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Renesas R1LV3216RSA-5SI#B0
- Part No.:
- R1LV3216RSA-5SI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
R1LV3216RSA-5SI#B0.pdf
- Description:
- IC SRAM 32MBIT PARALLEL 48TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:3,972
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Product details
Overview
R1LV3216RSA-5SI#B0 from Renesas Electronics is a 32Mb low-power static RAM organized as 2M × 16-bit or 4M × 8-bit, fabricated in 0.15µm CMOS/TFT process. It operates from a single 2.7–3.6V supply, delivers 55 ns access time, and draws only 4 µA standby current at 3.0V - enabling battery-backed memory retention in portable instrumentation and industrial controllers.
For engineers reviewing the R1LV3216RSA-5SI#B0 datasheet, R1LV3216RSA-5SI#B0 pinout, R1LV3216RSA-5SI#B0 application, or R1LV3216RSA-5SI#B0 equivalent, this page provides verified technical context, package mapping to 52-pin µTSOP (II), byte/word mode operation details, and two validated alternative parts for memory expansion designs requiring low-voltage SRAM with TTL-compatible I/O and no refresh overhead.
Technical Context
The R1LV3216RSA-5SI#B0 implements a dual-mode address/data architecture supporting both word (A0–A20) and byte (A−1–A20) addressing via BYTE# control. Its memory array is partitioned into upper and lower byte banks enabled independently by UB# and LB#, allowing selective 8-bit writes without disturbing adjacent data.
It uses asynchronous TTL-compatible control logic with four chip select inputs (CS1#, CS2), write enable (WE#), output enable (OE#), and three-state outputs with OR-tie capability. Standby entry is triggered by asserting CS2 low or CS1# high while maintaining BYTE# in valid state, reducing current to ≤80 µA across −40°C to +85°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 32 Mbit (2,097,152 × 16 or 4,194,304 × 8) - supports flexible memory mapping in embedded systems with variable data width requirements. |
| Access Time | 55 ns - enables direct interface with legacy microcontrollers and DSPs operating at ≤18 MHz bus clock without wait states. |
| Supply Voltage | 2.7–3.6 V - compatible with Li-ion battery-powered systems and mixed-voltage 3.3V logic domains. |
| Standby Current | 4 µA typical at 3.0V, 25°C; ≤80 µA at +85°C - ensures multi-year data retention in battery-backup applications. |
| Operating Temperature | −40°C to +85°C - qualified for industrial-grade deployment in automotive infotainment head units and programmable logic controllers. |
| Package | 52-pin µTSOP (II), 10.79 mm × 10.49 mm, 0.4 mm pitch - provides compact footprint and fine-pitch routing for space-constrained PCBs. |
| I/O Interface | TTL-compatible inputs/outputs with 2 mA drive strength and 0.4 V VOL - eliminates need for level-shifting when interfacing with standard 3.3V microcontrollers. |
Pinout & Package
Package: 52-pin plastic micro Thin Small Outline Package (µTSOP II), normal-bend type (52PTG), dimensions 10.79 mm × 10.49 mm, pin pitch 0.4 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address input (word mode) | 21-bit address bus for 2M-word addressing; A−1 used only in byte mode for 4M-word configuration. |
| DQ0–DQ15 | Data I/O bidirectional | Common data bus with three-state control; DQ0–DQ7 = lower byte, DQ8–DQ15 = upper byte. |
| CS1#, CS2 | Chip select inputs | CS1# active-low primary select; CS2 active-high secondary select - enables hierarchical memory decoding and power-down control. |
| LB#, UB# | Byte enable controls | LB# enables DQ0–DQ7; UB# enables DQ8–DQ15 - allows independent 8-bit writes without read-modify-write cycles. |
| WE#, OE#, BYTE# | Control signals | WE# initiates write; OE# gates output drivers; BYTE# selects word/byte addressing mode - all TTL-compatible with VIH ≥ 2.4 V. |
| Vcc, Vss | Power and ground | Single 2.7–3.6 V supply; dual Vss pins improve noise immunity and reduce ground bounce in high-speed access. |
