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Renesas R1LV1616RSD-7UR#B0
- Part No.:
- R1LV1616RSD-7UR#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- -
- Datasheet:
-
R1LV1616RSD-7UR#B0.pdf
- Description:
- STANDARD SRAM, 1MX16, 70NS
- Quantity:
- Payment:
- Shipping:
Inventory:4,087
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Product details
Overview
R1LV1616RSD-7UR#B0 from Renesas Electronics is a 16-Mbit CMOS static RAM organized as 1-Mword × 16-bit or 2-Mword × 8-bit, operating from a single 3.0 V supply (2.7–3.6 V), with 55 ns max access time and −40°C to +85°C industrial temperature range. It supports battery backup via dual chip select (CS1#, CS2) and byte-select functionality (UB#, LB#, BYTE#) for embedded control and data logging systems.
For engineers reviewing the R1LV1616RSD-7UR#B0 datasheet, R1LV1616RSD-7UR#B0 pinout, R1LV1616RSD-7UR#B0 application, or R1LV1616RSD-7UR#B0 equivalent, this device delivers low-power standby operation (1.5 µW typ), three-state I/O, and full static operation without clocks-critical for power-sensitive instrumentation and industrial microcontroller peripherals.
Technical Context
The R1LV1616RSD-7UR#B0 implements a fully static 6-transistor memory cell architecture enabling zero-refresh operation and deterministic timing across its entire voltage and temperature range. Its dual-mode addressing (A0–A19 in word mode; A−1–A19 in byte mode) and independent upper/lower byte enable (UB#, LB#) support flexible data bus interfacing with 8-bit or 16-bit microcontrollers.
It features three distinct standby entry paths-via CS2 low, CS1# high with CS2 high, or simultaneous UB#/LB# high-each yielding sub-µA retention current (0.5 µA typ at VCC = 3.0 V). The device uses a 48-pin plastic TSOPI package with 0.5 mm pitch and surface-mount footprint optimized for high-density PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory capacity | 16 Mbit (1,048,576 × 16 or 2,097,152 × 8) |
| Supply voltage | 2.7 V to 3.6 V - enables direct interface with 3.3 V logic without level shifters |
| Access time | 55 ns max - guarantees timing margin for 12 MHz bus interfaces |
| Standby current | 0.5 µA typ - supports multi-year battery backup in non-volatile data logging |
| Operating temperature | −40°C to +85°C - qualified for industrial control and automotive under-hood auxiliary modules |
| I/O interface | Common bidirectional data bus (I/O0–I/O15) with three-state output - simplifies PCB routing and reduces external buffer count |
| Byte control | Separate UB#, LB#, and BYTE# inputs - enables selective 8-bit writes without read-modify-write cycles |
Pinout & Package
Package: 48-pin plastic TSOPI (48P3R-B), 12.0 mm × 20.0 mm × 1.2 mm body, 0.5 mm lead pitch, surface-mount compatible.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address input (word mode) | 20-bit address bus for 1-Mword × 16-bit configuration |
| A−1–A19 | Address input (byte mode) | 21-bit address bus enabling 2-Mword × 8-bit mapping |
| I/O0–I/O15 | Data input/output | Bidirectional 16-bit data path with three-state control via OE# |
| CS1#, CS2 | Chip select inputs | Dual CS enables battery backup mode: CS2 low or CS1# high + CS2 high triggers ultra-low-ISB |
| WE#, OE#, LB#, UB#, BYTE# | Control inputs | Independent write enable, output enable, and byte-select logic for precise 8/16-bit access control |
| VCC, VSS | Power and ground | Single 3.0 V supply rail; no separate I/O or core voltage required |
Key Features
| Feature | Design Value |
|---|---|
| Fully static operation | No clock, refresh, or timing strobe needed - eliminates system-level timing constraints and reduces MCU firmware overhead |
| Dual-mode organization | Hardware-selectable 1-Mword × 16-bit or 2-Mword × 8-bit via BYTE# pin - adapts to host processor bus width without redesign |
| Ultra-low standby power | 0.5 µA typical current in data retention mode - extends coin-cell life beyond 10 years in always-on monitoring nodes |
| Three standby entry methods | CS2 low, CS1# high + CS2 high, or UB#/LB# high - provides flexibility for power sequencing in complex multi-rail systems |
| Industrial temperature grade | −40°C to +85°C operation - validated for use in programmable logic controllers and motor drive control boards |
Applications
| Industrial Data Logger | Medical Diagnostic Monitor |
|---|---|
Use Scenario: Continuous acquisition of sensor data (ECG, SpO₂, temperature) with periodic flash storage and real-time display buffering. IC Role / Device Role / Timing Role: High-reliability, low-power SRAM acting as volatile frame buffer and intermediate FIFO between ADC and display controller. Use Value: 55 ns access time ensures seamless 60 Hz display updates; 0.5 µA standby current preserves battery charge during sleep intervals between measurements. |
Use Scenario: Real-time waveform capture and overlay rendering in portable ultrasound or ECG units with limited battery capacity. IC Role / Device Role / Timing Role: Dual-port-capable SRAM used for ping-pong buffering of digitized RF or analog front-end samples. Use Value: Byte-select (UB#/LB#) allows partial buffer updates without full-word writes; −40°C to +85°C rating supports clinical use in uncontrolled ambient environments. |
| Programmable Logic Controller (PLC) | Automotive Body Control Module |
Use Scenario: Storing I/O state tables, ladder logic variables, and communication protocol buffers in DIN-rail mounted industrial controllers. IC Role / Device Role / Timing Role: Non-refreshing SRAM serving as deterministic working memory for deterministic scan-cycle execution. Use Value: Fully static behavior guarantees zero timing jitter; dual CS inputs allow hardware-controlled power gating during safe shutdown sequences. |
Use Scenario: Retaining door lock status, window position, mirror settings, and fault codes during vehicle ignition-off periods. IC Role / Device Role / Timing Role: Battery-backed SRAM maintaining critical configuration data when main 12 V supply is disconnected. Use Value: Sub-µA retention current enables >5-year data hold on a single CR2032; VDR down to 1.5 V ensures reliable operation during brown-out conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV1616AL-10TLI | 10 ns faster access (45 ns max), same 48-pin TSOPI package, identical 16-Mbit × 16/×8 organization | Higher-speed requirement in real-time DSP co-processing; not rated for extended temperature range | Select when system clock exceeds 12 MHz and ambient temperature stays within 0°C to +70°C |
| AS6C1616-55PCN | Same 55 ns access, but only −20°C to +70°C temp range; lower standby current (0.2 µA typ) and smaller 44-pin TSOP package | Consumer-grade portable electronics where cost and board space outweigh industrial reliability needs | Choose for cost-sensitive consumer designs with relaxed thermal and longevity requirements |
Compared with IS61LV1616AL-10TLI, R1LV1616RSD-7UR#B0 trades 10 ns speed for guaranteed −40°C operation and robust battery-backup control; versus AS6C1616-55PCN, it adds industrial temperature qualification and dual-CS retention at modest cost premium.
