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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas R1LV0414DSB-7LI#B0

Name: R1LV0414DSB-7LI#B0
Brand: Renesas
SKU: R1LV0414DSB-7LI#B0
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: R1LV0414DSB-7LI#B0

Manufacturer:: Renesas

Category:: Memory

Package:: 44-TSOP (0.400", 10.16mm Width)

Datasheet:: R1LV0414DSB-7LI#B0.pdf

Description:: IC SRAM 4MBIT PARALLEL 44TSOP II

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Product details

Overview

R1LV0414DSB-7LI#B0 from Renesas Electronics is a 4-Mbit static RAM organized as 256-kword × 16-bit, fabricated in 0.15 µm CMOS/TFT process, operating from a single 3.0 V supply (2.7–3.6 V), with 70 ns max access time and 3 µW typical standby power dissipation - designed for low-power battery-backed memory applications in industrial and communications equipment.

For engineers reviewing the R1LV0414DSB-7LI#B0 datasheet, R1LV0414DSB-7LI#B0 pinout, R1LV0414DSB-7LI#B0 application, or R1LV0414DSB-7LI#B0 equivalent, key selection criteria include TSOP II package compatibility, byte-selectable 16-bit I/O interface, −40°C to +85°C industrial temperature range, and low-voltage data retention down to 2.0 V.

Technical Context

This SRAM implements asynchronous operation with independent upper/lower byte control via UB# and LB# pins, enabling partial-word writes without disturbing adjacent bytes. Its architecture supports common I/O with three-state outputs, chip select (CS#), output enable (OE#), and write enable (WE#) for standard parallel memory interfacing.

The device features dual standby modes: one activated by CS# high, another triggered by simultaneous LB# and UB# high with CS# low - both achieving sub-10 µA current at +25°C. Data retention remains valid at VCC ≥ 2.0 V across the full operating temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	4 Mbit (256 kwords × 16 bits) - supports 16-bit microprocessor/microcontroller data bus interfaces without external multiplexing.
Access Time	70 ns (max) - defines minimum read cycle timing for synchronous system integration at up to ~14 MHz burst rate.
Supply Voltage	2.7 V to 3.6 V - compatible with 3.3 V logic families and tolerant of brown-out conditions during battery backup.
Standby Current	10 µA (typ, +25°C) - enables multi-year battery life in always-on backup memory applications.
Data Retention V_CC	2.0 V min - guarantees nonvolatile data hold during deep sleep or power-fail transitions without external capacitor hold-up.
Operating Temperature	−40°C to +85°C - qualified for industrial-grade embedded systems including base stations and programmable logic controllers.
Package	44-pin TSOP II (400-mil) - surface-mount footprint compatible with legacy PCB layouts and automated assembly processes.

Pinout & Package

44-pin plastic TSOP II (400-mil) package with standard JEDEC-compliant lead pitch and body dimensions; suitable for reflow soldering and high-density board layouts.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address input	18-bit address bus supporting full 256-kword decoding; no internal address latching required.
I/O0–I/O7	Data I/O (lower byte)	Bi-directional 8-bit data path enabled only when LB# = low and CS# = low.
I/O8–I/O15	Data I/O (upper byte)	Bi-directional 8-bit data path enabled only when UB# = low and CS# = low.
CS#	Chip select	Active-low global enable; places device in standby when high, overriding all other controls.
OE#	Output enable	Active-low read gate; controls output drivers independently of CS# for bus sharing.
WE#	Write enable	Active-low write strobe; initiates write cycles when CS# and LB#/UB# are also asserted.
UB#, LB#	Byte select	Independent active-low controls for upper/lower byte masking during writes or reads.
V_CC	Power supply	Single 3.3 V supply pin; decoupling recommended within 10 mm per datasheet layout guidelines.
V_SS	Ground	Dedicated ground reference; multiple V_SS pins distributed to minimize switching noise.
NC	No connection	Pin 44 is unconnected; must remain floating - not to be tied to V_CC, V_SS, or signal lines.

