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Renesas R1LV0816ASD-5SI#B0
- Part No.:
- R1LV0816ASD-5SI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 52-TFSOP (0.350", 8.89mm Width)
- Datasheet:
-
R1LV0816ASD-5SI#B0.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 52TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:928
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Product details
Overview
R1LV0816ASD-5SI#B0 from Renesas Electronics is an 8Mb low-power static RAM organized as 524,288 words × 16 bits, fabricated in 0.15 µm CMOS/TFT process. It operates from a single 2.4–3.6 V supply, delivers 55 ns access time, and draws only 1.2 µA standby current at 3.0 V - enabling battery-backed memory retention in portable instrumentation and industrial control systems.
For engineers reviewing the R1LV0816ASD-5SI#B0 datasheet, R1LV0816ASD-5SI#B0 pinout, R1LV0816ASD-5SI#B0 application, or R1LV0816ASD-5SI#B0 equivalent, key selection criteria include its f-BGA48 (7.5 mm × 8.5 mm, 0.75 mm pitch) package, TTL-compatible I/O, no-refresh operation, and byte-selectable write capability via LB#/UB#.
Technical Context
This LPSRAM implements asynchronous, non-volatile-retentive SRAM architecture with dual chip select (CS1#, CS2), independent upper/lower byte enables (UB#, LB#), and three-state bidirectional data I/O (DQ0–DQ15). Its address buffer, data selector, and sense/write amplifier are fully static - eliminating clocks, refresh cycles, or timing constraints beyond standard read/write setup/hold windows.
Operation supports word-wide (16-bit), upper-byte-only, lower-byte-only, and output-disabled modes controlled by CS1#, CS2, WE#, OE#, LB#, and UB# logic levels. Data retention is maintained down to 1.5 V VCC with sub-20 µA current draw at +85°C when entering retention mode via CS2 low or LB#/UB# high assertion.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 8 Mbit (524,288 × 16-bit organization) - supports compact 16-bit microcontroller or DSP data buffers without external width expansion. |
| Access time | 55 ns (R1LV0816ASD-5SI#B0) - meets timing for 18 MHz bus interfaces with zero wait states in most embedded controllers. |
| Supply voltage | 2.4–3.6 V - compatible with both 2.5 V and 3.3 V system rails; eliminates need for level shifters in mixed-voltage designs. |
| Standby current | 1.2 µA typ. at 3.0 V / +25°C - enables multi-year battery backup in metering or logging applications without periodic recharge. |
| Operating temperature | −40°C to +85°C - qualified for industrial-grade deployment in factory automation, transportation, and outdoor equipment. |
| Package | 48-ball f-BGA, 7.5 mm × 8.5 mm, 0.75 mm pitch - provides high I/O density and PCB routing flexibility while minimizing footprint vs. TSOP or SOJ alternatives. |
| Data retention voltage | 1.5–3.6 V - allows memory state preservation during brown-out or backup power switchover without external capacitor hold-up circuitry. |
Pinout & Package
48-ball fine-pitch BGA (PTBG0048HB-A), 7.5 mm × 8.5 mm body, 0.75 mm ball pitch, 6×8 array. Top-side marking includes lot code and "R1LV0816ASD-5SI#B0".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Vcc | Power supply | Primary 2.4–3.6 V core and I/O supply; requires local 100 nF decoupling per Vcc ball. |
| Vss | Ground | Digital ground reference; two dedicated balls ensure low-impedance return path for I/O and core logic. |
| A0–A18 | Address input | 19-bit address bus supporting full 524,288-word decoding; A18 is MSB for 16-bit word addressing. |
| DQ0–DQ15 | Data I/O | Bidirectional 16-bit data bus with three-state outputs; OR-tie capable for shared-bus configurations. |
| CS1#, CS2 | Chip select inputs | Two-level hierarchical enable: CS1# active-low primary select; CS2 active-high secondary control for retention mode entry. |
| WE#, OE# | Control inputs | Write Enable (active-low) and Output Enable (active-low); independent of byte enables for precise bus arbitration. |
| LB#, UB# | Byte enable inputs | Active-low lower/upper byte controls - enable partial writes without disturbing adjacent byte data in same word. |
