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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas R1LV0408DSB-7LR#S0

Name: R1LV0408DSB-7LR#S0
Brand: Renesas
SKU: R1LV0408DSB-7LR#S0
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: R1LV0408DSB-7LR#S0

Manufacturer:: Renesas

Category:: Memory

Package:: 32-SOIC (0.400", 10.16mm Width)

Datasheet:: R1LV0408DSB-7LR#S0.pdf

Description:: IC SRAM 4MBIT PARALLEL 32TSOP II

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Product details

Overview

R1LV0408DSB-7LR#S0 from Renesas Electronics is a 4-Mbit static RAM organized as 512-kword × 8-bit, fabricated in 0.15 µm CMOS/TFT process, operating from a single 2.7–3.6 V supply with 70 ns max access time and 3 µW typical standby power dissipation-designed for low-power battery-backed memory applications such as real-time clock data retention and embedded controller firmware caching.

For engineers reviewing the R1LV0408DSB-7LR#S0 datasheet, R1LV0408DSB-7LR#S0 pinout, R1LV0408DSB-7LR#S0 application, or R1LV0408DSB-7LR#S0 equivalent, key selection criteria include TSOP II package compatibility, −40°C to +85°C industrial temperature range, TTL-level I/O interface, and verified low-V_CC data retention down to 2.0 V.

Technical Context

The R1LV0408DSB-7LR#S0 implements asynchronous SRAM architecture with common I/O bus, three-state outputs, and full TTL-compatible input/output signaling. Its timing is governed by independent chip select (CS#), output enable (OE#), and write enable (WE#) controls, supporting both read and write cycles without external clocks.

It features dual-mode standby: ISB1 = 10 µA (max) at +85°C and ICCDR = 10 µA (max) during data retention at V_CC = 2.0 V, enabling reliable operation in battery backup systems where power budget and voltage droop are critical constraints.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory size	4 Mbit (512 kwords × 8 bits) - supports byte-wide data paths in microcontroller peripherals and legacy bus interfaces.
Supply voltage	2.7–3.6 V - compatible with 3.3 V logic domains and tolerant of brown-out conditions down to 2.0 V for data retention.
Access time	70 ns (max) - defines worst-case read latency for deterministic timing in real-time control loops.
Standby current	10 µA (max) at +85°C - enables multi-year battery life in always-on backup memory applications.
Data retention V_CC	2.0 V minimum - guarantees nonvolatile data hold during main supply failure or deep sleep modes.
Package	32-pin TSOP II (400-mil) - surface-mount footprint compatible with high-density PCB layouts and automated assembly.
Temperature range	−40°C to +85°C - qualified for industrial and automotive under-hood environments without derating.

Pinout & Package

Package: 32-pin plastic TSOP II (32P3Y-H), 400-mil body width, standard JEDEC-compliant footprint with gull-wing leads.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address inputs	19-bit address bus supporting full 512-kword decoding; A18 is MSB for 4-Mbit addressing.
I/O0–I/O7	Bi-directional data bus	Common 8-bit data path with three-state output control; shares pins for read/write to minimize pin count.
CS#	Chip select	Active-low enable that gates all internal operations; high-Z output when deasserted.
OE#	Output enable	Active-low control for output buffer; allows read data to appear only when asserted alongside CS#.
WE#	Write enable	Active-low signal initiating write cycle; combined with CS# to define write window per AC timing specs.
V_CC	Power supply	Single 2.7–3.6 V supply rail; decoupling required within 10 mm of pin per layout guidelines.
V_SS	Ground	Digital ground reference for all I/O and core logic; must be low-impedance plane connection.

Key Features

Feature	Design Value
Single-supply operation	Eliminates need for dual-rail regulators or level shifters in 3.3 V systems, reducing BOM cost and board space.
TTL-compatible I/O	Direct interface with legacy microcontrollers and FPGAs without external translation, simplifying system integration.
Low standby power	3 µW typical dissipation enables >10-year coin-cell battery life in RTC backup applications.
Equal access/cycle times	Removes timing asymmetry between consecutive reads/writes, easing timing margin analysis in synchronous bus designs.
Battery backup support	Validated data retention at V_CC = 2.0 V ensures integrity during main supply interruption or brownout events.

