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Renesas R1LV0816ASA-7SI#B0

Part No.:
R1LV0816ASA-7SI#B0
Manufacturer:
Renesas
Category:
Memory
Package:
48-TFSOP (0.724", 18.40mm Width)
Datasheet:
AetrixR1LV0816ASA-7SI#B0.pdf
Description:
IC SRAM 8MBIT PARALLEL 48TSOP I
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:245

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Product details

Overview

R1LV0816ASA-7SI#B0 from Renesas Electronics is an 8Mb low-power static RAM organized as 524,288 × 16-bit or 1M × 8-bit, fabricated in 0.15μm CMOS/TFT process. It operates from a single 2.4–3.6V supply, delivers 70ns access time, draws only 1.2μA standby current at 3.0V, and supports industrial temperature range (−40°C to +85°C). It serves as non-volatile backup memory in battery-powered instrumentation and portable data loggers.

For engineers reviewing the R1LV0816ASA-7SI#B0 datasheet, R1LV0816ASA-7SI#B0 pinout, R1LV0816ASA-7SI#B0 application, or R1LV0816ASA-7SI#B0 equivalent, this page provides verified package mapping, byte/word mode timing behavior, TTL-compatible I/O interface details, and validated alternative SRAMs for low-voltage embedded memory upgrades.

Technical Context

The R1LV0816ASA-7SI#B0 implements dual-mode addressing: A0–A18 for word mode (524k × 16), and A−1–A18 for byte mode (1M × 8), with BYTE# controlling mode selection. Its architecture uses separate LB#/UB# controls for 8-bit sub-word writes and OR-tie capable three-state outputs for bus sharing.

It requires no refresh or clock signal, supports simultaneous chip select (CS1#, CS2) and write enable (WE#) control, and enters ultra-low-power data retention mode when CS2 is asserted low or CS1# is high with specific voltage thresholds - enabling operation down to 1.5V VCC while retaining stored data.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 8 Mbit (524,288 × 16 or 1,048,576 × 8)
Supply Voltage Range 2.4 V to 3.6 V - enables direct interface with 2.5V/3.3V logic without level shifters
Access Time 70 ns - defines maximum read cycle speed for deterministic timing in real-time control loops
Standby Current 1.2 μA at 3.0 V / 25°C - ensures multi-year battery life in always-on sensor nodes
Operating Temperature −40°C to +85°C - qualified for industrial-grade deployment in uncontrolled environments
Data Retention Voltage 1.5 V minimum - allows memory state preservation during brown-out or backup battery operation
Package 48-pin TSOP (I), 12 mm × 20 mm, 0.5 mm pitch - compatible with standard SMT reflow profiles and high-density PCB layouts

Pinout & Package

48-pin thin small outline package (TSOP-I), 12 mm × 20 mm body, 0.50 mm lead pitch, normal-bend leads. Pin 1 marked by notch or dot; pin numbering counterclockwise from top-left corner.

Pin/Terminal Circuit Role Design Meaning
A0–A18 Address input (word mode) 19-bit address bus for 524k-word addressing; A−1 used only in byte mode
DQ0–DQ15 Data input/output Bidirectional 16-bit data bus; three-state controlled by OE#, LB#, UB#
CS1#, CS2 Chip select inputs CS1# active-low primary enable; CS2 enables retention mode and buffers
WE#, OE#, LB#, UB# Control inputs WE# initiates write; OE# enables output drivers; LB#/UB# select byte lanes
BYTE# Mode configuration Low = byte mode (A−1 valid); high = word mode (A0–A18 valid)
Vcc, Vss Power and ground Single 2.4–3.6V supply; decoupling required within 10 mm of Vcc/Vss pair
NC No connect Pins 9, 10, 13 are internally unconnected - must remain floating or grounded per layout guidelines

Key Features

Feature Design Value
No refresh or clock required Eliminates external timing circuitry and reduces system BOM cost and power overhead
TTL-compatible I/O levels Direct interfacing with legacy 5V-tolerant microcontrollers and FPGAs without level translation
OR-tie capable outputs Enables parallel connection of multiple R1LV0816ASA-7SI#B0 devices on shared data bus without contention
Byte/word mode flexibility Supports both 8-bit and 16-bit host interfaces via single BYTE# pin - simplifies design reuse across platforms
Ultra-low standby current 1.2 μA typical at 3.0 V enables >5-year operation on coin-cell batteries in maintenance-free deployments

Applications

Portable Data Logger Industrial PLC I/O Module

Use Scenario: Battery-powered environmental sensor node recording temperature, humidity, and pressure at 10-second intervals for 30 days.

IC Role / Device Role / Timing Role: Primary working memory storing buffered samples before transmission; retains data during sleep cycles using VCC ≥1.5V.

Use Value: 1.2μA standby current extends CR2032 battery life beyond 3 years; 70ns access supports burst reads during wake-up without CPU wait states.

Use Scenario: Modular I/O expansion unit in factory automation systems requiring deterministic response to fieldbus commands.

IC Role / Device Role / Timing Role: Local buffer memory for analog input sampling and digital output staging; synchronized via CS1#/WE# with controller's timing engine.

Use Value: −40°C to +85°C rating ensures reliability in unconditioned control cabinets; byte-mode support simplifies integration with 8-bit microcontroller peripherals.

Medical Diagnostic Handheld Smart Energy Meter

Use Scenario: Portable ultrasound probe storing waveform snapshots and calibration coefficients between sessions.

IC Role / Device Role / Timing Role: Non-volatile scratchpad memory preserving settings and last-acquired image metadata during power cycling.

