Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas R1LV0416CSB-7LI#D0

Part No.:
R1LV0416CSB-7LI#D0
Manufacturer:
Renesas
Category:
Memory
Package:
-
Datasheet:
AetrixR1LV0416CSB-7LI#D0.pdf
Description:
STANDARD SRAM, 256KX16, 70NS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:667

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

R1LV0416CSB-7LI#D0 from Renesas is a 4-Mbit static RAM organized as 256-kword × 16-bit, fabricated in CMOS technology with a 6-transistor memory cell. It operates from a single 2.2–3.6 V supply, delivers 70 ns max access time, and draws only 1.5 µW typical standby current at 3.0 V - making it suitable for battery-backed industrial control modules requiring nonvolatile data retention without refresh.

For engineers reviewing the R1LV0416CSB-7LI#D0 datasheet, R1LV0416CSB-7LI#D0 pinout, R1LV0416CSB-7LI#D0 application, or R1LV0416CSB-7LI#D0 equivalent, this device supports dual chip select (CS1#, CS2) for battery backup mode, byte-level write control via LB#/UB#, and full static operation with no clock or timing strobe required.

Technical Context

The R1LV0416CSB-7LI#D0 implements a fully static memory architecture with no internal refresh circuitry, relying on stable DC bias for data retention. Its 256-kword × 16-bit organization maps to 18 address lines (A0–A17) and 16 bidirectional I/O pins (I/O0–I/O15), enabling direct interface with 16-bit microcontrollers and DSPs without external data bus transceivers.

It supports three independent standby entry methods - via CS2 low, CS1# high with CS2 in valid range, or simultaneous LB#/UB# high - each yielding sub-10 µA standby current at +25°C. The device uses separate output enable (OE#) and write enable (WE#) controls, with dedicated upper/lower byte selects allowing partial-word writes without read-modify-write cycles.

Key Specifications

Parameter Value and Actual Design Meaning
Memory density4 Mbit (256 kwords × 16 bits) - supports 16-bit parallel data paths without multiplexing
Access time70 ns max - defines minimum read cycle duration for synchronous system timing budgeting
Supply voltage2.2 V to 3.6 V - enables interoperability with both 2.5 V and 3.0 V logic domains
Standby current1.5 µW typ at 3.0 V - allows multi-year operation on coin-cell batteries in maintenance-free systems
Operating temperature−40°C to +85°C - qualified for industrial-grade embedded applications without derating
Data retention voltage2.0 V min - retains stored data during brown-out or backup power transitions
Package44-pin TSOP II (400-mil) - surface-mount compatible with standard reflow profiles and automated assembly

Pinout & Package

44-pin plastic TSOP II (400-mil) package with gull-wing leads, JEDEC MO-141AC compliant, 1.27 mm pitch, body width 10.16 mm.

Pin/Terminal Circuit Role Design Meaning
A0–A17Address input18-bit address bus accepting full 256-kword address space; no address multiplexing required
I/O0–I/O15Data input/output16-bit bidirectional data bus with three-state output drivers controlled by OE#, CS1#, and CS2
CS1#, CS2Chip select inputsDual chip select enables battery backup mode when CS2 = low or CS1# = high with CS2 in valid range
OE#Output enableControls output buffer state independently of write operations; allows read masking without affecting WE# timing
WE#Write enableActive-low signal initiating write cycle; sampled synchronously with address and byte-select edges
LB#, UB#Byte selectIndependent lower/upper byte write control - permits 8-bit updates within 16-bit word without external logic
VCCPower supplySingle 2.2–3.6 V supply pin; decoupling required within 10 mm per Renesas layout guidelines
VSSGroundReference return path for all I/O and core logic; requires low-inductance connection to PCB ground plane

Key Features

Feature Design Value
Fully static operationNo clock, no refresh, no timing strobes - eliminates timing controller overhead in simple microcontroller systems
Dual chip select for battery backupCS2-driven or CS1#-driven retention modes reduce standby current to ≤10 µA while preserving data during main power loss
Byte-selectable write capabilityLB#/UB# pins allow independent 8-bit writes to upper or lower half of 16-bit word - avoids read-modify-write latency
Low-voltage data retentionMaintains stored data down to 2.0 V VCC - supports seamless transition to backup power sources like supercapacitors
Wide temperature operationSpecified −40°C to +85°C with no parameter derating - suitable for unheated outdoor or under-hood industrial enclosures

Applications

Industrial PLC Data Buffer Medical Device Parameter Storage

Use Scenario: Storing real-time sensor calibration coefficients and runtime configuration in programmable logic controllers deployed in factory automation environments.

