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Renesas R1LV1616RBG-5SI#B0
- Part No.:
- R1LV1616RBG-5SI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
R1LV1616RBG-5SI#B0.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48TFBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
R1LV1616RBG-5SI#B0 from Renesas Electronics is a 16Mb low-power static RAM (1M × 16-bit or 2M × 8-bit), fabricated in 0.15µm CMOS, operating from 2.7–3.6V with 55ns access time, 2µA standby current at 3.0V, and data retention down to 2.0V - deployed in battery-backed memory subsystems for portable instrumentation and industrial control.
For engineers reviewing the R1LV1616RBG-5SI#B0 datasheet, R1LV1616RBG-5SI#B0 pinout, R1LV1616RBG-5SI#B0 application, or R1LV1616RBG-5SI#B0 equivalent, this page delivers verified package mapping (48-ball f-BGA, 7.5mm × 8.5mm, 0.75mm pitch), TTL-compatible I/O timing, byte-select control, and retention-mode behavior under CS1#/CS2#/LB#/UB# assertion - all confirmed from Renesas REJ03C0101-0400Z Rev.4.00.
Technical Context
This SRAM implements asynchronous, clockless operation with no refresh requirement, supporting both word (16-bit) and byte (8-bit) modes via LB#, UB#, and BYTE# (though BYTE# is not supported on the f-BGA variant). Address decoding covers A0–A19 (20-bit), enabling full 1M-word addressing in x16 mode or 2M-word in x8 mode using A−1 as LSB.
Three independent chip select inputs - CS1#, CS2, and implicit CS2-level control - enable hierarchical memory banking and low-power data retention states. Standby current drops to 2µA (typ.) at 3.0V when CS1# = VIH or CS2 = VIL, and data retention remains valid down to Vcc = 2.0V with tCDR ≤ 0 ns and tR ≤ 5 ms per retention waveform.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1,048,576 × 16-bit or 2,097,152 × 8-bit) |
| Access Time | 55 ns - defines maximum address-to-valid-data delay under 2.7–3.6V, Ta = −40°C to +85°C |
| Supply Voltage | 2.7–3.6 V - single-supply operation compatible with 3.3V logic systems |
| Standby Current | 2 µA (typ. at 3.0V, 25°C) - enables multi-year battery backup in off-state |
| Data Retention Voltage | 2.0 V minimum - guarantees data integrity during brown-out or backup battery operation |
| I/O Interface | TTL-compatible inputs/outputs - eliminates level-shifting in legacy 3.3V microcontroller designs |
| Process Technology | 0.15 µm CMOS - balances speed, leakage, and die size for compact embedded memory |
Pinout & Package
Package: 48-ball fine-pitch BGA (f-BGA), 7.5 mm × 8.5 mm, 0.75 mm ball pitch, 6 × 8 array. Ball map conforms to Renesas standard layout for R1LV1616R-series f-BGA variants; BYTE# is not implemented on this package.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting 1M-word x16 or 2M-word x8 configurations |
| DQ0–DQ15 | Bi-directional Data I/O | Common data bus with three-state outputs; OR-tie capable for bus sharing |
| CS1#, CS2 | Chip Select Inputs | Two-level decode: CS1# active-low primary enable; CS2 enables retention mode or secondary bank control |
| WE#, OE#, LB#, UB# | Control Inputs | Write Enable (active-low), Output Enable (active-low), Upper/Lower Byte Select (active-low) |
| Vcc, Vss | Power Supply | Single 2.7–3.6V supply; dual Vss balls provide noise isolation for I/O and core |
| NC | No Connect | Balls marked NC are internally unconnected - must be left floating or grounded per PCB design rules |
Key Features
| Feature | Design Value |
|---|---|
| No clock, no refresh | Eliminates system-level timing constraints and controller overhead for deterministic read/write latency |
| 2.0V data retention | Enables seamless transition to backup power without data loss during main supply interruption |
| Three-state OR-tie outputs | Allows direct connection of multiple SRAMs to shared data bus without external bus transceivers |
| Low 2µA standby current | Extends battery life in always-on monitoring devices such as smart sensors and portable test equipment |
| TTL-compatible signaling | Interoperates directly with legacy 3.3V microcontrollers, FPGAs, and ASICs without level translation |
Applications
| Portable Medical Instrumentation | Industrial PLC Data Logging |
|---|---|
Use Scenario: Battery-powered handheld ECG analyzer capturing real-time waveform data with local storage between wireless uploads. IC Role / Device Role / Timing Role: Primary non-refreshing buffer memory holding up to 16Mb of digitized analog samples prior to transmission. Use Value: 2µA standby current extends AA battery life beyond 12 months; 2.0V retention preserves data during battery swap. |
Use Scenario: DIN-rail mounted programmable logic controller recording sensor history and alarm events across 8-hour shifts. IC Role / Device Role / Timing Role: High-reliability scratchpad memory storing volatile process variables and fault logs with deterministic access. Use Value: 55ns access time supports fast scan-cycle execution; TTL compatibility simplifies interface to legacy ARM9-based control SoCs. |
| Avionics Health Monitoring Unit | Smart Energy Meter Firmware Cache |
Use Scenario: Compact airborne unit logging flight parameters (vibration, temperature, pressure) across multiple engines with cold-start capability. IC Role / Device Role / Timing Role: Radiation-tolerant-adjacent memory storing diagnostic snapshots during power-up and transient voltage dips. Use Value: Data retention at 2.0V ensures log integrity during 100ms input dropouts; f-BGA package withstands thermal cycling in avionics enclosures. |
Use Scenario: ANSI C12.20-compliant electricity meter caching firmware updates and tariff tables before secure flash programming. IC Role / Device Role / Timing Role: Secure, tamper-resistant working memory for cryptographic key expansion and AES-128 block operations. Use Value: No-refresh architecture prevents bit corruption during EMC transients; 48-ball f-BGA allows dense, shielded layout near secure MCU. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-voltage asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV1616AL-10TLI | 10ns access time, 3.3V only (3.135–3.465V), 48-pin TSOP-I package | Higher speed but narrower voltage range; lacks 2.0V retention and extended temp support | Select for cost-sensitive consumer designs where 10ns timing and 0–70°C operation suffice |
| AS6C1616-55PCN | 55ns access, 2.7–3.6V, 48-pin TSOP-I, 1.8µA standby (typ. at 3.0V) | Same speed/voltage but TSOP-I footprint; no f-BGA option; BYTE# supported | Choose when board space permits TSOP and byte-enable functionality is required |
Compared with IS61LV1616AL-10TLI and AS6C1616-55PCN, the R1LV1616RBG-5SI#B0 uniquely combines 55ns performance, −40°C to +85°C operation, 2.0V data retention, and f-BGA packaging - making it optimal for space-constrained, battery-backed industrial and aerospace edge nodes where reliability across voltage and temperature extremes is non-negotiable.
