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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas R1LV0416CSB-7LI#S0

Name: R1LV0416CSB-7LI#S0
Brand: Renesas
SKU: R1LV0416CSB-7LI#S0
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: R1LV0416CSB-7LI#S0

Manufacturer:: Renesas

Category:: Memory

Package:: 44-TSOP (0.400", 10.16mm Width)

Datasheet:: R1LV0416CSB-7LI#S0.pdf

Description:: IC SRAM 4MBIT PARALLEL 44TSOP II

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Product details

Overview

R1LV0416CSB-7LI#S0 from Renesas is a 4-Mbit static RAM organized as 256-kword × 16-bit, fabricated in CMOS technology with 6-transistor memory cells. It operates from a single 2.2–3.6 V supply, delivers 70 ns max access time, and draws only 1.5 µW typical standby current at 3.0 V - making it ideal for battery-backed industrial controllers and low-power embedded data buffers.

For engineers reviewing the R1LV0416CSB-7LI#S0 datasheet, R1LV0416CSB-7LI#S0 pinout, R1LV0416CSB-7LI#S0 application, or R1LV0416CSB-7LI#S0 equivalent, key selection criteria include its dual chip select architecture for battery backup mode, byte-selectable I/O (UB#/LB#), TSOP II 44-pin package compatibility, and guaranteed −40°C to +85°C operation.

Technical Context

This SRAM implements a fully static architecture requiring no clocks or refresh cycles, with equal read and write cycle times (70 ns). Its control logic supports independent upper- and lower-byte enables (UB#, LB#) and two chip selects (CS1#, CS2) - enabling flexible memory mapping and seamless transition to data retention mode when V_CC drops to 2.0 V.

All I/O pins are three-state compatible, and address/data bus sharing is supported via common I/O0–I/O15 lines. The device uses separate row/column decoders driving a 2,048 × 2,048 memory matrix, with input/output timing referenced to 1.1 V (2.2–2.7 V V_CC) or 1.4 V (2.7–3.6 V V_CC).

Key Specifications

Parameter	Value and Actual Design Meaning
Memory density	4 Mbit (256 kwords × 16 bits) - supports 512 kB of word-accessible storage without external multiplexing
Access time	70 ns max - defines minimum read latency under worst-case voltage/temperature conditions
Supply voltage	2.2 V to 3.6 V - enables direct interface with 2.5 V and 3.0 V logic domains without level shifters
Standby current	1.5 µW typ at 3.0 V - allows multi-year battery backup in systems with <1 µA average system sleep current
Operating temperature	−40°C to +85°C - qualified for industrial-grade deployment in uncontrolled ambient environments
Data retention V_CC	2.0 V min - maintains stored data during brown-out or backup battery operation without external hold-up circuitry
Package	44-pin TSOP II (400-mil) - surface-mount compatible with standard reflow profiles and legacy PCB footprints

Pinout & Package

44-pin plastic TSOP II (400-mil) package with gull-wing leads, JEDEC MO-141AC compliant. Pin 1 marked by notch or dot; top view shown in datasheet Figure 1.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address input	18-bit address bus supporting full 256-kword decoding; no internal address latching required
I/O0–I/O15	Data input/output	Bidirectional 16-bit data bus with three-state output drivers controlled by OE#, UB#, LB#
CS1#, CS2	Chip select inputs	Dual enable scheme: CS1# active-low primary select; CS2 enables battery backup mode when asserted low
OE#, WE#	Output/write enable	OE# controls output buffer Z-state; WE# initiates write cycles - both active-low, asynchronous
UB#, LB#	Byte select	Independent gating of upper (I/O8–I/O15) and lower (I/O0–I/O7) data bytes during read/write
V_CC, V_SS	Power/ground	Single 2.2–3.6 V supply; V_SS pins distributed across package for noise reduction and thermal management

Key Features

Feature	Design Value
Fully static operation	No clock, no refresh, no timing strobes - simplifies controller interface and eliminates dynamic power spikes
Dual chip select for battery backup	CS2 assertion enables ultra-low-power data retention mode at V_CC ≥ 2.0 V, eliminating need for external backup switches
Byte-selectable I/O	UB#/LB# allow partial-word writes and reads - reduces bus contention and supports mixed-width peripheral interfacing
Low active power	6.0 mW/MHz typical at 3.0 V - enables high-speed operation within tight thermal budgets in sealed enclosures
Industrial temperature range	−40°C to +85°C operation verified per AC/DC specs - ensures reliability in factory automation and outdoor telemetry

