Renesas R1LV0816ASB-5SK#B0

Overview

R1LV0816ASB-5SK#B0 from Renesas Electronics is an 8Mb low-power static RAM organized as 524,288 words × 16 bits, fabricated in 0.15 µm CMOS/TFT process, operating from a single 2.4–3.6 V supply with 55 ns access time and −40 to +85 °C industrial temperature range. It serves as nonvolatile-capable main memory or buffer in battery-backed instrumentation, portable medical devices, and legacy industrial controllers requiring zero-refresh operation.

For engineers reviewing the R1LV0816ASB-5SK#B0 datasheet, R1LV0816ASB-5SK#B0 pinout, R1LV0816ASB-5SK#B0 application, or R1LV0816ASB-5SK#B0 equivalent, key selection criteria include TTL-compatible I/O timing, byte-select write capability via LB#/UB#, standby current of 1.2 µA at 3.0 V, TSOP (II) 44-pin footprint compatibility, and data retention down to 1.5 V.

Technical Context

The R1LV0816ASB-5SK#B0 implements a fully asynchronous SRAM architecture with no internal clocks or refresh circuitry. Its address decoder supports full 19-bit addressing (A0–A18), and its dual-byte control (LB#/UB#) enables independent 8-bit writes without external logic.

Three-state bidirectional DQ lines (DQ0–DQ15) support OR-tie bus sharing, while CS#, OE#, and WE# jointly govern read/write cycles per the defined operation table. Data retention mode activates when CS# ≥ VCC−0.2 V or LB#/UB# ≥ VCC−0.2 V, reducing current to ≤20 µA at +85 °C.

Key Specifications

Pinout & Package

44-pin plastic TSOP (II), normal-bend type (44P3F), 11.76 mm × 18.41 mm body, 0.8 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-voltage asynchronous SRAM applications.

Compared with R1LV0816ASB-5SK#B0, the IS61LV51216AL-10TLI trades lower power for higher speed and narrower voltage tolerance, while the AS6C8016-55PCN sacrifices package compactness and standby efficiency for broader supply compatibility and through-hole prototyping support.

Availability

R1LV0816ASB-5SK#B0 is available at Aetrix Electronics and suitable for portable medical monitors, smart utility meters, and industrial PLC I/O modules requiring stable component supply, long-lifecycle support, and guaranteed traceability for safety-critical deployments.

Supply support for R1LV0816ASB-5SK#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LV0816ASB family delivers low-voltage, low-power asynchronous SRAMs optimized for battery-operated and space-constrained embedded systems where reliability, simplicity, and data retention are essential.

FAQ

What is the maximum operating frequency supported by the R1LV0816ASB-5SK#B0?

The R1LV0816ASB-5SK#B0 is an asynchronous SRAM with no internal clock; its timing is governed by access parameters-not frequency. With a 55 ns address access time (tAA), it supports bus interfaces up to approximately 18 MHz without wait states. System-level timing must respect all AC specifications including tCW, tWP, and tOH, as defined in the REJ03C0387-0100 datasheet. The R1LV0816ASB-5SK#B0 does not specify or require a clock signal.

Does the R1LV0816ASB-5SK#B0 support true 16-bit word writes?

Yes, the R1LV0816ASB-5SK#B0 supports full 16-bit word writes when both LB# and UB# are asserted low simultaneously. This is confirmed in the Operation Table on page 5 of the REJ03C0387-0100 datasheet, where "Word write" is explicitly defined for CS# = L, WE# = L, LB# = L, UB# = L. The R1LV0816ASB-5SK#B0 also supports independent lower- and upper-byte writes, enabling flexible data alignment.

Can the R1LV0816ASB-5SK#B0 retain data during complete power loss?

The R1LV0816ASB-5SK#B0 retains data only while VCC remains within 1.5–3.6 V and either CS# or LB#/UB# is held at ≥ VCC−0.2 V (per page 14 data retention conditions). It does not retain data at 0 V-external backup power (e.g., coin cell or supercapacitor) is required for true zero-VCC retention. The R1LV0816ASB-5SK#B0's 1.2 µA standby current at 3.0 V enables years of retention with small backup sources.

Is the R1LV0816ASB-5SK#B0 RoHS compliant and lead-free?

Yes, the R1LV0816ASB-5SK#B0 is RoHS compliant and lead-free. Per Renesas documentation (including product change notices and packaging markings), the "#B0" suffix denotes lead-free, halogen-free, and RoHS-compliant construction. The device meets EU Directive 2011/65/EU and is compatible with standard Pb-free reflow profiles (J-STD-020).

How does the R1LV0816ASB-5SK#B0 handle bus contention during read-modify-write sequences?

The R1LV0816ASB-5SK#B0 prevents bus contention using OE#-controlled three-state outputs and strict timing for tOHZ (output disable to high-Z, max 20 ns) and tCHZ (chip deselect to high-Z, max 20 ns). During read-modify-write, asserting OE# high before initiating the write cycle ensures DQ lines enter high-impedance state, eliminating conflict with driving peripherals. The R1LV0816ASB-5SK#B0's defined tOHZ and tCHZ guarantee clean bus release before subsequent writes.