Use Value: Data retention down to 1.5V VCC prevents loss during battery swap; 48-pin TSOP footprint fits compact handheld PCBs with minimal routing congestion.

Use Scenario: Revenue-grade electricity meter logging consumption data every 15 minutes with tamper-resistant storage.

IC Role / Device Role / Timing Role: Secure intermediate storage for encrypted usage records prior to secure transfer to concentrator.

Use Value: Dual CS1#/CS2 control enables hardware-enforced isolation between active and retention modes; 0.5mm pitch supports high-yield automated assembly.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-voltage SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY62167EV30LL-70ZSXI 70ns access, 2.2–3.6V supply, 1MB × 16 organization, 48-pin TSOP-II package Higher VIL threshold (0.6V vs. 0.4V) and different pinout - requires PCB redesign Preferred where higher noise immunity on control lines is critical and layout revision is acceptable
IS61LV51216AL-70TQLI 70ns access, 2.4–3.6V supply, 512k × 16 organization, 44-pin SOJ package Smaller density (4Mb), SOJ packaging incompatible with TSOP reflow profile and board space Suitable for cost-sensitive designs where 4Mb capacity suffices and through-hole or alternate SMT process is available

Compared with CY62167EV30LL-70ZSXI and IS61LV51216AL-70TQLI, the R1LV0816ASA-7SI#B0 uniquely combines 8Mb density, 48-pin TSOP-I compatibility, and 1.5V data retention - making it optimal for space-constrained, battery-backed industrial memory upgrades without layout change.

Availability

R1LV0816ASA-7SI#B0 is available at Aetrix Electronics and suitable for portable instrumentation, industrial PLC modules, medical handhelds, smart energy meters, and battery-backed data loggers requiring stable component supply across extended product lifecycles.

Supply support for R1LV0816ASA-7SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LV0816ASA series was designed specifically for low-voltage, low-power static RAM applications in battery-operated and energy-conscious embedded systems - emphasizing data retention, wide supply tolerance, and simplified interface.

FAQ

What is the minimum supply voltage required to retain data in R1LV0816ASA-7SI#B0?

The R1LV0816ASA-7SI#B0 maintains stored data down to 1.5V VCC under specified conditions (CS2 ≤ 0.2V or CS1# ≥ VCC−0.2V). This retention capability is confirmed in the Data Retention Characteristics table on page 15 of the official Renesas datasheet REJ03C0395-0100. Below 1.5V, data integrity is not guaranteed.

Does R1LV0816ASA-7SI#B0 support true 8-bit operation, and how is it configured?

Yes, the R1LV0816ASA-7SI#B0 supports native 8-bit operation via byte mode. When BYTE# is driven low, address line A−1 becomes active and DQ0–DQ7 function as the sole data path, enabling 1M × 8 organization. This mode is explicitly defined in the Pin Description and Operation Table sections of the datasheet.

What is the maximum operating current of R1LV0816ASA-7SI#B0 during active read/write cycles?

The R1LV0816ASA-7SI#B0 draws up to 35mA average operating current (ICC1) under worst-case conditions: minimum cycle time, 100% duty, and zero I/O load. This value is specified in the DC Characteristics table (page 6) and applies across the full 2.4–3.6V supply range and −40°C to +85°C temperature span.

Can R1LV0816ASA-7SI#B0 be used in place of R1LV0816ASA-5SI#B0 without hardware changes?

No - while pinout and functionality are identical, the R1LV0816ASA-7SI#B0 has 70ns access time versus 55ns for the -5SI variant. Substituting the -7SI into a design timed for 55ns may cause timing violations in high-speed read/write sequences. The -7SI is only safe for replacement if the host system's timing margins accommodate the slower access.

Is R1LV0816ASA-7SI#B0 compliant with RoHS and lead-free soldering standards?

Yes, the R1LV0816ASA-7SI#B0 is RoHS-compliant and qualified for lead-free reflow soldering per JEDEC J-STD-020. The "#B0" suffix denotes lead-free, halogen-free packaging, and the device meets EU RoHS Directive 2011/65/EU requirements as stated in Renesas' environmental compliance documentation.

R1LV0816ASA-7SI#B0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
48-TFSOP (0.724", 18.40mm Width)
Packaging:
Bulk
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM
Memory Size:
8Mbit
Memory Organization:
1M x 8, 512K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
70ns
Access Time:
70 ns
Voltage - Supply:
2.4V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-TSOP I

R1LV0816ASA-7SI#B0 FAQ

1.How can I place an order for R1LV0816ASA-7SI#B0 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1LV0816ASA-7SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1LV0816ASA-7SI#B0 reliable?

The price and inventory of R1LV0816ASA-7SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0816ASA-7SI#B0 is usually 5 days.

3.What payment methods are accepted for R1LV0816ASA-7SI#B0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0816ASA-7SI#B0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1LV0816ASA-7SI#B0?

R1LV0816ASA-7SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1LV0816ASA-7SI#B0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LV0816ASA-7SI#B0?

For technical support, including R1LV0816ASA-7SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0816ASA-7SI#B0 requirements.

6.How does Aetrix verify that R1LV0816ASA-7SI#B0 is sourced from the original manufacturer or authorized distributors?

All R1LV0816ASA-7SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0816ASA-7SI#B0 meets industry standards.

7.What is the process for return or replacement of R1LV0816ASA-7SI#B0?

All R1LV0816ASA-7SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0816ASA-7SI#B0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LV0816ASA-7SI#B0 part is unused and in its original packaging.

Return procedure for R1LV0816ASA-7SI#B0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

R1LV0816ASA-7SI#B0 Tags

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