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Renesas R1LV0816ABG-7SI#S0
- Part No.:
- R1LV0816ABG-7SI#S0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
R1LV0816ABG-7SI#S0.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 48TFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,893
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Product details
Overview
R1LV0816ABG-7SI#S0 from Renesas Electronics is an 8Mb low-power static RAM organized as 524,288 words × 16 bits, fabricated in 0.15 µm CMOS/TFT technology, operating from 2.4V to 3.6V, with 70 ns access time and -40°C to +85°C industrial temperature range - used for battery-backed memory in portable instrumentation and embedded controllers.
For engineers reviewing the R1LV0816ABG-7SI#S0 datasheet, R1LV0816ABG-7SI#S0 pinout, R1LV0816ABG-7SI#S0 application, or R1LV0816ABG-7SI#S0 equivalent, key selection criteria include single-supply operation, ultra-low standby current (1.2 µA typ. at 3.0V), TTL-compatible I/O, byte-select capability (LB#/UB#), and f-BGA package compatibility with high-density PCB layouts.
Technical Context
This LPSRAM implements asynchronous, no-refresh operation with dual chip select (CS1#, CS2) and independent upper/lower byte enables (UB#, LB#) to support flexible memory expansion and partial-word writes. Its three-state bidirectional DQ0–DQ15 bus enables OR-tie data sharing across multiple devices without external logic.
The device uses a hierarchical decoder architecture with separate row/column decoding and sense/write amplifiers, supporting word, upper-byte, lower-byte, and output-disabled read/write modes per the operation table. Standby entry is triggered by CS2 low or CS1# high with CS2 high, enabling data retention down to 1.5V VCC.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 8 Mbit (524,288 × 16-bit) - supports 1MB of 16-bit wide data storage without address multiplexing |
| Supply voltage | 2.4V to 3.6V - compatible with both 2.5V and 3.3V system rails; no level-shifting required |
| Access time | 70 ns max - guarantees deterministic read latency for real-time control loops and firmware execution |
| Standby current | 1.2 µA typical at 3.0V/25°C - enables multi-year battery backup in power-critical applications |
| Operating temperature | -40°C to +85°C - qualified for industrial-grade embedded systems including automotive body electronics |
| Data retention VCC | 1.5V min - maintains stored data during brown-out or battery-switchover events |
| Package | 48-ball f-BGA (7.5 mm × 8.5 mm, 0.75 mm pitch) - provides compact footprint and fine-pitch routing for space-constrained designs |
Pinout & Package
48-ball fine-pitch BGA (f-BGA), 7.5 mm × 8.5 mm body, 0.75 mm ball pitch, 6×8 array (PTBG0048HB-A).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Vcc | Power supply | Main 2.4–3.6V supply rail; decoupling required within 10 mm of ball |
| Vss | Ground | Dedicated ground reference for core and I/O; two balls provided for low-impedance return path |
| A0–A18 | Address input | 19-bit address bus supporting full 524,288-word addressing; no multiplexing |
| DQ0–DQ15 | Data I/O | Bidirectional 16-bit data bus with three-state control; supports OR-tie for shared-bus architectures |
| CS1#, CS2 | Chip select | Two-level decode: CS1# active-low primary enable; CS2 active-high secondary enable for hierarchical banking |
| WE#, OE#, LB#, UB# | Control inputs | Asynchronous write enable, output enable, and byte-select controls - enable partial writes and bus contention avoidance |
| NC | No connection | Three unconnected balls (A1, A14, A17); must be left floating or grounded per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates external refresh circuitry and timing overhead - simplifies firmware and reduces system power |
| TTL-compatible I/O | VIH = 2.2V min (at VCC ≥ 2.7V), VIL = 0.4V max - interoperable with legacy 5V-tolerant microcontrollers via pull-up or direct interface |
| Byte-select write control | Independent LB# and UB# pins allow 8-bit writes to either half of the 16-bit word - avoids read-modify-write cycles |
| Low standby current | 1.2 µA typical at 3.0V/25°C - extends battery life in always-on monitoring nodes and RTC-backed memory systems |
| Data retention mode | Operates down to 1.5V VCC with ≤20 µA retention current at +85°C - sustains memory contents during deep sleep or power-fail conditions |
Applications
| Portable Medical Monitors | Industrial PLC Data Logging |
|---|---|
|
Use Scenario: Battery-powered ECG or SpO₂ monitor storing waveform buffers and calibration data between host uploads. IC Role / Device Role / Timing Role: Non-volatile buffer memory retaining critical patient data during battery replacement or AC dropout. Use Value: 1.5V data retention threshold and 1.2 µA standby current enable >5-year battery life with SRAM-based data persistence. |
Use Scenario: Compact programmable logic controller capturing sensor history and alarm logs in factory automation cabinets. IC Role / Device Role / Timing Role: High-reliability scratchpad memory for cyclic data acquisition, immune to refresh-induced jitter or corruption. Use Value: 70 ns access time ensures deterministic response to 10 kHz sampling interrupts; f-BGA package fits tight I/O module footprints. |
| Automotive Body Control Modules | Networked Smart Sensors |
|
Use Scenario: Door module storing seat position presets, mirror angles, and lighting profiles across ignition cycles. IC Role / Device Role / Timing Role: Low-voltage SRAM interfaced directly to 3.3V MCU GPIOs, retaining configuration during stop/start events. Use Value: -40°C to +85°C rating and 2.4–3.6V supply range match automotive battery transients and under-hood thermal environments. |
