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Renesas R1LV0408DSB-7LR#B0
- Part No.:
- R1LV0408DSB-7LR#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 32-SOIC (0.400", 10.16mm Width)
- Datasheet:
-
R1LV0408DSB-7LR#B0.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 32TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:2,004
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Product details
Overview
R1LV0408DSB-7LR#B0 from Renesas Electronics is a 4-Mbit static RAM organized as 512-kword × 8-bit, fabricated in 0.15 µm CMOS/TFT process, operating from a single 3 V supply (2.7–3.6 V), with 70 ns max access time and 3 µW typical standby power dissipation - designed for low-power battery-backed memory applications in industrial control and portable instrumentation.
For engineers reviewing the R1LV0408DSB-7LR#B0 datasheet, R1LV0408DSB-7LR#B0 pinout, R1LV0408DSB-7LR#B0 application, or R1LV0408DSB-7LR#B0 equivalent, key selection criteria include its TSOP II package compatibility, TTL-level I/O interface, 32-pin address/data multiplexing architecture, and verified data retention down to 2 V at −40°C to +85°C.
Technical Context
The R1LV0408DSB-7LR#B0 implements a synchronous SRAM architecture with common I/O bus, three-state outputs, and independent chip select (CS#), output enable (OE#), and write enable (WE#) controls. Its timing supports equal access and cycle times, enabling deterministic read/write sequencing without external wait-state logic.
It features dual-mode operation: active mode with ICC ≤ 10 mA (typical), and ultra-low-power standby mode with ISB1 ≤ 10 µA at +25°C and ≤ 20 µA at +70°C. Data retention remains guaranteed at VCC ≥ 2.0 V with ICCDR ≤ 10 µA across its full industrial temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Mbit (512 kwords × 8 bits) - supports byte-wide data paths without external demultiplexing |
| Supply voltage | 2.7–3.6 V - compatible with 3 V logic families and battery-backed systems using Li-ion or coin cells |
| Access time | 70 ns max - defines worst-case read latency for real-time control loops requiring sub-100 ns memory response |
| Standby current | 10 µA max at +25°C - enables multi-year operation on backup batteries in non-volatile SRAM configurations |
| Data retention VCC | 2.0 V min - ensures reliable memory hold during brown-out or power-fail conditions without external regulators |
| I/O interface | TTL-compatible inputs/outputs - eliminates level-shifting requirements when interfacing with legacy microcontrollers |
| Operating temperature | −40°C to +85°C - qualified for industrial-grade embedded systems deployed in uncontrolled environments |
Pinout & Package
Package: 400-mil 32-pin plastic TSOP II (32P3Y-H), surface-mount, 12.0 mm × 20.0 mm footprint, 0.5 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address input | 19-bit address bus supporting full 512-kword decoding; no external address latching required |
| I/O0–I/O7 | Data input/output | Bi-directional 8-bit data bus with three-state control; shares pins to reduce PCB trace count |
| CS# | Chip select | Active-low enable controlling device activation; used for memory banking or peripheral isolation |
| OE# | Output enable | Active-low control for output buffer gating; allows read data to be held high-Z during bus sharing |
| WE# | Write enable | Active-low signal initiating write cycles; combined with CS# to define valid write windows per timing spec |
| VCC | Power supply | Primary 3 V supply pin; decoupling required within 5 mm for stable 70 ns operation |
| VSS | Ground | Dedicated ground reference; paired with VCC for low-noise power delivery in high-speed SRAM operation |
Key Features
| Feature | Design Value |
|---|---|
| Single 3 V supply operation | Eliminates dual-rail power design complexity and reduces BOM cost in portable and battery-powered systems |
| 70 ns access with equal tRC/tAA | Enables predictable timing closure in FPGA- or MCU-based systems without dynamic wait-state insertion |
| 3 µW typical standby power | Extends battery life in always-on monitoring devices where memory must retain state between wake cycles |
| Direct TTL compatibility | Permits plug-in replacement of legacy 3 V SRAMs without redesigning level-shifter circuitry |
| 2 V data retention threshold | Supports seamless transition to backup power sources during main supply interruption without data loss |
Applications
| Industrial PLC Data Buffer | Portable Medical Instrument Memory |
|---|---|
Use Scenario: Real-time logging of sensor inputs and control outputs in programmable logic controllers with cyclic scan execution. IC Role / Device Role / Timing Role: Primary working memory for firmware-executed ladder logic routines, accessed at 10–100 kHz update rates. Use Value: 70 ns access time ensures deterministic scan cycle completion; low standby current preserves configuration during power-loss events. | Use Scenario: Storing calibration coefficients and patient waveform history in handheld ECG or pulse oximeters. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory retaining critical settings and last-session data during battery replacement. Use Value: 2 V data retention guarantees integrity even when primary battery drops below 2.5 V; TSOP II package enables compact PCB layout. |
| Automotive Body Control Module | Test & Measurement Equipment Cache |
Use Scenario: Temporary storage of door lock status, lighting sequences, and diagnostic fault codes in 12 V automotive subsystems. IC Role / Device Role / Timing Role: Fast-access SRAM for volatile runtime variables, isolated from main MCU bus via dedicated CS# line. Use Value: −40°C to +85°C rating ensures reliability under hood temperature extremes; TTL compatibility simplifies integration with legacy CAN microcontrollers. | Use Scenario: High-speed acquisition buffering in digital oscilloscopes and logic analyzers capturing transient signals. IC Role / Device Role / Timing Role: First-stage capture memory feeding into deeper FPGA-based FIFOs, synchronized to sample clocks up to 14 MHz. Use Value: Equal tAA/tRC timing eliminates setup/hold uncertainty; 32-pin TSOP II allows dense memory arrays on high-channel-count boards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 256K × 16-bit organization, 10 ns access, 3.3 V only, 48-pin TSOPII | Higher density and speed but wider data bus and incompatible pinout | Select when 16-bit data path and <10 ns latency are required; requires PCB redesign |
| AS6C4008-70SCN | 4M × 8-bit, 70 ns access, 2.7–3.6 V, 32-pin SOP (not TSOP) | Same density/speed/voltage but different package thermal profile and mounting height | Choose for through-hole prototyping or where SOP reflow compatibility is preferred over TSOP space savings |
Compared with R1LV0408DSB-7LR#B0, the IS61LV25616AL-10TLI offers faster performance but demands board-level changes due to wider bus and pinout mismatch, while the AS6C4008-70SCN provides identical electrical behavior in a legacy SOP package - making it suitable for drop-in validation but not for volume TSOP II production layouts.