| NC | No connect | Three unconnected balls (A1, A14, A15 positions) - must remain unpopulated on PCB; no internal connection. |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | True static RAM architecture eliminates DRAM-style refresh circuitry, reducing MCU firmware overhead and system power management complexity. |
| TTL-compatible I/O | VIH ≥ 2.2 V (at VCC = 2.4–2.7 V) and VOL ≤ 0.4 V ensure direct interfacing with legacy 5 V-tolerant or 3.3 V microcontrollers without level translation. |
| Low-voltage data retention | Maintains stored data down to 1.5 V VCC with ICCDR ≤ 20 µA at +85°C - enables seamless transition to backup battery or supercapacitor power sources. |
| Byte-selectable write | Independent LB# and UB# pins allow 8-bit writes to either half of the 16-bit word, preserving integrity of unchanged bytes during partial updates. |
| OR-tie capable outputs | Three-state DQ outputs support wired-OR bus topologies - simplifies multi-device memory expansion without external bus transceivers. |
Applications
| Industrial Data Logger | Portable Medical Monitor |
|---|---|
|
Use Scenario: Continuous acquisition of sensor data (ECG, SpO₂, temperature) with timestamped storage during battery-powered operation. IC Role / Device Role / Timing Role: Primary data buffer holding raw samples prior to compression/transmission; retains content across sleep/wake cycles. Use Value: 1.2 µA standby current extends battery life to >2 years; 55 ns access enables real-time buffering at 10 kS/s sampling rates without CPU intervention. |
Use Scenario: Standalone vital signs recorder used in ambulatory care, requiring tamper-proof, long-term memory retention without mains power. IC Role / Device Role / Timing Role: Non-volatile shadow RAM storing calibration coefficients, patient history, and last-known state during power loss. Use Value: Data retention down to 1.5 V VCC ensures zero data loss during battery swap or brown-out events; f-BGA48 enables compact, drop-resistant housing design. |
| Programmable Logic Controller (PLC) I/O Module | Smart Energy Meter |
|
Use Scenario: Local status caching and configuration storage in DIN-rail mounted I/O modules operating in harsh factory environments. IC Role / Device Role / Timing Role: Dual-port accessible memory for real-time I/O mapping and firmware parameter storage; accessed asynchronously by ARM Cortex-M core. Use Value: −40°C to +85°C rating guarantees reliability in unconditioned control cabinets; byte-write capability allows efficient update of individual register banks. |
Use Scenario: Tamper-resistant energy consumption logging in residential/utility smart meters with 10+ year field lifetime. IC Role / Device Role / Timing Role: Secure, low-leakage memory for tariff tables, billing intervals, and cryptographic keys - retained during mains outage. Use Value: Sub-20 µA retention current at +85°C prevents supercapacitor discharge within specification window; 48-ball f-BGA resists vibration-induced solder fatigue. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-55ZSXI | 16 Mb (1M × 16), 55 ns, 3.0–3.6 V only, TSOP-48 package; higher density but narrower voltage range and larger footprint. | Requires PCB redesign due to TSOP-48 vs. f-BGA48; unsuitable for space-constrained portable devices. | Select when higher memory capacity is needed and board layout permits TSOP package; not drop-in for R1LV0816ASD-5SI#B0. |
| IS61WV51216BLL-10MLI | 8 Mb (512K × 16), 10 ns access, 2.2–3.6 V, 48-pin TSOPII; faster but higher standby current (25 µA typical). | Higher speed trades off battery life - inappropriate for multi-year battery-backed applications. | Choose only if system demands sub-10 ns access and can accommodate increased leakage; verify thermal derating at +85°C. |
Compared with CY62167EV30LL-55ZSXI and IS61WV51216BLL-10MLI, the R1LV0816ASD-5SI#B0 uniquely balances ultra-low standby current (1.2 µA), wide 2.4–3.6 V operation, and compact f-BGA48 packaging - making it optimal for size- and battery-limited industrial and medical edge devices where longevity and reliability outweigh raw speed or density.
Availability
R1LV0816ASD-5SI#B0 is available at Aetrix Electronics and suitable for industrial data loggers, portable medical monitors, and smart energy meters requiring stable component supply across extended product lifecycles.
