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Renesas R1LV0808ASB-7SI#S0
- Part No.:
- R1LV0808ASB-7SI#S0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
R1LV0808ASB-7SI#S0.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:1,000
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Product details
Overview
R1LV0808ASB-7SI#S0 from Renesas Electronics is an 8Mb low-power static RAM organized as 1,048,576 × 8-bit, fabricated in 0.15μm CMOS/TFT technology, operating from 2.4V to 3.6V with 70ns access time and -40°C to +85°C industrial temperature range, used for battery-backed memory in portable instrumentation and embedded controllers.
For engineers reviewing the R1LV0808ASB-7SI#S0 datasheet, R1LV0808ASB-7SI#S0 pinout, R1LV0808ASB-7SI#S0 application, or R1LV0808ASB-7SI#S0 equivalent, key selection criteria include standby current (1.2μA typ. at 3.0V), TTL-compatible I/O, no-refresh operation, and TSOP(II) 44-pin package compatibility with space-constrained PCB layouts.
Technical Context
This LPSRAM implements asynchronous parallel interface logic with dual chip select (CS1#, CS2) enabling flexible memory expansion and data retention control. It uses a full static architecture with no clocks or refresh cycles, supporting OR-tie bus sharing via three-state outputs controlled by OE#.
Address decoding covers A0–A19 (20-bit), supporting full 1M-word addressing; write operations require simultaneous CS1# low, CS2 high, and WE# low, while read operations activate on CS1# low, CS2 high, and OE# low - all with TTL-level voltage thresholds and guaranteed timing margins across voltage/temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 8Mb (1,048,576 × 8-bit) - supports byte-wide data paths without external width conversion |
| Supply voltage | 2.4V–3.6V - enables direct interface with 2.5V/3.3V logic domains and battery-powered systems |
| Access time | 70ns max - ensures compatibility with microcontrollers and FPGAs running ≤14MHz synchronous bus interfaces |
| Standby current | 1.2μA typ. at 3.0V - extends battery life in always-on backup memory applications |
| Operating temp | -40°C to +85°C - qualified for industrial-grade embedded systems without thermal derating |
| I/O compatibility | TTL - eliminates level-shifter requirements when interfacing with legacy MCU families |
| Data retention Vcc | 1.5V–3.6V - maintains stored data during brown-out or battery-switchover events |
Pinout & Package
Packaged in a 44-pin plastic TSOP (II) (11.76mm × 18.41mm, normal-bend type, 44P3F), surface-mountable with standard reflow profiles and compatible with automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address input | 20-bit address bus supporting full 1M-word decoding; no multiplexing required |
| DQ0–DQ7 | Bi-directional data I/O | Common data bus with three-state control; enables OR-tie for shared memory expansion |
| CS1#, CS2 | Chip select inputs | Dual-select architecture allows hierarchical memory mapping and low-power data retention mode selection |
| WE# | Write enable | Active-low control synchronizing write cycles; timing-critical for setup/hold compliance |
| OE# | Output enable | Prevents bus contention during read; decouples output drivers from system data bus |
| VCC, VSS | Power/Ground | Single-supply operation; requires local 0.1μF bypass per VCC pin for noise immunity |
| NC | No connection | Unbonded pins (positions 7, 8, 16, 17, 28, 29, 37, 38, 41, 42); must remain unconnected |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates external refresh controller or timer overhead - reduces firmware complexity and power management burden |
| Low standby current | 1.2μA typical at 3.0V enables >1-year battery backup using coin-cell sources in metering and logging devices |
| Two-chip-select architecture | CS1# and CS2 jointly enable memory expansion up to 16MB using external decode logic without additional glue logic |
| TTL-compatible I/O | Direct interface with 5V-tolerant or 3.3V microcontrollers (e.g., Renesas RL78, SH-2A) without level translation |
| Data retention mode | Operates down to 1.5V VCC with <20μA retention current - supports seamless switchover between main and backup power rails |
Applications
| Portable Data Logger | Industrial PLC Memory Buffer |
|---|---|
Use Scenario: Battery-powered environmental sensor node recording temperature/humidity at 10s intervals for 30 days. IC Role / Device Role / Timing Role: Non-volatile data buffer retaining logs during power loss; accessed asynchronously by ARM Cortex-M0+ MCU. Use Value: 1.2μA standby current extends CR2032 battery life beyond 18 months; 70ns access supports real-time timestamping without CPU wait states. | Use Scenario: Compact programmable logic controller storing ladder logic variables and I/O state history in factory automation cabinets. IC Role / Device Role / Timing Role: Fast-access scratchpad memory for runtime variable storage; retains critical state during AC mains interruption. Use Value: Dual CS pins allow seamless integration into existing 16-bit bus designs; data retention down to 1.5V prevents loss during brown-out conditions. |
| Medical Diagnostic Handheld | Automotive Infotainment Cache |
Use Scenario: Portable ECG analyzer capturing waveform samples at 1kHz and buffering 60 seconds before wireless upload. IC Role / Device Role / Timing Role: High-reliability temporary storage for raw ADC data prior to compression and transmission. Use Value: -40°C to +85°C rating ensures operation in uncontrolled clinical environments; TTL compatibility avoids signal integrity issues with mixed-voltage SoC interfaces. | Use Scenario: In-vehicle navigation unit caching map tiles and route calculation results to reduce SSD wear and latency. IC Role / Device Role / Timing Role: Low-latency SRAM cache bridging application processor and eMMC storage subsystem. Use Value: 70ns access time enables sub-100ns read cycles - critical for real-time UI responsiveness; TSOP(II) footprint fits tight automotive PCB constraints. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 256K × 16-bit, 10ns access, 3.3V only, 48-pin TSOPII - higher density but wider bus and faster speed | Requires 16-bit data path redesign; unsuitable for byte-oriented legacy systems | Select only if migrating to wider bus and needing >10× speed margin |
| AS6C4008-70SCN | 4Mb × 8-bit, 70ns access, 2.7–3.6V, 44-pin TSOP(II) - same package and timing, lower density | Half memory capacity; may require software partitioning or external bank switching | Choose when 4Mb suffices and cost sensitivity outweighs upgrade path flexibility |
Compared with IS61LV25616AL-10TLI and AS6C4008-70SCN, the R1LV0808ASB-7SI#S0 uniquely balances 8Mb density, 70ns timing, 2.4V minimum supply, and industrial temperature range in a drop-in 44-pin TSOP(II) footprint - making it optimal for battery-backed embedded memory upgrades where voltage headroom and thermal robustness are critical.