Key Features

Feature	Design Value
Single 3.0 V supply operation	Eliminates need for dual-voltage regulators or level shifters in 3.3 V systems, reducing BOM count and board area.
Byte-selectable 16-bit I/O	Enables efficient 8-bit or 16-bit data transfers without external glue logic or data bus multiplexing.
Sub-10 µA standby current at +25°C	Extends battery life in uninterruptible memory backup applications beyond 5 years under typical usage.
2.0 V data retention threshold	Permits seamless transition to backup power sources (e.g., coin cell or supercapacitor) without data loss.
Industrial temperature range (−40°C to +85°C)	Validated for deployment in harsh environments including factory automation and outdoor telecom infrastructure.

Applications

Industrial PLC Data Buffer	Telecom Baseband Memory
Use Scenario: Real-time I/O status logging and configuration storage in programmable logic controllers during mains power interruption. IC Role / Device Role / Timing Role: Asynchronous parallel SRAM providing nonvolatile shadow memory with fast random-access read/write for runtime variables. Use Value: Enables deterministic <70 ns register updates and guaranteed data retention at 2.0 V, eliminating need for EEPROM wear-leveling or flash programming delays.	Use Scenario: Temporary frame buffering in 3G/4G baseband processing units where low-latency access and power efficiency are critical. IC Role / Device Role / Timing Role: High-speed 16-bit data buffer interfaced directly to DSP or FPGA memory controllers using standard CS#/OE#/WE# protocol. Use Value: Delivers consistent 70 ns access across temperature and voltage, supporting real-time signal processing pipelines without wait states.
Medical Diagnostic Equipment Cache	Point-of-Sale Terminal Backup RAM
Use Scenario: Storing calibration coefficients and last-known sensor readings in portable ultrasound or ECG devices during battery swaps. IC Role / Device Role / Timing Role: Low-power static RAM maintaining volatile configuration data during brief power gaps between battery modules. Use Value: Achieves 10 µA standby current at +25°C and retains data down to 2.0 V, ensuring zero data loss during hot-swap operations.	Use Scenario: Preserving transaction logs and session state in retail POS terminals powered by backup batteries during AC outages. IC Role / Device Role / Timing Role: Byte-addressable SRAM used for atomic write operations on financial records with LB#/UB# granularity. Use Value: Supports reliable partial-word writes without read-modify-write overhead, reducing EEPROM endurance stress and improving transaction throughput.

Industrial PLC Data Buffer

Telecom Baseband Memory

Use Scenario: Real-time I/O status logging and configuration storage in programmable logic controllers during mains power interruption.

IC Role / Device Role / Timing Role: Asynchronous parallel SRAM providing nonvolatile shadow memory with fast random-access read/write for runtime variables.

Use Value: Enables deterministic <70 ns register updates and guaranteed data retention at 2.0 V, eliminating need for EEPROM wear-leveling or flash programming delays.

Use Scenario: Temporary frame buffering in 3G/4G baseband processing units where low-latency access and power efficiency are critical.

IC Role / Device Role / Timing Role: High-speed 16-bit data buffer interfaced directly to DSP or FPGA memory controllers using standard CS#/OE#/WE# protocol.

Use Value: Delivers consistent 70 ns access across temperature and voltage, supporting real-time signal processing pipelines without wait states.

Medical Diagnostic Equipment Cache

Point-of-Sale Terminal Backup RAM

Use Scenario: Storing calibration coefficients and last-known sensor readings in portable ultrasound or ECG devices during battery swaps.

IC Role / Device Role / Timing Role: Low-power static RAM maintaining volatile configuration data during brief power gaps between battery modules.

Use Value: Achieves 10 µA standby current at +25°C and retains data down to 2.0 V, ensuring zero data loss during hot-swap operations.

Use Scenario: Preserving transaction logs and session state in retail POS terminals powered by backup batteries during AC outages.

IC Role / Device Role / Timing Role: Byte-addressable SRAM used for atomic write operations on financial records with LB#/UB# granularity.

Use Value: Supports reliable partial-word writes without read-modify-write overhead, reducing EEPROM endurance stress and improving transaction throughput.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS61LV25616AL-70TQLI	Same density and 16-bit bus, but uses 48-pin TSOPII; 70 ns access, 3.3 V only; no explicit low-V_CC retention spec.	Lacks documented 2.0 V data retention - unsuitable for battery-fail scenarios requiring extended hold-up.	Select when board layout accommodates 48-pin footprint and retention voltage margin is not required.
AS6C4008-70PCN	4-Mbit × 8-bit organization; 44-pin SOJ; 70 ns access; 2.7–3.6 V; 1 µA standby (typ); no byte-select pins.	Fixed 8-bit bus width requires two devices for 16-bit interface; no UB#/LB# - limits partial-word write flexibility.	Choose for cost-sensitive 8-bit systems where byte masking is unnecessary and SOJ is acceptable.