Availability
R1LV1616RSD-7UR#B0 is available at Aetrix Electronics and suitable for industrial data loggers, medical diagnostic monitors, programmable logic controllers, automotive body control modules, and battery-backed instrumentation requiring stable component supply across extended temperature ranges.
Supply support for R1LV1616RSD-7UR#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV1616H-I Series was designed specifically for high-reliability, low-power static RAM applications in harsh-environment embedded systems-emphasizing extended temperature operation, battery backup integrity, and pin-compatible scalability across density grades.
FAQ
What is the maximum access time specification for R1LV1616RSD-7UR#B0?
The R1LV1616RSD-7UR#B0 has a maximum access time of 55 ns under industrial temperature (−40°C to +85°C) and supply voltage (2.7 V to 3.6 V) conditions. This value is measured as tAA (address access time) and applies to both word and byte modes. The device also meets 55 ns max for tACS1, tACS2, and tBA, ensuring consistent timing across all control signal combinations.
Does R1LV1616RSD-7UR#B0 support true 8-bit data bus operation?
Yes, R1LV1616RSD-7UR#B0 supports native 8-bit operation via BYTE# pin assertion, which shifts the address LSB from A0 (in 16-bit word mode) to A−1 (in 8-bit byte mode), enabling 2-Mword × 8-bit organization. Combined with independent LB# and UB# controls, it allows true byte-wide reads/writes without read-modify-write overhead.
How does R1LV1616RSD-7UR#B0 enter ultra-low-power data retention mode?
R1LV1616RSD-7UR#B0 enters data retention mode through any of three hardware-configured paths: (1) CS2 ≤ 0.2 V, (2) CS1# ≥ VCC − 0.2 V with CS2 ≥ VCC − 0.2 V, or (3) LB# = UB# ≥ VCC − 0.2 V with CS2 ≥ VCC − 0.2 V and CS1# ≤ 0.2 V. All paths reduce ICCDR to 0.5 µA typ while preserving data at VCC as low as 1.5 V.
What is the pin compatibility status of R1LV1616RSD-7UR#B0 with other devices in the R1LV1616H-I Series?
R1LV1616RSD-7UR#B0 is pin-compatible with all members of the R1LV1616H-I Series, including R1LV1616HSA-4LI, R1LV1616HSA-4SI, and R1LV1616HSA-5SI. All share identical 48-pin TSOPI (48P3R-B) pinout, address/data/control signal assignments, and DC/AC electrical characteristics-differing only in access time grade and ordering suffix.
Can R1LV1616RSD-7UR#B0 operate reliably at 2.7 V supply voltage?
Yes, R1LV1616RSD-7UR#B0 is fully specified and tested at 2.7 V minimum supply voltage. Its AC timing parameters-including 55 ns max access time-and DC characteristics (e.g., VIH = 2.2 V min, VOL = 0.4 V max) remain valid across the full 2.7–3.6 V range, making it suitable for systems powered by aging or discharged Li-ion batteries.
R1LV1616RSD-7UR#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
R1LV1616RSD-7UR#B0 FAQ
1.How can I place an order for R1LV1616RSD-7UR#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV1616RSD-7UR#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV1616RSD-7UR#B0 reliable?
The price and inventory of R1LV1616RSD-7UR#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV1616RSD-7UR#B0 is usually 5 days.
3.What payment methods are accepted for R1LV1616RSD-7UR#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV1616RSD-7UR#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV1616RSD-7UR#B0?
R1LV1616RSD-7UR#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV1616RSD-7UR#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV1616RSD-7UR#B0?
For technical support, including R1LV1616RSD-7UR#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV1616RSD-7UR#B0 requirements.
6.How does Aetrix verify that R1LV1616RSD-7UR#B0 is sourced from the original manufacturer or authorized distributors?
All R1LV1616RSD-7UR#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV1616RSD-7UR#B0 meets industry standards.
7.What is the process for return or replacement of R1LV1616RSD-7UR#B0?
All R1LV1616RSD-7UR#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV1616RSD-7UR#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV1616RSD-7UR#B0 part is unused and in its original packaging.
Return procedure for R1LV1616RSD-7UR#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV1616RSD-7UR#B0 Tags
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