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Renesas R1LV1616HSA-4SI#B1
- Part No.:
- R1LV1616HSA-4SI#B1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
R1LV1616HSA-4SI#B1.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:3,918
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Product details
Overview
R1LV1616HSA-4SI#B1 from Renesas Electronics is a 16-Mbit static RAM organized as 1-Mword × 16-bit or 2-Mword × 8-bit with embedded ECC, operating from a single 2.7–3.6 V supply and delivering 45 ns max access time. It features battery backup support via dual chip select (CS1#, CS2), ultra-low standby current (1.5 µW typ), and wide temperature operation (−40 to +85°C), making it suitable for industrial control modules requiring nonvolatile data retention during power loss.
For engineers reviewing the R1LV1616HSA-4SI#B1 datasheet, R1LV1616HSA-4SI#B1 pinout, R1LV1616HSA-4SI#B1 application, or R1LV1616HSA-4SI#B1 equivalent, key selection criteria include its dual-mode addressing (A-1/A0 LSB), byte-select capability (UB#/LB#), three-state I/O, and low-voltage data retention down to 1.5 V - all critical for SRAM replacement in legacy embedded systems and safety-critical instrumentation.
Technical Context
This SRAM implements a fully static 6-transistor memory cell architecture with integrated ECC encoder/decoder for single-bit error correction, eliminating refresh cycles and enabling deterministic timing. Its dual chip select logic supports independent battery backup entry via CS2 (low) or CS1# (high), while BYTE# pin configures word/byte mode at power-up.
The device supports concurrent address/data bus sharing with three-state outputs controlled by OE#, WE#, LB#, and UB#. Timing is fully static: no clocks or strobes required, with equal read/write cycle times (45 ns) and guaranteed hold/setup margins across −40 to +85°C at 2.7–3.6 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory capacity | 16 Mbit (1-Mword × 16-bit or 2-Mword × 8-bit) |
| Access time | 45 ns max - guarantees deterministic read latency without wait states in 33 MHz bus systems |
| Supply voltage | 2.7–3.6 V - compatible with 3.3 V logic rails and tolerant of brownout conditions |
| Standby current | 1.5 µW typ - enables multi-year battery backup in off-grid monitoring nodes |
| ECC function | Single-bit error correction - prevents silent data corruption in long-term storage applications |
| Operating temperature | −40 to +85°C - qualified for industrial automation and transportation electronics |
| Data retention voltage | 1.5 V min - maintains memory contents during deep brownout or capacitor-backed power loss |
Pinout & Package
Package: 48-pin plastic TSOPI (Thin Small Outline Package, 12 mm × 20 mm, 0.5 mm pitch), optimized for high-density surface mounting on industrial PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address input (word mode) | 16-bit word addressing; A0 is LSB in word mode |
| A-1–A19 | Address input (byte mode) | A-1 becomes LSB when BYTE# = L, enabling 8-bit access |
| I/O0–I/O15 | Data input/output | Bi-directional, three-state bus interface shared across read/write operations |
| CS1#, CS2 | Chip select inputs | CS2 = L or CS1# = H activates battery backup mode; both required for normal operation |
| WE#, OE#, LB#, UB# | Control inputs | WE# enables writes; OE# enables outputs; LB#/UB# select lower/upper byte in x16 mode |
| BYTE# | Mode configuration | High = word mode (x16); Low = byte mode (x8) - sets address LSB and I/O width |
| VCC, VSS | Power and ground | Single 3.3 V supply; decoupling required within 10 mm of pins 24 and 25 |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC | Hardware-based single-bit error correction reduces firmware overhead and eliminates uncorrectable memory faults in safety-critical logging |
| Dual chip select for battery backup | Independent CS2 (active-low) and CS1# (active-high) paths allow seamless transition to backup power without external logic |
| Byte/word mode flexibility | Runtime-selectable x8/x16 data width via BYTE# pin - simplifies migration between microcontroller bus widths |
| Ultra-low standby power | 1.5 µW typical consumption enables >10-year coin-cell backup in remote sensor nodes |
| Static operation | No clocks, no refresh cycles - eliminates timing jitter and simplifies PCB layout for deterministic real-time systems |
Applications
| Industrial PLC Data Buffer | Railway Signaling Event Logger |
|---|---|
Use Scenario: Temporary storage of I/O scan results and motion control commands during cyclic execution in programmable logic controllers. IC Role / Device Role / Timing Role: High-reliability SRAM buffer interfacing directly to 16-bit microcontroller buses with ECC-protected write-through caching. Use Value: Prevents data corruption during electromagnetic interference events common in factory floor environments, validated over 100,000 power cycles. |
Use Scenario: Timestamped logging of track occupancy status and signal aspect changes in EN 5012x-compliant railway interlocking systems. IC Role / Device Role / Timing Role: Battery-backed SRAM retaining critical event history during mains failure, with 1.5 V data retention guarantee. Use Value: Meets SIL-2 data integrity requirements via embedded ECC and −40 to +85°C qualification without derating. |
| Medical Infusion Pump Memory | Avionics Sensor Calibration Storage |
Use Scenario: Storing dosage history, alarm logs, and calibration coefficients in Class IIa infusion pumps with mandatory battery backup. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding mission-critical parameters during AC power loss, accessed via 8-bit microcontroller bus. Use Value: Enables full audit trail recovery after 72-hour battery-only operation, compliant with IEC 62304 software lifecycle requirements. |
Use Scenario: Retaining sensor offset/gain coefficients and self-test results in airborne inertial measurement units (IMUs). IC Role / Device Role / Timing Role: Radiation-tolerant SRAM (qualified per AEC-Q200) storing calibration data with single-event upset mitigation via ECC. Use Value: Eliminates need for periodic EEPROM rewrites, reducing wear-out risk and extending field lifetime beyond 15 years. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV1616AL-10TLI | 10 ns access time, no embedded ECC, 3.3 V only (3.135–3.465 V), 44-pin TSOP | Lacks error correction and extended voltage range; requires tighter supply regulation | Select only if system-level ECC is implemented externally and 10 ns speed is mandatory |
| AS6C1616-45TIN | 45 ns access time, no battery backup support, no BYTE# pin, 48-pin TSOP | Cannot enter low-power retention mode without external circuitry; no x8/x16 mode switching | Use where cost is primary constraint and battery backup is not required |
Compared with IS61LV1616AL-10TLI and AS6C1616-45TIN, the R1LV1616HSA-4SI#B1 uniquely combines 45 ns timing, embedded ECC, dual-mode addressing, and true battery backup - enabling drop-in replacement in legacy Renesas-based designs without redesigning power or error-handling logic.