Compared with IS61LV25616AL-70TQLI and AS6C4008-70PCN, R1LV0414DSB-7LI#B0 uniquely combines 44-pin TSOP II compatibility, true 16-bit byte-select capability, and verified 2.0 V data retention - making it optimal for space-constrained industrial designs requiring robust battery-backup integrity.

Availability

R1LV0414DSB-7LI#B0 is available at Aetrix Electronics and suitable for industrial PLCs, telecom baseband units, and medical diagnostic equipment requiring stable component supply, long-lifecycle support, and guaranteed TSOP II packaging consistency.

Supply support for R1LV0414DSB-7LI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and memory solutions for industrial, automotive, and communications markets.

The R1LV0414D Series was developed to deliver high-density, low-power asynchronous SRAM for battery-backed applications in space- and energy-constrained embedded systems.

FAQ

What is the maximum operating frequency supported by R1LV0414DSB-7LI#B0?

R1LV0414DSB-7LI#B0 does not operate synchronously and has no clock input; its performance is defined by access and cycle times. With a 70 ns maximum access time, it supports effective burst read/write rates up to approximately 14.3 MHz in systems with zero wait-state controllers. Actual throughput depends on bus protocol overhead and controller timing margins.

Does R1LV0414DSB-7LI#B0 support true 16-bit parallel operation?

Yes, R1LV0414DSB-7LI#B0 supports full 16-bit parallel operation via I/O0–I/O15 pins. It also allows independent 8-bit access using LB# and UB# controls - enabling efficient byte-level writes without affecting adjacent data, which is essential for compact firmware variable storage.

Can R1LV0414DSB-7LI#B0 retain data during complete power loss?

No - R1LV0414DSB-7LI#B0 is a volatile SRAM and requires continuous power to retain data. However, it maintains data integrity down to V_CC = 2.0 V, allowing integration with backup sources like supercapacitors or coin cells to bridge short power interruptions without data loss.

Is R1LV0414DSB-7LI#B0 RoHS compliant?

Yes, R1LV0414DSB-7LI#B0 is RoHS compliant per EU Directive 2011/65/EU. Renesas confirms lead-free TSOP II packaging and halogen-free molding compound in accordance with industry-standard environmental specifications published in the device's official compliance documentation.

What is the meaning of "#B0" suffix in R1LV0414DSB-7LI#B0?

The "#B0" suffix in R1LV0414DSB-7LI#B0 denotes a specific tape-and-reel packaging variant per Renesas ordering conventions: "B0" indicates 1,000-unit reels with standard carrier tape width and orientation, optimized for SMT placement equipment compatibility and traceable lot control.

R1LV0414DSB-7LI#B0 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 44-TSOP (0.400", 10.16mm Width)

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM

Memory Size:: 4Mbit

Memory Organization:: 256K x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 70ns

Access Time:: 70 ns

Voltage - Supply:: 2.7V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 44-TSOP II

R1LV0414DSB-7LI#B0 FAQ

1.How can I place an order for R1LV0414DSB-7LI#B0 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1LV0414DSB-7LI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1LV0414DSB-7LI#B0 reliable?

The price and inventory of R1LV0414DSB-7LI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0414DSB-7LI#B0 is usually 5 days.

3.What payment methods are accepted for R1LV0414DSB-7LI#B0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0414DSB-7LI#B0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1LV0414DSB-7LI#B0?

R1LV0414DSB-7LI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1LV0414DSB-7LI#B0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LV0414DSB-7LI#B0?

For technical support, including R1LV0414DSB-7LI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0414DSB-7LI#B0 requirements.

6.How does Aetrix verify that R1LV0414DSB-7LI#B0 is sourced from the original manufacturer or authorized distributors?

All R1LV0414DSB-7LI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0414DSB-7LI#B0 meets industry standards.

7.What is the process for return or replacement of R1LV0414DSB-7LI#B0?

All R1LV0414DSB-7LI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0414DSB-7LI#B0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LV0414DSB-7LI#B0 part is unused and in its original packaging.

Return procedure for R1LV0414DSB-7LI#B0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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