Supply support for R1LV0816ASD-5SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV0816ASD-5SI#B0 belongs to Renesas' Advanced LPSRAM family, engineered specifically for battery-operated and battery-backup memory applications demanding ultra-low standby power, wide supply tolerance, and industrial temperature resilience.
FAQ
What is the maximum operating frequency supported by R1LV0816ASD-5SI#B0?
R1LV0816ASD-5SI#B0 is an asynchronous SRAM with no internal clock - its effective interface speed is determined by access time and cycle time specifications. With 55 ns access time and 55 ns read/write cycle time, it supports reliable operation with bus clocks up to approximately 18 MHz in zero-wait-state configurations. The R1LV0816ASD-5SI#B0 does not require clock signals and functions independently of system clock domains.
Does R1LV0816ASD-5SI#B0 support true 16-bit word writes without byte masking?
Yes, the R1LV0816ASD-5SI#B0 supports full 16-bit word writes when both LB# and UB# are asserted low simultaneously. In this mode, DQ0–DQ15 transfer data concurrently to the addressed 16-bit location. The R1LV0816ASD-5SI#B0 also supports independent lower- or upper-byte writes using LB# or UB# alone - preserving the unselected byte's content during partial updates.
Can R1LV0816ASD-5SI#B0 retain data during complete power removal?
No - the R1LV0816ASD-5SI#B0 is a volatile SRAM and requires continuous VCC ≥ 1.5 V to retain data. However, it supports low-voltage data retention mode: when VCC remains ≥ 1.5 V and CS2 is driven low (or LB#/UB# high with CS1# low), standby current drops to ≤20 µA at +85°C, enabling multi-month retention on small backup capacitors or primary lithium batteries. The R1LV0816ASD-5SI#B0 does not incorporate non-volatile storage elements.
Is R1LV0816ASD-5SI#B0 pin-compatible with other members of the R1LV0816ABG family?
Yes - the R1LV0816ASD-5SI#B0 shares identical pinout, package (48-ball f-BGA), and signal definitions with R1LV0816ABG-5SI and R1LV0816ABG-7SI. Differences are limited to internal timing binning (55 ns vs. 70 ns access) and supply voltage range (R1LV0816ASD-5SI#B0 supports 2.4–3.6 V, matching the -5SI variant). No PCB changes are required when substituting within the same speed grade.
What is the meaning of the "#B0" suffix in R1LV0816ASD-5SI#B0?
The "#B0" suffix in R1LV0816ASD-5SI#B0 denotes Renesas' tape-and-reel packaging option with moisture sensitivity level (MSL) 3 compliance and standard reel quantity (typically 1,000 units per reel). It indicates factory-sealed, humidity-controlled packaging suitable for surface-mount assembly processes. The R1LV0816ASD-5SI#B0 is functionally and electrically identical to R1LV0816ABG-5SI in all operational respects.
R1LV0816ASD-5SI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 52-TFSOP (0.350", 8.89mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 8Mbit
- Memory Organization:
- 1M x 8, 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 52-TSOP II
R1LV0816ASD-5SI#B0 FAQ
1.How can I place an order for R1LV0816ASD-5SI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV0816ASD-5SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV0816ASD-5SI#B0 reliable?
The price and inventory of R1LV0816ASD-5SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV0816ASD-5SI#B0 is usually 5 days.
3.What payment methods are accepted for R1LV0816ASD-5SI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV0816ASD-5SI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV0816ASD-5SI#B0?
R1LV0816ASD-5SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV0816ASD-5SI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV0816ASD-5SI#B0?
For technical support, including R1LV0816ASD-5SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV0816ASD-5SI#B0 requirements.
6.How does Aetrix verify that R1LV0816ASD-5SI#B0 is sourced from the original manufacturer or authorized distributors?
All R1LV0816ASD-5SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV0816ASD-5SI#B0 meets industry standards.
7.What is the process for return or replacement of R1LV0816ASD-5SI#B0?
All R1LV0816ASD-5SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV0816ASD-5SI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV0816ASD-5SI#B0 part is unused and in its original packaging.
Return procedure for R1LV0816ASD-5SI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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