My Inquiry
My Account
Renesas R1LV1616RSD-5SI#B0
- Part No.:
- R1LV1616RSD-5SI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 52-TFSOP (0.350", 8.89mm Width)
- Datasheet:
-
R1LV1616RSD-5SI#B0.pdf
- Description:
- IC SRAM 16MBIT PAR 52TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:2,366
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
R1LV1616RSD-5SI#B0 from Renesas Electronics is a 16Mb low-power static RAM organized as 1M × 16-bit (or 2M × 8-bit), fabricated in 0.15µm CMOS, operating from 2.7–3.6V with 55ns access time and 2µA standby current at 3.0V - deployed in battery-backed memory subsystems for portable instrumentation and industrial control units.
For engineers reviewing the R1LV1616RSD-5SI#B0 datasheet, R1LV1616RSD-5SI#B0 pinout, R1LV1616RSD-5SI#B0 application, or R1LV1616RSD-5SI#B0 equivalent, key selection criteria include TTL-compatible I/O, byte-select capability (LB#/UB#), no-refresh operation, data retention down to 2.0V, and µTSOP-52 packaging with 0.4mm pitch for high-density PCB layouts.
Technical Context
This SRAM implements a fully asynchronous interface with dual chip select (CS1#, CS2), independent upper/lower byte enables (UB#, LB#), and output enable (OE#) for bus contention control. Its architecture supports both word (16-bit) and byte (8-bit) modes via BYTE# input, with address range A0–A19 covering 1M words and DQ0–DQ15 as bidirectional common I/O lines.
Three distinct data retention entry methods are supported: LB#/UB#-controlled, CS1#-controlled, or CS2-controlled - each requiring specific voltage thresholds and timing (tCDR ≤ 0 ns, tR ≤ 5 ms). The device uses no clocks or refresh circuitry, eliminating system-level timing overhead while maintaining data integrity during power brownouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16 Mbit (1,048,576 × 16-bit or 2,097,152 × 8-bit) - enables compact code/data storage without external multiplexing logic |
| Access Time | 55 ns (max) - guarantees deterministic read latency for real-time control loops and interrupt service routines |
| Supply Voltage | 2.7–3.6 V - compatible with single-cell Li-ion and regulated 3.3V rails, eliminating need for level shifters |
| Standby Current | 2 µA typ. at 3.0 V - extends battery life in always-on monitoring systems by >100× vs. standard SRAM |
| Data Retention Voltage | 2.0 V min - preserves memory contents during deep sleep or backup battery operation |
| Input/Output Interface | TTL-compatible (VIH = 2.4 V, VIL = 0.4 V) - interoperable with legacy microcontrollers and FPGAs without translation |
| Package | 52-pin µTSOP (10.79 mm × 10.49 mm, 0.4 mm pitch) - supports fine-pitch routing and thermal relief in space-constrained modules |
Pinout & Package
52-pin µTSOP (350-mil) package with 0.4 mm pitch, normal-bend lead configuration (52PTG). Pin numbering follows standard JEDEC outline with A0–A19 address inputs, DQ0–DQ15 bidirectional data I/O, and dedicated control signals including CS1#, CS2, WE#, OE#, LB#, UB#, BYTE#, and Vcc/Vss.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Input | 20-bit address bus supporting full 1M-word addressing; A18/A19 used only in x16 mode |
| DQ0–DQ15 | Data I/O | Common bidirectional bus; DQ15 doubles as A−1 in x8 mode when BYTE# = L |
| CS1#, CS2 | Chip Select | Two independent enables: CS1# active-low primary select; CS2 enables retention mode or secondary decode |
| WE#, OE#, LB#, UB# | Control Inputs | Write Enable (active-low), Output Enable (active-low), Upper/Lower Byte Select (active-low) - enable partial writes and bus isolation |
| BYTE# | Mode Select | Configures x16/x8 operation; supported only on µTSOP/TSOP packages; requires LB#=UB#=L when asserted low |
| Vcc, Vss | Power Supply | Single 2.7–3.6V supply; dual Vss pins improve noise immunity and ground return path integrity |
Key Features
| Feature | Design Value |
|---|---|
| No clock, no refresh | Eliminates system-level timing constraints and reduces firmware complexity for deterministic memory access |
| 2.0V data retention | Preserves stored configuration or sensor logs during brownout or battery-swapping events without external backup circuitry |
| OR-tie capable outputs | Enables direct connection of multiple SRAM outputs to shared data buses without external logic or buffers |
| Three-state outputs with OE# | Prevents bus contention during DMA transfers or multi-master arbitration, reducing risk of signal corruption |
| Easy memory expansion | CS1#/CS2, LB#/UB# and BYTE# support seamless bank switching and interleaved 8/16-bit memory mapping |
Applications
| Portable Medical Monitors | Industrial PLC Data Logging |
|---|---|
Use Scenario: Continuous acquisition of ECG waveforms and patient vitals in handheld diagnostic devices with intermittent power. IC Role / Device Role / Timing Role: Primary non-volatile buffer storing real-time sensor data during battery operation and retaining critical alarms during power loss. Use Value: 2µA standby current extends single-charge runtime; 2.0V retention ensures waveform integrity across battery swaps without supercapacitor backup. | Use Scenario: Local history storage in distributed I/O modules where network connectivity may be intermittent. IC Role / Device Role / Timing Role: High-reliability scratchpad memory for cyclic process variables, timestamps, and fault records accessible via microcontroller without DRAM controller overhead. Use Value: 55ns access time meets hard real-time scan cycle deadlines; TTL compatibility simplifies interface to legacy 8051-based controllers. |
| Avionics Maintenance Terminals | Smart Energy Metering Gateways |
