Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas R1LV1616RSA-8SI#B0

Part No.:
R1LV1616RSA-8SI#B0
Manufacturer:
Renesas
Category:
Memory
Package:
-
Datasheet:
AetrixR1LV1616RSA-8SI#B0.pdf
Description:
STANDARD SRAM, 1MX16
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,658

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

R1LV1616RSA-8SI#B0 from Renesas Electronics is a 16Mb low-power static RAM organized as 1M × 16-bit or 2M × 8-bit, fabricated in 0.15µm CMOS, operating from 2.7V to 3.6V with 85ns access time and 2µA standby current at 3.0V, used in battery-backed memory subsystems for portable instrumentation and industrial controllers.

For engineers reviewing the R1LV1616RSA-8SI#B0 datasheet, R1LV1616RSA-8SI#B0 pinout, R1LV1616RSA-8SI#B0 application, or R1LV1616RSA-8SI#B0 equivalent, this page delivers verified package mapping (48-pin TSOP-I), byte-select timing behavior, data retention voltage (2.0V), TTL-compatible I/O, and CS1#/CS2# dual-chip-select architecture for memory expansion.

Technical Context

The R1LV1616RSA-8SI#B0 implements a fully asynchronous SRAM architecture with no clocks or refresh required, supporting both word (16-bit) and byte (8-bit) modes via LB#/UB# and BYTE# control. Its dual chip-select logic (CS1# active-low, CS2 active-high) enables hierarchical memory banking and seamless expansion across multiple devices.

It uses TTL-compatible input thresholds (VIH ≥ 2.4V, VIL ≤ 0.4V) and provides three-state outputs with OR-tie capability. Standby entry is triggered by asserting CS2 ≤ 0.2V or CS1# ≥ Vcc−0.2V, achieving 2µA typical current at 3.0V and −40°C to +85°C operation.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density16 Mbit (1,048,576 × 16 or 2,097,152 × 8)
Supply Voltage2.7–3.6 V - supports single-supply battery operation with 2.0 V minimum for data retention
Access Time85 ns - defines maximum address-to-valid-data delay under worst-case Vcc/Ta conditions
Standby Current2 µA typ. at 3.0 V, 25°C - enables multi-year battery backup in off-state
Operating Temp−40°C to +85°C - qualified for extended industrial environments
I/O InterfaceTTL-compatible - eliminates level-shifting in legacy 3.3V microcontroller systems
Package48-pin TSOP-I (12 mm × 20 mm, 0.5 mm pitch) - surface-mount compatible with standard reflow profiles

Pinout & Package

Package: 48-pin plastic TSOP-I (Type 48P3R), normal-bend, 12 mm × 20 mm body, 0.5 mm lead pitch.

Pin/TerminalCircuit RoleDesign Meaning
A0–A19Address Input20-bit address bus supporting full 1M-word decoding; A19 enables 2M×8 mode when BYTE#=L
DQ0–DQ15Data I/OBi-directional 16-bit common bus; high-impedance when OE#=H or during write
CS1#, CS2Chip SelectCS1# active-low + CS2 active-high enable device; dual select allows bank isolation and expansion
OE#, WE#, LB#, UB#, BYTE#Control InputsOE# gates output drivers; WE# controls write; LB#/UB# select byte lanes; BYTE# enables x8 mode (TSOP only)
Vcc, VssPower SupplySingle 2.7–3.6 V supply; Vss = ground reference for all signals and internal logic

Key Features

FeatureDesign Value
No clock, no refreshEliminates system-level timing overhead and simplifies controller firmware for deterministic access
2.0 V data retention voltagePreserves memory contents during brown-out or battery-swapping without external backup circuitry
OR-tie capable outputsEnables direct wire-OR connection of multiple SRAM outputs to shared data bus without external logic
Byte-wide and word-wide operationSupports flexible data path design: 8-bit microcontrollers use BYTE#/LB#/UB#; 16-bit systems use full DQ0–DQ15
Low 2 µA standby currentExtends battery life in always-on monitoring nodes where memory must retain state between wake cycles

Applications

Portable Medical MonitorIndustrial PLC Data Logger

Use Scenario: Battery-powered ECG monitor storing waveform snapshots during intermittent wireless transmission.

IC Role / Device Role / Timing Role: Non-volatile frame buffer holding up to 16 seconds of 1kS/s sampled data before upload.

Use Value: 2.0 V data retention ensures zero data loss during battery replacement; 85 ns access meets real-time display update deadlines.

Use Scenario: DIN-rail mounted controller logging sensor values every 100 ms into circular buffer memory.

IC Role / Device Role / Timing Role: High-reliability scratchpad memory interfaced to ARM9-based host via 16-bit parallel bus.

Use Value: Dual CS# inputs allow co-location with flash and I/O peripherals on same bus; −40°C to +85°C rating ensures field uptime.

Smart Meter Firmware CacheAvionics Test Equipment Buffer

Use Scenario: Electricity meter caching tariff tables and usage history during power outages.

IC Role / Device Role / Timing Role: Retentive configuration store accessed only during boot or firmware update sequences.

Use Value: 2 µA standby current minimizes self-discharge of backup supercapacitor; TTL compatibility avoids level shifters.

Use Scenario: Portable flight-line tester capturing ARINC 429 bus traffic for post-analysis.

IC Role / Device Role / Timing Role: High-speed capture buffer synchronized to FPGA logic with precise OE#/WE# timing control.

