB-5SI#B0?
R1LV0408DSB-5SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0408DSB-5SI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0408DSB-5SI#B0?
For technical support, including R1LV0408DSB-5SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0408DSB-5SI#B0 requirements.
6.How does Aetrix verify that R1LV0408DSB-5SI#B0 is sourced from the original manufacturer or authorized distributors?
All R1LV0408DSB-5SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0408DSB-5SI#B0 meets industry standards.
7.What is the process for return or replacement of R1LV0408DSB-5SI#B0?
All R1LV0408DSB-5SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0408DSB-5SI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0408DSB-5SI#B0 part is unused and in its original packaging.
Return procedure for R1LV0408DSB-5SI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV0408DSB-5SI#B0 Tags
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