Renesas R1LV0816ASB-7SI#S0

Overview

R1LV0816ASB-7SI#S0 from Renesas Electronics is an 8Mb low-voltage static RAM organized as 524,288 words × 16 bits, fabricated in 0.15 µm CMOS/TFT process. It operates from a single 2.4–3.6 V supply, delivers 70 ns access time, draws only 1.2 µA standby current at 3.0 V, and supports battery-backed memory applications in portable instrumentation and industrial controllers.

For engineers reviewing the R1LV0816ASB-7SI#S0 datasheet, R1LV0816ASB-7SI#S0 pinout, R1LV0816ASB-7SI#S0 application, or R1LV0816ASB-7SI#S0 equivalent, key selection criteria include its TSOP (II) 44-pin package, byte-selectable 16-bit I/O, TTL-compatible interface, no-refresh operation, and data retention down to 1.5 V.

Technical Context

This LPSRAM implements asynchronous, non-volatile-retentive SRAM architecture with independent upper/lower byte enables (UB#/LB#), chip select (CS#), write enable (WE#), and output enable (OE#) for flexible memory expansion. Its block diagram confirms full address decoding (A0–A18), dual DQ buffers, and sense/write amplifiers supporting word, upper-byte, and lower-byte read/write operations without clocks or refresh circuitry.

All inputs and outputs are TTL-compatible across the full operating voltage range (2.4–3.6 V), and the device enters ultra-low-power standby mode when CS# is high or both LB# and UB# are high - enabling seamless integration into power-sensitive embedded systems requiring stable data retention during sleep cycles.

Key Specifications

Pinout & Package

Packaged in a 44-pin plastic TSOP (II) (11.76 mm × 18.41 mm, normal-bend type, 44P3F), the R1LV0816ASB-7SI#S0 uses surface-mount footprint optimized for high-density PCB layouts and automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-voltage SRAM applications.

Compared with CY62167EV30LL-70ZSXI and IS61LV51216AL-70TQLI, the R1LV0816ASB-7SI#S0 uniquely supports 2.4 V operation and matches the exact 44-pin TSOP (II) pinout defined in Renesas REJ03C0387-0100, enabling direct substitution in existing battery-powered industrial designs without voltage rail or layout changes.

Availability

R1LV0816ASB-7SI#S0 is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, and smart meter firmware caches requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for R1LV0816ASB-7SI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.

The R1LV0816ASB family was designed specifically for low-power, battery-operated memory applications demanding simple parallel interfacing, zero-refresh operation, and robust data retention - targeting portable instrumentation, industrial controllers, and energy metering systems.

FAQ

What is the minimum supply voltage required for data retention in the R1LV0816ASB-7SI#S0?

The R1LV0816ASB-7SI#S0 guarantees data retention down to 1.5 V, as specified in the Data Retention Characteristics table (Page 14). This allows continued memory hold during deep brown-out conditions or when powered solely by a backup capacitor or coin cell, provided CS# or LB#/UB# are held high to enter retention mode.

Does the R1LV0816ASB-7SI#S0 require external refresh circuitry?

No, the R1LV0816ASB-7SI#S0 is a true static RAM and requires no refresh cycles. Its architecture uses flip-flop-based memory cells, eliminating the need for periodic refresh signals - simplifying system design and reducing MCU overhead compared to DRAM or pseudo-SRAM solutions.

Can the R1LV0816ASB-7SI#S0 be used with a 5 V microcontroller interface?

The R1LV0816ASB-7SI#S0 inputs are TTL-compatible (VIH ≥ 2.2 V, VIL ≤ 0.4 V), so they accept 5 V logic levels safely when VCC is ≥2.7 V. However, its outputs swing only to VCC − 0.2 V (min), so direct connection to 5 V-tolerant inputs is acceptable, but driving pure 5 V CMOS loads may require external level translation for VOL/VOL2 compliance.

What is the maximum operating current of the R1LV0816ASB-7SI#S0 during active read cycles?

The R1LV0816ASB-7SI#S0 draws up to 35 mA average operating current (ICC1) under worst-case conditions: minimum cycle time, 100% duty cycle, and zero I/O load. Typical active current is 20 mA, measured at VCC = 3.0 V and TA = +25°C, per DC Characteristics (Page 6).

How does the R1LV0816ASB-7SI#S0 handle partial-byte writes?

The R1LV0816ASB-7SI#S0 supports partial-byte writes via dedicated UB# (pins 22, 43) and LB# (pins 21, 42) control lines. Asserting only LB# enables writing to DQ0–DQ7; asserting only UB# enables writing to DQ8–DQ15 - allowing efficient 8-bit updates without read-modify-write sequences or external byte masking logic.