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Renesas R1LV0808ASB-5SI#B0
- Part No.:
- R1LV0808ASB-5SI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
R1LV0808ASB-5SI#B0.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:1,488
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Product details
Overview
R1LV0808ASB-5SI from Renesas Electronics is an 8Mb low-power static RAM (1,048,576 × 8-bit), fabricated in 0.15µm CMOS/TFT process, operating from a single 2.4–3.6V supply with 55ns access time and 1.2µA standby current at 3.0V, used for battery-backed memory in portable instrumentation and industrial control modules.
For engineers reviewing the R1LV0808ASB-5SI datasheet, R1LV0808ASB-5SI pinout, R1LV0808ASB-5SI application, or R1LV0808ASB-5SI equivalent, key selection criteria include TTL-compatible I/O, dual chip select architecture (CS1#/CS2), no-refresh operation, and TSOP (II) package compatibility for space-constrained PCB layouts.
Technical Context
This LPSRAM implements asynchronous parallel interface logic with independent address buffer, column/row decoders, and sense/write amplifiers - all powered by a single rail. Its dual chip select (CS1# active-low, CS2 active-high) enables flexible memory banking and seamless expansion without external logic.
Operation requires no clocks or refresh cycles; data retention is maintained down to 1.5V VCC with dedicated retention modes controlled via CS1# or CS2. All inputs and outputs meet TTL voltage thresholds across -40°C to +85°C ambient range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 8 Mbit (1,048,576 words × 8 bits) - supports byte-wide data bus interfacing without multiplexing |
| Access time | 55 ns - guarantees read data valid within 55 ns of address/CS1#/OE# setup, enabling 18.2 MHz max burst rate |
| Supply voltage | 2.4–3.6 V - compatible with 2.5V and 3.3V system rails; no level-shifting required |
| Standby current | 1.2 µA at 3.0 V, 25°C - enables multi-year battery backup in always-on monitoring systems |
| Operating temperature | -40°C to +85°C - qualified for industrial-grade embedded applications without derating |
| I/O interface | TTL-compatible inputs/outputs - directly interfaces with legacy microcontrollers and FPGAs without bus buffers |
| Data retention VCC | 1.5–3.6 V - maintains stored data during brown-out or backup power switchover |
Pinout & Package
Package: 44-pin plastic TSOP (II), 11.76 mm × 18.41 mm, normal-bend type (44P3F).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address input | 20-bit address bus supporting full 1M-word decoding; no address multiplexing required |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus with three-state output control via OE# and CS# |
| CS1# | Chip select 1 | Active-low primary enable; must be low with CS2 high for read/write access |
| CS2 | Chip select 2 | Active-high secondary enable; controls address/data buffers and enables retention mode when low |
| WE# | Write enable | Active-low write strobe; latches DQ data on falling edge when CS1# = L and CS2 = H |
| OE# | Output enable | Active-low gate for DQ outputs; prevents bus contention during shared-memory arbitration |
| VCC / VSS | Power / Ground | Single 2.4–3.6V supply; two VCC and two VSS pins reduce IR drop and improve noise immunity |
| NC | No connection | Pins 7, 8, 16, 17, 28, 29, 37, 38 - must remain unconnected per design; no internal bonding |
Key Features
| Feature | Design Value |
|---|---|
| No clock, no refresh | Eliminates timing controller overhead and reduces firmware complexity in microcontroller-based systems |
| OR-tie capable outputs | Three-state DQ lines allow direct wire-OR connection of multiple devices on same data bus |
| Dual chip select (CS1#/CS2) | Enables hierarchical memory mapping and selective device isolation without external logic gates |
| Battery backup support | Valid data retention down to 1.5V VCC with sub-µA current draw extends backup runtime significantly |
| TTL-compatible I/O | Direct interface with 5V-tolerant or 3.3V microcontrollers without level translators or pull-up resistors |
Applications
| Portable Medical Monitors | Industrial PLC Data Loggers |
|---|---|
Use Scenario: Continuous ECG waveform capture and local storage during battery-only operation between USB charging cycles. IC Role / Device Role / Timing Role: Non-volatile data buffer holding up to 1M samples before host transfer; retains data during power interruption. Use Value: 1.2µA standby current enables >2 years of battery life in sleep mode; 55ns access supports real-time display buffering. | Use Scenario: Storing sensor history and alarm timestamps in DIN-rail mounted controllers deployed in remote substations. IC Role / Device Role / Timing Role: Primary working memory for cyclic data acquisition and timestamped event logging. Use Value: -40°C to +85°C rating ensures reliability in unconditioned enclosures; dual CS allows modular memory expansion. |
| Automotive Diagnostic Tools | Network Edge Routers (Control Plane) |
Use Scenario: Caching OBD-II fault codes and live PID streams during vehicle ignition-off periods. IC Role / Device Role / Timing Role: Battery-backed SRAM preserving diagnostic context across ignition cycles without EEPROM wear. Use Value: Data retention at 1.5V VCC matches automotive battery brown-out profiles; no refresh extends MCU sleep duration. | Use Scenario: Holding routing table metadata and configuration snapshots in fanless, convection-cooled edge nodes. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for control-plane packet classification engines. Use Value: 55ns access time meets deterministic latency targets; TSOP (II) footprint simplifies thermal pad layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 16-bit bus (256K × 16), 10ns access, 3.3V only, 48-pin TSOPII | Higher bandwidth but wider data path; requires PCB redesign and bus-width adaptation | Select if 16-bit microcontroller interface and faster access are prioritized over pin compatibility |
| AS6C4008-55ZIN | 8-bit bus, 55ns access, 2.7–3.6V, 32-pin SOJ - smaller package, no CS2 pin | Lacks dual chip select; limited expansion flexibility and no CS2-controlled retention mode | Choose for cost-sensitive, space-constrained designs where memory banking is not required |
Compared with IS61LV25616AL-10TLI and AS6C4008-55ZIN, the R1LV0808ASB-5SI uniquely combines 8-bit simplicity, dual-CS expandability, and sub-µA retention - making it optimal for incremental memory upgrades in legacy 8-bit industrial platforms.
