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Renesas R1LV1616RSD-5SI#S0
- Part No.:
- R1LV1616RSD-5SI#S0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 52-TFSOP (0.350", 8.89mm Width)
- Datasheet:
-
R1LV1616RSD-5SI#S0.pdf
- Description:
- IC SRAM 16MBIT PAR 52TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:1,970
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Product details
Overview
R1LV1616RSD-5SI#S0 from Renesas Electronics is a 16Mb low-power static RAM organized as 1M × 16-bit or 2M × 8-bit, fabricated in 0.15µm CMOS, operating from 2.7–3.6V with 55ns access time and 2µA standby current at 3.0V, used in battery-backed memory subsystems for portable instrumentation and industrial controllers.
For engineers reviewing the R1LV1616RSD-5SI#S0 datasheet, R1LV1616RSD-5SI#S0 pinout, R1LV1616RSD-5SI#S0 application, or R1LV1616RSD-5SI#S0 equivalent, this page delivers verified electrical specs, µTSOP-52 pin mapping, byte-select timing behavior, data retention voltage (2.0V), and direct alternatives for SRAM replacement in space-constrained, low-quiescent-power designs.
Technical Context
The R1LV1616RSD-5SI#S0 implements a fully asynchronous, no-refresh static RAM architecture with dual chip select (CS1#, CS2), independent upper/lower byte enables (UB#, LB#), and TTL-compatible I/O. Its memory array supports both x16 and x8 operation modes via BYTE# control, enabling flexible bus-width expansion without external logic.
It features three-state outputs with OR-tie capability, OE#-controlled bus contention prevention, and data retention mode activated by LB#/UB# ≥ Vcc−0.2V or CS1# high/CS2 low - all validated for −40°C to +85°C industrial temperature operation with 2.0V minimum retention supply.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16 Mbit (1,048,576 × 16 or 2,097,152 × 8) |
| Access Time | 55 ns - guarantees valid read data within 55 ns of address/CS1#/OE# assertion under 2.7–3.6V, Ta ≤ +85°C |
| Supply Voltage | 2.7–3.6 V - supports single-supply battery systems (e.g., 3V coin cell backup) without level shifting |
| Standby Current | 2 µA typ. at 3.0V - enables multi-year battery life in always-on monitoring nodes |
| Data Retention Voltage | 2.0 V min - maintains stored data during brown-out or main power loss down to 2.0V Vcc |
| Operating Temperature | −40°C to +85°C - qualified for industrial-grade embedded control and automotive body electronics |
| Input Compatibility | TTL - interfaces directly with legacy microcontrollers and FPGAs without bus buffers |
Pinout & Package
Package: 52-pin µTSOP (II), 10.79 mm × 10.49 mm, 0.4 mm pitch, normal-bend leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1M-word addressing in x16 mode; A−1 is DQ15 in x8 mode |
| DQ0–DQ15 | Bi-directional Data I/O | Common data bus for read/write; high-impedance when OE# high or CS inactive |
| CS1#, CS2 | Chip Select Inputs | CS1# active-low + CS2 high enables device; CS2 also controls address/data buffers in retention mode |
| WE#, OE#, LB#, UB#, BYTE# | Control Inputs | WE# initiates write; OE# gates output drivers; LB#/UB# select byte lanes; BYTE# configures x8/x16 mode (TSOP/µTSOP only) |
| Vcc, Vss | Power Supply | Single 2.7–3.6V supply; Vss is ground reference for all signals and I/O |
| NC | No Connect | Pin 47 (µTSOP) is unconnected - must be left floating or tied to Vss per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates DRAM controller complexity and periodic refresh overhead in MCU-based systems |
| 2 µA standby current | Enables >10-year battery life in metering devices powered by CR2032 cells during sleep |
| 2.0V data retention | Maintains memory contents during 3.3V rail collapse to 2.0V, critical for fail-safe logging |
| Byte-select architecture | Allows independent 8-bit writes to upper/lower halves using LB#/UB#, reducing bus traffic vs full-word writes |
| OR-tie capable outputs | Permits multiple R1LV1616RSD-5SI#S0 devices to share a common data bus without external logic |
Applications
| Portable Medical Monitor | Industrial PLC I/O Module |
|---|---|
Use Scenario: Real-time waveform capture and event logging in handheld ECG units with lithium coin-cell backup. IC Role / Device Role / Timing Role: Primary non-volatile buffer storing 30 seconds of sampled analog data before transmission. Use Value: 2µA standby current extends battery life to >3 years; 2.0V retention preserves last-recorded arrhythmia trace during power loss. | Use Scenario: Local data buffering in DIN-rail mounted programmable logic controllers handling sensor inputs and actuator commands. IC Role / Device Role / Timing Role: High-speed scratchpad memory for cyclic process data exchange between CPU and fieldbus interface ASICs. Use Value: 55ns access time meets tight scan-cycle deadlines; TTL compatibility eliminates level-shifter BOM cost. |
| Smart Energy Meter | Avionics Cabin Control Unit |
Use Scenario: Tamper-resistant energy accumulation storage in ANSI C12.22-compliant meters with supercapacitor backup. IC Role / Device Role / Timing Role: Secure SRAM holding billing registers and cryptographic keys during mains outage. Use Value: Industrial temp range (−40°C to +85°C) ensures reliability in outdoor meter enclosures; no-refresh operation prevents data corruption during voltage sags. | Use Scenario: Configuration and status caching in line-replaceable cabin management units on regional aircraft. IC Role / Device Role / Timing Role: Fast-access memory for lighting, HVAC, and passenger service panel state tables. Use Value: µTSOP-52 footprint minimizes PCB area in constrained avionics chassis; 0.4mm pitch supports high-density routing near RF sections. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV1616AL-10TI | 10 ns slower access (65 ns), 3.3V only, 48-pin TSOP-I package | Lacks BYTE# pin and µTSOP-52 footprint; requires board redesign for pinout and thermal profile | Choose if system timing budget allows 65 ns and existing TSOP-I layout reuse is prioritized over size/power |
| AS6C1616-55PCN | Same 55 ns speed, but 2.5–3.6V range and 50 µA standby current at 3.0V | Higher leakage invalidates long-term battery backup use; not rated for −40°C operation | Acceptable only for commercial-temp, AC-powered applications where standby current is non-critical |
Compared with IS61LV1616AL-10TI and AS6C1616-55PCN, the R1LV1616RSD-5SI#S0 uniquely combines 55 ns speed, 2 µA standby, −40°C to +85°C rating, and µTSOP-52 packaging - making it irreplaceable for compact, battery-backed industrial edge nodes requiring guaranteed data integrity across voltage and temperature extremes.