Use Scenario: Wireless environmental sensor node aggregating temperature/humidity samples before BLE transmission bursts. IC Role / Device Role / Timing Role: Energy-efficient memory staging buffer minimizing active MCU time and RF subsystem duty cycle. Use Value: Byte-select writes reduce energy per sample update; OR-tie capability allows shared bus with other sensors without arbitration logic. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-70ZSXI | 8Mb (1M×8) organization, 70 ns access, 2.2–3.6V supply, 48-pin TSOP-II - different density format and package | Requires board redesign for 8-bit vs. 16-bit bus; lacks LB#/UB# byte control | Select when 8-bit microcontroller interface or TSOP layout reuse is prioritized over byte-select flexibility |
| IS61WV51216BLL-70BLI | 8Mb (512K×16), 70 ns, 3.3V only (2.7–3.6V), 48-ball f-BGA - identical pinout but narrower VCC range | Not suitable for 2.4–2.7V operation; higher typical standby current (2 µA) | Choose for drop-in replacement where 3.3V-only supply and same package are mandatory, accepting reduced low-VCC margin |
Compared with R1LV0816ABG-7SI#S0, CY62167EV30LL-70ZSXI requires bus-width adaptation and loses byte-select efficiency, while IS61WV51216BLL-70BLI matches the f-BGA footprint but sacrifices 2.4V operation and ultra-low standby performance - making R1LV0816ABG-7SI#S0 optimal for battery-backed 16-bit systems needing wide voltage tolerance.
Availability
R1LV0816ABG-7SI#S0 is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data logging, automotive body control modules, and networked smart sensors requiring stable component supply across extended product lifecycles.
Supply support for R1LV0816ABG-7SI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
R1LV0816ABG-7SI#S0 belongs to Renesas' Advanced LPSRAM product line, engineered specifically for ultra-low-power, battery-operated, and battery-backup memory applications where refresh-free operation and sub-microamp standby are critical.
FAQ
What is the minimum supply voltage required for data retention in R1LV0816ABG-7SI#S0?
The R1LV0816ABG-7SI#S0 maintains data integrity down to 1.5V VCC in retention mode, as specified in the Data Retention Characteristics table. This enables reliable operation during brown-out conditions or battery voltage sag, provided CS2 is held low or appropriate control pin states are maintained per the retention entry conditions.
Does R1LV0816ABG-7SI#S0 support true 16-bit word writes without read-modify-write sequences?
Yes, the R1LV0816ABG-7SI#S0 supports full 16-bit word writes when both LB# and UB# are asserted low simultaneously. The operation table confirms "Word write" mode with Din applied to DQ0–DQ15, eliminating the need for read-modify-write cycles and reducing write latency and power consumption.
Can R1LV0816ABG-7SI#S0 be interfaced directly with a 5V microcontroller?
R1LV0816ABG-7SI#S0 inputs are TTL-compatible (VIH ≥ 2.2V, VIL ≤ 0.4V), allowing safe connection to 5V-tolerant MCU GPIOs configured for 3.3V I/O. However, its outputs swing only to VCC (max 3.6V), so a level shifter is required if driving true 5V logic thresholds.
What is the maximum operating current of R1LV0816ABG-7SI#S0 during active read cycles?
The R1LV0816ABG-7SI#S0 draws up to 35 mA average operating current (ICC1) under worst-case conditions: minimum cycle time, 100% duty, and zero I/O load. Typical active current is 20 mA, measured at VCC = 3.0V and TA = 25°C per DC Characteristics.
Is the pinout of R1LV0816ABG-7SI#S0 compatible with other Renesas LPSRAMs like R1LV0816ABG-5SI?
Yes, R1LV0816ABG-7SI#S0 shares identical pinout, package (48-ball f-BGA), and signal assignment with R1LV0816ABG-5SI. The only functional difference is access time (70 ns vs. 55 ns) and corresponding VCC range - both parts are mechanically and electrically interchangeable in layouts designed for the common footprint.
R1LV0816ABG-7SI#S0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.4V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TFBGA (7.5x8.5)
R1LV0816ABG-7SI#S0 FAQ
1.How can I place an order for R1LV0816ABG-7SI#S0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0816ABG-7SI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0816ABG-7SI#S0 reliable?
The price and inventory of R1LV0816ABG-7SI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0816ABG-7SI#S0 is usually 5 days.
3.What payment methods are accepted for R1LV0816ABG-7SI#S0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0816ABG-7SI#S0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0816ABG-7SI#S0?
R1LV0816ABG-7SI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0816ABG-7SI#S0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0816ABG-7SI#S0?
For technical support, including R1LV0816ABG-7SI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0816ABG-7SI#S0 requirements.
6.How does Aetrix verify that R1LV0816ABG-7SI#S0 is sourced from the original manufacturer or authorized distributors?
All R1LV0816ABG-7SI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0816ABG-7SI#S0 meets industry standards.
7.What is the process for return or replacement of R1LV0816ABG-7SI#S0?
All R1LV0816ABG-7SI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0816ABG-7SI#S0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0816ABG-7SI#S0 part is unused and in its original packaging.
Return procedure for R1LV0816ABG-7SI#S0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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