Applications

Industrial PLC Data Buffer	Medical Device Parameter Storage
Use Scenario: Storing real-time sensor logs and configuration parameters in programmable logic controllers deployed in factory floors with wide ambient swings. IC Role / Device Role / Timing Role: Non-refreshing, word-accessible SRAM providing deterministic 70 ns read/write latency for cyclic data capture. Use Value: Dual CS architecture enables seamless switchover to battery backup during main power loss - preserving critical state without firmware intervention.	Use Scenario: Holding calibration coefficients and patient-specific settings in portable diagnostic equipment powered by rechargeable Li-ion batteries. IC Role / Device Role / Timing Role: Low-leakage 16-bit parallel memory interfaced directly to microcontroller GPIOs for fast parameter recall on boot. Use Value: 1.5 µW standby current extends battery life between charges; 2.0 V data retention threshold matches Li-ion discharge curve endpoints.
Automotive Infotainment Cache	Test & Measurement Instrument RAM
Use Scenario: Caching UI assets and audio metadata in automotive head units where EMI resilience and thermal stability are mandatory. IC Role / Device Role / Timing Role: High-immunity TSOP II-packaged SRAM with robust V_IL/V_IH margins operating across automotive transients. Use Value: Byte-select capability isolates UI graphics updates from audio buffer writes - preventing bus lock during concurrent operations.	Use Scenario: Serving as acquisition buffer in handheld oscilloscopes and signal analyzers requiring deterministic memory access for waveform capture. IC Role / Device Role / Timing Role: Parallel 16-bit interface synchronized to FPGA or ASIC controller for burst-mode sampling at up to 14.3 MHz (70 ns cycle). Use Value: Equal t_RC and t_AA guarantees consistent latency across all address ranges - essential for time-critical trigger response.

Industrial PLC Data Buffer

Medical Device Parameter Storage

Use Scenario: Storing real-time sensor logs and configuration parameters in programmable logic controllers deployed in factory floors with wide ambient swings.

IC Role / Device Role / Timing Role: Non-refreshing, word-accessible SRAM providing deterministic 70 ns read/write latency for cyclic data capture.

Use Value: Dual CS architecture enables seamless switchover to battery backup during main power loss - preserving critical state without firmware intervention.

Use Scenario: Holding calibration coefficients and patient-specific settings in portable diagnostic equipment powered by rechargeable Li-ion batteries.

IC Role / Device Role / Timing Role: Low-leakage 16-bit parallel memory interfaced directly to microcontroller GPIOs for fast parameter recall on boot.

Use Value: 1.5 µW standby current extends battery life between charges; 2.0 V data retention threshold matches Li-ion discharge curve endpoints.

Automotive Infotainment Cache

Test & Measurement Instrument RAM

Use Scenario: Caching UI assets and audio metadata in automotive head units where EMI resilience and thermal stability are mandatory.

IC Role / Device Role / Timing Role: High-immunity TSOP II-packaged SRAM with robust V_IL/V_IH margins operating across automotive transients.

Use Value: Byte-select capability isolates UI graphics updates from audio buffer writes - preventing bus lock during concurrent operations.

Use Scenario: Serving as acquisition buffer in handheld oscilloscopes and signal analyzers requiring deterministic memory access for waveform capture.

IC Role / Device Role / Timing Role: Parallel 16-bit interface synchronized to FPGA or ASIC controller for burst-mode sampling at up to 14.3 MHz (70 ns cycle).

Use Value: Equal t_RC and t_AA guarantees consistent latency across all address ranges - essential for time-critical trigger response.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS61LV25616AL-70TLI	Same density, 70 ns speed, but 3.3 V only (3.0–3.6 V); no 2.5 V support or 2.0 V data retention	Lacks dual-CS battery backup mode and low-voltage retention - unsuitable for true battery-backed designs	Select if system uses fixed 3.3 V rail and does not require brown-out data hold
AS6C4008-70PCN	4 Mbit × 8-bit organization (not ×16); 70 ns speed; 2.7–3.6 V supply; no sub-2.5 V operation	Requires external byte-width adaptation for 16-bit buses; no LB#/UB# support or CS2-controlled retention	Choose only when 8-bit data path suffices and board layout cannot accommodate 16-bit bus routing

Compared with IS61LV25616AL-70TLI and AS6C4008-70PCN, the R1LV0416CSB-7LI#S0 uniquely combines 2.2–3.6 V operation, 2.0 V data retention, and dual chip select - making it the sole option among these three for robust battery backup in mixed-voltage industrial systems.

