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Renesas R1LV0416DBG-7LI#S0

Part No.:
R1LV0416DBG-7LI#S0
Manufacturer:
Renesas
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixR1LV0416DBG-7LI#S0.pdf
Description:
IC SRAM 4MBIT PARALLEL 48TFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,000

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Product details

Overview

R1LV0416DBG-7LI#S0 from Renesas Electronics is a 4-Mbit static RAM organized as 256-kword × 16-bit, fabricated in 0.15 µm CMOS/TFT process, operating from a single 3.0 V supply (2.7–3.6 V), with 70 ns max access time and −40 to +85°C industrial temperature range - used for nonvolatile data retention in battery-backed embedded controllers and real-time data buffers.

For engineers reviewing the R1LV0416DBG-7LI#S0 datasheet, R1LV0416DBG-7LI#S0 pinout, R1LV0416DBG-7LI#S0 application, or R1LV0416DBG-7LI#S0 equivalent, this page delivers verified package mapping (48-ball CSP, PTBG0048HB-A), byte-selectable I/O architecture, low-power standby operation (10 µA typ at +25°C), and battery backup mode support via dual chip select control.

Technical Context

The R1LV0416DBG-7LI#S0 implements a 2,048 × 2,048 memory matrix with full row/column decoding, supporting independent upper/lower byte access via UB#/LB# control and three-state bidirectional I/Os (I/O0–I/O15). Its control logic enables simultaneous CS1#/CS2-driven standby entry and data retention mode activation at VCC ≥ 2.0 V.

It features common data I/O with output enable (OE#) and write enable (WE#) synchronized to address and chip select transitions, ensuring deterministic read/write timing under varying VCC (2.7–3.6 V) and temperature (−40 to +85°C). Standby current scales with ambient temperature: 10 µA typ at +25°C, 1 µA typ at +85°C.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density4 Mbit (256 kwords × 16 bits) - supports 512 kB of word-accessible SRAM in compact footprint
Access Time70 ns max - defines minimum cycle time for reliable read/write in high-speed microcontroller interfaces
Supply Voltage2.7 V to 3.6 V - compatible with 3.3 V system rails and tolerant of brown-out conditions down to 2.0 V for data retention
Standby Current10 µA typ at +25°C - enables multi-year battery backup in portable instrumentation and metering systems
Operating Temperature−40°C to +85°C - qualified for industrial-grade embedded applications without derating
Data Retention Voltage2.0 V min - maintains stored data during power loss when VCC drops below operational threshold
Package Type48-ball fine-pitch BGA (PTBG0048HB-A, 0.75 mm pitch) - surface-mount compatible with automated PCB assembly

Pinout & Package

Package: 48-ball fine-pitch ball grid array (CSP), PTBG0048HB-A, 0.75 mm ball pitch, top-side marking includes R1LV0416DBG-7LI#S0 and lot code.

Pin/Terminal Circuit Role Design Meaning
A0–A17Address input18-bit address bus selecting one of 256k words; A0–A17 fully decoded for direct linear addressing
I/O0–I/O7Data I/O (lower byte)Bidirectional 8-bit data path enabled by LB#; three-state when LB# or OE# inactive
I/O8–I/O15Data I/O (upper byte)Bidirectional 8-bit data path enabled by UB#; independent control allows byte-level writes without masking
CS1#, CS2Chip select inputsDual active-low selects: CS1# primary enable; CS2 secondary for standby/retention mode entry
OE#, WE#Output and write enableOE# controls output drivers only; WE# gates write cycles - both referenced to VIH/VIL thresholds (2.2 V / 0.6 V)
UB#, LB#Byte select controlsIndependent upper/lower byte gating - enables 8-bit partial writes while preserving other byte contents
VCC, VSSPower and groundSingle 3.3 V supply domain; decoupling required per Renesas layout guidelines due to fast switching currents
NCNo connectionThree unconnected balls (A1, D1, F6) - must be left floating or grounded per PCB design rules; not internally bonded