Use Scenario: Field-deployable test equipment capturing flight control system diagnostics during ground checks. IC Role / Device Role / Timing Role: Fast-access memory for temporary storage of CAN bus message bursts and configuration snapshots prior to upload. Use Value: µTSOP-52 footprint minimizes board area in ruggedized enclosures; no-refresh operation avoids timing jitter in safety-critical logging paths. | Use Scenario: AMI gateway aggregating meter readings across HAN networks and buffering for cellular backhaul transmission. IC Role / Device Role / Timing Role: Intermediate buffer between low-power MCU and RF modem, handling bursty traffic while maintaining data coherency during sleep cycles. Use Value: Dual-byte enables (LB#/UB#) allow efficient 8-bit packet assembly; 3.6V max rating accommodates unregulated solar-charged battery rails. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 10 ns access time, 3.3V only, 48-pin TSOP-I - higher speed but wider voltage tolerance not required | Used in high-throughput data acquisition where 55ns latency is insufficient | Select when system clock domain demands sub-10ns read cycles and 3.3V rail stability is guaranteed |
| AS6C4008-55PCN | 55ns access, 2.7–3.6V, 44-pin SOJ - same timing but larger footprint and lower I/O drive strength | Fits legacy board designs with SOJ socket footprints and less stringent leakage requirements | Choose for drop-in replacement in existing SOJ-based industrial controllers where µTSOP rework is prohibitive |
Compared with IS61LV25616AL-10TLI and AS6C4008-55PCN, the R1LV1616RSD-5SI#B0 uniquely balances ultra-low standby current (2µA), µTSOP-52 miniaturization, and robust 2.0V data retention - making it optimal for battery-constrained edge nodes where size, power, and data persistence are jointly critical.
Availability
R1LV1616RSD-5SI#B0 is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data logging, avionics maintenance terminals, and smart energy metering gateways requiring stable component supply across extended product lifecycles.
Supply support for R1LV1616RSD-5SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.
The R1LV1616R Series was designed specifically for low-voltage, low-power memory applications where battery operation, data retention, and simple parallel interfacing are essential - targeting portable instrumentation, industrial control, and embedded telemetry systems.
FAQ
What is the maximum operating temperature range for the R1LV1616RSD-5SI#B0?
The R1LV1616RSD-5SI#B0 is rated for industrial temperature operation from −40°C to +85°C, as indicated by the "I" suffix in the part number. This allows reliable deployment in harsh environments such as factory floors, outdoor metering enclosures, and vehicle-mounted diagnostic tools where ambient temperatures exceed commercial-grade limits.
Does the R1LV1616RSD-5SI#B0 support byte-wide (x8) memory access?
Yes, the R1LV1616RSD-5SI#B0 supports x8 operation using the BYTE# pin, which is implemented on µTSOP and TSOP packages. When BYTE# = L, the device operates in 2M × 8-bit mode with DQ0–DQ7 as active data lines and DQ15 repurposed as address bit A−1 - enabling flexible memory mapping without external demultiplexing logic.
How does the R1LV1616RSD-5SI#B0 achieve data retention at 2.0V?
The R1LV1616RSD-5SI#B0 enters data retention mode when either LB# and UB# are held high, CS1# is held high with CS2 in valid state, or CS2 is driven to near-ground - all while Vcc remains ≥2.0V. In this state, internal circuitry powers down non-essential blocks, reducing current to ≤40 µA at +85°C while preserving stored bits in the SRAM array.
Can the R1LV1616RSD-5SI#B0 be used with a 3.3V-only microcontroller without level shifting?
Yes, the R1LV1616RSD-5SI#B0 has TTL-compatible inputs (VIH = 2.4V min, VIL = 0.4V max) and outputs (VOH = 2.4V min, VOL = 0.4V max at IOL = 2mA), ensuring direct interoperability with 3.3V microcontrollers such as ARM Cortex-M series or Renesas RX devices - no level-shifting circuitry is required for signal integrity.
What is the significance of the "-5S" suffix in R1LV1616RSD-5SI#B0?
The "-5S" suffix denotes a 55 ns maximum access time grade under specified operating conditions (Vcc = 2.7–3.6V, Ta = −40°C to +85°C). This timing applies to address-to-data valid (tAA), chip select access (tACS1/tACS2), and read cycle (tRC) parameters - confirming deterministic performance for hard real-time embedded applications.
R1LV1616RSD-5SI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 52-TFSOP (0.350", 8.89mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 16Mbit
- Memory Organization:
- 2M x 8, 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 52-TSOP II
R1LV1616RSD-5SI#B0 FAQ
1.How can I place an order for R1LV1616RSD-5SI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV1616RSD-5SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV1616RSD-5SI#B0 reliable?
The price and inventory of R1LV1616RSD-5SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV1616RSD-5SI#B0 is usually 5 days.
3.What payment methods are accepted for R1LV1616RSD-5SI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV1616RSD-5SI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV1616RSD-5SI#B0?
R1LV1616RSD-5SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV1616RSD-5SI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV1616RSD-5SI#B0?
For technical support, including R1LV1616RSD-5SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV1616RSD-5SI#B0 requirements.
6.How does Aetrix verify that R1LV1616RSD-5SI#B0 is sourced from the original manufacturer or authorized distributors?
All R1LV1616RSD-5SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV1616RSD-5SI#B0 meets industry standards.
7.What is the process for return or replacement of R1LV1616RSD-5SI#B0?
All R1LV1616RSD-5SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV1616RSD-5SI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV1616RSD-5SI#B0 part is unused and in its original packaging.
Return procedure for R1LV1616RSD-5SI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV1616RSD-5SI#B0 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