Availability

R1LV0416CSB-7LI#S0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, portable medical device parameter storage, and automotive infotainment caching requiring stable component supply across extended temperature and long product lifecycles.

Supply support for R1LV0416CSB-7LI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LV0416C-I Series was designed specifically for low-power, wide-temperature static RAM applications where battery backup integrity, voltage flexibility, and byte-selectable access are critical - targeting industrial control, medical instrumentation, and transportation electronics.

FAQ

What is the minimum supply voltage required to retain data in R1LV0416CSB-7LI#S0?

The R1LV0416CSB-7LI#S0 maintains stored data down to 2.0 V V_CC when placed in data retention mode using CS2 low or CS1# high/low thresholds per datasheet page 14. This is verified across the full −40°C to +85°C temperature range and enables reliable operation during brown-out events without external hold-up capacitors. The R1LV0416CSB-7LI#S0 retains data indefinitely at this voltage as long as retention conditions are met.

Does R1LV0416CSB-7LI#S0 support true 16-bit parallel access without external logic?

Yes, the R1LV0416CSB-7LI#S0 provides native 16-bit parallel access via its I/O0–I/O15 pins and 18-bit address bus (A0–A17), requiring no external multiplexing or glue logic. Its byte-select pins (UB# and LB#) allow independent control of upper and lower data bytes, and the device's equal t_AA and t_RC values ensure deterministic timing for both read and write operations across the entire address space.

Can R1LV0416CSB-7LI#S0 be used in a 2.5 V-only system?

Yes, the R1LV0416CSB-7LI#S0 is fully specified for 2.5 V operation: DC characteristics (page 5), AC timing (page 8), and power dissipation (page 2) all include 2.5 V test conditions. At 2.5 V, it delivers 70 ns access time, 1.25 µW typical standby current, and meets all input/output voltage thresholds - making it suitable for 2.5 V core logic systems without level translation.

How does the dual chip select (CS1# and CS2) function in R1LV0416CSB-7LI#S0?

In the R1LV0416CSB-7LI#S0, CS1# serves as the primary chip enable, while CS2 controls entry into low-power data retention mode. When CS2 is driven low, the device enters standby with 1.5 µW typical current draw and retains data even if V_CC drops to 2.0 V. This dual-CS architecture eliminates the need for external power-fail detection circuits and enables automatic, hardware-based backup activation - a key feature distinguishing the R1LV0416CSB-7LI#S0 from standard SRAMs.

Is R1LV0416CSB-7LI#S0 pin-compatible with other 44-pin TSOP II SRAMs?

The R1LV0416CSB-7LI#S0 follows standard 44-pin TSOP II mechanical dimensions and pinout conventions for ×16 SRAMs (e.g., JEDEC MO-141AC), but functional pin assignments - particularly CS2 for battery backup and the specific UB#/LB# behavior - differ from generic SRAMs. While footprint-compatible, direct replacement requires verification of control signal timing and retention mode usage; the R1LV0416CSB-7LI#S0 is not a drop-in substitute for non-Renesas ×16 SRAMs lacking dual-CS support.

R1LV0416CSB-7LI#S0 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 44-TSOP (0.400", 10.16mm Width)

Packaging:: Bulk

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM

Memory Size:: 4Mbit

Memory Organization:: 256K x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 70ns

Access Time:: 70 ns

Voltage - Supply:: 2.2V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 44-TSOP II

R1LV0416CSB-7LI#S0 FAQ

1.How can I place an order for R1LV0416CSB-7LI#S0 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1LV0416CSB-7LI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1LV0416CSB-7LI#S0 reliable?

The price and inventory of R1LV0416CSB-7LI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0416CSB-7LI#S0 is usually 5 days.

3.What payment methods are accepted for R1LV0416CSB-7LI#S0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0416CSB-7LI#S0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1LV0416CSB-7LI#S0?

R1LV0416CSB-7LI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1LV0416CSB-7LI#S0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LV0416CSB-7LI#S0?

For technical support, including R1LV0416CSB-7LI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0416CSB-7LI#S0 requirements.

6.How does Aetrix verify that R1LV0416CSB-7LI#S0 is sourced from the original manufacturer or authorized distributors?

All R1LV0416CSB-7LI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0416CSB-7LI#S0 meets industry standards.

7.What is the process for return or replacement of R1LV0416CSB-7LI#S0?

All R1LV0416CSB-7LI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0416CSB-7LI#S0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LV0416CSB-7LI#S0 part is unused and in its original packaging.

Return procedure for R1LV0416CSB-7LI#S0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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