Renesas R1LV1616HBG-4SI#B0
- Part No.:
- R1LV1616HBG-4SI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
R1LV1616HBG-4SI#B0.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48TFBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
R1LV1616HBG-4SI#B0 from Renesas Electronics is a 16-Mbit static RAM organized as 1-Mword × 16-bit with embedded ECC, designed for low-power, wide-temperature battery-backed memory applications. It operates from a single 3.0 V supply (2.7–3.6 V), delivers 45 ns max access time, and draws only 1.5 µW typical standby current-enabling reliable data retention in industrial control and medical monitoring systems.
For engineers reviewing the R1LV1616HBG-4SI#B0 datasheet, R1LV1616HBG-4SI#B0 pinout, R1LV1616HBG-4SI#B0 application, or R1LV1616HBG-4SI#B0 equivalent, key selection criteria include its 48-ball FBGA package, dual chip select support for battery backup, 16-bit bidirectional I/O with byte-select capability, and guaranteed −40°C to +85°C operation with on-die ECC correction.
Technical Context
This SRAM implements a fully static 6-transistor memory cell architecture with integrated ECC encoder/decoder logic, enabling single-bit error correction without external circuitry. Its control logic supports independent upper/lower byte writes and reads via UB#/LB# pins, and uses CS1# and CS2 to enable three distinct standby modes-including ultra-low-current data retention at VCC ≥ 1.5 V.
The device features common I/O with three-state output control via OE#, WE#, and chip selects, eliminating need for external bus transceivers. Timing is asynchronous: no clock required, with equal address access and cycle times (tAA = tRC = 45 ns max), and deterministic high-Z transitions (tOHZ ≤ 15 ns) critical for shared-bus system stability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 16 Mbit (1,048,576 × 16-bit), providing compact word-wide storage for microcontroller co-processing and real-time buffering. |
| Access time | 45 ns max (−40°C to +85°C, VCC = 2.7–3.6 V), enabling direct interface with legacy 20 MHz bus systems without wait states. |
| Supply voltage | 2.7 V to 3.6 V single supply-compatible with 3.3 V logic domains and tolerant of brown-out conditions down to 2.7 V. |
| Standby current | 0.5 µA typical (ISB1), supporting >10-year battery backup in CMOS-based RTC or configuration memory applications. |
| ECC capability | On-die single-bit error correction with no software overhead-ensures data integrity in radiation-prone or long-term storage environments. |
| Operating temperature | −40°C to +85°C industrial grade, validated across full voltage range-suitable for under-hood automotive ECUs and outdoor infrastructure nodes. |
| Package | 48-ball FBGA (0.75 mm pitch, PTBG0048HF footprint), enabling high-density PCB layout with thermal performance optimized for reflow soldering. |
Pinout & Package
Package: 48-ball plastic FBGA (PTBG0048HF), top-view ball grid with 0.75 mm pitch, JEDEC-compliant footprint for automated assembly and thermal reliability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address input | 20-bit address bus supporting full 1-Mword addressing; A-1 not used-no address mirroring or aliasing. |
| I/O0–I/O15 | Data input/output | 16-bit bidirectional data bus with three-state control; shared pins eliminate need for separate DQ/DQ̅ lines. |
| CS1#, CS2 | Chip select inputs | Dual enable logic: CS1# active-low primary select; CS2 enables retention mode or disables buffers-critical for battery-switchover sequencing. |
| WE#, OE# | Write and output enable | Asynchronous control: WE# initiates write cycles; OE# gates output drivers independently-supports read-modify-write without bus contention. |
| LB#, UB# | Byte select | Independent lower/upper byte gating: enables 8-bit access in 16-bit systems, reducing power and EMI during partial-word updates. |
| VCC, VSS | Power and ground | Dedicated power/ground balls distributed across package corners-minimizes IR drop and improves noise immunity in high-speed switching. |
| NU | No-connect test pin | Must be tied to VSS or left open per datasheet; unused in functional operation-no routing or decoupling required. |
Key Features
| Feature | Design Value |
|---|---|
| Fully static operation | No clocks, refresh, or timing strobes needed-simplifies system timing design and eliminates hidden refresh power spikes. |
| Dual chip select for battery backup | CS2-controlled retention mode allows seamless switch to backup power without data loss or controller intervention. |
| Embedded ECC | Hardware-level single-bit error correction reduces firmware complexity and eliminates need for external error-handling logic. |
| Low-voltage data retention | Maintains stored data at VCC as low as 1.5 V-enables use with coin-cell batteries or supercapacitor hold-up circuits. |
| Byte-select capability | Independent LB#/UB# control permits 8-bit access in 16-bit buses-reducing dynamic power by up to 50% during partial-word writes. |
Applications
| Industrial PLC Data Buffer | Medical Device Configuration Memory |
|---|---|
|
Use Scenario: Storing real-time I/O state snapshots and firmware configuration parameters in programmable logic controllers operating in factory-floor environments with wide ambient temperature swings. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding critical runtime variables; accessed asynchronously during scan cycles with deterministic 45 ns latency. Use Value: Embedded ECC prevents silent data corruption from EMI or voltage transients; −40°C to +85°C rating ensures uptime in unconditioned enclosures. |
Use Scenario: Retaining calibration coefficients, patient history logs, and safety-critical settings in portable ultrasound and infusion pumps requiring multi-year battery-backed memory. IC Role / Device Role / Timing Role: Battery-backed SRAM serving as persistent configuration store; enters ultra-low-ISB1 mode (<0.5 µA) when main power fails. Use Value: Dual CS control enables automatic switchover to backup power; 1.5 V data retention extends usable life of primary Li-MnO₂ cells. |
| Automotive Body Control Module | Avionics System Event Logger |
|