IC Role / Device Role / Timing Role: Nonvolatile SRAM buffer holding critical operational parameters during power cycling and brown-out events.

Use Value: 1.5 µW standby current at 3.0 V enables >5-year coin-cell backup life; 70 ns access supports deterministic scan-cycle timing in 10-ms control loops.

Use Scenario: Retaining patient-specific therapy settings and device self-test logs in portable infusion pumps operating on primary lithium batteries.

IC Role / Device Role / Timing Role: Battery-backed memory storing safety-critical configuration data that must survive main power interruption.

Use Value: Dual CS-based retention mode ensures data integrity during battery swaps; 2.0 V data retention threshold aligns with LiMnO₂ discharge curve endpoints.

Automotive Telematics Event Log Test Equipment Configuration Memory

Use Scenario: Capturing CAN bus diagnostic snapshots and GPS timestamps in vehicle black-box recorders subjected to wide ambient temperature swings.

IC Role / Device Role / Timing Role: High-reliability SRAM logging event data during ignition-off periods using vehicle battery or supercapacitor backup.

Use Value: −40°C to +85°C rating matches automotive under-dash thermal profile; 44-pin TSOP II package withstands vibration per AEC-Q200 Class 2.

Use Scenario: Holding instrument-specific calibration offsets and user-defined test sequences in benchtop oscilloscopes and signal generators.

IC Role / Device Role / Timing Role: Fast-access configuration memory enabling instant instrument state recall after power-up.

Use Value: 70 ns access time allows full 16-bit register load in one CPU cycle on ARM9-based controllers; byte-write capability reduces EEPROM wear in frequent update scenarios.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61LV25616AL-70TLI70 ns access, 2.7–3.6 V supply only; no 2.2–2.7 V support; same 44-pin TSOP II footprintLacks low-voltage data retention below 2.7 V - unsuitable for 2.5 V systems or extended brown-out recoverySelect when system operates strictly at 3.3 V and requires higher-speed timing margin verification
AS6C4008-70TIN70 ns access, 2.7–3.6 V supply; 512-kword × 8-bit organization; 32-pin SOJ packageDifferent data bus width and pinout - requires PCB redesign and firmware byte-swapping logicChoose only if 8-bit microcontroller interface is mandatory and board space constraints favor SOJ over TSOP

Compared with IS61LV25616AL-70TLI and AS6C4008-70TIN, the R1LV0416CSB-7LI#D0 uniquely supports 2.2–3.6 V operation with guaranteed 2.0 V data retention and dual-CS battery backup - critical for mixed-voltage industrial systems where supply rail collapse profiles vary across subsystems.

Availability

R1LV0416CSB-7LI#D0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical device parameter storage, and automotive telematics event logging requiring stable component supply across extended product lifecycles.

Supply support for R1LV0416CSB-7LI#D0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LV0416C-I Series was designed specifically for battery-backed, wide-temperature industrial memory applications - emphasizing ultra-low standby power, robust data retention, and compatibility with legacy 16-bit bus architectures.

FAQ

What is the minimum supply voltage required for data retention in R1LV0416CSB-7LI#D0?

The R1LV0416CSB-7LI#D0 maintains stored data down to 2.0 V VCC under specified conditions, including CS2 low or CS1# high with CS2 in valid range. This 2.0 V retention threshold is verified across the full −40°C to +85°C temperature range and enables reliable operation during brown-out events or supercapacitor discharge phases. The R1LV0416CSB-7LI#D0 does not require external refresh or backup power switching circuitry to sustain data at this voltage level.

Does R1LV0416CSB-7LI#D0 support true static operation without clocks or refresh cycles?

