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Renesas R1LV0816ASB-5SI#B0
- Part No.:
- R1LV0816ASB-5SI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
R1LV0816ASB-5SI#B0.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:4,368
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Product details
Overview
R1LV0816ASB-5SI from Renesas Electronics is an 8Mb low-power static RAM organized as 524,288 words × 16 bits, fabricated in 0.15 µm CMOS/TFT process. It operates from a single 2.4–3.6 V supply, delivers 55 ns access time, and draws only 1.2 µA standby current at 3.0 V - making it ideal for battery-backed memory systems in portable instrumentation and industrial data loggers.
For engineers reviewing the R1LV0816ASB-5SI datasheet, R1LV0816ASB-5SI pinout, R1LV0816ASB-5SI application, or R1LV0816ASB-5SI equivalent, key selection criteria include its TSOP (II) 44-pin package, TTL-compatible I/O, byte-selectable write capability via LB#/UB#, and zero-refresh operation in embedded control and backup memory designs.
Technical Context
This LPSRAM uses asynchronous address decoding with no internal clocks or refresh circuitry. Its dual-byte enable architecture (LB# and UB#) enables independent 8-bit writes without external logic, while three-state outputs support OR-tie bus configurations.
The device implements full TTL-level compatibility on all inputs and outputs, supports data retention down to 1.5 V VCC, and maintains stable operation across –40°C to +85°C ambient temperature with guaranteed timing under worst-case voltage (2.4 V) and temperature conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 8 Mbit (524,288 × 16), enabling compact 1 MB word-addressable storage |
| Access time | 55 ns max at VCC = 2.4–3.6 V, supporting high-speed microcontroller interfaces |
| Supply voltage | 2.4–3.6 V single rail, compatible with 2.5 V and 3.3 V system domains |
| Standby current | 1.2 µA typ. at 3.0 V/25°C, critical for multi-year battery operation |
| Operating temperature | –40°C to +85°C, qualified for industrial-grade embedded deployment |
| Data retention voltage | 1.5–3.6 V, allowing low-voltage hold mode during power loss |
| I/O interface | TTL-compatible inputs/outputs, eliminating level-shifter requirements |
Pinout & Package
Package: 44-pin plastic TSOP (II), 11.76 mm × 18.41 mm, normal-bend type (44P3F), surface-mount compatible with standard reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address input | 19-bit address bus supporting full 524,288-word addressing |
| DQ0–DQ15 | Bi-directional data I/O | 16-bit common bus with three-state control for shared memory expansion |
| CS# | Chip select | Active-low enable controlling all internal operations and output Z-state |
| WE# | Write enable | Active-low signal initiating write cycles; latches data on falling edge |
| OE# | Output enable | Active-low control for output buffer; prevents bus contention during read |
| LB#, UB# | Byte enable | Independent lower/upper byte write control - eliminates glue logic for 8-bit subsystems |
| VCC, VSS | Power/Ground | Single 2.4–3.6 V supply pair; two VCC and two VSS pins reduce IR drop and noise |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Asynchronous SRAM architecture eliminates DRAM-style refresh overhead and timing constraints |
| Low-voltage data retention | Maintains stored data down to 1.5 V VCC, enabling seamless backup during brownout events |
| Byte-selectable write | LB# and UB# allow independent 8-bit writes without external byte masking logic |
| TTL-compatible signaling | Direct interfacing with legacy 5 V-tolerant microcontrollers and FPGAs without level translation |
| OR-tie capable outputs | Three-state DQ lines support wired-OR bus architectures for shared memory expansion |
Applications
| Portable Data Logger | Industrial PLC Memory Buffer |
|---|---|
Use Scenario: Battery-powered environmental sensor node recording temperature/humidity every 5 seconds for 30 days. IC Role / Device Role / Timing Role: Primary non-volatile backup memory holding last 10,000 samples during main power loss. Use Value: 1.2 µA standby current extends coin-cell life beyond 5 years; 55 ns access enables fast burst writes from ADC controller. | Use Scenario: Real-time I/O status mirroring in a DIN-rail mounted programmable logic controller with 24 V DC field power. IC Role / Device Role / Timing Role: Fast-access scratchpad memory for cyclic scan buffers and retentive timer values. Use Value: TTL compatibility ensures direct connection to 3.3 V FPGA I/O banks; -40°C to +85°C rating guarantees operation in unconditioned control cabinets. |
| Medical Diagnostic Handheld | Automotive Telematics Black Box |
Use Scenario: Portable ultrasound probe storing waveform snapshots and calibration coefficients between host transfers. IC Role / Device Role / Timing Role: Low-power SRAM buffer isolating sensitive analog front-end from noisy USB host communication. Use Value: Zero-refresh operation prevents timing jitter in real-time sampling; 44-pin TSOP fits tight PCB space behind OLED display module. | Use Scenario: Crash event recorder capturing CAN bus messages and GPS timestamps during vehicle impact. IC Role / Device Role / Timing Role: High-reliability volatile memory capturing pre-crash data when main ECU power fails. Use Value: Data retention down to 1.5 V allows >100 ms of valid capture after 12 V dropout; 55 ns read cycle supports rapid post-event dump over LIN. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 10 ns faster access (45 ns), higher standby current (2 µA typ.), same 44-pin TSOP (II) footprint | Better suited for high-throughput controllers where speed outweighs battery life | Select if system clock > 20 MHz and average active duty cycle exceeds 5% |
| AS6C4008-55TIN | Same 55 ns access, but 3.3 V only (3.0–3.6 V), higher ISB (5 µA typ.), identical pinout | Requires tighter VCC regulation; less suitable for wide-input battery systems | Choose when board already uses dedicated 3.3 V LDO and thermal budget permits higher leakage |
Compared with IS61LV25616AL-10TLI and AS6C4008-55TIN, the R1LV0816ASB-5SI uniquely balances ultra-low standby current (1.2 µA) with wide 2.4–3.6 V operation - making it optimal for energy-constrained, multi-supply industrial and portable systems where voltage headroom and battery longevity are primary constraints.
