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Renesas R1LV0808ASB-5SI#S0

Part No.:
R1LV0808ASB-5SI#S0
Manufacturer:
Renesas
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixR1LV0808ASB-5SI#S0.pdf
Description:
IC SRAM 8MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,431

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Product details

Overview

R1LV0808ASB-5SI from Renesas Electronics is an 8Mb low-power static RAM (1,048,576 × 8-bit) fabricated in 0.15µm CMOS/TFT technology, operating from a single 2.4–3.6V supply with 55ns access time and -40°C to +85°C industrial temperature range. It serves as non-volatile data buffer or working memory in battery-backed systems requiring zero-refresh operation and TTL-compatible interfacing.

For engineers reviewing the R1LV0808ASB-5SI datasheet, R1LV0808ASB-5SI pinout, R1LV0808ASB-5SI application, or R1LV0808ASB-5SI equivalent, key selection criteria include standby current (1.2µA typ. at 3.0V), TSOP(II) 44-pin package footprint, dual chip select architecture (CS1#/CS2), common I/O bus, and data retention capability down to 1.5V VCC.

Technical Context

This LPSRAM uses asynchronous static cell architecture with no internal clocks or refresh circuitry, enabling deterministic read/write timing controlled solely by CS1#, CS2, WE#, and OE# signals. Its dual chip select (CS1# active-low, CS2 active-high) supports flexible memory expansion and hierarchical addressing in multi-chip configurations.

The device implements three-state bidirectional DQ0–DQ7 I/Os with OR-tie capability, and features separate output enable (OE#) to prevent bus contention during shared-bus operation. Standby mode is entered when CS2 is low or CS1# is high while CS2 is high, reducing current to ≤4µA at +40°C.

Key Specifications

ParameterValue and Actual Design Meaning
Memory size8 Mbit (1,048,576 words × 8 bits) - provides byte-wide data path for microcontroller peripherals and DSP buffers
Access time55 ns - enables direct interface with 16–20 MHz bus systems without wait states
Supply voltage2.4–3.6 V - compatible with 2.5V and 3.3V logic domains; supports battery backup down to 1.5V for data retention
Standby current1.2 µA typ. at 3.0V, +25°C - extends battery life in always-on embedded systems
Operating temperature-40°C to +85°C - qualified for industrial-grade deployment in harsh environments
I/O compatibilityTTL input thresholds and output drive (VOH ≥2.4V @ -1mA, VOL ≤0.4V @ 2mA) - ensures interoperability with legacy 5V-tolerant controllers via level-shifting or direct connection
Data retention VCC1.5–3.6 V - maintains stored data during brown-out or backup power modes without external capacitor hold-up

Pinout & Package

Package: 44-pin plastic TSOP (II), 11.76 mm × 18.41 mm, normal-bend type (44P3F), surface-mount compatible with standard reflow profiles.

Pin/TerminalCircuit RoleDesign Meaning
A0–A19Address inputs20-bit address bus supporting full 1M-word decoding; no multiplexing required
DQ0–DQ7Bi-directional data I/OCommon bus interface with three-state control; supports OR-tie for wired-AND expansion
CS1#Chip select 1 (active-low)Primary enable; must be low with CS2 high for valid read/write cycles
CS2Chip select 2 (active-high)Secondary enable; controls address/data buffers and entry into data retention mode
WE#Write enable (active-low)Initiates write on falling edge; overlaps with CS1# and CS2 to define write window
OE#Output enable (active-low)Gates DQ outputs to high-impedance state independently of CS/WE, preventing bus contention
VCC / VSSPower / GroundSingle-supply operation; decoupling recommended per JEDEC TSOP(II) layout guidelines
NCNo connectPins 7, 8, 16, 17, 30, 31, 37, 38 - must remain unconnected; no internal bonding

Key Features

FeatureDesign Value
No refresh requiredEliminates system-level refresh overhead and timing constraints-ideal for ultra-low-power MCU sleep modes
Dual chip select (CS1#/CS2)Enables seamless memory banking and hierarchical decoding without external logic or glue ICs
1.2 µA standby current (typ.)Reduces quiescent power in always-on telemetry nodes and real-time clock backup circuits
Data retention at 1.5V VCCPreserves contents during extended power loss using minimal backup capacitance or coin-cell support
TTL-compatible I/ODirect interface with legacy 8051, Z80, and ARM7-based controllers without level translation

Applications

Industrial Data LoggerMedical Patient Monitor Buffer

Use Scenario: Continuous acquisition of sensor data (ECG, SpO₂, temperature) with periodic flash storage and real-time display.

IC Role / Device Role / Timing Role: High-speed, low-power working memory for waveform buffering and preprocessing prior to compression or transmission.

Use Value: 55ns access time enables real-time sampling at ≥10 kSPS; 1.2µA standby current extends battery runtime between charges.

Use Scenario: Temporary storage of vital sign history during power interruption or battery switchover in portable monitors.

IC Role / Device Role / Timing Role: Battery-backed SRAM holding critical patient records and calibration tables during main power loss.

Use Value: Data retention down to 1.5V VCC allows use with small backup capacitors; -40°C to +85°C rating ensures reliability across clinical environments.

Automotive Telematics ECUPOS Terminal Transaction Cache

Use Scenario: Storing GPS position logs, CAN message buffers, and firmware update staging in vehicle infotainment modules.

IC Role / Device Role / Timing Role: Non-volatile scratchpad memory supporting fail-safe logging and over-the-air update rollback.

Use Value: Dual CS architecture simplifies integration with multi-master buses; industrial temp range accommodates under-dash mounting.

