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Renesas R1LV1616RBG-7SI#B0
- Part No.:
- R1LV1616RBG-7SI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
R1LV1616RBG-7SI#B0.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48TFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,107
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Product details
Overview
R1LV1616RBG-7SI#B0 from Renesas Electronics is a 16Mb low-power static RAM organized as 1M × 16-bit (or 2M × 8-bit), fabricated in 0.15µm CMOS, operating from 2.7–3.6V with 70ns access time and 2µA standby current at 3.0V. It supports battery backup operation and TTL-compatible interfacing, and is used in portable instrumentation, industrial controllers, and embedded systems requiring non-refresh, low-leakage memory.
For engineers reviewing the R1LV1616RBG-7SI#B0 datasheet, R1LV1616RBG-7SI#B0 pinout, R1LV1616RBG-7SI#B0 application, or R1LV1616RBG-7SI#B0 equivalent, key selection criteria include its 70ns read access time, 2.0V data retention voltage, µTSOP-52 package with BYTE# support, and dual-byte enable architecture for flexible x8/x16 mode operation.
Technical Context
This device implements a fully asynchronous SRAM architecture with no clocks or refresh cycles required. Its memory array is organized as 1,048,576 words × 16 bits, supporting both word and byte modes via LB#/UB# and optional BYTE# control-available only on TSOP and µTSOP packages like the R1LV1616RBG-7SI#B0.
Three independent chip select inputs (CS1#, CS2, and implicit CS via LB#/UB#) enable hierarchical memory expansion. Data retention is guaranteed down to 2.0V with standby current as low as 2µA at 3.0V, making it suitable for battery-backed applications where power integrity during brownout is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1,048,576 × 16 or 2,097,152 × 8) |
| Access Time | 70 ns - defines maximum address-to-valid-data delay under specified Vcc/Ta conditions |
| Supply Voltage | 2.7–3.6 V - enables direct interface with 3.3V logic and compatibility with Li-ion battery discharge profiles |
| Standby Current | 2 µA at 3.0V, 25°C - ensures multi-year battery backup without periodic refresh |
| Data Retention Voltage | 2.0 V minimum - guarantees data integrity during deep brownout or battery switchover |
| Input/Output Interface | TTL-compatible - eliminates level-shifting requirements when interfacing with legacy microcontrollers |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade embedded environments |
Pinout & Package
The R1LV1616RBG-7SI#B0 is packaged in a 52-pin µTSOP (II) measuring 10.79 mm × 10.49 mm with 0.4 mm pitch, featuring BYTE# support for x8 mode operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1M-word addressing in x16 mode |
| DQ0–DQ15 | Bi-directional Data I/O | 16-bit common data bus; three-state outputs enable OR-tie bus sharing |
| CS1#, CS2 | Chip Select Inputs | Two independent enables allow hierarchical decoding and memory banking |
| LB#, UB# | Lower/Upper Byte Enables | Enable x8 mode writes/reads to DQ0–7 or DQ8–15 independently |
| BYTE# | Byte Mode Select | When low, configures device for x8 operation; supported only on µTSOP/TSOP packages |
| WE#, OE# | Write Enable / Output Enable | Asynchronous controls: WE# initiates write; OE# gates output drivers to prevent bus contention |
| Vcc, Vss | Power Supply Pins | Single 2.7–3.6V supply; Vss is ground reference for all signals and I/O |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates system-level DRAM controller overhead and timing complexity |
| 2.0V data retention | Preserves memory contents during extended power loss or battery depletion |
| OR-tie capable outputs | Enables direct wire-OR connection of multiple SRAMs on shared data bus without external logic |
| Easy memory expansion | CS1#, CS2, LB#, and UB# support seamless banked or interleaved memory mapping |
| TTL-compatible I/O | Direct interface with 3.3V microcontrollers, FPGAs, and ASICs without level translators |
Applications
| Portable Medical Monitors | Industrial PLC Data Buffers |
|---|---|
Use Scenario: Real-time acquisition and temporary storage of ECG waveforms during battery-powered operation. IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-latency, non-volatile-critical buffer memory between ADC and low-power MCU. Use Value: 2µA standby current and 2.0V data retention ensure waveform integrity across multi-hour battery cycles without refresh circuitry. | Use Scenario: Storing runtime variables, ladder logic state, and I/O image data in compact programmable logic controllers. IC Role / Device Role / Timing Role: Primary working memory interfaced directly to 3.3V ARM Cortex-M7-based control engine. Use Value: 70ns access time meets deterministic scan-cycle timing; TTL compatibility avoids signal-integrity penalties from level shifters. |
| Automotive Infotainment Head Units | Test & Measurement Equipment |
Use Scenario: Caching UI assets and audio metadata during cold-start sequences where main SoC is not yet active. IC Role / Device Role / Timing Role: Standby-resident memory holding boot-critical configuration and firmware fragments. Use Value: –40°C to +85°C rating and 2.0V retention guarantee operation through automotive thermal transients and ignition brownouts. | Use Scenario: High-speed waveform capture buffer in digital oscilloscopes and logic analyzers with battery-backed save-to-flash capability. IC Role / Device Role / Timing Role: High-bandwidth, low-latency memory staging raw sample data before compression and storage. Use Value: 16-bit bus width and 70ns cycle time support >14 MB/s sustained read/write throughput for real-time acquisition. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV1616AL-70TQLI | 70ns access, 2.7–3.6V, 52-pin TSOP-I, no BYTE# pin | Lacks BYTE# support; requires external logic for x8 mode | Choose when x8 mode is unused and footprint compatibility with TSOP-I is required |
| AS6C1616-70BIN | 70ns access, 2.7–3.6V, 48-pin TSOP-I, no BYTE# or CS2 | Single CS input; no hierarchical chip select or byte-mode flexibility | Prefer for cost-sensitive designs with simple memory maps and no expansion needs |
Compared with IS61LV1616AL-70TQLI and AS6C1616-70BIN, the R1LV1616RBG-7SI#B0 offers unique BYTE#-enabled x8/x16 mode switching and dual CS inputs for scalable memory architectures-critical for systems requiring field-upgradable firmware partitions or mixed-width peripheral interfaces.
