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Renesas R1LV0808ASB-7SI#B0
- Part No.:
- R1LV0808ASB-7SI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
R1LV0808ASB-7SI#B0.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:1,085
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Product details
Overview
R1LV0808ASB-7SI#B0 from Renesas Electronics is an 8Mb low-power static RAM organized as 1,048,576 × 8-bit, fabricated in 0.15μm CMOS/TFT technology, operating from 2.4V to 3.6V with 70ns access time and −40°C to +85°C industrial temperature range, used for battery-backed memory in portable instrumentation and embedded controllers.
For engineers reviewing the R1LV0808ASB-7SI#B0 datasheet, R1LV0808ASB-7SI#B0 pinout, R1LV0808ASB-7SI#B0 application, or R1LV0808ASB-7SI#B0 equivalent, key selection criteria include standby current (1.2μA typ. at 3.0V), TTL-compatible I/O, no-refresh operation, and TSOP(II) package compatibility with space-constrained PCB layouts.
Technical Context
This device implements a fully asynchronous SRAM architecture with dual chip select (CS1#, CS2) enabling flexible memory expansion and data retention control. Its address buffer, sense/write amplifier, and column/row decoder are optimized for low-voltage operation without clocks or refresh cycles.
Two independent chip select inputs allow hierarchical memory mapping: CS2 controls address and I/O buffers during active operation, while either CS1# or CS2 can initiate data retention mode with VCC as low as 1.5V and ICCDR ≤20μA at +85°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 8 Mbit (1,048,576 words × 8 bits) - supports byte-wide data bus interfacing without external width conversion |
| Supply voltage | 2.4V–3.6V - enables direct integration with 2.5V/3.3V logic domains and battery-powered systems |
| Access time | 70 ns max - guarantees timing compliance in 14.3 MHz synchronous bus interfaces with adequate setup/hold margins |
| Standby current | 1.2 μA typ. at 3.0V, +25°C - extends battery life in always-on backup memory applications |
| Operating temp | −40°C to +85°C - qualified for industrial-grade embedded control and measurement equipment |
| Data retention VCC | 1.5V min - maintains stored data during brown-out or battery-switchover with no external capacitor required |
| I/O interface | TTL-compatible inputs/outputs - eliminates level-shifting circuitry when interfacing with legacy microcontrollers |
Pinout & Package
Packaged in a 44-pin plastic TSOP(II) (11.76mm × 18.41mm, normal-bend type, 44P3F), this device uses standard surface-mount footprint compatible with automated assembly and high-density PCB routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address input | 20-bit word address bus supporting full 1M-word decoding without external address demultiplexing |
| DQ0–DQ7 | Bi-directional data I/O | Common data bus with three-state outputs enables OR-tie expansion and eliminates need for external bus transceivers |
| CS1#, CS2 | Chip select inputs | Dual-select architecture allows hierarchical memory banking and selective data retention activation |
| WE#, OE# | Control inputs | Asynchronous write enable and output enable provide precise cycle control without clock domain constraints |
| VCC, VSS | Power terminals | Single-supply operation with dedicated power/ground pins minimizes switching noise coupling into memory array |
| NC | No-connect | Unbonded pins (pins 7, 8, 16, 17, 28, 29, 37, 38, 41, 42) - must remain unconnected per design |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates system-level DRAM controller overhead and timing-critical refresh cycles |
| Low standby current | 1.2 μA typical at 3.0V enables >1-year battery backup using standard CR2032 cells |
| Data retention mode | Operates down to 1.5V VCC with ≤20 μA retention current, supporting seamless power-fail recovery |
| TTL-compatible I/O | Direct interface with 5V-tolerant or 3.3V microcontrollers without level shifters or pull-up resistors |
| Three-state outputs | Enables multi-device bus sharing and simplifies memory expansion via CS1#/CS2 decoding |
Applications
| Portable Medical Monitor | Industrial PLC Data Logger |
|---|---|
Use Scenario: Real-time waveform capture and local storage during AC power interruption. IC Role / Device Role / Timing Role: Nonvolatile backup memory retaining patient vitals for ≥72 hours on coin-cell power. Use Value: 1.5V data retention threshold and 1.2μA standby current ensure reliable logging without supercapacitors or backup regulators. | Use Scenario: Cyclic logging of sensor readings in factory-floor automation cabinets. IC Role / Device Role / Timing Role: Primary working memory for microcontroller-based data acquisition with zero-refresh overhead. Use Value: 70ns access time meets 14.3MHz bus timing; −40°C to +85°C rating ensures stable operation inside sealed enclosures. |
| Smart Meter Firmware Cache | Avionics Test Equipment Buffer |
Use Scenario: Storing firmware patches and calibration tables accessible during meter boot-up. IC Role / Device Role / Timing Role: Fast-access configuration memory mapped directly to MCU address space. Use Value: TTL-compatible I/O and 2.4–3.6V supply range simplify integration with existing 3.3V meter SoCs. | Use Scenario: High-speed transient capture buffer in ground-based aircraft diagnostics hardware. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for real-time signal buffering prior to FPGA processing. Use Value: Dual chip select (CS1#/CS2) enables banked memory access and deterministic read/write arbitration in multi-master test systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 16-bit bus width, 10ns access, 3.3V only, 48-pin TSOPII | Higher bandwidth but incompatible pinout and data width; requires PCB redesign | Select only if 16-bit interface and faster timing are mandatory and layout revision is acceptable |
| CY62128ELL-45ZSXIT | 8-bit bus, 45ns access, 2.7–5.5V supply, 28-pin SOIC | Wider voltage range and smaller package but higher 2μA standby current and no sub-2V data retention | Prefer for cost-sensitive, non-battery-backed designs where 45ns speed justifies trade-off in retention capability |
Compared with IS61LV25616AL-10TLI and CY62128ELL-45ZSXIT, the R1LV0808ASB-7SI#B0 uniquely balances ultra-low standby current, 1.5V data retention, and industrial temperature support in a 44-pin TSOP(II) footprint-making it optimal for battery-dependent, space-constrained embedded memory applications where reliability across power transitions is critical.