Key Features

Feature Design Value
Single-supply 3.0 V operationEliminates need for dual-voltage regulators; simplifies power design in space-constrained IoT edge nodes
70 ns access with equal tRC/tAAEnables deterministic timing in synchronous bus interfaces without cycle stretching or wait states
10 µA standby current at +25°CSupports >5-year battery life in coin-cell–powered devices such as smart sensors and utility meters
Dual chip select for battery backupCS2-driven retention mode reduces leakage to sub-µA levels while preserving data during main power loss
Byte-selectable I/O architectureReduces bus contention and EMI in mixed-width systems; avoids full-word read-modify-write overhead
Industrial temperature rangeValidated operation across full −40°C to +85°C without thermal derating - suitable for automotive under-hood and factory automation

Applications

Industrial Data Logger Medical Diagnostic Monitor

Use Scenario: Continuous acquisition of sensor data (ECG, SpO₂, temperature) with local buffering before wireless upload.

IC Role / Device Role / Timing Role: High-reliability SRAM buffer holding up to 256k samples prior to transmission; retains data during brief power interruptions.

Use Value: 10 µA standby current extends backup battery life beyond 3 years; 70 ns access enables real-time sampling at ≥10 kSPS without CPU intervention.

Use Scenario: Temporary storage of waveform snapshots and calibration coefficients in portable ultrasound or patient monitors.

IC Role / Device Role / Timing Role: Nonvolatile cache for critical runtime parameters; operates in battery backup mode during AC power loss.

Use Value: Dual CS control (CS1#/CS2) ensures seamless transition to data retention at VCC = 2.0 V; 48-ball CSP fits tight PCB layouts near analog front-end ICs.

Smart Energy Meter Programmable Logic Controller (PLC) I/O Module

Use Scenario: Storing tariff schedules, event logs, and tamper-detection timestamps in DIN-rail mounted electricity meters.

IC Role / Device Role / Timing Role: Battery-backed SRAM maintaining integrity of billing-critical data across mains outages and firmware updates.

Use Value: −40°C to +85°C rating ensures reliability in outdoor enclosures; 2.0 V data retention voltage tolerates deep brownouts without data loss.

Use Scenario: Local configuration storage and cyclic process data buffering in modular PLC backplanes with hot-swap capability.

IC Role / Device Role / Timing Role: Fast-access scratchpad memory for ladder logic execution and I/O state shadowing; accessed via parallel bus from ARM Cortex-M7 host.

Use Value: 70 ns tAA enables zero-wait-state operation at 14 MHz bus clock; byte-select pins simplify integration with 8-bit peripheral registers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61LV25616AL-7TLISame density (256k × 16), 70 ns access, but 44-pin TSOP-II package (not BGA); higher ISB (20 µA typ)Larger footprint; less suitable for ultra-compact designs; no fine-pitch BGA assembly compatibilitySelect when board space permits TSOP and legacy reflow profiles are used
AS6C4008-70TIN4-Mbit × 8-bit organization (not ×16); 70 ns access; 32-pin SOP; 15 µA ISB typRequires external byte multiplexing for 16-bit interface; incompatible pinout and data widthChoose only if system uses 8-bit data bus or requires SOP packaging for manual repair

Compared with IS61LV25616AL-7TLI and AS6C4008-70TIN, the R1LV0416DBG-7LI#S0 provides superior space efficiency via 48-ball CSP, lower standby current for extended battery life, and native 16-bit interface eliminating glue logic - making it optimal for next-generation compact industrial and medical electronics.

Availability

R1LV0416DBG-7LI#S0 is available at Aetrix Electronics and suitable for industrial data loggers, medical diagnostic monitors, smart energy meters, and programmable logic controller I/O modules requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for R1LV0416DBG-7LI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LV0416D Series was designed specifically for low-power, battery-backed SRAM applications in space-constrained embedded systems - emphasizing data retention integrity, wide temperature operation, and minimal standby current without sacrificing speed.

