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Renesas R1LV0816ABG-5SI#S0

Part No.:
R1LV0816ABG-5SI#S0
Manufacturer:
Renesas
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixR1LV0816ABG-5SI#S0.pdf
Description:
IC SRAM 8MBIT PARALLEL 48TFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,242

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Product details

Overview

R1LV0816ABG-5SI from Renesas Electronics is an 8Mb low-power static RAM organized as 524,288 words × 16 bits, fabricated in 0.15 µm CMOS/TFT process. It operates from a single 2.4–3.6 V supply, delivers 55 ns access time, and draws only 1.2 µA standby current at 3.0 V - optimized for battery-backed memory systems in portable instrumentation and industrial controllers.

For engineers reviewing the R1LV0816ABG-5SI datasheet, R1LV0816ABG-5SI pinout, R1LV0816ABG-5SI application, or R1LV0816ABG-5SI equivalent, key selection criteria include its f-BGA48 (7.5 mm × 8.5 mm, 0.75 mm pitch) package, TTL-compatible I/O, no-refresh operation, byte-select capability via LB#/UB#, and -40°C to +85°C industrial temperature range.

Technical Context

This advanced LPSRAM implements asynchronous SRAM architecture with dual chip select (CS1#, CS2), independent upper/lower byte enables (UB#, LB#), and three-state bidirectional data I/O (DQ0–DQ15). Its block diagram confirms full address decoding (A0–A18), column/row decoders, sense/write amplifiers, and output buffers - all operating without clocks or refresh cycles.

Operation modes are controlled by combinational logic of CS1#, CS2, WE#, OE#, LB#, and UB#: word read/write requires CS1# low + CS2 high; byte operations activate LB# or UB# low; standby occurs when CS2 is low or both CS1# and CS2 are inactive. Data retention is supported down to 1.5 V with sub-µA current draw.

Key Specifications

ParameterValue and Actual Design Meaning
Memory capacity8 Mbit (524,288 × 16-bit organization) - supports 16-bit data bus interfaces without external width expansion.
Access time55 ns (max) - enables direct interface with microcontrollers and FPGAs running ≤18 MHz synchronous buses.
Supply voltage2.4–3.6 V - compatible with 2.5 V and 3.3 V logic domains; eliminates need for level shifters in mixed-voltage systems.
Standby current1.2 µA typ. at 3.0 V - extends battery life in always-on backup memory applications such as real-time clock modules.
Operating temperature-40°C to +85°C - qualified for industrial-grade embedded systems including PLCs and motor drives.
Package48-ball f-BGA (7.5 mm × 8.5 mm, 0.75 mm pitch) - reduces PCB area vs. TSOP and improves routing density for compact designs.
I/O compatibilityTTL-compatible inputs/outputs - ensures interoperability with legacy 5 V-tolerant microcontrollers and CPLDs using 3.3 V supply.

Pinout & Package

48-ball fine-pitch BGA (f-BGA) package: PTBG0048HB-A(48FHH), 7.5 mm × 8.5 mm body size, 0.75 mm ball pitch, 6×8 array layout.

Pin/TerminalCircuit RoleDesign Meaning
VccPower supplyPrimary 2.4–3.6 V supply rail; decoupling required within 5 mm per Renesas layout guidelines.
VssGroundDigital ground reference; must be connected to low-impedance PCB plane for noise immunity.
A0–A18Address input19-bit address bus supporting full 512k-word addressing; A18 is MSB for 8 Mb capacity.
DQ0–DQ15Data I/OBidirectional 16-bit data bus; three-state outputs enable OR-tie bus sharing without external transceivers.
CS1#, CS2Chip selectTwo-level hierarchical chip enable: CS1# active-low primary select; CS2 active-high secondary control for power gating and bank isolation.
WE#, OE#Control inputWrite Enable (active-low) and Output Enable (active-low) provide standard SRAM timing control; OE# prevents bus contention during read cycles.
LB#, UB#Byte enableLower/Upper Byte Enable (active-low) allow 8-bit partial writes without disturbing adjacent bytes - critical for efficient firmware updates and buffer management.
NCNo connectionUnbonded balls (A1, C1, G1, H3); must remain unconnected on PCB to avoid signal integrity issues.

Key Features

FeatureDesign Value
No refresh requiredEliminates DRAM controller complexity and periodic refresh overhead - simplifies FPGA-based memory subsystems and reduces firmware footprint.
Low-voltage operation2.4–3.6 V supply range enables direct integration into battery-powered devices (e.g., handheld meters) without voltage regulation stages.
Byte-select capabilityIndependent LB# and UB# pins support true 8-bit write granularity - avoids read-modify-write sequences and improves write efficiency in embedded OS kernels.
TTL-compatible I/OVIH = 2.2 V min, VIL = 0.4 V max at 3.0 V allows seamless interfacing with legacy 3.3 V microcontrollers (e.g., Renesas RL78, SH-2) without level-shifting circuitry.
Data retention modeSupports 1.5–3.6 V retention voltage with ICCDR ≤ 20 µA at +85°C - maintains SRAM contents during main power loss while minimizing backup battery drain.

Applications

Industrial PLC Memory BufferPortable Medical Device Data Log

Use Scenario: Stores real-time sensor history and configuration parameters in programmable logic controllers during runtime and power interruption.

IC Role / Device Role / Timing Role: Asynchronous SRAM providing non-refresh volatile storage with fast random access for cyclic data buffering and firmware variable tables.

Use Value: 55 ns access time enables deterministic response to ladder logic scan cycles; 1.2 µA standby current preserves data for >1 year on coin-cell backup.

Use Scenario: Captures ECG waveforms and patient metrics in handheld diagnostic tools powered by rechargeable Li-ion batteries.

