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Renesas R1LV1616HBG-4SI#S0
- Part No.:
- R1LV1616HBG-4SI#S0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
R1LV1616HBG-4SI#S0.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48TFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,475
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Product details
Overview
R1LV1616HBG-4SI#S0 from Renesas Electronics is a 16-Mbit (1-Mword × 16-bit) static RAM with embedded ECC, designed for high-reliability data storage in battery-backed systems. It operates from a single 3.0 V supply (2.7–3.6 V), delivers 45 ns max access time, and consumes only 1.5 µW typical standby current - enabling ultra-low-power retention in industrial and automotive control units.
For engineers reviewing the R1LV1616HBG-4SI#S0 datasheet, R1LV1616HBG-4SI#S0 pinout, R1LV1616HBG-4SI#S0 application, or R1LV1616HBG-4SI#S0 equivalent, this device serves as a drop-in SRAM solution where ECC-enabled data integrity, wide temperature operation (−40°C to +85°C), and FBGA packaging are critical for mission-critical embedded memory subsystems.
Technical Context
This SRAM implements a fully static 6-transistor cell architecture with no clocks or timing strobes required. Its dual chip select (CS1#, CS2) enables flexible power management - CS2 controls address/IO buffers and supports three independent data retention modes (CS1#-, CS2-, or LB#/UB#-controlled).
The integrated ECC engine performs single-bit error correction and detection on all read operations, using dedicated encoder/decoder logic within the memory matrix. Byte-select capability (LB#/UB#) allows 8-bit sub-word access without external logic, while common I/O pins reduce PCB trace count and simplify interface design.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1,048,576 words × 16 bits) - supports full-word or byte-aligned data transfers in microcontroller-based systems. |
| Access Time | 45 ns (max) - enables direct interfacing with legacy 25 MHz bus controllers without wait states. |
| Supply Voltage | 2.7 V to 3.6 V - compatible with 3.3 V LVTTL and mixed-voltage SoC interfaces. |
| Standby Current | 0.5 µA typical (ISB1) - sustains data retention for years on coin-cell backup power. |
| ECC Function | Single-bit error correction / double-bit error detection - ensures data integrity in radiation-prone or long-life field deployments. |
| Operating Temperature | −40°C to +85°C - qualified for under-hood automotive ECUs and industrial PLCs. |
| Package | 48-ball FBGA (0.75 mm pitch) - provides high I/O density and thermal performance in space-constrained modules. |
Pinout & Package
Package: 48-ball plastic FBGA (PTBG0048HF), top-view ball grid with 0.75 mm pitch. Pin functions validated per Renesas Rev.1.02 datasheet, page 2.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address input | 20-bit address bus supporting full 1-Mword addressing; A-1 not used (word mode only). |
| I/O0–I/O15 | Data input/output | Bi-directional 16-bit data bus with 3-state output control via OE#; shared for read/write. |
| CS1#, CS2 | Chip select inputs | CS1# active-low primary enable; CS2 active-high secondary control enabling retention mode selection and buffer gating. |
| WE#, OE# | Write and output enable | WE# low initiates write; OE# low enables output drivers - both support asynchronous operation. |
| LB#, UB# | Byte select | Active-low lower/upper byte enables allow 8-bit access without external demux; support partial writes. |
| VCC, VSS | Power and ground | Single 3.3 V supply domain; decoupling required per ball location (VCC/VSS distributed across array). |
| NU | Not used | Test pin; must be grounded or left open - no functional role in normal operation. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC | Hardware-accelerated single-bit correction on every read cycle - eliminates need for software ECC overhead in safety-critical firmware. |
| Battery backup support | Dual retention entry paths (CS1#, CS2, or LB#/UB# assertion) - enables seamless transition to ultra-low-power mode during main supply loss. |
| Low-power standby | 0.5 µA typical ISB1 current at 3.0 V - extends backup battery life beyond 10 years in always-on monitoring nodes. |
| Asynchronous interface | No clock, no timing strobe - simplifies integration with FPGA, ASIC, or MCU parallel buses lacking synchronous timing constraints. |
| Byte-select capability | Independent LB#/UB# control allows 8-bit peripheral register access without glue logic or data masking. |
Applications
| Industrial PLC Memory Buffer | Automotive Engine Control Unit (ECU) |
|---|---|
Use Scenario: Storing real-time sensor calibration tables and fault logs in programmable logic controllers operating in factory environments with voltage sags and EMI. IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding configuration data; accessed asynchronously during runtime with ECC-protected reads. Use Value: Prevents silent data corruption in 24/7 operation; 1.5 µW standby draw enables >5-year backup battery life without maintenance. |
Use Scenario: Caching transient engine parameters (RPM, throttle position, knock sensor history) in Tier-1 automotive ECUs requiring ASIL-B compliance. IC Role / Device Role / Timing Role: High-speed scratchpad memory interfaced directly to MCU's external bus; ECC ensures integrity of safety-critical diagnostic records. Use Value: Meets ISO 26262 data integrity requirements via hardware ECC; −40°C to +85°C rating supports under-hood deployment. |
| Metering Data Logger | Railway Signaling Controller |
Use Scenario: Recording utility meter pulse counts and timestamped consumption events in smart electricity meters with coin-cell backup. IC Role / Device Role / Timing Role: Battery-backed SRAM retaining data during AC mains failure; CS2-controlled retention minimizes leakage during brownouts. Use Value: Achieves >10-year data retention on CR2032; 45 ns access enables fast logging during peak load intervals. |
Use Scenario: Storing interlocking logic state and event histories in wayside signaling systems exposed to wide ambient temperature swings and vibration. IC Role / Device Role / Timing Role: Mission-critical volatile memory storing real-time track occupancy status; ECC prevents false signal assertions due to cosmic ray upsets. Use Value: Eliminates need for periodic memory scrubbing; FBGA package resists mechanical stress better than TSOP in rail-mounted enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV1616AL-10TLI | No embedded ECC; 10 ns slower access (55 ns); same 48-pin TSOP-II package. | Lacks hardware error correction - requires external ECC logic or software mitigation for safety-critical use. | Select when cost sensitivity outweighs ECC requirement and PCB layout accommodates TSOP-II footprint. |
| AS6C1616-45TIN | Same 45 ns speed and 16-bit bus; no ECC; 48-pin TSOP-I package; higher standby current (5 µA typical). | Higher power draw limits battery backup duration; no retention mode flexibility (single CS only). | Choose for legacy board refresh where TSOP-I socket exists and ECC is not mandated by system standard. |
Compared with IS61LV1616AL-10TLI and AS6C1616-45TIN, the R1LV1616HBG-4SI#S0 uniquely combines 45 ns speed, hardware ECC, and multi-mode retention in an FBGA package - making it the only option meeting functional safety and long-term backup requirements without design compromises.
