Renesas R1LV1616HSA-4SI#S1

Overview

R1LV1616HSA-4SI#S1 from Renesas Electronics is a 16-Mbit CMOS static RAM organized as 1-Mword × 16-bit or 2-Mword × 8-bit with embedded ECC, operating from a single 2.7–3.6 V supply and delivering 45 ns max access time. It features battery backup support via dual chip selects (CS1#, CS2), ultra-low standby current (0.5 µA typ), and wide temperature operation (−40 to +85°C), making it suitable for industrial control modules requiring nonvolatile data retention during power loss.

For engineers reviewing the R1LV1616HSA-4SI#S1 datasheet, R1LV1616HSA-4SI#S1 pinout, R1LV1616HSA-4SI#S1 application, or R1LV1616HSA-4SI#S1 equivalent, key selection criteria include byte/word mode flexibility (A-1/A0 LSB control), three-state I/O with LB#/UB# byte enable, embedded single-bit ECC correction, low-voltage data retention down to 1.5 V, and TSOP-48 packaging for high-density surface-mount deployment.

Technical Context

This SRAM implements a fully static 6-transistor memory cell architecture with no clocks or timing strobes required. Its control logic supports independent byte write enable via LB# and UB# pins, while BYTE# selects between word (A0–A19) and byte (A-1–A19) addressing modes - enabling seamless integration in both 16-bit and 8-bit bus systems.

The embedded ECC encoder/decoder block performs real-time single-bit error detection and correction on all read operations without external logic. Data retention is maintained at VCC as low as 1.5 V using any of three entry methods: CS1# high, CS2 low, or simultaneous LB#/UB# high - each validated across the full −40 to +85°C range.

Key Specifications

Pinout & Package

Package: 48-pin plastic TSOP (Thin Small Outline Package), 12.0 × 20.0 mm body, 0.5 mm lead pitch, surface-mount compatible.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61WV102416BLL-10MLI and AS6C1008-55PCN, the R1LV1616HSA-4SI#S1 delivers unique value through integrated ECC, dual-mode addressing, and true 2.7–3.6 V operational flexibility - reducing BOM count and qualification effort in industrial and automotive applications demanding long-term data integrity.

Availability

R1LV1616HSA-4SI#S1 is available at Aetrix Electronics and suitable for industrial PLCs, automotive telematics units, medical infusion pumps, and smart grid meters requiring stable component supply, long-lifecycle assurance, and guaranteed ECC-enabled memory performance.

Supply support for R1LV1616HSA-4SI#S1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LV1616HSA-I Series targets high-reliability embedded systems requiring extended temperature operation, battery-backed data retention, and hardware ECC - directly addressing design challenges in industrial automation, automotive black-box logging, and medical device data integrity.

FAQ

What is the minimum supply voltage required for data retention in R1LV1616HSA-4SI#S1?

The R1LV1616HSA-4SI#S1 maintains stored data at VCC as low as 1.5 V, verified across the full −40 to +85°C operating range. This is achieved using any of three retention entry conditions: CS2 ≤ 0.2 V, CS1# ≥ VCC − 0.2 V, or simultaneous LB# and UB# ≥ VCC − 0.2 V. The R1LV1616HSA-4SI#S1 retains data without refresh cycles, making it ideal for capacitor-based hold-up or coin-cell backup schemes in mission-critical systems.

Does R1LV1616HSA-4SI#S1 support both 8-bit and 16-bit bus interfaces?

Yes, the R1LV1616HSA-4SI#S1 supports both configurations via the BYTE# pin. When BYTE# = H, it operates in 16-bit word mode (A0–A19 address range); when BYTE# = L, it switches to 8-bit byte mode (A-1–A19), where A-1 becomes the LSB. This eliminates the need for external address multiplexing or bus-width adapters, allowing one R1LV1616HSA-4SI#S1 part number to serve diverse microcontroller and DSP platforms.

How does the embedded ECC in R1LV1616HSA-4SI#S1 function during normal operation?

The R1LV1616HSA-4SI#S1 performs automatic single-bit error correction on every read operation using dedicated on-die ECC encoder/decoder circuitry. No external logic, software intervention, or additional timing cycles are required. Corrected data appears transparently at the I/O pins, and uncorrectable multi-bit errors are flagged via standard bus behavior (no special status register). This hardware ECC implementation ensures continuous data integrity in radiation-prone or long-duration deployments without CPU overhead.

What are the key timing differences between word mode and byte mode in R1LV1616HSA-4SI#S1?

In word mode (BYTE# = H), address inputs A0–A19 define the 1-Mword space, and all 16 I/O lines transfer data simultaneously. In byte mode (BYTE# = L), A-1–A19 define the 2-Mword × 8-bit space, and LB#/UB# control which byte lane is active. AC timing parameters (tRC, tAA, tWC) remain identical in both modes, but byte-mode writes require explicit LB# or UB# assertion - enabling partial-word updates without read-modify-write sequences. The R1LV1616HSA-4SI#S1 guarantees consistent 45 ns access regardless of mode.

Is R1LV1616HSA-4SI#S1 pin-compatible with other devices in the R1LV1616HSA-I Series?

Yes, all members of the R1LV1616HSA-I Series - including R1LV1616HSA-4SI#S1, R1LV1616HSA-5SI#S1, and R1LV1616HSA-4SI#S0 - share identical 48-pin TSOP packaging, pinout, and functional interface. The only difference is maximum access time (45 ns vs. 55 ns) and temperature grade suffix (−40 to +85°C industrial vs. −40 to +105°C extended). This allows direct substitution within the same PCB layout when timing margins permit, simplifying inventory management and design reuse.