Use Scenario: Caching transaction receipts, encryption keys, and audit trails in retail point-of-sale terminals with intermittent AC power.

IC Role / Device Role / Timing Role: Secure, fast-access memory for cryptographic operations and offline transaction queuing.

Use Value: TTL compatibility ensures plug-and-play with legacy 8-bit microcontrollers; 44-pin TSOP(II) footprint fits compact PCB layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61LV25616AL-10TLI16-bit bus (256K × 16), 10ns access, 3.3V only, 48-pin TSOPIIHigher bandwidth but wider data path; requires PCB redesign and bus-width adaptationSelect when 16-bit microcontroller interface or faster timing is required; not drop-in compatible
CY62167EV30LL-45ZSXIT16Mb (1M × 16), 45ns access, 2.2–3.6V, 48-pin TSOPDouble density and lower VCC min; different pinout and CS logic (single CS#)Choose for higher capacity needs where board space permits 48-pin footprint and logic redesign

Compared with IS61LV25616AL-10TLI and CY62167EV30LL-45ZSXIT, the R1LV0808ASB-5SI offers optimal balance of 8Mb density, 55ns speed, ultra-low standby current, and 44-pin TSOP(II) compatibility-making it the preferred choice for space-constrained, battery-sensitive industrial and medical designs requiring proven long-term availability.

Availability

R1LV0808ASB-5SI is available at Aetrix Electronics and suitable for industrial data loggers, medical patient monitors, automotive telematics ECUs, and POS terminal transaction caches requiring stable component supply and long-lifecycle support.

Supply support for R1LV0808ASB-5SI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for industrial, automotive, and enterprise applications.

The R1LV0808ASB-5SI belongs to Renesas' Advanced LPSRAM product line, designed specifically for ultra-low-power, battery-operated, and battery-backup memory applications where zero-refresh operation and wide VCC tolerance are essential.

FAQ

What is the minimum supply voltage required for data retention in the R1LV0808ASB-5SI?

The R1LV0808ASB-5SI guarantees data retention down to 1.5V VCC under specified conditions: either CS2 held at 0–0.2V or CS1# held ≥ VCC−0.2V with CS2 ≥ VCC−0.2V. This enables reliable operation during brown-out events using small backup capacitors or coin cells, and is confirmed in the Data Retention Characteristics table on page 13 of the REJ03C0394-0100 datasheet.

Does the R1LV0808ASB-5SI require a clock signal or refresh cycle?

No, the R1LV0808ASB-5SI is a true static RAM with no internal clock and zero refresh requirement. All operations are fully asynchronous and controlled solely by CS1#, CS2, WE#, and OE# timing. This eliminates refresh overhead, simplifies firmware design, and reduces system power-key advantages confirmed in the Description and Features sections of the official Renesas datasheet.

What is the function of the NC pins on the R1LV0808ASB-5SI?

The R1LV0808ASB-5SI has eight NC (No Connect) pins: 7, 8, 16, 17, 30, 31, 37, and 38. These pins are not bonded internally and must remain unconnected on the PCB. Per the Pin Description table (page 3), routing traces or applying solder to NC pins may cause electrical interference or mechanical stress; they serve only as structural placeholders in the 44-pin TSOP(II) package.

Can the R1LV0808ASB-5SI be used with a 2.5V-only system?

Yes, the R1LV0808ASB-5SI operates across 2.4–3.6V, making it fully compatible with 2.5V systems. Input thresholds (VIH = 2.2V min, VIL = 0.4V max at VCC = 2.4–2.7V) and output drive (VOH ≥2.0V @ -0.1mA) ensure robust noise margins. DC and AC characteristics-including 55ns access time and 1.2µA standby-are validated across this range, as specified in the Recommended Operating Conditions and AC Characteristics tables.

How does the dual chip select (CS1# and CS2) architecture improve memory expansion in the R1LV0808ASB-5SI?

The R1LV0808ASB-5SI's CS1# (active-low) and CS2 (active-high) allow hierarchical memory mapping: CS2 selects memory banks while CS1# enables individual devices within each bank. This eliminates external address decoders for up to four devices, simplifies PCB routing, and supports OR-tie expansion via shared DQ lines-details confirmed in the Features section and Operation Table (page 5) of the datasheet.

R1LV0808ASB-5SI#S0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM
Memory Size:
8Mbit
Memory Organization:
1M x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

R1LV0808ASB-5SI#S0 FAQ

1.How can I place an order for R1LV0808ASB-5SI#S0 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1LV0808ASB-5SI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1LV0808ASB-5SI#S0 reliable?

The price and inventory of R1LV0808ASB-5SI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0808ASB-5SI#S0 is usually 5 days.

3.What payment methods are accepted for R1LV0808ASB-5SI#S0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0808ASB-5SI#S0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1LV0808ASB-5SI#S0?

R1LV0808ASB-5SI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1LV0808ASB-5SI#S0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LV0808ASB-5SI#S0?

For technical support, including R1LV0808ASB-5SI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0808ASB-5SI#S0 requirements.

6.How does Aetrix verify that R1LV0808ASB-5SI#S0 is sourced from the original manufacturer or authorized distributors?

All R1LV0808ASB-5SI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0808ASB-5SI#S0 meets industry standards.

7.What is the process for return or replacement of R1LV0808ASB-5SI#S0?

All R1LV0808ASB-5SI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0808ASB-5SI#S0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LV0808ASB-5SI#S0 part is unused and in its original packaging.

Return procedure for R1LV0808ASB-5SI#S0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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