Renesas R1LV0416DSB-7LI#B0

Overview

R1LV0416DSB-7LI#B0 from Renesas Electronics is a 4-Mbit static RAM organized as 256-kword × 16-bit, fabricated in 0.15 µm CMOS/TFT process. It operates from a single 3.0 V supply (2.7–3.6 V), delivers 70 ns max access time, consumes only 10 µA typical standby current at +25°C, and supports battery backup via dual chip select (CS1#, CS2) - ideal for portable instrumentation and industrial control data buffers.

For engineers reviewing the R1LV0416DSB-7LI#B0 datasheet, R1LV0416DSB-7LI#B0 pinout, R1LV0416DSB-7LI#B0 application, or R1LV0416DSB-7LI#B0 equivalent, key selection criteria include TSOP II package compatibility, byte-selectable I/O (UB#/LB#), low-voltage data retention down to 2.0 V, and guaranteed operation across −40°C to +85°C industrial temperature range.

Technical Context

The R1LV0416DSB-7LI#B0 implements a full static memory architecture with independent upper/lower byte control, enabling partial writes without disturbing adjacent data. Its dual chip select (CS1#, CS2) supports hierarchical memory mapping and battery-backed retention modes where data persists at VCC ≥ 2.0 V with ICCDR ≤ 10 µA at +25°C.

Timing is fully synchronous to address and control transitions: tAA = 70 ns max, tOE = 40 ns max, tWC = 70 ns max, and all access/cycle times are equal. Output drivers provide three-state I/O with VOH ≥ 2.4 V (IOH = −1 mA) and VOL ≤ 0.4 V (IOL = 2 mA), ensuring robust interfacing with 3.3 V logic families.

Key Specifications

Pinout & Package

Package: 44-pin thin small outline package (TSOP II), 400-mil body width, lead pitch 0.8 mm - surface-mount compatible with standard reflow profiles and automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61LV25616AL-7TLI and AS6C4008-70TIN, the R1LV0416DSB-7LI#B0 uniquely integrates dual chip select for hardware-triggered battery retention and native byte-select pins - reducing BOM count and eliminating timing-critical external decode logic in portable and safety-critical systems.

Availability

R1LV0416DSB-7LI#B0 is available at Aetrix Electronics and suitable for portable instrumentation, industrial PLC I/O modules, and medical diagnostic handhelds requiring stable component supply across extended product lifecycles.

Supply support for R1LV0416DSB-7LI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.

The R1LV0416D Series was designed specifically for low-power, battery-backed SRAM applications in space-constrained industrial and portable equipment - emphasizing ultra-low standby current, wide temperature operation, and simplified byte-level data handling.

FAQ

What is the maximum operating frequency supported by the R1LV0416DSB-7LI#B0?

The R1LV0416DSB-7LI#B0 does not operate on a clock signal - it is an asynchronous SRAM. Its performance is defined by access and cycle times: maximum address access time (tAA) is 70 ns, and maximum read/write cycle time (tRC/tWC) is also 70 ns. This corresponds to an effective maximum interface rate of approximately 14.3 MHz under worst-case timing conditions.

Does the R1LV0416DSB-7LI#B0 support true battery backup mode, and how is it activated?

Yes, the R1LV0416DSB-7LI#B0 supports hardware-activated battery backup. It enters data retention mode when either CS2 is driven low (≤ 0.2 V), or CS1# is held high (≥ VCC − 0.2 V) while CS2 is high, or both LB# and UB# are high while CS2 is high and CS1# is low. In this mode, data is retained at VCC ≥ 2.0 V with ICCDR ≤ 10 µA at +25°C.

What is the meaning of the "#B0" suffix in R1LV0416DSB-7LI#B0?

The "#B0" suffix denotes the tape-and-reel packaging option per Renesas standard ordering nomenclature: "#B0" indicates 1,000-piece reel quantity in antistatic carrier tape, compliant with EIA-481-D standards. It does not indicate a revision or functional variant - the electrical and timing specifications match the base R1LV0416DSB-7LI part.

Can the R1LV0416DSB-7LI#B0 be used with 2.5 V logic interfaces?

No - the R1LV0416DSB-7LI#B0 requires a minimum VCC of 2.7 V and is not rated for 2.5 V operation. Input thresholds are specified relative to VCC (VIH ≥ 2.2 V, VIL ≤ 0.6 V), and DC characteristics including output drive strength and leakage are guaranteed only within 2.7–3.6 V. Interfacing with 2.5 V systems requires level translation.

Is the R1LV0416DSB-7LI#B0 RoHS compliant and lead-free?

Yes, the R1LV0416DSB-7LI#B0 is RoHS compliant and lead-free. Per Renesas documentation (Rev.1.00, May 2007) and subsequent product change notices, this device uses lead-free TSOP II packaging with matte tin terminations and conforms to EU Directive 2011/65/EU. Full compliance documentation is available through Renesas's environmental portal.