Availability
R1LV0816ASB-5SI is available at Aetrix Electronics and suitable for portable instrumentation, industrial PLCs, and automotive black box recorders requiring stable component supply across extended product lifecycles.
Supply support for R1LV0816ASB-5SI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV0816ASB series belongs to Renesas' Advanced LPSRAM product line, engineered specifically for battery-operated and backup-memory applications demanding zero-refresh operation, wide voltage range, and ultra-low standby power.
FAQ
What is the minimum supply voltage required for data retention in R1LV0816ASB-5SI?
The R1LV0816ASB-5SI supports data retention down to 1.5 V VCC when CS# or LB#/UB# are held high, enabling reliable memory hold during brownout conditions. This specification is verified per the Data Retention Characteristics table on page 14 of the REJ03C0387-0100 datasheet, with ICCDR ≤ 20 µA at +85°C and VCC = 3.0 V.
Does R1LV0816ASB-5SI require external refresh circuitry?
No, the R1LV0816ASB-5SI is a true static RAM and requires no refresh cycles or external timing control. Its asynchronous architecture uses only CS#, WE#, OE#, LB#, and UB# signals - eliminating refresh overhead, timing complexity, and associated power spikes found in DRAM-based solutions.
Can R1LV0816ASB-5SI be used with a 2.5 V microcontroller interface?
Yes, the R1LV0816ASB-5SI operates across 2.4–3.6 V and features TTL-compatible inputs and outputs. At 2.5 V supply, VIH is specified at 2.0 V min and VIL at 0.4 V max, ensuring robust logic-level interoperability with standard 2.5 V microcontrollers without level shifters.
What is the function of LB# and UB# pins on R1LV0816ASB-5SI?
LB# (Lower Byte Enable) and UB# (Upper Byte Enable) provide independent 8-bit write control for DQ0–DQ7 and DQ8–DQ15 respectively. When asserted low with CS# and WE#, they enable byte-selective writes - allowing efficient 8-bit peripheral interfacing without external byte-mask logic or data alignment overhead.
Is R1LV0816ASB-5SI pin-compatible with other 44-pin TSOP (II) SRAMs?
The R1LV0816ASB-5SI follows JEDEC-standard 44-pin TSOP (II) mechanical dimensions and pinout (44P3F), including identical placement of VCC, VSS, address, data, and control signals. However, functional equivalence must be confirmed per datasheet - e.g., IS61LV25616AL-10TLI shares the footprint but differs in timing and standby current.
R1LV0816ASB-5SI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
R1LV0816ASB-5SI#B0 FAQ
1.How can I place an order for R1LV0816ASB-5SI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0816ASB-5SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0816ASB-5SI#B0 reliable?
The price and inventory of R1LV0816ASB-5SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0816ASB-5SI#B0 is usually 5 days.
3.What payment methods are accepted for R1LV0816ASB-5SI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0816ASB-5SI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0816ASB-5SI#B0?
R1LV0816ASB-5SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0816ASB-5SI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0816ASB-5SI#B0?
For technical support, including R1LV0816ASB-5SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0816ASB-5SI#B0 requirements.
6.How does Aetrix verify that R1LV0816ASB-5SI#B0 is sourced from the original manufacturer or authorized distributors?
All R1LV0816ASB-5SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0816ASB-5SI#B0 meets industry standards.
7.What is the process for return or replacement of R1LV0816ASB-5SI#B0?
All R1LV0816ASB-5SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0816ASB-5SI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0816ASB-5SI#B0 part is unused and in its original packaging.
Return procedure for R1LV0816ASB-5SI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV0816ASB-5SI#B0 Tags
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