Availability
R1LV0808ASB-7SI#B0 is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data loggers, smart meter firmware caches, and avionics test equipment requiring stable component supply across extended product lifecycles.
Supply support for R1LV0808ASB-7SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.
The R1LV0808ASB series belongs to Renesas' low-power static RAM product line, designed specifically for battery-operated and battery-backup memory systems requiring zero-refresh operation and extended data retention under brown-out conditions.
FAQ
What is the minimum supply voltage required for data retention in R1LV0808ASB-7SI#B0?
The R1LV0808ASB-7SI#B0 maintains stored data down to 1.5V VCC in data retention mode, as specified in the DC Characteristics table on page 13 of the datasheet. This capability enables reliable operation during battery voltage sag or power-fail transitions without external hold-up circuitry. The R1LV0808ASB-7SI#B0 achieves this with ICCDR ≤20μA at +85°C, making it suitable for long-duration backup using primary lithium cells.
Does R1LV0808ASB-7SI#B0 require a clock signal or refresh cycles?
No, the R1LV0808ASB-7SI#B0 is a true asynchronous static RAM and requires neither clock signals nor periodic refresh cycles. Its internal architecture uses latched flip-flops for data storage, eliminating DRAM-style refresh overhead. This simplifies system design, reduces MCU firmware complexity, and improves deterministic timing behavior-key advantages confirmed in the "No clocks, No refresh" feature listing on page 1 of the datasheet.
What is the function of the dual chip select inputs (CS1# and CS2) in R1LV0808ASB-7SI#B0?
In the R1LV0808ASB-7SI#B0, CS1# and CS2 serve complementary roles: CS1# acts as primary chip select for normal read/write operations, while CS2 controls buffer enablement and also initiates data retention mode when driven low. As detailed in the Operation Table (page 5) and Data Retention section (page 13), either CS1# ≥ VCC−0.2V with CS2 in high-impedance or CS2 ≤ 0.2V can trigger retention-providing flexible power-management strategies. The R1LV0808ASB-7SI#B0 leverages this dual-select architecture for hierarchical memory mapping and seamless low-power state entry.
Can R1LV0808ASB-7SI#B0 be interfaced directly with a 5V microcontroller?
The R1LV0808ASB-7SI#B0 features TTL-compatible inputs, meaning VIH = 2.2V (min) and VIL = 0.4V (max) across its 2.4–3.6V supply range-fully compatible with 5V-tolerant MCU I/Os configured for 3.3V logic levels. However, direct connection to pure 5V outputs violates absolute maximum ratings (VT ≤ VCC+0.3V), so level translation or current-limiting resistors are required if the host MCU lacks 3.3V-tolerant pins. This constraint is explicitly stated in the Absolute Maximum Ratings table (page 5).
What package type and dimensions does R1LV0808ASB-7SI#B0 use?
The R1LV0808ASB-7SI#B0 is housed in a 44-pin plastic TSOP(II) package measuring 11.76mm × 18.41mm with normal-bend leads (package code 44P3F), as documented on page 1 of the datasheet. This JEDEC-standard thin small-outline package supports fine-pitch surface-mount assembly, offers excellent thermal performance for low-power operation, and provides routing flexibility on dense PCBs-particularly advantageous in portable and industrial edge devices where board area is constrained.
R1LV0808ASB-7SI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 8Mbit
- Memory Organization:
- 1M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.4V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
R1LV0808ASB-7SI#B0 FAQ
1.How can I place an order for R1LV0808ASB-7SI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0808ASB-7SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0808ASB-7SI#B0 reliable?
The price and inventory of R1LV0808ASB-7SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0808ASB-7SI#B0 is usually 5 days.
3.What payment methods are accepted for R1LV0808ASB-7SI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0808ASB-7SI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0808ASB-7SI#B0?
R1LV0808ASB-7SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0808ASB-7SI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0808ASB-7SI#B0?
For technical support, including R1LV0808ASB-7SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0808ASB-7SI#B0 requirements.
6.How does Aetrix verify that R1LV0808ASB-7SI#B0 is sourced from the original manufacturer or authorized distributors?
All R1LV0808ASB-7SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0808ASB-7SI#B0 meets industry standards.
7.What is the process for return or replacement of R1LV0808ASB-7SI#B0?
All R1LV0808ASB-7SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0808ASB-7SI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0808ASB-7SI#B0 part is unused and in its original packaging.
Return procedure for R1LV0808ASB-7SI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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