Renesas R1LV0816ASB-5SI#S0

Overview

R1LV0816ASB-5SI from Renesas Electronics is an 8Mb low-power static RAM organized as 524,288 words × 16 bits, fabricated in 0.15 µm CMOS/TFT technology. It operates from a single 2.4–3.6 V supply, delivers 55 ns access time, and draws only 1.2 µA standby current at 3.0 V - ideal for battery-backed memory subsystems in portable instrumentation and industrial controllers.

For engineers reviewing the R1LV0816ASB-5SI datasheet, R1LV0816ASB-5SI pinout, R1LV0816ASB-5SI application, or R1LV0816ASB-5SI equivalent, key selection criteria include its TSOP (II) 44-pin package, TTL-compatible I/O, byte-selectable write capability via LB#/UB#, and zero-refresh operation in embedded data logging and real-time control systems.

Technical Context

The R1LV0816ASB-5SI implements a fully asynchronous SRAM architecture with no internal clocks or refresh circuitry. Its address buffer, data I/O buffers, and byte-enable logic are all controlled directly by CS#, WE#, OE#, LB#, and UB# signals - enabling deterministic timing and simple glueless interfacing with microcontrollers and FPGAs.

It supports three distinct operational modes: word-wide (LB# and UB# both low), upper-byte-only (UB# low, LB# high), and lower-byte-only (LB# low, UB# high), with independent output enable (OE#) and chip select (CS#) allowing seamless memory expansion and bus sharing without external logic.

Key Specifications

Pinout & Package

Packaged in a 44-pin plastic TSOP (II) (11.76 mm × 18.41 mm, normal-bend type, 44P3F), the R1LV0816ASB-5SI uses a standard dual-row surface-mount footprint optimized for high-density PCB layouts and automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power parallel SRAM applications.

Compared with IS61LV51216AL-10TLI and AS6C8016-55PCN, the R1LV0816ASB-5SI offers the lowest standby current in its class and widest voltage range - making it uniquely suited for long-duration battery backup and mixed-voltage system integration without level translation.

Availability

R1LV0816ASB-5SI is available at Aetrix Electronics and suitable for industrial data loggers, portable medical monitors, programmable logic controllers, automotive telematics gateways, and battery-backed memory subsystems requiring stable component supply across extended product lifecycles.

Supply support for R1LV0816ASB-5SI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.

The R1LV0816ASB family was designed specifically for low-voltage, low-power parallel SRAM applications demanding zero-refresh operation, battery backup capability, and robust industrial temperature performance - targeting portable instrumentation and real-time control systems.

FAQ

What is the maximum operating frequency supported by the R1LV0816ASB-5SI?

The R1LV0816ASB-5SI is an asynchronous SRAM with no clock input; its performance is defined by access time, not frequency. With a 55 ns access time, it supports effective bus cycle rates up to approximately 18 MHz in worst-case read/write scenarios. System timing must comply with AC characteristics in the datasheet, including tRC (55 ns), tAA (55 ns), and tWC (55 ns). The R1LV0816ASB-5SI does not require clock generation or synchronization logic.

Does the R1LV0816ASB-5SI support true 16-bit word writes without external logic?

Yes, the R1LV0816ASB-5SI supports full 16-bit word writes natively. When both LB# and UB# are asserted low simultaneously, the device performs a word-wide write to DQ0–DQ15. This capability is confirmed in the Operation Table (Page 5) and eliminates the need for external byte masking logic or read-modify-write sequences. The R1LV0816ASB-5SI's internal data selector and write amplifier handle concurrent upper/lower byte updates in a single cycle.

Can the R1LV0816ASB-5SI retain data during complete power removal?

No - the R1LV0816ASB-5SI requires a minimum VCC of 1.5 V to retain data, as specified in the Data Retention Characteristics table (Page 14). It supports data retention only under brown-out or backup battery conditions, not full power-off. For zero-voltage retention, an external nonvolatile memory or capacitor-backed supply is required. The R1LV0816ASB-5SI's 1.2 µA standby current at 3.0 V enables multi-year retention on small backup batteries, but continuous VCC bias is mandatory.

Is the R1LV0816ASB-5SI pin-compatible with the R1LV0816ASB-7SI?

Yes - both R1LV0816ASB-5SI and R1LV0816ASB-7SI share identical pinout, package (44-pin TSOP II), and functional pin assignments. The sole difference is access speed: the -5SI variant guarantees 55 ns timing across its full voltage/temperature range, while the -7SI specifies 70 ns. Voltage ranges also differ slightly (-5SI: 2.7–3.6 V; -7SI: 2.4–2.7 V or 2.4–3.6 V per ordering info). The R1LV0816ASB-5SI may be used as a higher-performance drop-in replacement where timing margin permits.

What is the meaning of "normal-bend type" in the R1LV0816ASB-5SI package description?

"Normal-bend type" refers to the lead forming profile of the 44-pin TSOP (II) package: leads are bent downward at a standard 4–6° angle from the body, ensuring reliable coplanarity and solder joint formation during reflow. This distinguishes it from "reverse-bend" variants where leads curve upward. The R1LV0816ASB-5SI's 44P3F designation confirms compliance with JEDEC MO-141AB mechanical standards for normal-bend TSOP (II), enabling compatibility with standard SMT placement and inspection equipment.