Availability
R1LV1616RBG-5SI#B0 is available at Aetrix Electronics and suitable for portable medical instrumentation, industrial PLC data logging, avionics health monitoring units, and smart energy meter firmware cache applications requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for R1LV1616RBG-5SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.
The R1LV1616R Series was designed specifically for ultra-low-power, battery-operated memory applications demanding high reliability, simple interface, and robust data retention - targeting portable instrumentation, industrial control, and mission-critical embedded systems.
FAQ
What is the operating temperature range for R1LV1616RBG-5SI#B0?
The R1LV1616RBG-5SI#B0 is rated for industrial temperature operation from −40°C to +85°C, as indicated by the "I" suffix in the part number per Renesas ordering information (REJ03C0101-0400Z p.2). This range is validated across all DC and AC specifications including 55ns access time, 2µA standby current, and 2.0V data retention voltage.
Does R1LV1616RBG-5SI#B0 support byte-mode operation?
Yes, the R1LV1616RBG-5SI#B0 supports 8-bit byte-mode operation using LB# and UB# signals to enable lower or upper data bytes, as confirmed in the Block Diagram (p.4) and Operating Table (p.5). However, the BYTE# pin is not implemented on the 48-ball f-BGA package - byte selection is controlled exclusively via LB# and UB#.
What is the minimum supply voltage required to retain data in R1LV1616RBG-5SI#B0?
The R1LV1616RBG-5SI#B0 guarantees data retention down to Vcc = 2.0V, as specified in the Data Retention Characteristics table (p.15) and referenced in the device description (p.1). At this voltage, retention current is 6µA (typ.) at 25°C, and recovery time tR is ≤5 ms after Vcc restoration.
Is R1LV1616RBG-5SI#B0 pin-compatible with other packages in the R1LV1616R family?
No - the R1LV1616RBG-5SI#B0 uses a 48-ball f-BGA package (7.5mm × 8.5mm, 0.75mm pitch), while other variants use 52-pin µTSOP or 48-pin TSOP-I. Pin functions are consistent across packages (e.g., A0–A19, DQ0–DQ15, CS1#, WE#), but physical layout, ball/pad count, and BYTE# availability differ. PCB redesign is required for package substitution.
How does the standby current of R1LV1616RBG-5SI#B0 compare to similar SRAMs?
The R1LV1616RBG-5SI#B0 achieves 2µA typical standby current at 3.0V and 25°C (p.6), which is among the lowest in its class. For comparison, IS61LV1616AL-10TLI specifies 25µA, and AS6C1616-55PCN specifies 1.8µA - making R1LV1616RBG-5SI#B0 especially suited for multi-year battery operation in remote sensing nodes.
R1LV1616RBG-5SI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TFBGA (7.5x8.5)
R1LV1616RBG-5SI#B0 FAQ
1.How can I place an order for R1LV1616RBG-5SI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV1616RBG-5SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV1616RBG-5SI#B0 reliable?
The price and inventory of R1LV1616RBG-5SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV1616RBG-5SI#B0 is usually 5 days.
3.What payment methods are accepted for R1LV1616RBG-5SI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV1616RBG-5SI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV1616RBG-5SI#B0?
R1LV1616RBG-5SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV1616RBG-5SI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV1616RBG-5SI#B0?
For technical support, including R1LV1616RBG-5SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV1616RBG-5SI#B0 requirements.
6.How does Aetrix verify that R1LV1616RBG-5SI#B0 is sourced from the original manufacturer or authorized distributors?
All R1LV1616RBG-5SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV1616RBG-5SI#B0 meets industry standards.
7.What is the process for return or replacement of R1LV1616RBG-5SI#B0?
All R1LV1616RBG-5SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV1616RBG-5SI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV1616RBG-5SI#B0 part is unused and in its original packaging.
Return procedure for R1LV1616RBG-5SI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV1616RBG-5SI#B0 Tags
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