Availability
R1LV0808ASB-5SI is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data loggers, automotive diagnostic tools, and network edge routers requiring stable component supply across extended product lifecycles.
Supply support for R1LV0808ASB-5SI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV0808ASB series belongs to Renesas' Advanced LPSRAM product line, engineered specifically for ultra-low-power, battery-backed memory applications where zero-refresh operation and wide supply tolerance are critical.
FAQ
What is the minimum supply voltage required for data retention in R1LV0808ASB-5SI?
The R1LV0808ASB-5SI maintains data integrity down to 1.5V VCC in retention mode, whether triggered by CS1# ≥ VCC−0.2V or CS2 ≤ 0.2V. This specification is verified per the DC Characteristics table on page 13 of the REJ03C0394-0100 datasheet and supports long-term backup using coin-cell batteries or supercapacitors.
Does R1LV0808ASB-5SI require external refresh circuitry?
No, the R1LV0808ASB-5SI is a true static RAM and requires no refresh cycles or external timing control. Its internal latch-based memory cells retain data as long as power is applied above 1.5V, eliminating refresh overhead in firmware and reducing system-level timing constraints.
Can R1LV0808ASB-5SI be used with a 5V microcontroller interface?
The R1LV0808ASB-5SI has TTL-compatible inputs (VIH = 2.2V min, VIL = 0.4V max) and outputs (VOH = 2.4V min at IOH = −1mA), so it can interface directly with 5V microcontrollers only if their outputs are 3.3V-tolerant or use open-drain/pull-up configurations. Direct 5V drive risks violating absolute maximum ratings and is not recommended without level translation.
What is the function of the NC pins on R1LV0808ASB-5SI?
The NC pins (7, 8, 16, 17, 28, 29, 37, 38) on the R1LV0808ASB-5SI are unconnected internally and must remain floating - no traces, vias, or solder should contact them. These positions accommodate die variants and ensure mechanical compatibility across the R1LV0808ASB family; connecting them may cause unpredictable behavior or damage.
How does the dual chip select (CS1# and CS2) improve memory system design with R1LV0808ASB-5SI?
The dual chip select architecture of the R1LV0808ASB-5SI enables hierarchical memory mapping: CS1# acts as primary enable while CS2 provides secondary gating and retention control. This allows seamless expansion across multiple devices using simple logic, selective power-down of unused banks, and deterministic entry into low-current data retention - all without external decode logic.
R1LV0808ASB-5SI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 8Mbit
- Memory Organization:
- 1M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
R1LV0808ASB-5SI#B0 FAQ
1.How can I place an order for R1LV0808ASB-5SI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0808ASB-5SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0808ASB-5SI#B0 reliable?
The price and inventory of R1LV0808ASB-5SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0808ASB-5SI#B0 is usually 5 days.
3.What payment methods are accepted for R1LV0808ASB-5SI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0808ASB-5SI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0808ASB-5SI#B0?
R1LV0808ASB-5SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0808ASB-5SI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0808ASB-5SI#B0?
For technical support, including R1LV0808ASB-5SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0808ASB-5SI#B0 requirements.
6.How does Aetrix verify that R1LV0808ASB-5SI#B0 is sourced from the original manufacturer or authorized distributors?
All R1LV0808ASB-5SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0808ASB-5SI#B0 meets industry standards.
7.What is the process for return or replacement of R1LV0808ASB-5SI#B0?
All R1LV0808ASB-5SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0808ASB-5SI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0808ASB-5SI#B0 part is unused and in its original packaging.
Return procedure for R1LV0808ASB-5SI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV0808ASB-5SI#B0 Tags
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