Availability
R1LV1616RBG-7SI#B0 is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, and automotive infotainment head units requiring stable component supply across extended product lifecycles.
Supply support for R1LV1616RBG-7SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV1616R Series was designed specifically for battery-operated and battery-backed embedded systems demanding ultra-low standby power, wide supply tolerance, and robust data retention-targeting portable instrumentation, industrial controllers, and safety-critical data logging.
FAQ
What is the maximum operating temperature range for the R1LV1616RBG-7SI#B0?
The R1LV1616RBG-7SI#B0 is rated for operation from –40°C to +85°C, meeting industrial-grade thermal requirements. This specification is confirmed in the Ordering Information table on page 2 of the REJ03C0101-0400Z datasheet, where the "I" suffix denotes the extended temperature grade. The device maintains full functionality-including 70ns access time and 2µA standby current-across this full range when powered within 2.7–3.6V.
Does the R1LV1616RBG-7SI#B0 support x8 mode operation?
Yes, the R1LV1616RBG-7SI#B0 supports x8 mode via the BYTE# pin, which is explicitly enabled on µTSOP and TSOP packages per the Pin Description table (page 4) and BYTE# Timing Waveform section (page 10). When BYTE# = L, the device operates in 2M × 8-bit configuration using DQ0–DQ7 for data, with LB# and UB# controlling lower/upper byte access. This feature is absent in f-BGA variants but fully functional on the R1LV1616RBG-7SI#B0's 52-pin µTSOP package.
What is the minimum supply voltage required to retain data in the R1LV1616RBG-7SI#B0?
The R1LV1616RBG-7SI#B0 guarantees data retention down to 2.0V, as specified in the Data Retention Characteristics table (page 15) and confirmed in the Features list (page 1). At Vcc ≥ 2.0V and with appropriate control pin states (e.g., LB#/UB# ≥ Vcc−0.2V or CS1# ≥ Vcc−0.2V), the device holds stored data indefinitely in standby-enabling reliable operation during battery sag or power-fail scenarios without external capacitors or backup supplies.
How does the R1LV1616RBG-7SI#B0 handle bus contention during read operations?
The R1LV1616RBG-7SI#B0 prevents bus contention using OE# (Output Enable) control: when OE# is high, all DQ pins enter high-impedance state regardless of CS or WE# status. This is documented in the Operating Table (page 5) and DC Characteristics (page 6), where IOH/IOZ specs confirm three-state behavior. Combined with OR-tie capable outputs, this allows safe connection of multiple R1LV1616RBG-7SI#B0 devices to a shared data bus without external bus transceivers.
Is the R1LV1616RBG-7SI#B0 pin-compatible with other members of the R1LV1616R Series?
Yes-the R1LV1616RBG-7SI#B0 shares identical pinout and package dimensions (52-pin µTSOP-II, 10.79 mm × 10.49 mm) with other R1LV1616R variants in the same package type, including R1LV1616RSA-7S% and R1LV1616RSD-7S%. Pin compatibility is verified in the Pin Arrangement diagram (page 3) and Package section (page 1), confirming consistent A0–A19, DQ0–DQ15, CS1#, CS2, LB#, UB#, BYTE#, WE#, OE#, Vcc, and Vss placement across all µTSOP versions of the series.
R1LV1616RBG-7SI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tray
- Product Status:
- Not For New Designs
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TFBGA (7.5x8.5)
R1LV1616RBG-7SI#B0 FAQ
1.How can I place an order for R1LV1616RBG-7SI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV1616RBG-7SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV1616RBG-7SI#B0 reliable?
The price and inventory of R1LV1616RBG-7SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV1616RBG-7SI#B0 is usually 5 days.
3.What payment methods are accepted for R1LV1616RBG-7SI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV1616RBG-7SI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV1616RBG-7SI#B0?
R1LV1616RBG-7SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV1616RBG-7SI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV1616RBG-7SI#B0?
For technical support, including R1LV1616RBG-7SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV1616RBG-7SI#B0 requirements.
6.How does Aetrix verify that R1LV1616RBG-7SI#B0 is sourced from the original manufacturer or authorized distributors?
All R1LV1616RBG-7SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV1616RBG-7SI#B0 meets industry standards.
7.What is the process for return or replacement of R1LV1616RBG-7SI#B0?
All R1LV1616RBG-7SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV1616RBG-7SI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV1616RBG-7SI#B0 part is unused and in its original packaging.
Return procedure for R1LV1616RBG-7SI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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