Availability
R1LV1616HBG-4SI#S0 is available at Aetrix Electronics and suitable for industrial automation, automotive control units, and smart metering applications requiring stable component supply across extended product lifecycles.
Supply support for R1LV1616HBG-4SI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV1616HBG-I Series targets high-reliability embedded systems needing ECC-protected, low-power SRAM - specifically engineered for battery-backed operation in harsh thermal and electrical environments.
FAQ
What is the maximum guaranteed access time for R1LV1616HBG-4SI#S0?
The R1LV1616HBG-4SI#S0 has a maximum guaranteed access time of 45 ns across its full operating temperature range (−40°C to +85°C) and supply voltage range (2.7 V to 3.6 V), as specified in the AC Characteristics table on page 7 of the Renesas datasheet Rev.1.02. This value applies to address access time (tAA), chip select access time (tACS1/tACS2), and read cycle time (tRC).
Does R1LV1616HBG-4SI#S0 require external ECC circuitry?
No, the R1LV1616HBG-4SI#S0 integrates a hardware ECC engine that automatically performs single-bit error correction and double-bit error detection on every read operation. No external logic or firmware intervention is needed - the ECC function is transparent and always active, as confirmed in the Block Diagram (page 3) and Features section of the datasheet.
How does R1LV1616HBG-4SI#S0 support battery backup operation?
The R1LV1616HBG-4SI#S0 supports battery backup through three independent data retention modes controlled by CS1#, CS2, or LB#/UB# assertion - each enabling ultra-low-current operation (0.5 µA typical) while preserving memory contents. The device retains data down to 1.5 V supply, as defined in the Low VCC Data Retention Characteristics table (page 12).
What is the function of the NU pin on R1LV1616HBG-4SI#S0?
The NU (Not Used) pin on the R1LV1616HBG-4SI#S0 is a test mode pin with no functional role in normal operation. Per the Pin Description table (page 2), it must be either connected to ground (VSS) or left unconnected (open); floating the pin is not permitted, but no electrical or timing impact occurs in either valid configuration.
Is R1LV1616HBG-4SI#S0 pin-compatible with other members of the R1LV1616HBG-I Series?
Yes, all variants in the R1LV1616HBG-I Series - including R1LV1616HBG-4SI#S0 and R1LV1616HBG-5SI - share identical 48-ball FBGA pinouts and signal assignments. The only differences are access time (45 ns vs. 55 ns) and corresponding AC timing parameters; DC characteristics and package dimensions are fully interchangeable.
R1LV1616HBG-4SI#S0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- R1LV1616HBG-I
- Package/Case:
- 48-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TFBGA (8x9.5)
R1LV1616HBG-4SI#S0 FAQ
1.How can I place an order for R1LV1616HBG-4SI#S0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV1616HBG-4SI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV1616HBG-4SI#S0 reliable?
The price and inventory of R1LV1616HBG-4SI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV1616HBG-4SI#S0 is usually 5 days.
3.What payment methods are accepted for R1LV1616HBG-4SI#S0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV1616HBG-4SI#S0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV1616HBG-4SI#S0?
R1LV1616HBG-4SI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV1616HBG-4SI#S0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV1616HBG-4SI#S0?
For technical support, including R1LV1616HBG-4SI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV1616HBG-4SI#S0 requirements.
6.How does Aetrix verify that R1LV1616HBG-4SI#S0 is sourced from the original manufacturer or authorized distributors?
All R1LV1616HBG-4SI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV1616HBG-4SI#S0 meets industry standards.
7.What is the process for return or replacement of R1LV1616HBG-4SI#S0?
All R1LV1616HBG-4SI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV1616HBG-4SI#S0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV1616HBG-4SI#S0 part is unused and in its original packaging.
Return procedure for R1LV1616HBG-4SI#S0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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