Availability
R1LV0408DSB-7LR#B0 is available at Aetrix Electronics and suitable for industrial automation, portable medical instrumentation, automotive body electronics, and test equipment requiring stable component supply with long-term lifecycle assurance.
Supply support for R1LV0408DSB-7LR#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV0408D Series was developed to provide low-power, industrial-temperature SRAMs optimized for battery-backed and space-constrained embedded systems requiring reliable 3 V operation without external voltage translation.
FAQ
What is the maximum operating frequency supported by R1LV0408DSB-7LR#B0?
R1LV0408DSB-7LR#B0 does not operate on a clock signal; it is an asynchronous SRAM. Its maximum effective throughput is governed by its 70 ns access and cycle times, supporting up to ~14.3 MHz random read/write operations under ideal timing conditions. The R1LV0408DSB-7LR#B0 datasheet specifies tRC = 70 ns as the minimum read or write cycle time, with no internal clock or frequency rating.
Does R1LV0408DSB-7LR#B0 require external pull-up resistors on control lines?
No, R1LV0408DSB-7LR#B0 does not require external pull-up resistors on CS#, OE#, or WE# - all control inputs have TTL-compatible thresholds (VIH ≥ 2.2 V, VIL ≤ 0.6 V) and sufficient noise margin for direct connection to 3 V microcontroller GPIOs. The R1LV0408DSB-7LR#B0 datasheet confirms VIH min = 2.2 V and VIL max = 0.6 V at VCC = 3.0 V, eliminating need for biasing components in standard designs.
Can R1LV0408DSB-7LR#B0 retain data during complete power removal?
No - R1LV0408DSB-7LR#B0 is a volatile SRAM and requires continuous VCC ≥ 2.0 V to retain data. It supports low-voltage data retention (down to 2 V) but ceases memory function when VCC falls below that threshold. For true non-volatility, the R1LV0408DSB-7LR#B0 must be paired with a backup battery or supercapacitor maintaining VCC above 2 V during main power loss.
Is R1LV0408DSB-7LR#B0 RoHS compliant and lead-free?
Yes, R1LV0408DSB-7LR#B0 is RoHS compliant and lead-free. Per Renesas documentation and product marking, the "#B0" suffix denotes lead-free, halogen-free packaging conforming to EU RoHS Directive 2011/65/EU and JEDEC JS-001 standards. The R1LV0408DSB-7LR#B0 TSOP II package uses matte tin terminal finish and meets IPC/JEDEC J-STD-020 moisture sensitivity level 3.
What is the meaning of "R" and "7L" in R1LV0408DSB-7LR#B0?
In R1LV0408DSB-7LR#B0, "7L" indicates 70 ns access time and "R" denotes the commercial temperature grade (0°C to +70°C). Although the full R1LV0408D Series supports both R (0–70°C) and I (−40–+85°C) versions, the "R" suffix in this specific part number confirms its rated operation from 0°C to +70°C - distinct from industrial-grade variants like R1LV0408DSB-7LI#B0. The R1LV0408DSB-7LR#B0 datasheet explicitly lists "R" under Temperature Range on page 2.
R1LV0408DSB-7LR#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 32-SOIC (0.400", 10.16mm Width)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-TSOP II
R1LV0408DSB-7LR#B0 FAQ
1.How can I place an order for R1LV0408DSB-7LR#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0408DSB-7LR#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0408DSB-7LR#B0 reliable?
The price and inventory of R1LV0408DSB-7LR#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0408DSB-7LR#B0 is usually 5 days.
3.What payment methods are accepted for R1LV0408DSB-7LR#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0408DSB-7LR#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0408DSB-7LR#B0?
R1LV0408DSB-7LR#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0408DSB-7LR#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0408DSB-7LR#B0?
For technical support, including R1LV0408DSB-7LR#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0408DSB-7LR#B0 requirements.
6.How does Aetrix verify that R1LV0408DSB-7LR#B0 is sourced from the original manufacturer or authorized distributors?
All R1LV0408DSB-7LR#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0408DSB-7LR#B0 meets industry standards.
7.What is the process for return or replacement of R1LV0408DSB-7LR#B0?
All R1LV0408DSB-7LR#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0408DSB-7LR#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0408DSB-7LR#B0 part is unused and in its original packaging.
Return procedure for R1LV0408DSB-7LR#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV0408DSB-7LR#B0 Tags
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