FAQ

What is the maximum operating frequency supported by R1LV0416DBG-7LI#S0?

The R1LV0416DBG-7LI#S0 does not specify a clock frequency because it is an asynchronous SRAM. Its performance is defined by access time (70 ns max) and cycle time (70 ns max), enabling reliable operation with bus clocks up to ~14 MHz in systems where address/data setup/hold times are met. The R1LV0416DBG-7LI#S0 achieves this using standard control signals (CS1#, WE#, OE#, UB#, LB#) without internal clocking.

Does R1LV0416DBG-7LI#S0 support true 16-bit parallel data access?

Yes, the R1LV0416DBG-7LI#S0 natively supports full 16-bit parallel access via I/O0–I/O15. Unlike ×8 devices requiring external multiplexing, this SRAM delivers true word-wide reads/writes. Upper and lower bytes can also be accessed independently using UB# and LB# - allowing efficient 8-bit operations without disturbing adjacent data.

How does R1LV0416DBG-7LI#S0 enter battery backup mode?

The R1LV0416DBG-7LI#S0 enters battery backup (data retention) mode when either CS2 is driven low (≤0.2 V), or CS1# is held high (≥VCC − 0.2 V) while CS2 is high, or both UB# and LB# are high while CS2 is high and CS1# is low. In this state, current drops to ≤10 µA at +25°C, preserving data down to VCC = 2.0 V - confirmed in the Low VCC Data Retention Characteristics section of the datasheet.

Is R1LV0416DBG-7LI#S0 pin-compatible with other devices in the R1LV0416D Series?

No - R1LV0416DBG-7LI#S0 uses a 48-ball CSP package (PTBG0048HB-A), while R1LV0416DSB-7LI uses a 44-pin TSOP-II (PTSB0044GA-A). Pin functions are identical across the series, but physical layout, ball/pad count, and pitch differ. Direct PCB replacement requires redesign; however, logic-level interface behavior remains consistent for software and timing validation.

What is the meaning of the "#S0" suffix in R1LV0416DBG-7LI#S0?

The "#S0" suffix in R1LV0416DBG-7LI#S0 denotes Renesas's standard tape-and-reel packaging option: 1,000 units per reel, 12 mm tape width, and EIA-481-D compliant carrier. It indicates factory-standard shipping configuration - not a functional variant. All electrical, thermal, and timing specifications match the base R1LV0416DBG-7LI part number as defined in Rev.1.00 of the datasheet.

R1LV0416DBG-7LI#S0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
48-TFBGA
Packaging:
Bulk
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
70ns
Access Time:
70 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-TFBGA (7.5x8.5)

R1LV0416DBG-7LI#S0 FAQ

1.How can I place an order for R1LV0416DBG-7LI#S0 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1LV0416DBG-7LI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1LV0416DBG-7LI#S0 reliable?

The price and inventory of R1LV0416DBG-7LI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0416DBG-7LI#S0 is usually 5 days.

3.What payment methods are accepted for R1LV0416DBG-7LI#S0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0416DBG-7LI#S0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1LV0416DBG-7LI#S0?

R1LV0416DBG-7LI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1LV0416DBG-7LI#S0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LV0416DBG-7LI#S0?

For technical support, including R1LV0416DBG-7LI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0416DBG-7LI#S0 requirements.

6.How does Aetrix verify that R1LV0416DBG-7LI#S0 is sourced from the original manufacturer or authorized distributors?

All R1LV0416DBG-7LI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0416DBG-7LI#S0 meets industry standards.

7.What is the process for return or replacement of R1LV0416DBG-7LI#S0?

All R1LV0416DBG-7LI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0416DBG-7LI#S0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LV0416DBG-7LI#S0 part is unused and in its original packaging.

Return procedure for R1LV0416DBG-7LI#S0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

R1LV0416DBG-7LI#S0 Tags

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