Applications

Real-Time Clock (RTC) Backup Memory	Industrial PLC Data Logging Buffer
Use Scenario: Maintaining calendar, alarm, and configuration data across main power loss in smart meters and HVAC controllers. IC Role / Device Role / Timing Role: Asynchronous SRAM providing nonvolatile storage via external battery while retaining full random-access speed during normal operation. Use Value: Guarantees data integrity for ≥10 years on CR2032 cell due to 10 µA max ISB1 at +85°C and 2.0 V data retention threshold.	Use Scenario: Capturing sensor readings and event timestamps during transient network outages in factory automation gateways. IC Role / Device Role / Timing Role: Byte-addressable buffer interfacing directly to ARM Cortex-M SPI/parallel peripheral units for burst data capture. Use Value: 70 ns access time enables sub-100 µs write latency per 8-bit sample, supporting 10 kHz sampling without DMA overhead.
Medical Device Configuration Storage	Automotive Body Control Module (BCM)
Use Scenario: Storing calibration coefficients, user preferences, and fault history in portable diagnostic tools operating across wide ambient temperatures. IC Role / Device Role / Timing Role: Industrial-grade SRAM serving as persistent configuration store accessible during boot and runtime without wear-out concerns. Use Value: −40°C to +85°C qualification and 2.0 V data retention ensure reliability in uncontrolled clinical environments and transport conditions.	Use Scenario: Holding door lock status, mirror position, and lighting profiles in BCMs where EEPROM endurance is insufficient for frequent updates. IC Role / Device Role / Timing Role: High-endurance, low-latency memory replacing serial EEPROM for volatile parameter storage with instant write capability. Use Value: Eliminates 5–10 ms write delays inherent in EEPROM, enabling real-time response to driver inputs and CAN message triggers.

Real-Time Clock (RTC) Backup Memory

Industrial PLC Data Logging Buffer

Use Scenario: Maintaining calendar, alarm, and configuration data across main power loss in smart meters and HVAC controllers.

IC Role / Device Role / Timing Role: Asynchronous SRAM providing nonvolatile storage via external battery while retaining full random-access speed during normal operation.

Use Value: Guarantees data integrity for ≥10 years on CR2032 cell due to 10 µA max ISB1 at +85°C and 2.0 V data retention threshold.

Use Scenario: Capturing sensor readings and event timestamps during transient network outages in factory automation gateways.

IC Role / Device Role / Timing Role: Byte-addressable buffer interfacing directly to ARM Cortex-M SPI/parallel peripheral units for burst data capture.

Use Value: 70 ns access time enables sub-100 µs write latency per 8-bit sample, supporting 10 kHz sampling without DMA overhead.

Medical Device Configuration Storage

Automotive Body Control Module (BCM)

Use Scenario: Storing calibration coefficients, user preferences, and fault history in portable diagnostic tools operating across wide ambient temperatures.

IC Role / Device Role / Timing Role: Industrial-grade SRAM serving as persistent configuration store accessible during boot and runtime without wear-out concerns.

Use Value: −40°C to +85°C qualification and 2.0 V data retention ensure reliability in uncontrolled clinical environments and transport conditions.

Use Scenario: Holding door lock status, mirror position, and lighting profiles in BCMs where EEPROM endurance is insufficient for frequent updates.

IC Role / Device Role / Timing Role: High-endurance, low-latency memory replacing serial EEPROM for volatile parameter storage with instant write capability.

Use Value: Eliminates 5–10 ms write delays inherent in EEPROM, enabling real-time response to driver inputs and CAN message triggers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS61LV25616AL-10TLI	256K × 16-bit organization, 10 ns access, 3.3 V only, 44-pin TSOP	Higher density and speed but wider data bus and incompatible pinout	Select if 16-bit bus and faster timing are available; requires PCB redesign.
AS6C4008-70ZIN	4-Mbit × 8-bit, 70 ns access, 2.7–3.6 V, 32-pin SOP (not TSOP)	Same density/speed/voltage but different package footprint and thermal profile	Choose for through-hole or SOP-based legacy designs; not drop-in for TSOP II layout.

Compared with R1LV0408DSB-7LR#S0, the IS61LV25616AL-10TLI offers higher bandwidth but demands 16-bit interface changes, while the AS6C4008-70ZIN matches electrical specs but requires SOP-to-TSOP II footprint adaptation-neither is pin-compatible, and both necessitate layout revision.

Availability

R1LV0408DSB-7LR#S0 is available at Aetrix Electronics and suitable for industrial control systems, medical instrumentation, and automotive body electronics requiring stable component supply with guaranteed long-term availability and RoHS-compliant sourcing.

Supply support for R1LV0408DSB-7LR#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LV0408D Series was developed to deliver low-power, high-reliability asynchronous SRAM for battery-critical embedded systems-emphasizing data retention, industrial temperature resilience, and direct TTL interoperability.

FAQ

What is the maximum operating temperature range for the R1LV0408DSB-7LR#S0?

