Renesas R1LV0416DBG-7LI#B0

Overview

R1LV0416DBG-7LI#B0 from Renesas Electronics is a 4-Mbit static RAM organized as 256-kword × 16-bit, fabricated in 0.15 µm CMOS/TFT process. It operates from a single 3.0 V supply (2.7–3.6 V), delivers 70 ns max access time, consumes only 10 µA typical standby current at +25°C, and supports battery backup via dual chip select (CS1#, CS2) - making it suitable for portable instrumentation and industrial data loggers requiring nonvolatile data retention during power loss.

For engineers reviewing the R1LV0416DBG-7LI#B0 datasheet, R1LV0416DBG-7LI#B0 pinout, R1LV0416DBG-7LI#B0 application, or R1LV0416DBG-7LI#B0 equivalent, key selection criteria include its 48-ball fine-pitch CSP package (PTBG0048HB-A), byte-selectable I/O (UB#/LB#), three-state outputs, and low-voltage data retention down to 2.0 V.

Technical Context

This SRAM implements asynchronous parallel interface logic with independent upper/lower byte control, enabling partial-word writes without disturbing adjacent bytes. Its dual chip select architecture allows seamless integration into battery-backed memory subsystems where CS2 activation triggers ultra-low-power retention mode.

The device uses address latching and output enable (OE#) timing to support deterministic read cycles with tOE ≤ 40 ns, and write cycles governed by overlapping CS1#, WE#, and LB#/UB# assertions - all validated across −40°C to +85°C ambient temperature range under 2.7–3.6 V supply.

Key Specifications

Pinout & Package

Package: 48-ball fine-pitch ball grid array (CSP), 0.75 mm ball pitch, PTBG0048HB-A footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61LV25616AL-7TLI and AS6C4008-70ZIN, the R1LV0416DBG-7LI#B0 uniquely integrates dual chip select for autonomous low-power retention and hardware byte enable - reducing system-level complexity and power management firmware burden in battery-critical applications.

Availability

R1LV0416DBG-7LI#B0 is available at Aetrix Electronics and suitable for portable instrumentation, industrial data loggers, medical handhelds, and automotive black box recorders requiring stable component supply and long-term lifecycle support.

Supply support for R1LV0416DBG-7LI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LV0416D Series was designed specifically for low-power, battery-backed memory applications demanding industrial temperature resilience, byte-select efficiency, and ultra-low standby current - targeting portable and mission-critical embedded systems.

FAQ

What is the maximum operating frequency supported by the R1LV0416DBG-7LI#B0?

The R1LV0416DBG-7LI#B0 is an asynchronous SRAM with no internal clock; its speed is defined by access and cycle times rather than frequency. With a 70 ns maximum access time (tAA), it supports effective bus rates up to approximately 14.3 MHz in ideal conditions. Actual throughput depends on system-level timing margins, address/data setup/hold requirements, and controller interface design - all specified in the AC Characteristics table on page 7 of the datasheet.

Does the R1LV0416DBG-7LI#B0 support true 16-bit wide data transfers?

Yes, the R1LV0416DBG-7LI#B0 supports full 16-bit parallel data transfers via its I/O0–I/O15 pins. The device includes independent upper byte (UB#) and lower byte (LB#) controls, allowing simultaneous or selective access to either 8-bit half without requiring read-modify-write sequences. This enables efficient handling of mixed-width data structures in microcontroller-based systems using the R1LV0416DBG-7LI#B0 as primary working memory.

How does the dual chip select (CS1# and CS2) function in the R1LV0416DBG-7LI#B0?

In the R1LV0416DBG-7LI#B0, CS1# enables normal active operation (read/write), while CS2 serves as the dedicated battery backup trigger: when CS2 is asserted low (VIL), the device enters ultra-low-power data retention mode drawing only 10 µA typical current. Both signals can be used together for hierarchical memory control - for example, CS1# gated by processor enable and CS2 tied to backup power rail - enabling fully autonomous retention during main power failure without firmware intervention.

What is the minimum supply voltage required to retain data in the R1LV0416DBG-7LI#B0?

The R1LV0416DBG-7LI#B0 guarantees data retention down to VCC = 2.0 V, as specified in the Low VCC Data Retention Characteristics table (page 13). This applies across the full industrial temperature range (−40°C to +85°C) when entering retention mode via CS2 assertion or other qualifying conditions (e.g., LB#/UB# high with CS2 high and CS1# low). At 2.0 V, typical retention current is 10 µA at +25°C, increasing slightly at elevated temperatures.

Is the R1LV0416DBG-7LI#B0 RoHS compliant and lead-free?

Yes, the R1LV0416DBG-7LI#B0 is RoHS compliant and lead-free. Per Renesas documentation and product marking conventions, the "#B0" suffix denotes lead-free, halogen-free packaging meeting EU RoHS Directive 2011/65/EU requirements. The 48-ball CSP uses matte tin surface finish on solder balls and complies with JEDEC J-STD-020 moisture sensitivity level (MSL) 3 handling guidelines.