Renesas R1LV0414DSB-5SI#B0

Overview

R1LV0414DSB-5SI#B0 from Renesas Electronics is a 4-Mbit static RAM organized as 256-kword × 16-bit, fabricated in 0.15 µm CMOS/TFT process, operating from a single 3.0 V supply (2.7–3.6 V), with 55 ns max access time and 3 µW typical standby power dissipation - designed for battery-backed memory systems in industrial control and portable instrumentation.

For engineers reviewing the R1LV0414DSB-5SI#B0 datasheet, R1LV0414DSB-5SI#B0 pinout, R1LV0414DSB-5SI#B0 application, or R1LV0414DSB-5SI#B0 equivalent, key selection criteria include low-voltage data retention (2 V min), TSOP II 44-pin package compatibility, byte-selectable I/O architecture, and −40°C to +85°C industrial temperature operation.

Technical Context

This SRAM implements a full synchronous interface with independent upper/lower byte enables (UB#/LB#), chip select (CS#), output enable (OE#), and write enable (WE#), supporting common I/O bus sharing and three-state output control. Its architecture features a 2,048 × 2,048 memory matrix with row/column decoding optimized for equal access and cycle times.

It supports dual-mode data retention: either via high-impedance CS# (≥ VCC − 0.2 V) or simultaneous LB#/UB# assertion (≥ VCC − 0.2 V with CS# ≤ 0.2 V), enabling ultra-low ICCDR of 2.5 µA at +25°C under 3.0 V - critical for extended battery backup duration in power-constrained systems.

Key Specifications

Pinout & Package

44-pin plastic TSOP II (400-mil) package with standard JEDEC-compliant footprint and gull-wing leads; RoHS-compliant, lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with CY62148EV30LL-55ZSXI and IS61LV25616AL-10TLI, the R1LV0414DSB-5SI#B0 uniquely balances ultra-low standby current (2.5 µA), guaranteed 2.0 V data retention, and exact 44-pin TSOP II compatibility - making it the sole option for long-life battery-backed industrial memory where pin-for-pin replacement and minimal power overhead are mandatory.

Availability

R1LV0414DSB-5SI#B0 is available at Aetrix Electronics and suitable for industrial PLCs, portable medical instruments, and test & measurement equipment requiring stable component supply, long-term lifecycle support, and guaranteed RoHS-compliant sourcing.

Supply support for R1LV0414DSB-5SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LV0414D Series was developed to deliver high-density, low-power SRAM for battery-critical embedded systems - emphasizing data retention integrity, industrial temperature reliability, and drop-in compatibility with legacy 16-bit bus architectures.

FAQ

What is the minimum supply voltage required to retain data in R1LV0414DSB-5SI#B0?

The R1LV0414DSB-5SI#B0 guarantees data retention down to 2.0 V under specified conditions: either with CS# ≥ VCC − 0.2 V or with LB# and UB# both ≥ VCC − 0.2 V while CS# ≤ 0.2 V. This 2.0 V threshold is validated across the full −40°C to +85°C temperature range and enables robust operation during brown-out events in battery-powered systems. The R1LV0414DSB-5SI#B0 achieves this with a typical data retention current (ICCDR) of just 2.5 µA at +25°C.

Does R1LV0414DSB-5SI#B0 support independent 8-bit reads and writes?

Yes, the R1LV0414DSB-5SI#B0 supports true independent byte operations via dedicated LB# (lower byte) and UB# (upper byte) control signals. When LB# is low and UB# is high, only I/O0–I/O7 are active; when UB# is low and LB# is high, only I/O8–I/O15 respond. Both can be asserted simultaneously for full 16-bit access. This architecture allows precise 8-bit updates without read-modify-write cycles, reducing bus traffic and power consumption in microcontroller-based systems using the R1LV0414DSB-5SI#B0.

What is the maximum operating frequency supported by R1LV0414DSB-5SI#B0?

The R1LV0414DSB-5SI#B0 does not specify a maximum clock frequency because it is an asynchronous SRAM - it has no internal clock. Instead, its timing is governed by absolute parameter limits: a 55 ns maximum read cycle time (tRC), 55 ns maximum address access time (tAA), and 40 ns maximum output enable delay (tOE). These values define the fastest sustainable bus transaction rate - approximately 18.2 MHz for consecutive reads - assuming proper setup/hold timing and signal integrity on the R1LV0414DSB-5SI#B0's parallel bus interface.

Is R1LV0414DSB-5SI#B0 pin-compatible with other 44-pin TSOP II SRAMs?

The R1LV0414DSB-5SI#B0 follows standard 44-pin TSOP II mechanical dimensions and pinout conventions for 16-bit-wide SRAMs, including identical placement of VCC, VSS, A0–A17, I/O0–I/O15, CS#, OE#, WE#, LB#, and UB#. However, pin compatibility does not guarantee functional equivalence: voltage tolerances, timing margins, and data retention behavior differ across manufacturers. Always verify timing waveforms and DC specifications before substituting the R1LV0414DSB-5SI#B0 into an existing design originally intended for another part.

What packaging and environmental compliance does R1LV0414DSB-5SI#B0 meet?

The R1LV0414DSB-5SI#B0 is supplied in a 44-pin plastic TSOP II package with lead-free (Pb-free) terminations and complies with the EU RoHS Directive 2011/65/EU. It is rated for industrial temperature operation (−40°C to +85°C) and classified as a "Standard" quality grade device per Renesas documentation, approved for use in office equipment, communications gear, test instruments, and industrial robots. The R1LV0414DSB-5SI#B0 is not qualified for automotive AEC-Q100 or safety-critical applications.