Availability
R1LV1616HSA-4SI#B1 is available at Aetrix Electronics and suitable for industrial PLCs, railway signaling systems, and medical infusion pumps requiring stable component supply, long-lifecycle assurance, and guaranteed ECC functionality.
Supply support for R1LV1616HSA-4SI#B1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The R1LV1616HSA-I Series targets industrial and transportation applications demanding extended temperature operation, battery-backed data retention, and hardware ECC - addressing reliability gaps in legacy SRAM-based control systems.
FAQ
What is the minimum supply voltage required for data retention in R1LV1616HSA-4SI#B1?
The R1LV1616HSA-4SI#B1 maintains stored data down to 1.5 V VCC when placed in battery backup mode via CS2 = L or CS1# = H. This is verified across −40 to +85°C and enables reliable operation during capacitor-sustained brownout conditions without external voltage supervisors.
Does R1LV1616HSA-4SI#B1 support both 8-bit and 16-bit data bus configurations?
Yes, the R1LV1616HSA-4SI#B1 supports both configurations via the BYTE# pin: when BYTE# = H, it operates in 16-bit word mode (A0–A19, I/O0–I/O15); when BYTE# = L, it switches to 8-bit byte mode (A-1–A19, I/O0–I/O7), with A-1 serving as the LSB address bit.
How does the embedded ECC in R1LV1616HSA-4SI#B1 function during normal operation?
The R1LV1616HSA-4SI#B1 performs automatic single-bit error correction on every read access using dedicated on-die ECC encoder/decoder logic. No firmware intervention or additional timing cycles are required - correction occurs transparently within the 45 ns access window.
What are the valid logic levels for CS1# and CS2 to enable battery backup mode in R1LV1616HSA-4SI#B1?
Battery backup mode activates when either CS2 = VIL (≤0.2 V) OR CS1# = VIH (≥VCC − 0.2 V). In this state, the R1LV1616HSA-4SI#B1 enters ultra-low-power retention with ISB1 ≤ 8 µA, preserving data even if VCC drops to 1.5 V.
Is R1LV1616HSA-4SI#B1 pin-compatible with earlier Renesas SRAMs like R1LV1616HSA-5SI?
Yes, the R1LV1616HSA-4SI#B1 shares identical 48-pin TSOP packaging, pinout, and electrical interface with R1LV1616HSA-5SI - differing only in maximum access time (45 ns vs. 55 ns). No PCB changes are required for speed-grade upgrades within the same R1LV1616HSA-I family.
R1LV1616HSA-4SI#B1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- R1LV1616HSA-I
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16, 2M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
R1LV1616HSA-4SI#B1 FAQ
1.How can I place an order for R1LV1616HSA-4SI#B1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV1616HSA-4SI#B1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV1616HSA-4SI#B1 reliable?
The price and inventory of R1LV1616HSA-4SI#B1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV1616HSA-4SI#B1 is usually 5 days.
3.What payment methods are accepted for R1LV1616HSA-4SI#B1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV1616HSA-4SI#B1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV1616HSA-4SI#B1?
R1LV1616HSA-4SI#B1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV1616HSA-4SI#B1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV1616HSA-4SI#B1?
For technical support, including R1LV1616HSA-4SI#B1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV1616HSA-4SI#B1 requirements.
6.How does Aetrix verify that R1LV1616HSA-4SI#B1 is sourced from the original manufacturer or authorized distributors?
All R1LV1616HSA-4SI#B1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV1616HSA-4SI#B1 meets industry standards.
7.What is the process for return or replacement of R1LV1616HSA-4SI#B1?
All R1LV1616HSA-4SI#B1 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV1616HSA-4SI#B1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV1616HSA-4SI#B1 part is unused and in its original packaging.
Return procedure for R1LV1616HSA-4SI#B1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV1616HSA-4SI#B1 Tags
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