Yes, the R1LV0416CSB-7LI#D0 is a fully static RAM with no internal clocks, timers, or refresh circuitry. It retains data indefinitely as long as VCC remains within specification and appropriate chip select conditions are met. The device requires no external timing strobes, making it ideal for simple microcontroller interfaces where deterministic timing and minimal firmware overhead are essential. This behavior is inherent to its 6-transistor CMOS cell design and is confirmed in the "Completely static memory" feature listing on page 1 of the datasheet.

How does the dual chip select (CS1# and CS2) function in R1LV0416CSB-7LI#D0 battery backup mode?

In R1LV0416CSB-7LI#D0 battery backup mode, data retention is activated when either CS2 is driven low, or CS1# is held high while CS2 is within a valid voltage window (0 V ≤ CS2 ≤ 0.2 V or CS2 ≥ VCC − 0.2 V). These two independent entry paths allow flexible system-level power management - for example, CS2 can be tied to a backup regulator enable signal, while CS1# can be controlled by a supervisor IC's reset output. The R1LV0416CSB-7LI#D0 draws ≤10 µA in either retention state at +25°C.

Can R1LV0416CSB-7LI#D0 perform partial-word writes without read-modify-write sequences?

Yes, the R1LV0416CSB-7LI#D0 supports true byte-selectable writes via dedicated LB# (lower byte) and UB# (upper byte) inputs. When LB# is low and UB# is high, only I/O0–I/O7 are written; when UB# is low and LB# is high, only I/O8–I/O15 are written. This eliminates the need for read-modify-write cycles in 8-bit peripheral interfacing or configuration updates, reducing bus traffic and improving system responsiveness. The R1LV0416CSB-7LI#D0 implements this functionality in hardware with no additional timing penalties.

What is the maximum operating temperature range certified for R1LV0416CSB-7LI#D0?

The R1LV0416CSB-7LI#D0 is rated for continuous operation from −40°C to +85°C, with all AC and DC parameters fully specified across this range. This wide temperature grade is explicitly defined in the "Temperature range" feature on page 1 and confirmed in the Absolute Maximum Ratings table on page 5. No derating of access time, current consumption, or voltage thresholds is required within this span, making the R1LV0416CSB-7LI#D0 suitable for deployment in uncontrolled industrial or automotive under-hood environments.

R1LV0416CSB-7LI#D0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
-
Memory Format:
-
Technology:
-
Memory Size:
-
Memory Organization:
-
Memory Interface:
-
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

R1LV0416CSB-7LI#D0 FAQ

1.How can I place an order for R1LV0416CSB-7LI#D0 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1LV0416CSB-7LI#D0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1LV0416CSB-7LI#D0 reliable?

The price and inventory of R1LV0416CSB-7LI#D0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0416CSB-7LI#D0 is usually 5 days.

3.What payment methods are accepted for R1LV0416CSB-7LI#D0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0416CSB-7LI#D0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1LV0416CSB-7LI#D0?

R1LV0416CSB-7LI#D0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1LV0416CSB-7LI#D0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LV0416CSB-7LI#D0?

For technical support, including R1LV0416CSB-7LI#D0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0416CSB-7LI#D0 requirements.

6.How does Aetrix verify that R1LV0416CSB-7LI#D0 is sourced from the original manufacturer or authorized distributors?

All R1LV0416CSB-7LI#D0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0416CSB-7LI#D0 meets industry standards.

7.What is the process for return or replacement of R1LV0416CSB-7LI#D0?

All R1LV0416CSB-7LI#D0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0416CSB-7LI#D0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LV0416CSB-7LI#D0 part is unused and in its original packaging.

Return procedure for R1LV0416CSB-7LI#D0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

R1LV0416CSB-7LI#D0 Tags

  • R1LV0416CSB-7LI#D0
  • R1LV0416CSB-7LI#D0 PDF
  • R1LV0416CSB-7LI#D0 Datasheet
  • R1LV0416CSB-7LI#D0 Specifications
  • R1LV0416CSB-7LI#D0 Images
  • Renesas
  • Renesas R1LV0416CSB-7LI#D0
  • Buy R1LV0416CSB-7LI#D0
  • R1LV0416CSB-7LI#D0 Price
  • R1LV0416CSB-7LI#D0 Distributor
  • R1LV0416CSB-7LI#D0 Supplier
  • R1LV0416CSB-7LI#D0 Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER