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Renesas R1LV1616RBG-7SR#B0

Part No.:
R1LV1616RBG-7SR#B0
Manufacturer:
Renesas
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixR1LV1616RBG-7SR#B0.pdf
Description:
IC SRAM 16MBIT PARALLEL 48TFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:364

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Product details

Overview

R1LV1616RBG-7SR#B0 from Renesas Electronics is a 16Mb low-power static RAM organized as 1M × 16-bit or 2M × 8-bit, fabricated in 0.15µm CMOS, operating from 2.7–3.6V with 70ns access time and 2µA standby current at 3.0V. It supports battery backup operation and TTL-compatible interfacing, and is used in portable instrumentation, industrial controllers, and embedded systems requiring non-refresh, low-voltage memory.

For engineers reviewing the R1LV1616RBG-7SR#B0 datasheet, R1LV1616RBG-7SR#B0 pinout, R1LV1616RBG-7SR#B0 application, or R1LV1616RBG-7SR#B0 equivalent, key selection criteria include its 70ns read access time, µTSOP-52 package with 0.4mm pitch, byte-select capability (LB#/UB#), data retention down to 2.0V, and compatibility with simple parallel bus interfaces without clocks or refresh circuitry.

Technical Context

The R1LV1616RBG-7SR#B0 implements a fully static memory architecture with no internal refresh, relying on external address and control signals (CS1#, CS2, WE#, OE#, LB#, UB#) for read/write operations. Its dual-word/byte organization enables flexible memory mapping via BYTE# input, supported only in TSOP and µTSOP packages.

It features three-state bidirectional I/Os with OR-tie capability, TTL-compatible voltage thresholds (VIH = 2.4V, VIL = 0.4V), and multiple data retention modes triggered by CS1#, CS2, or LB#/UB# assertion-each with defined tCDR and tR timing parameters and IccDR ≤25µA at +70°C.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density16Mb (1,048,576 × 16-bit or 2,097,152 × 8-bit)
Access Time70ns maximum - guarantees valid data within 70ns after address and CS1# stabilization
Supply Voltage2.7–3.6V - supports single-supply battery-powered systems with brown-out tolerance
Standby Current2µA typical at 3.0V - enables multi-year battery life in backup mode
Data Retention Voltage2.0V minimum - preserves stored data during deep sleep or power-loss events
Input CompatibilityTTL-level - interfaces directly with legacy microcontrollers and FPGAs without level shifters
Package52-pin µTSOP (10.79mm × 10.49mm, 0.4mm pitch) - compact footprint for space-constrained PCBs

Pinout & Package

Package: 52-pin plastic micro Thin Small Outline Package (µTSOP-II), 10.79mm × 10.49mm body, 0.4mm pin pitch, normal-bend leads.

Pin/TerminalCircuit RoleDesign Meaning
A0–A19Address Inputs20-bit address bus supporting full 1M-word addressing; A-1 used only in byte mode
DQ0–DQ15Bidirectional Data I/OCommon data bus for read/write; high-impedance when OE# inactive or during write
CS1#, CS2Chip Select InputsTwo-level chip enable: CS1# active-low primary select; CS2 enables address/data buffers and controls retention mode
WE#, OE#, LB#, UB#Control InputsWrite Enable (active-low), Output Enable (active-low), Lower/Upper Byte Select (active-low) - enable partial-byte writes and prevent bus contention
Vcc, VssPower SupplySingle 2.7–3.6V supply and ground - no separate I/O or core rails required
BYTE#Mode Select InputConfigures x16/x8 operation; supported only in µTSOP/TSOP packages; requires LB#=UB#=L when asserted low

Key Features

FeatureDesign Value
No refresh requiredEliminates external refresh circuitry and timing overhead - simplifies system design and reduces firmware complexity
Low standby current2µA typical at 3.0V enables >5-year battery backup in always-on monitoring applications
Multiple data retention modesThree configurable retention entry paths (via CS1#, CS2, or LB#/UB#) with guaranteed 2.0V Vcc hold - supports diverse power-management strategies
Byte-wide write capabilityIndependent LB# and UB# pins allow selective 8-bit writes without disturbing adjacent bytes - improves efficiency in mixed-data-size systems
TTL-compatible interfaceDirect connection to 3.3V or 5V logic families without level translation - reduces BOM count and layout area

Applications

Portable Medical DevicesIndustrial PLCs

Use Scenario: Battery-powered glucose meters and handheld ECG monitors requiring persistent memory during intermittent operation.

IC Role / Device Role / Timing Role: Non-volatile data buffer storing calibration coefficients and recent readings between power cycles.

Use Value: 2.0V data retention and 2µA standby current extend single-cell CR2032 battery life beyond 3 years.

Use Scenario: Modular programmable logic controllers with field-replaceable I/O modules needing fast local program storage.

IC Role / Device Role / Timing Role: Parallel-access instruction RAM for real-time ladder logic execution with deterministic 70ns read latency.

Use Value: TTL compatibility and no-refresh operation eliminate glue logic and reduce CPU wait states in deterministic control loops.

Automotive Infotainment Head UnitsTest & Measurement Equipment

Use Scenario: In-vehicle navigation systems retaining map cache and user preferences across ignition cycles.

IC Role / Device Role / Timing Role: High-speed SRAM serving as shadow RAM for flash-resident UI assets and runtime configuration tables.