Availability
R1LV1616RSD-5SI#S0 is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC I/O modules, smart energy meters, and avionics cabin control units requiring stable component supply across extended product lifecycles.
Supply support for R1LV1616RSD-5SI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV1616R Series was designed specifically for low-voltage, low-power memory applications demanding battery backup, simple interfacing, and high reliability - targeting portable instrumentation, industrial control, and telecom infrastructure.
FAQ
What is the maximum operating temperature range for the R1LV1616RSD-5SI#S0?
The R1LV1616RSD-5SI#S0 is rated for industrial temperature operation from −40°C to +85°C, as confirmed by its "I" suffix in the ordering code and validated in the Absolute Maximum Ratings table (page 5) and Operating Conditions table (page 6) of the REJ03C0101-0400Z datasheet. This makes the R1LV1616RSD-5SI#S0 suitable for deployment in harsh environments such as factory floors and outdoor utility meters without thermal derating.
Does the R1LV1616RSD-5SI#S0 support x8 and x16 data bus configurations?
Yes, the R1LV1616RSD-5SI#S0 supports both configurations: 1M × 16-bit (x16) and 2M × 8-bit (x8). The BYTE# pin selects the mode - asserted low for x8 operation, high or floating for x16. As noted on page 4 and page 10 of the datasheet, BYTE# is supported only on TSOP and µTSOP packages like the R1LV1616RSD-5SI#S0, enabling flexible bus-width adaptation without hardware changes.
What is the minimum supply voltage required to retain data in the R1LV1616RSD-5SI#S0?
The R1LV1616RSD-5SI#S0 maintains stored data down to 2.0V Vcc, as specified in the Data Retention Characteristics table (page 15) and referenced in the Features list (page 1). This 2.0V retention threshold allows the R1LV1616RSD-5SI#S0 to preserve critical logs or configuration during brown-out events in battery-powered systems before backup capacitors fully discharge.
Can the R1LV1616RSD-5SI#S0 be used with a 3.3V microcontroller without level shifters?
Yes, the R1LV1616RSD-5SI#S0 has TTL-compatible inputs and outputs, with VIH = 2.4V min and VIL = 0.4V max at Vcc = 3.0V (page 6), ensuring reliable interfacing to standard 3.3V MCUs. Its VOH ≥ 2.4V and VOL ≤ 0.4V under load (page 6) confirm direct connection feasibility - no level shifters needed for the R1LV1616RSD-5SI#S0 in typical 3.3V embedded designs.
How does the standby current of the R1LV1616RSD-5SI#S0 compare to similar 16Mb SRAMs?
The R1LV1616RSD-5SI#S0 draws just 2 µA typical standby current at 3.0V and 25°C (page 6), significantly lower than industry-standard alternatives like the AS6C1616 (50 µA) or CY62167 (15 µA). This ultra-low 2 µA draw is achieved through Renesas's 0.15µm CMOS process and optimized bias circuitry - a key differentiator for the R1LV1616RSD-5SI#S0 in battery-critical applications such as portable diagnostics and remote sensors.
R1LV1616RSD-5SI#S0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 52-TFSOP (0.350", 8.89mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 16Mbit
- Memory Organization:
- 2M x 8, 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 52-TSOP II
R1LV1616RSD-5SI#S0 FAQ
1.How can I place an order for R1LV1616RSD-5SI#S0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV1616RSD-5SI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV1616RSD-5SI#S0 reliable?
The price and inventory of R1LV1616RSD-5SI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV1616RSD-5SI#S0 is usually 5 days.
3.What payment methods are accepted for R1LV1616RSD-5SI#S0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV1616RSD-5SI#S0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV1616RSD-5SI#S0?
R1LV1616RSD-5SI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV1616RSD-5SI#S0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV1616RSD-5SI#S0?
For technical support, including R1LV1616RSD-5SI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV1616RSD-5SI#S0 requirements.
6.How does Aetrix verify that R1LV1616RSD-5SI#S0 is sourced from the original manufacturer or authorized distributors?
All R1LV1616RSD-5SI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV1616RSD-5SI#S0 meets industry standards.
7.What is the process for return or replacement of R1LV1616RSD-5SI#S0?
All R1LV1616RSD-5SI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV1616RSD-5SI#S0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV1616RSD-5SI#S0 part is unused and in its original packaging.
Return procedure for R1LV1616RSD-5SI#S0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV1616RSD-5SI#S0 Tags
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