Renesas R1LV0816ABG-7SI#B0

Overview

R1LV0816ABG-7SI#B0 from Renesas Electronics is an 8Mb low-power static RAM organized as 524,288 words × 16 bits, fabricated in 0.15 µm CMOS/TFT process. It operates from a single 2.4–3.6 V supply, delivers 70 ns access time, draws only 1.2 µA standby current at 3.0 V, and supports battery-backed memory retention down to 1.5 V - ideal for portable instrumentation and industrial backup memory systems.

For engineers reviewing the R1LV0816ABG-7SI#B0 datasheet, R1LV0816ABG-7SI#B0 pinout, R1LV0816ABG-7SI#B0 application, or R1LV0816ABG-7SI#B0 equivalent, key selection criteria include its f-BGA48 (7.5 mm × 8.5 mm, 0.75 mm pitch) package, TTL-compatible I/O, no-refresh operation, and byte-selectable write capability via LB#/UB#.

Technical Context

This LPSRAM implements asynchronous, non-volatile-retentive SRAM architecture with dual chip select (CS1#, CS2), independent upper/lower byte enables (UB#, LB#), and three-state bidirectional DQ0–DQ15 I/Os. Its address buffer, data selector, and sense/write amplifier blocks are fully static, eliminating clocking or refresh circuitry.

Operation relies on combinational control of CS1#, CS2, WE#, OE#, LB#, and UB# to define read/write/standby modes per the documented operation table. Data retention mode is activated by specific CS2, CS1#, or LB#/UB# voltage conditions while VCC remains ≥1.5 V, enabling ultra-low-current (<20 µA at +85°C) backup operation.

Key Specifications

Pinout & Package

Package: 48-ball fine-pitch BGA (f-BGA), 7.5 mm × 8.5 mm body, 0.75 mm ball pitch, PTBG0048HB-A (48FHH) footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power SRAM applications.

Compared with CY62167EV30LL-70ZSXI and IS61WV51216BLL-70NLI, R1LV0816ABG-7SI#B0 uniquely supports 2.4–3.6 V operation, achieves lowest standby current (1.2 µA), and provides native 16-bit bus + byte-select - making it optimal for compact, battery-sensitive 16-bit embedded systems.

Availability

R1LV0816ABG-7SI#B0 is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, smart meter firmware cache, and avionics health monitoring units requiring stable component supply across extended product lifecycles.

Supply support for R1LV0816ABG-7SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.

R1LV0816ABG-7SI#B0 belongs to Renesas' Advanced Low-Power SRAM (LPSRAM) product line, engineered specifically for battery-operated and energy-constrained embedded systems requiring zero-refresh, high-reliability memory with extended voltage retention.

FAQ

What is the minimum VCC required for data retention in R1LV0816ABG-7SI#B0?

The R1LV0816ABG-7SI#B0 guarantees data retention down to VCC = 1.5 V under specified conditions (e.g., CS2 ≤ 0.2 V or LB#/UB# ≥ VCC−0.2 V). This enables reliable operation during brownout events or coin-cell backup scenarios where main supply drops below 2.4 V but remains ≥1.5 V. Retention current stays below 20 µA at +85°C.

Does R1LV0816ABG-7SI#B0 require a clock signal or refresh controller?

No, the R1LV0816ABG-7SI#B0 is a true static RAM and requires neither a clock nor periodic refresh. Its internal latch-based memory cells retain data as long as power is applied and control signals meet setup/hold timing. This eliminates timing-critical refresh overhead in MCU/FPGA designs and reduces system-level power management complexity.

Can R1LV0816ABG-7SI#B0 operate with a 2.5 V supply?

Yes, the R1LV0816ABG-7SI#B0 is fully specified for 2.4–3.6 V operation, including 2.5 V nominal supplies. At 2.5 V, it meets all AC/DC specifications per the -7SI speed grade (70 ns access), supports TTL-compatible I/O thresholds, and delivers 1.2 µA typical standby current - making it ideal for mixed-voltage systems using 2.5 V logic rails.

What is the function of CS2 versus CS1# in R1LV0816ABG-7SI#B0?

In the R1LV0816ABG-7SI#B0, CS1# is the primary active-low chip select, while CS2 is an active-high secondary enable. Both must be asserted (CS1# = L, CS2 = H) for normal read/write operations. CS2 also controls the address buffer and enables data retention mode when deasserted (CS2 = L), allowing ultra-low-power standby independent of CS1# state.

Is R1LV0816ABG-7SI#B0 pin-compatible with the -5SI variant?

Yes, R1LV0816ABG-7SI#B0 and R1LV0816ABG-5SI share identical pinout, package (f-BGA48), and functional interface. The sole difference is access time: -5SI guarantees 55 ns, while -7SI guarantees 70 ns. They are drop-in replacements in layouts designed for the f-BGA48 footprint, though timing-critical systems must verify setup/hold margins against the slower -7SI specification.