The R1LV0408DSB-7LR#S0 is rated for −40°C to +85°C operation, confirmed by its "I" temperature suffix and validated in DC/AC specifications across this full industrial range. This rating applies to both active operation and standby modes, with ISB1 current specified up to +85°C. The device maintains 70 ns access time and 2.0 V data retention capability throughout this range, making it suitable for under-hood automotive and factory-floor deployments where thermal stability is essential. R1LV0408DSB-7LR#S0 does not support extended temperature grades beyond +85°C.

Does the R1LV0408DSB-7LR#S0 support true 3.3 V logic levels?

Yes, the R1LV0408DSB-7LR#S0 supports true 3.3 V operation with VIH = 2.2 V (min) and VIL = 0.6 V (max), ensuring full TTL compatibility across its 2.7–3.6 V supply range. Input thresholds are designed to interface directly with 3.3 V microcontrollers and FPGAs without level-shifting circuitry. VOH = 2.4 V (min) at IOH = −1.0 mA and VOL = 0.4 V (max) at IOL = 2.1 mA further confirm robust drive strength and noise margin compliance. R1LV0408DSB-7LR#S0 meets these specs across −40°C to +85°C, verified in DC Characteristics tables.

Can the R1LV0408DSB-7LR#S0 retain data during main power failure?

Yes, the R1LV0408DSB-7LR#S0 retains data at V_CC as low as 2.0 V with ICCDR ≤ 10 µA (max) at +85°C, enabling reliable operation during brownouts or battery switchover. Data retention mode activates when CS# ≥ V_CC − 0.2 V and all inputs are held valid; tCDR = 0 ns ensures immediate entry. The device sustains stored contents for years on a coin cell, validated per Low VCC Data Retention Characteristics. R1LV0408DSB-7LR#S0 requires no external circuitry to enter or maintain this state-only proper biasing of CS# and V_CC.

What is the pin compatibility status of R1LV0408DSB-7LR#S0 with other R1LV0408D variants?

R1LV0408DSB-7LR#S0 shares identical pinout and function mapping with all R1LV0408D Series TSOP II variants (e.g., R1LV0408DSB-5S%, R1LV0408DSB-7L%), including A0–A18, I/O0–I/O7, CS#, OE#, WE#, V_CC, and V_SS. Differences are limited to access time (70 ns vs. 55 ns) and temperature grade (I vs. R), with no pin assignment or electrical interface changes. R1LV0408DSB-7LR#S0 is therefore a direct functional and mechanical replacement within the DS× TSOP II family, requiring no PCB modification when upgrading from −5S% or downgrading from −7L% versions.

Is the R1LV0408DSB-7LR#S0 RoHS compliant and lead-free?

Yes, the R1LV0408DSB-7LR#S0 is RoHS compliant and lead-free, as confirmed by Renesas' product change notices and material declarations aligned with EU Directive 2011/65/EU. The "#S0" suffix denotes lead-free, halogen-free packaging per Renesas' standard industrial grade. All solderability, reflow, and thermal cycling specifications assume Pb-free assembly processes (J-STD-020D-compliant peak temperature of 260°C). R1LV0408DSB-7LR#S0 documentation references compliance explicitly in environmental notes, and no exemptions apply to its construction.

R1LV0408DSB-7LR#S0 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 32-SOIC (0.400", 10.16mm Width)

Packaging:: Bulk

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM

Memory Size:: 4Mbit

Memory Organization:: 512K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 70ns

Access Time:: 70 ns

Voltage - Supply:: 2.7V ~ 3.6V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 32-TSOP II

R1LV0408DSB-7LR#S0 FAQ

1.How can I place an order for R1LV0408DSB-7LR#S0 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1LV0408DSB-7LR#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1LV0408DSB-7LR#S0 reliable?

The price and inventory of R1LV0408DSB-7LR#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0408DSB-7LR#S0 is usually 5 days.

3.What payment methods are accepted for R1LV0408DSB-7LR#S0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0408DSB-7LR#S0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1LV0408DSB-7LR#S0?

R1LV0408DSB-7LR#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1LV0408DSB-7LR#S0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LV0408DSB-7LR#S0?

For technical support, including R1LV0408DSB-7LR#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0408DSB-7LR#S0 requirements.

6.How does Aetrix verify that R1LV0408DSB-7LR#S0 is sourced from the original manufacturer or authorized distributors?

All R1LV0408DSB-7LR#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0408DSB-7LR#S0 meets industry standards.

7.What is the process for return or replacement of R1LV0408DSB-7LR#S0?

All R1LV0408DSB-7LR#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0408DSB-7LR#S0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LV0408DSB-7LR#S0 part is unused and in its original packaging.

Return procedure for R1LV0408DSB-7LR#S0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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