Availability
R1LV0808ASB-7SI#S0 is available at Aetrix Electronics and suitable for portable instrumentation, industrial PLCs, and medical handhelds requiring stable component supply across extended product lifecycles.
Supply support for R1LV0808ASB-7SI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for industrial, automotive, and enterprise applications.
The R1LV0808ASB series belongs to Renesas' Advanced LPSRAM product line, designed specifically for ultra-low-power, no-refresh memory applications in battery-operated and mission-critical embedded systems.
FAQ
What is the maximum access time specification for R1LV0808ASB-7SI#S0?
The R1LV0808ASB-7SI#S0 has a maximum address access time (tAA) of 70ns over the full operating temperature range (-40°C to +85°C) and supply voltage range (2.4V to 3.6V). This value applies under worst-case conditions including VCC = 2.4V–2.7V and Ta = +85°C, ensuring reliable timing margin for synchronous bus interfacing with legacy microcontrollers and FPGAs.
Does R1LV0808ASB-7SI#S0 require a refresh circuit or clock signal?
No, the R1LV0808ASB-7SI#S0 is a true static RAM and requires no refresh circuitry or clock signal. Its fully static CMOS design maintains data indefinitely as long as power is applied and CS1#/CS2 are held inactive, eliminating timing-critical refresh overhead and simplifying system-level power management for the R1LV0808ASB-7SI#S0.
Can R1LV0808ASB-7SI#S0 operate from a 2.5V supply?
Yes, the R1LV0808ASB-7SI#S0 is fully specified to operate from 2.4V to 3.6V, making 2.5V a valid and commonly used supply voltage. At 2.5V, the device meets all AC/DC specifications including 70ns access time, 1.2μA standby current (typ.), and TTL-compatible input thresholds - confirmed in the "Recommended Operating Conditions" table of the R1LV0808ASB-7SI#S0 datasheet.
What package type is used for R1LV0808ASB-7SI#S0?
The R1LV0808ASB-7SI#S0 uses a 44-pin plastic TSOP (II) package measuring 11.76mm × 18.41mm with normal-bend leads (JEDEC MO-141AC, 44P3F). This surface-mount package supports standard reflow soldering, provides excellent thermal performance for industrial ambient temperatures, and is pin-compatible with other 44-pin TSOP(II) SRAMs in the same family.
How does the data retention mode work on R1LV0808ASB-7SI#S0?
The R1LV0808ASB-7SI#S0 enters data retention mode when either CS2 is held ≤0.2V or CS1# is held ≥VCC−0.2V, allowing operation down to 1.5V VCC with ≤20μA current draw at +85°C. During retention, address, data, and control lines enter high-impedance states - preserving stored content without active access, which is essential for battery-switchover in metering and backup memory applications using the R1LV0808ASB-7SI#S0.
R1LV0808ASB-7SI#S0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 8Mbit
- Memory Organization:
- 1M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.4V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
R1LV0808ASB-7SI#S0 FAQ
1.How can I place an order for R1LV0808ASB-7SI#S0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0808ASB-7SI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0808ASB-7SI#S0 reliable?
The price and inventory of R1LV0808ASB-7SI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0808ASB-7SI#S0 is usually 5 days.
3.What payment methods are accepted for R1LV0808ASB-7SI#S0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0808ASB-7SI#S0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0808ASB-7SI#S0?
R1LV0808ASB-7SI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0808ASB-7SI#S0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0808ASB-7SI#S0?
For technical support, including R1LV0808ASB-7SI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0808ASB-7SI#S0 requirements.
6.How does Aetrix verify that R1LV0808ASB-7SI#S0 is sourced from the original manufacturer or authorized distributors?
All R1LV0808ASB-7SI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0808ASB-7SI#S0 meets industry standards.
7.What is the process for return or replacement of R1LV0808ASB-7SI#S0?
All R1LV0808ASB-7SI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0808ASB-7SI#S0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0808ASB-7SI#S0 part is unused and in its original packaging.
Return procedure for R1LV0808ASB-7SI#S0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV0808ASB-7SI#S0 Tags
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