Renesas R1LV0816ASA-7SI#S0

Overview

R1LV0816ASA-7SI#S0 from Renesas Electronics is an 8Mb low-power static RAM organized as 524,288 words × 16 bits or 1M words × 8 bits, operating from a single 2.4–3.6V supply with 70 ns access time and -40°C to +85°C industrial temperature range. It serves as non-volatile backup memory in battery-powered instrumentation and embedded control systems requiring zero-refresh operation and ultra-low standby current.

For engineers reviewing the R1LV0816ASA-7SI#S0 datasheet, R1LV0816ASA-7SI#S0 pinout, R1LV0816ASA-7SI#S0 application, or R1LV0816ASA-7SI#S0 equivalent, key selection criteria include its 48-pin TSOP-I package, byte/word mode flexibility via BYTE#, dual chip select architecture (CS1#/CS2), and 1.2 µA typical standby current at 3.0V - critical for long-life portable and remote-sensing designs.

Technical Context

The R1LV0816ASA-7SI#S0 implements a dual-mode memory array supporting both 16-bit word and 8-bit byte addressing through dedicated LB#/UB# and BYTE# control inputs. Its internal architecture includes independent column decoders, sense/write amplifiers, and TTL-compatible I/O buffers with three-state outputs enabling OR-tie bus configurations.

Operation relies on asynchronous control logic with no clocks or refresh cycles required. Standby entry is triggered by asserting CS2 low or CS1# high while maintaining BYTE# in valid state, reducing current to ≤20 µA across full temperature range - optimized for data retention during battery backup scenarios.

Key Specifications

Pinout & Package

48-pin plastic thin small outline package (TSOP-I), 12 mm × 20 mm body size, 0.50 mm pin pitch, normal-bend leads. Pin 1 marked by notch or dot; pin numbering follows standard counter-clockwise layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power SRAM applications.

Compared with IS61LV25616AL-10TLI and AS6C4008-70TIN, the R1LV0816ASA-7SI#S0 uniquely balances ultra-low standby current, wide 2.4–3.6V operation, and hardware-configurable memory organization - making it optimal for battery-constrained, thermally variable, and multi-processor platform applications.

Availability

R1LV0816ASA-7SI#S0 is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data loggers, and automotive infotainment head units requiring stable component supply across extended product lifecycles.

Supply support for R1LV0816ASA-7SI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LV0816ASA family was designed specifically for low-voltage, low-power static RAM applications where battery backup, simple interfacing, and compact mounting area are critical - targeting instrumentation, remote sensors, and embedded control subsystems.

FAQ

What is the maximum operating frequency supported by the R1LV0816ASA-7SI#S0?

The R1LV0816ASA-7SI#S0 is an asynchronous SRAM with no internal clock; its maximum effective frequency is determined by access time. With a 70 ns access time, it supports up to ~14.3 MHz random read/write cycles in ideal conditions. Actual throughput depends on system-level timing margins, bus loading, and controller setup/hold compliance - verified using tRC (70 ns) and tAA (70 ns) parameters from the datasheet.

Does the R1LV0816ASA-7SI#S0 require external refresh circuitry?

No, the R1LV0816ASA-7SI#S0 is a true static RAM and does not require any refresh cycles. Its CMOS latch-based memory cells retain data indefinitely as long as power is applied within specification (2.4–3.6 V). This eliminates refresh overhead in firmware and removes associated timing constraints - a key advantage over DRAM or pseudo-SRAM solutions.

How does the BYTE# pin affect address mapping in the R1LV0816ASA-7SI#S0?

When BYTE# is high, the R1LV0816ASA-7SI#S0 operates in 16-bit word mode using A0–A18 for 524,288-word addressing. When BYTE# is low, it switches to 8-bit byte mode using A-1–A18, enabling 1,048,576-byte addressing. This hardware-selectable mode allows one PCB layout to support both 8-bit and 16-bit microcontrollers without redesign - A-1 is physically connected to pin 24 (DQ15/A-1).

Can the R1LV0816ASA-7SI#S0 retain data during complete power removal?

No - the R1LV0816ASA-7SI#S0 requires continuous power to retain data. However, it supports data retention down to 1.5 V Vcc, allowing it to preserve contents during brown-out, battery swap, or controlled power-down sequences when backed by a capacitor or secondary cell. True non-volatility requires external EEPROM or FRAM; this device functions as low-power volatile memory with extended retention voltage range.

What is the purpose of the dual chip select signals (CS1# and CS2) in the R1LV0816ASA-7SI#S0?

CS1# (active-low) and CS2 (active-high) provide hierarchical chip enable control in the R1LV0816ASA-7SI#S0. CS1# is the primary select; CS2 acts as a secondary qualifier - both must be asserted (CS1# = L, CS2 = H) for normal read/write operations. This allows daisy-chaining or bank selection in multi-SRAM systems, reduces address decoder complexity, and enables selective standby by deasserting either signal independently.