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Renesas R1LV1616HBG-5SI#S0

Part No.:
R1LV1616HBG-5SI#S0
Manufacturer:
Renesas
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixR1LV1616HBG-5SI#S0.pdf
Description:
IC SRAM 16MBIT PARALLEL 48TFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,353

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Product details

Overview

R1LV1616HBG-5SI#S0 from Renesas Electronics is a 16-Mbit static RAM organized as 1-Mword × 16-bit with embedded ECC, designed for low-power, wide-temperature battery-backed memory applications. It operates from a single 3.0 V supply (2.7–3.6 V), delivers 55 ns max access time, consumes only 1.5 µW typical standby current, and is housed in a 48-ball FBGA package.

For engineers reviewing the R1LV1616HBG-5SI#S0 datasheet, R1LV1616HBG-5SI#S0 pinout, R1LV1616HBG-5SI#S0 application, or R1LV1616HBG-5SI#S0 equivalent, this device serves as a drop-in SRAM replacement where ECC-enabled data integrity, extended temperature operation (−40°C to +85°C), and ultra-low standby power are required in industrial control, medical instrumentation, and backup memory subsystems.

Technical Context

This SRAM implements a fully static 6-transistor cell architecture with no clock or timing strobe required, enabling deterministic read/write timing and eliminating refresh overhead. Its dual chip select (CS1#, CS2) supports independent battery backup mode entry via either CS2 low or CS1# high/CS2 high conditions.

The device integrates dedicated ECC encoder/decoder logic that corrects all single-bit errors in real time during read operations and detects double-bit errors. Byte-level control (LB#, UB#) enables 8-bit sub-word access without external logic, while three-state I/O drivers support bus sharing in multi-device systems.

Key Specifications

Parameter Value and Actual Design Meaning
Memory density16 Mbit (1,048,576 words × 16 bits) - supports full 16-bit parallel data bus interface without external width expansion
Access time55 ns max - defines minimum cycle time for reliable random-access reads/writes at full speed
Supply voltage2.7 V to 3.6 V - compatible with standard 3.3 V logic rails and tolerant of brown-out conditions down to 2.7 V
Standby current0.5 µA typical - enables multi-year battery backup operation in non-volatile memory retention mode
ECC capabilitySingle-bit error correction / double-bit error detection - ensures data reliability in radiation-prone or long-term storage environments
Operating temperature−40°C to +85°C - qualified for industrial and automotive under-hood auxiliary systems
Package48-ball FBGA (PTBG0048HF), 0.75 mm pitch - enables high-density PCB layout with thermal and electrical performance optimized for surface-mount assembly

Pinout & Package

Package: 48-ball plastic FBGA (PTBG0048HF), top view, 0.75 mm ball pitch. Ball grid conforms to JEDEC MO-245 standard.

Pin/Terminal Circuit Role Design Meaning
A0–A19Address input20-bit address bus supporting full 1-Mword addressing; A0–A19 directly map to internal row/column decoder
I/O0–I/O15Data input/output16-bit bidirectional data bus with three-state output drivers; shared for read and write transfers
CS1#, CS2Chip select inputsCS1# active-low primary enable; CS2 active-high secondary enable - dual-CS architecture enables flexible power-down and battery-backup control
WE#, OE#Write and output enableWE# controls write latching; OE# gates output drivers - independent control allows read-modify-write sequences without bus contention
LB#, UB#Byte selectLB# enables lower byte (I/O0–I/O7); UB# enables upper byte (I/O8–I/O15) - supports 8-bit microcontroller interfaces without glue logic
VCC, VSSPower and groundSingle 3.0 V supply domain; separate VCC/VSS pairs ensure stable core and I/O voltage reference
NUNo-connect test pinNot used in normal operation; must be grounded or left open per datasheet - no functional role in application circuitry

Key Features

Feature Design Value
Fully static operationNo clocks, no refresh cycles - eliminates timing-critical system-level synchronization and reduces MCU firmware overhead
Embedded ECCOn-die single-bit correction/double-bit detection - removes need for external ECC logic or software-based error handling in safety-critical memory buffers
Battery backup supportDual-mode retention entry (CS2 low or CS1#/CS2 high) - enables seamless transition to ultra-low-power data hold during main supply loss
Low standby power0.5 µA typical ISB1 - extends coin-cell life beyond 10 years in always-on monitoring applications
Byte-selectable I/OIndependent LB#/UB# control - permits partial-word writes and mixed 8/16-bit bus interfacing without external multiplexers

Applications

Industrial PLC Data Buffer Medical Patient Monitor Memory

Use Scenario: Real-time logging of sensor inputs and control state in programmable logic controllers operating in unconditioned factory environments.

IC Role / Device Role / Timing Role: Primary volatile data buffer storing runtime variables, ladder logic state, and event timestamps with guaranteed integrity across power cycles.

Use Value: Embedded ECC prevents silent data corruption in long-duration log files; −40°C to +85°C rating ensures operation inside metal enclosures exposed to ambient temperature swings.

Use Scenario: Storing patient vital sign waveforms and alarm history in portable ECG and SpO₂ monitors requiring battery-powered continuous operation.

IC Role / Device Role / Timing Role: High-reliability SRAM holding waveform buffers and configuration data during AC power loss, backed by coin cell.

Use Value: 0.5 µA standby current enables >5-year coin-cell service life; 55 ns access supports real-time display refresh and alarm response latency under 100 µs.

Railway Signaling Controller Avionics Data Recorder

Use Scenario: Capturing train position, speed, and signal status in wayside signaling units deployed along rail corridors with extreme thermal exposure.