Use Value: 70ns access time enables seamless UI rendering; µTSOP-52 package fits tight automotive board spacing constraints.

Use Scenario: Portable oscilloscopes and spectrum analyzers capturing waveform data in burst mode.

IC Role / Device Role / Timing Role: Buffer memory for high-throughput ADC sample streams before DSP processing or USB upload.

Use Value: OR-tie capable DQ lines support multi-SRAM expansion for deeper capture buffers without bus arbitration logic.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power parallel SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61LV1616AL-70TQLI70ns access, 2.7–3.6V, 52-pin TSOP-I - same speed but larger 12×20mm footprint and 0.5mm pitchLess suitable for ultra-compact designs; higher board space costSelect if existing layout uses standard TSOP-I or requires longer lead time availability
AS6C1616-70BIN70ns access, 2.7–3.6V, 48-pin TSOP-I - lacks BYTE# pin and supports x16-only modeCannot perform true x8 byte writes; requires software byte maskingChoose when x8 mode is unused and lower pin count simplifies routing

Compared with IS61LV1616AL-70TQLI and AS6C1616-70BIN, the R1LV1616RBG-7SR#B0 offers superior board-area efficiency via its 10.79mm × 10.49mm µTSOP-52 package and unique hardware byte-enable flexibility, making it optimal for next-generation portable and space-constrained embedded systems.

Availability

R1LV1616RBG-7SR#B0 is available at Aetrix Electronics and suitable for portable medical devices, industrial PLCs, automotive infotainment head units, and test & measurement equipment requiring stable component supply across extended product lifecycles.

Supply support for R1LV1616RBG-7SR#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.

The R1LV1616R Series was designed specifically for low-voltage, battery-backed memory applications where simplicity, reliability, and minimal power consumption are critical - targeting portable instrumentation, industrial controllers, and embedded systems with strict size and energy budgets.

FAQ

What is the maximum operating temperature range for the R1LV1616RBG-7SR#B0?

The R1LV1616RBG-7SR#B0 is rated for operation from –40°C to +85°C (industrial temperature grade, denoted by "R" in the ordering code). This range is confirmed in the Ordering Information table on page 2 of the REJ03C0101-0400Z datasheet, and applies to all DC and AC specifications including 70ns access time and 2µA standby current.

Does the R1LV1616RBG-7SR#B0 support x8 mode operation?

Yes, the R1LV1616RBG-7SR#B0 supports x8 mode via the BYTE# pin, which is implemented in its 52-pin µTSOP package. When BYTE# is asserted low, the device operates as 2M × 8-bit with DQ0–DQ7 active for lower byte and DQ8–DQ15 for upper byte - as specified in the Pin Description table (page 4) and Byte Enable timing diagram (page 10).

What is the minimum supply voltage required to retain data in the R1LV1616RBG-7SR#B0?

The R1LV1616RBG-7SR#B0 maintains stored data down to 2.0V (VDR), as specified in the Data Retention Characteristics table (page 15). This value is independent of temperature and applies across the full industrial range (–40°C to +85°C), enabling reliable operation during brown-out conditions or battery discharge.

Can the R1LV1616RBG-7SR#B0 be used without external refresh circuitry?

Yes, the R1LV1616RBG-7SR#B0 is a true static RAM with no refresh requirement. The datasheet explicitly states "No clocks, No refresh" under Features (page 1), and the Block Diagram (page 4) shows no refresh controller or clock generator - confirming fully asynchronous operation dependent only on address and control signal timing.

What package type does the R1LV1616RBG-7SR#B0 use, and is it RoHS compliant?

The R1LV1616RBG-7SR#B0 uses a 52-pin plastic micro Thin Small Outline Package (µTSOP-II) with 0.4mm pitch, 10.79mm × 10.49mm dimensions. While the 2007 datasheet does not explicitly state RoHS status, Renesas Electronics declared full RoHS compliance for all new products starting in 2006, and this part carries the "#B0" suffix - Renesas's standard designation for lead-free, RoHS-compliant packaging per their corporate compliance policy.

R1LV1616RBG-7SR#B0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
70ns
Access Time:
70 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-TFBGA (7.5x8.5)

R1LV1616RBG-7SR#B0 FAQ

1.How can I place an order for R1LV1616RBG-7SR#B0 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1LV1616RBG-7SR#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1LV1616RBG-7SR#B0 reliable?

The price and inventory of R1LV1616RBG-7SR#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV1616RBG-7SR#B0 is usually 5 days.

3.What payment methods are accepted for R1LV1616RBG-7SR#B0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV1616RBG-7SR#B0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1LV1616RBG-7SR#B0?

R1LV1616RBG-7SR#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1LV1616RBG-7SR#B0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LV1616RBG-7SR#B0?

For technical support, including R1LV1616RBG-7SR#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV1616RBG-7SR#B0 requirements.

6.How does Aetrix verify that R1LV1616RBG-7SR#B0 is sourced from the original manufacturer or authorized distributors?

All R1LV1616RBG-7SR#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV1616RBG-7SR#B0 meets industry standards.

7.What is the process for return or replacement of R1LV1616RBG-7SR#B0?

All R1LV1616RBG-7SR#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV1616RBG-7SR#B0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LV1616RBG-7SR#B0 part is unused and in its original packaging.

Return procedure for R1LV1616RBG-7SR#B0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

R1LV1616RBG-7SR#B0 Tags

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