Use Scenario: Logging door lock status, lighting sequences, and diagnostic trouble codes in under-hood BCMs exposed to thermal cycling and load-dump transients. IC Role / Device Role / Timing Role: High-reliability scratchpad memory interfaced directly to 16-bit MCU bus; accessed during periodic CAN message framing. Use Value: 48-ball FBGA withstands mechanical shock and thermal stress; on-die ECC mitigates soft errors induced by cosmic rays at altitude. |
Use Scenario: Capturing flight-critical sensor timestamps and fault signatures in certified avionics black-box recorders where data integrity is mandated by DO-160. IC Role / Device Role / Timing Role: Fault-tolerant memory buffer accepting burst writes from multiple sensor interfaces; ECC verified before flash transfer. Use Value: Guaranteed −40°C to +85°C operation meets extended environmental qualification; 45 ns access supports real-time logging at 20+ kHz sample rates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV1616AL-10TLI | 10 ns access time, 3.3 V only (3.135–3.465 V), no embedded ECC, 44-pin TSOP-II package. | Lacks battery backup support and ECC; requires external error handling and tighter supply regulation. | Select when maximum speed (100 MHz bus) outweighs reliability and power flexibility requirements. |
| AS6C1616-55PCN | 55 ns access, 3.3 V supply, no ECC, 48-pin SOP package, higher ISB (5 µA typical). | Higher standby current limits battery life; larger SOP footprint increases board area vs. FBGA. | Choose for cost-sensitive industrial designs where 55 ns timing and SOP assembly compatibility are prioritized over ECC and ultra-low ISB. |
Compared with R1LV1616HBG-4SI#B0, IS61LV1616AL-10TLI offers faster access but sacrifices ECC and wide-VCC operation, while AS6C1616-55PCN trades speed and power efficiency for lower unit cost and through-hole assembly compatibility.
Availability
R1LV1616HBG-4SI#B0 is available at Aetrix Electronics and suitable for industrial automation, medical instrumentation, automotive body electronics, and avionics requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for R1LV1616HBG-4SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV1616HBG-I Series targets high-reliability, low-power embedded systems requiring extended temperature operation and hardware ECC-designed specifically for battery-backed data logging, configuration storage, and real-time buffering in harsh environments.
FAQ
What is the guaranteed operating temperature range for R1LV1616HBG-4SI#B0?
R1LV1616HBG-4SI#B0 is specified for continuous operation from −40°C to +85°C across its full 2.7–3.6 V supply range. This industrial-grade rating is validated per the datasheet's DC and AC characteristics tables and applies to all timing parameters including tAA, tRC, and tWP-making it suitable for under-hood automotive and outdoor industrial deployments where thermal cycling is expected.
Does R1LV1616HBG-4SI#B0 require an external clock or refresh signal?
No, R1LV1616HBG-4SI#B0 is a fully static RAM: it requires no clock, no refresh cycles, and no timing strobes. All operations are controlled asynchronously via CS1#, CS2, WE#, OE#, LB#, and UB# signals. This eliminates timing constraints associated with dynamic RAM and simplifies integration with microcontrollers lacking dedicated DRAM controllers.
How does the embedded ECC in R1LV1616HBG-4SI#B0 function during normal read/write operations?
The embedded ECC in R1LV1616HBG-4SI#B0 operates transparently: during every write, the on-die encoder generates parity bits stored alongside data; during every read, the decoder checks and corrects single-bit errors in real time-requiring no firmware intervention or additional memory overhead. The corrected data appears at I/O0–I/O15 without latency penalty beyond standard access time.
What is the minimum supply voltage at which R1LV1616HBG-4SI#B0 retains stored data?
R1LV1616HBG-4SI#B0 guarantees data retention down to VCC = 1.5 V when placed in standby mode using CS2, CS1#, or LB#/UB# control-as confirmed in the Low VCC Data Retention Characteristics table (page 12). At this voltage, typical retention current is 0.5 µA, enabling multi-year operation from primary lithium batteries or energy-harvesting sources.
Can R1LV1616HBG-4SI#B0 be used in byte-mode (8-bit) configurations?
Yes, R1LV1616HBG-4SI#B0 supports true byte-mode operation via dedicated LB# and UB# pins. When LB# is asserted, only I/O0–I/O7 are active; when UB# is asserted, only I/O8–I/O15 drive valid data. This allows 8-bit microcontrollers to interface directly without glue logic, reduces switching current by half during partial-word accesses, and maintains full 45 ns timing compliance.
R1LV1616HBG-4SI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- R1LV1616HBG-I
- Package/Case:
- 48-TFBGA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TFBGA (8x9.5)
R1LV1616HBG-4SI#B0 FAQ
1.How can I place an order for R1LV1616HBG-4SI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV1616HBG-4SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV1616HBG-4SI#B0 reliable?
The price and inventory of R1LV1616HBG-4SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV1616HBG-4SI#B0 is usually 5 days.
3.What payment methods are accepted for R1LV1616HBG-4SI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV1616HBG-4SI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV1616HBG-4SI#B0?
R1LV1616HBG-4SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV1616HBG-4SI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV1616HBG-4SI#B0?
For technical support, including R1LV1616HBG-4SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV1616HBG-4SI#B0 requirements.
6.How does Aetrix verify that R1LV1616HBG-4SI#B0 is sourced from the original manufacturer or authorized distributors?
All R1LV1616HBG-4SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV1616HBG-4SI#B0 meets industry standards.
7.What is the process for return or replacement of R1LV1616HBG-4SI#B0?
All R1LV1616HBG-4SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV1616HBG-4SI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV1616HBG-4SI#B0 part is unused and in its original packaging.
Return procedure for R1LV1616HBG-4SI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV1616HBG-4SI#B0 Tags

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