IC Role / Device Role / Timing Role: Low-voltage SRAM acting as acquisition buffer between ADC and host MCU, supporting burst-mode sampling without DMA bottlenecks.

Use Value: 2.4 V minimum supply allows operation down to battery end-of-discharge; byte-enable pins reduce power during partial waveform saves.

Automotive Infotainment CacheNetwork Edge Router Packet Buffer

Use Scenario: Holds UI assets and temporary navigation map tiles in automotive head units where thermal and space constraints limit cooling and board area.

IC Role / Device Role / Timing Role: Compact f-BGA SRAM serving as high-speed cache between SoC and display controller, reducing latency for graphics rendering.

Use Value: 7.5 mm × 8.5 mm f-BGA footprint minimizes PCB real estate; -40°C to +85°C rating meets AEC-Q100 Grade 3 requirements for cabin electronics.

Use Scenario: Buffers packet headers and metadata in small-form-factor enterprise switches requiring deterministic latency and low power during idle periods.

IC Role / Device Role / Timing Role: Standby-optimized SRAM used for header queueing in ASIC/FPGA-based forwarding engines, enabling rapid context switching.

Use Value: Sub-µA standby current reduces system quiescent power; OR-tie capable DQ lines simplify multi-port buffer interconnection without external logic.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61LV51216AL-10TLI10 ns access time, 3.3 V only (3.135–3.465 V), 48-pin TSOP-II packageHigher speed but narrower voltage range and larger footprint; unsuitable for battery-backed or wide-temp designsSelect when system clock exceeds 100 MHz and board space permits TSOP; avoid for low-voltage or extended temperature use.
AS6C4008-55PCN55 ns access, 2.7–3.6 V, 44-pin SOP package, 1.5 mA typical standby currentHigher standby current and through-hole packaging increase board cost and power in portable systemsPrefer for legacy through-hole assembly or where SOP handling is mandated; not optimal for space-constrained or ultra-low-power designs.

Compared with IS61LV51216AL-10TLI and AS6C4008-55PCN, the R1LV0816ABG-5SI uniquely balances 55 ns speed, 2.4 V minimum supply, 1.2 µA standby, and compact f-BGA - making it the only choice for battery-backed industrial controllers requiring both performance and energy efficiency in minimal area.

Availability

R1LV0816ABG-5SI is available at Aetrix Electronics and suitable for industrial PLCs, portable medical diagnostics, automotive infotainment systems, and network edge routers requiring stable component supply across long product lifecycles.

Supply support for R1LV0816ABG-5SI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LV0816ABG series belongs to Renesas' Advanced LPSRAM product line, designed specifically for low-power, battery-operated, and battery-backup memory applications where simplicity, reliability, and wide voltage operation are critical.

FAQ

What is the maximum access time specification for the R1LV0816ABG-5SI?

The R1LV0816ABG-5SI has a maximum access time of 55 ns under recommended operating conditions (Vcc = 2.4–3.6 V, Ta = -40°C to +85°C). This value applies when Vcc is ≥2.7 V; if Vcc is 2.4–2.7 V, the 70 ns specification of the -7SI variant governs. The 55 ns figure ensures reliable interface timing with microcontrollers and FPGAs operating up to 18 MHz.

Does the R1LV0816ABG-5SI require a refresh circuit?

No, the R1LV0816ABG-5SI is a static RAM and does not require any refresh circuitry. Its CMOS latch-based memory cells retain data as long as power is applied, eliminating the need for external refresh controllers, timers, or associated firmware overhead - a key advantage over DRAM in resource-constrained embedded systems.

What is the function of the CS2 pin on the R1LV0816ABG-5SI?

The CS2 pin on the R1LV0816ABG-5SI is an active-high secondary chip select that works in conjunction with CS1# (active-low) to define operational states. When CS2 is low, the device enters standby mode regardless of CS1# state; when CS2 is high and CS1# is low, normal read/write operations occur. CS2 also controls internal buffers during data retention.

Can the R1LV0816ABG-5SI operate from a 2.5 V supply?

Yes, the R1LV0816ABG-5SI is fully specified to operate from 2.4 V to 3.6 V, so 2.5 V is within its valid supply range. At 2.5 V, timing parameters default to the 70 ns specifications of the R1LV0816ABG-7SI variant per the datasheet note - meaning tAA, tRC, and other AC characteristics are relaxed to ensure robust operation at lower voltage.

What package type is used for the R1LV0816ABG-5SI?

The R1LV0816ABG-5SI uses a 48-ball fine-pitch ball grid array (f-BGA) package designated PTBG0048HB-A(48FHH), with dimensions of 7.5 mm × 8.5 mm and a 0.75 mm ball pitch. This compact surface-mount package supports high-density PCB layouts and improved thermal dissipation compared to TSOP or SOP alternatives.

R1LV0816ABG-5SI#S0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM
Memory Size:
8Mbit
Memory Organization:
512K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-TFBGA (7.5x8.5)

R1LV0816ABG-5SI#S0 FAQ

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Please submit a Request for Quotation (RFQ) for R1LV0816ABG-5SI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of R1LV0816ABG-5SI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0816ABG-5SI#S0 is usually 5 days.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LV0816ABG-5SI#S0?

For technical support, including R1LV0816ABG-5SI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0816ABG-5SI#S0 requirements.

6.How does Aetrix verify that R1LV0816ABG-5SI#S0 is sourced from the original manufacturer or authorized distributors?

All R1LV0816ABG-5SI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0816ABG-5SI#S0 meets industry standards.

7.What is the process for return or replacement of R1LV0816ABG-5SI#S0?

All R1LV0816ABG-5SI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0816ABG-5SI#S0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LV0816ABG-5SI#S0 part is unused and in its original packaging.

Return procedure for R1LV0816ABG-5SI#S0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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