IC Role / Device Role / Timing Role: Non-refreshing memory for safety-critical operational logs, accessed asynchronously by redundant microcontrollers.

Use Value: Dual CS-based battery backup ensures uninterrupted logging during track-side power outages; ECC guarantees integrity of fault diagnostic records.

Use Scenario: Buffering flight parameter telemetry in crash-survivable solid-state recorders where data must survive mechanical shock and fire exposure.

IC Role / Device Role / Timing Role: High-speed write buffer accepting ARINC 429 or MIL-STD-1553 data streams before compression and archival to flash.

Use Value: 16-bit bus width matches common avionics data word size; 48-ball FBGA provides robust solder joint reliability under vibration stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61LV1616AL-10TLI10 ns faster access (45 ns), no embedded ECC, same 48-pin TSOP-II packageLacks hardware error correction; requires external ECC or software mitigation in safety-critical useSelect when maximum speed is prioritized over data integrity assurance and board layout allows TSOP-II footprint
AS6C1616-55TINSame 55 ns speed, no ECC, 44-pin SOJ package, higher standby current (5 µA typ)SOJ packaging limits board density; absence of ECC increases validation burden for medical/industrial certificationsChoose only for legacy SOJ-compatible designs where FBGA rework is prohibitive and ECC is handled at system level

Compared with IS61LV1616AL-10TLI and AS6C1616-55TIN, R1LV1616HBG-5SI#S0 uniquely delivers on-die ECC, ultra-low 0.5 µA standby, and FBGA packaging-making it the sole option among these three qualified for battery-backed, safety-aware, high-density embedded memory where data integrity cannot be compromised.

Availability

R1LV1616HBG-5SI#S0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical patient monitor memory, railway signaling controllers, and avionics data recorders requiring stable component supply across extended temperature and long-life battery operation.

Supply support for R1LV1616HBG-5SI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.

The R1LV1616HBG-I Series was developed specifically for high-reliability, wide-temperature, battery-backed SRAM applications demanding embedded ECC and ultra-low standby power in compact FBGA packaging.

FAQ

What is the maximum operating frequency supported by R1LV1616HBG-5SI#S0?

R1LV1616HBG-5SI#S0 does not operate on a clock signal-it is a fully static RAM. Its maximum effective throughput is governed by its 55 ns access time and 55 ns cycle time, enabling up to ~18.2 MHz random read/write bandwidth in ideal conditions. The device requires no external clock, simplifying timing design in microcontroller- or FPGA-based systems.

Does R1LV1616HBG-5SI#S0 require external ECC circuitry?

No. R1LV1616HBG-5SI#S0 integrates a complete ECC engine that performs single-bit error correction and double-bit error detection transparently during every read operation. No external logic, software routines, or additional memory overhead is needed-ECC is implemented entirely within the R1LV1616HBG-5SI#S0 die.

How is battery backup mode activated on R1LV1616HBG-5SI#S0?

R1LV1616HBG-5SI#S0 enters battery backup mode through three independent hardware conditions: (1) CS2 driven low, (2) CS1# high AND CS2 high, or (3) LB# and UB# both high AND CS2 high AND CS1# low. Any of these configurations reduces current draw to ≤0.5 µA while retaining data, enabling seamless transition from main supply to backup power.

What is the function of the NU pin on R1LV1616HBG-5SI#S0?

The NU pin on R1LV1616HBG-5SI#S0 is a no-connect test pin with no functional role in normal operation. Per the datasheet, it must be either grounded (connected to VSS) or left unconnected (open). Leaving it floating is not permitted, but its state has no effect on R1LV1616HBG-5SI#S0 functionality or timing behavior.

Can R1LV1616HBG-5SI#S0 interface directly with an 8-bit microcontroller?

Yes. R1LV1616HBG-5SI#S0 supports byte-wide operation via dedicated LB# and UB# pins. An 8-bit microcontroller can access the lower byte (I/O0–I/O7) by asserting LB# low while holding UB# high, or the upper byte (I/O8–I/O15) by asserting UB# low while holding LB# high-no external demultiplexing logic is required.

R1LV1616HBG-5SI#S0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
R1LV1616HBG-I
Package/Case:
48-TFBGA
Packaging:
Bulk
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-TFBGA (8x9.5)

R1LV1616HBG-5SI#S0 FAQ

1.How can I place an order for R1LV1616HBG-5SI#S0 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1LV1616HBG-5SI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1LV1616HBG-5SI#S0 reliable?

The price and inventory of R1LV1616HBG-5SI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV1616HBG-5SI#S0 is usually 5 days.

3.What payment methods are accepted for R1LV1616HBG-5SI#S0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV1616HBG-5SI#S0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1LV1616HBG-5SI#S0?

R1LV1616HBG-5SI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1LV1616HBG-5SI#S0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LV1616HBG-5SI#S0?

For technical support, including R1LV1616HBG-5SI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV1616HBG-5SI#S0 requirements.

6.How does Aetrix verify that R1LV1616HBG-5SI#S0 is sourced from the original manufacturer or authorized distributors?

All R1LV1616HBG-5SI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV1616HBG-5SI#S0 meets industry standards.

7.What is the process for return or replacement of R1LV1616HBG-5SI#S0?

All R1LV1616HBG-5SI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV1616HBG-5SI#S0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LV1616HBG-5SI#S0 part is unused and in its original packaging.

Return procedure for R1LV1616HBG-5SI#S0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

R1LV1616HBG-5SI#S0 Tags

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