Use Value: 85 ns tAA and tRC support sustained 11.8 MB/s read/write throughput; TSOP-I package enables compact PCB layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power parallel SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61LV25616AL-10TLI10 ns faster access (75 ns), 3.3 V only, same 48-pin TSOP-I packageRequires tighter timing margins; not rated for −40°C operationSelect when system clock budget permits sub-85 ns latency and temperature range is limited to 0°C–70°C
AS6C4008-70TINSlower 70 ns access, wider 2.7–5.5 V supply range, 44-pin SOJ packageSOJ footprint incompatible with TSOP-I layout; higher 5 mA active currentChoose only if board redesign accommodates SOJ and broader voltage tolerance is critical

Compared with IS61LV25616AL-10TLI and AS6C4008-70TIN, the R1LV1616RSA-8SI#B0 uniquely balances industrial temperature support, ultra-low standby current, and pin-compatible expandability via CS1#/CS2#, making it optimal for battery-critical embedded systems where layout reuse and long-term data integrity are mandatory.

Availability

R1LV1616RSA-8SI#B0 is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data loggers, smart meter firmware caches, and avionics test equipment requiring stable component supply across extended temperature ranges and low-power operation.

Supply support for R1LV1616RSA-8SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.

The R1LV1616R Series was designed specifically for low-voltage, battery-operated memory applications demanding simple interface, long data retention, and minimal standby power - targeting portable instrumentation and ruggedized industrial control systems.

FAQ

What is the minimum supply voltage required to retain data in R1LV1616RSA-8SI#B0?

The R1LV1616RSA-8SI#B0 guarantees data retention down to 2.0 V on Vcc, as specified in the Data Retention Characteristics table. This allows uninterrupted memory hold during brown-out events or battery voltage sag, provided all control inputs (CS1#, CS2, LB#, UB#, OE#, WE#) remain in valid logic states per the retention timing waveforms.

Does R1LV1616RSA-8SI#B0 support true 8-bit operation, and how is it enabled?

Yes, R1LV1616RSA-8SI#B0 supports true 8-bit operation via BYTE# pin assertion (LOW). When BYTE#=L, the device operates in 2M × 8-bit mode using A0–A18 for addressing and DQ0–DQ7 for data; LB# and UB# become inactive. This mode is supported only on TSOP and µTSOP packages - not f-BGA - and requires LB#=UB#=L per datasheet note.

What is the function of the dual chip-select pins CS1# and CS2 on R1LV1616RSA-8SI#B0?

CS1# (active-low) and CS2 (active-high) provide independent enable control: the device activates only when CS1# is LOW and CS2 is HIGH. This dual-signal scheme prevents spurious activation during power-up/down transients and enables hierarchical memory mapping - e.g., CS2 selects a memory bank while CS1# selects individual devices within that bank - improving noise immunity and expandability.

Can R1LV1616RSA-8SI#B0 be used in systems with 5V-tolerant microcontrollers?

No, R1LV1616RSA-8SI#B0 is strictly a 2.7–3.6 V device with TTL-compatible inputs (VIH ≥ 2.4 V, VIL ≤ 0.4 V); it is not 5V-tolerant. Direct connection to 5V I/O microcontrollers will exceed absolute maximum ratings and risk damage. Level translation (e.g., TXB0108 or discrete resistors) is required for safe interfacing with 5V logic families.

How does the standby current of R1LV1616RSA-8SI#B0 compare across temperature and voltage?

R1LV1616RSA-8SI#B0 standby current (ISB1) increases with temperature: 6 µA typical at +25°C, 12 µA at +40°C, 25 µA at +70°C, and 40 µA at +85°C - all measured at 3.0 V. At lower Vcc (2.7 V), current drops ~25%; at higher Vcc (3.6 V), it rises ~20%. These values assume CS2 ≤ 0.2 V or CS1# ≥ Vcc−0.2 V per the recommended standby condition.

R1LV1616RSA-8SI#B0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
-
Memory Format:
-
Technology:
-
Memory Size:
-
Memory Organization:
-
Memory Interface:
-
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

R1LV1616RSA-8SI#B0 FAQ

1.How can I place an order for R1LV1616RSA-8SI#B0 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1LV1616RSA-8SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1LV1616RSA-8SI#B0 reliable?

The price and inventory of R1LV1616RSA-8SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV1616RSA-8SI#B0 is usually 5 days.

3.What payment methods are accepted for R1LV1616RSA-8SI#B0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV1616RSA-8SI#B0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1LV1616RSA-8SI#B0?

R1LV1616RSA-8SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1LV1616RSA-8SI#B0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LV1616RSA-8SI#B0?

For technical support, including R1LV1616RSA-8SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV1616RSA-8SI#B0 requirements.

6.How does Aetrix verify that R1LV1616RSA-8SI#B0 is sourced from the original manufacturer or authorized distributors?

All R1LV1616RSA-8SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV1616RSA-8SI#B0 meets industry standards.

7.What is the process for return or replacement of R1LV1616RSA-8SI#B0?

All R1LV1616RSA-8SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV1616RSA-8SI#B0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LV1616RSA-8SI#B0 part is unused and in its original packaging.

Return procedure for R1LV1616RSA-8SI#B0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

R1LV1616RSA-8SI#B0 Tags

  • R1LV1616RSA-8SI#B0
  • R1LV1616RSA-8SI#B0 PDF
  • R1LV1616RSA-8SI#B0 Datasheet
  • R1LV1616RSA-8SI#B0 Specifications
  • R1LV1616RSA-8SI#B0 Images
  • Renesas
  • Renesas R1LV1616RSA-8SI#B0
  • Buy R1LV1616RSA-8SI#B0
  • R1LV1616RSA-8SI#B0 Price
  • R1LV1616RSA-8SI#B0 Distributor
  • R1LV1616RSA-8SI#B0 Supplier
  • R1LV1616RSA-8SI#B0 Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER