Renesas R1LV0816ABG-5SI#B0

Overview

R1LV0816ABG-5SI from Renesas Electronics is an 8Mb low-power static RAM organized as 524,288 words × 16 bits, fabricated in 0.15 µm CMOS/TFT process. It operates from a single 2.4–3.6 V supply, delivers 55 ns access time, draws only 1.2 µA standby current at 3.0 V, and supports battery-backed memory retention down to 1.5 V - ideal for portable instrumentation and industrial data loggers requiring non-refresh, TTL-compatible interfacing.

For engineers reviewing the R1LV0816ABG-5SI datasheet, R1LV0816ABG-5SI pinout, R1LV0816ABG-5SI application, or R1LV0816ABG-5SI equivalent, key selection criteria include its 48-ball f-BGA (7.5 mm × 8.5 mm, 0.75 mm pitch) package, byte-selectable 16-bit I/O, -40°C to +85°C industrial temperature range, and support for OR-tie bus sharing without external logic.

Technical Context

This LPSRAM implements a fully asynchronous architecture with no clocks or refresh cycles required. Its dual chip select (CS1#, CS2), independent upper/lower byte enables (UB#, LB#), and three-state output control via OE# enable flexible memory expansion and multi-device bus arbitration in compact embedded systems.

The device uses a hierarchical decoder structure with separate row/column decoding and sense/write amplifiers optimized for low-voltage operation. Data retention mode is activated by specific combinations of CS2, CS1#, or UB#/LB# levels - allowing V_CC to drop to 1.5 V while preserving stored data with sub-µA current draw.

Key Specifications

Pinout & Package

Package: 48-ball fine-pitch BGA (f-BGA), 7.5 mm × 8.5 mm body, 0.75 mm ball pitch, 6×8 array (PTBG0048HB-A).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power SRAM applications.

Compared with IS61LV25616AL-10TLI and AS6C4008-55TIN, the R1LV0816ABG-5SI uniquely combines 55 ns speed, 2.4 V minimum supply, sub-µA standby, and 1.5 V data retention - making it the only option for ultra-low-power, wide-voltage, battery-backed memory in space-constrained industrial designs.

Availability

R1LV0816ABG-5SI is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, and automotive telematics gateways requiring stable component supply across extended product lifecycles.

Supply support for R1LV0816ABG-5SI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LV0816ABG series was developed as part of Renesas' Advanced LPSRAM family targeting battery-operated and space-constrained embedded systems needing simple, robust, low-leakage memory without refresh overhead.

FAQ

What is the minimum supply voltage required for data retention in R1LV0816ABG-5SI?

The R1LV0816ABG-5SI maintains stored data down to 1.5 V on V_CC, provided CS2 is held ≤0.2 V or LB#/UB# are asserted ≥V_CC−0.2 V while CS1# is ≤0.2 V. This enables reliable operation during brown-out events or supercapacitor discharge phases without external retention circuitry. The R1LV0816ABG-5SI retains data at temperatures up to +85°C with ICCDR ≤20 µA.

Does R1LV0816ABG-5SI require external refresh circuitry?

No, the R1LV0816ABG-5SI is a true static RAM and requires no refresh cycles or clocks. All memory cells retain data as long as power is applied and control signals meet valid timing windows. This eliminates refresh-related firmware complexity, timing jitter, and power surges - a key advantage over DRAM or pseudo-SRAMs. The R1LV0816ABG-5SI achieves this using standard 6T SRAM cell architecture with full CMOS latching.

Can R1LV0816ABG-5SI be used in a 32-bit data bus configuration?

Yes, the R1LV0816ABG-5SI supports OR-tie bus sharing via three-state outputs, enabling direct connection of two devices to form a 32-bit-wide memory interface. Each R1LV0816ABG-5SI handles 16 bits, with shared address/control lines and independent DQ buses tied together through series resistors. The R1LV0816ABG-5SI's 55 ns tAA and tOE ensure synchronized access across both devices without skew-induced timing violations.

What is the maximum operating temperature range for R1LV0816ABG-5SI?

The R1LV0816ABG-5SI is rated for continuous operation from -40°C to +85°C ambient temperature, meeting industrial-grade environmental requirements. Electrical parameters including tAA, tWC, and ISB are guaranteed across this full range, with derating applied only to standby current above +40°C (e.g., ISB ≤6 µA at +40°C, ≤20 µA at +85°C). The R1LV0816ABG-5SI's 0.15 µm CMOS/TFT process ensures stable performance across thermal extremes.

Is the R1LV0816ABG-5SI pin-compatible with other Renesas LPSRAMs like R1LV0816ABG-7SI?

Yes, the R1LV0816ABG-5SI and R1LV0816ABG-7SI share identical pinout, package (48-ball f-BGA), and functional interface - differing only in access time (55 ns vs. 70 ns) and supported voltage ranges (2.4–3.6 V vs. 2.4–2.7 V or 2.7–3.6 V). This allows direct substitution in designs where timing margin permits, though the R1LV0816ABG-5SI must be used if 55 ns performance is required at 2.4 V minimum supply.