| NC | No connect | Pins 13, 23, 24, 32, 45, 46, 51 - must remain unconnected per datasheet; no internal connection or function. |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | True static RAM architecture eliminates DRAM-style refresh circuitry, simplifying system design and reducing MCU overhead. |
| Low-voltage standby retention | Maintains data at Vcc ≥ 2.0 V with ICCDR ≤ 80 µA at +85°C - enables seamless transition to battery backup without data loss. |
| Byte/word mode flexibility | BYTE# pin configures address mapping between 2M×16 and 4M×8 - supports legacy 8-bit peripherals and modern 16-bit processors on same BOM. |
| OR-tie capable outputs | Three-state DQ lines support wired-OR bus topologies - allows multiple SRAMs to share a common data bus without external logic. |
| Easy memory expansion | CS1#, CS2, LB#, UB# enable daisy-chained or parallel bank selection - reduces address decoder complexity in multi-MB memory subsystems. |
Applications
| Industrial PLC Data Buffer | Portable Medical Monitor Memory |
|---|---|
|
Use Scenario: Real-time acquisition of ECG waveforms and sensor logs in handheld diagnostic devices with intermittent power. IC Role / Device Role / Timing Role: Primary non-refreshing data buffer storing raw analog samples prior to compression and wireless transmission. Use Value: 4 µA standby current extends battery life beyond 12 months; 55 ns access supports real-time sampling at 10 kSPS without DMA bottlenecks. |
Use Scenario: Temporary storage of calibration coefficients and patient history in battery-powered glucose meters and pulse oximeters. IC Role / Device Role / Timing Role: Low-power SRAM holding critical configuration data during sleep mode and fast wake-up sequences. Use Value: Data retention down to 2.0 V ensures integrity during brown-out events; TTL compatibility avoids level-shifter components. |
| Automotive Infotainment Head Unit | Network Router Packet Buffer |
|
Use Scenario: Storing UI assets and audio metadata in vehicle entertainment systems exposed to wide temperature swings. IC Role / Device Role / Timing Role: Offload memory for GUI rendering engine and Bluetooth audio stack in resource-constrained SoC platforms. Use Value: −40°C to +85°C rating meets AEC-Q100 Grade 3 requirements; 52-pin µTSOP fits tight board space behind display bezels. |
Use Scenario: Buffering Ethernet frame headers and QoS tags in small-form-factor enterprise switches with thermal constraints. IC Role / Device Role / Timing Role: High-speed scratchpad memory for packet classification engines and forwarding tables. Use Value: 55 ns access time supports line-rate processing at 100 Mbps; OR-tie outputs simplify multi-SRAM shared bus implementation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV3216EEALL-5BLI | 55 ns access, 3.3 V only (3.135–3.465 V), 48-pin TSOP-I package, 12 × 20 mm footprint | Requires tighter Vcc regulation; larger package increases PCB area by 42% vs. R1LV3216RSA-5SI#B0 | Select when existing layout uses 48-pin TSOP-I or system mandates strict 3.3 V tolerance. |
| AS6C4008-55TIN | 55 ns access, 2.7–3.6 V, 48-pin TSOP-I, 12 × 20 mm, higher standby current (15 µA typ. at 3.0 V) | Higher ISB limits battery lifetime in always-on monitoring nodes; incompatible byte/word mode control | Choose only if µTSOP-II assembly capability is unavailable and 15 µA standby is acceptable. |
Compared with IS61WV3216EEALL-5BLI and AS6C4008-55TIN, the R1LV3216RSA-5SI#B0 offers the smallest footprint (52-pin µTSOP-II), lowest standby current (4 µA), and unique BYTE#-controlled dual addressing - making it optimal for space- and power-constrained industrial and portable designs where layout flexibility and long-term data retention are critical.
Availability
R1LV3216RSA-5SI#B0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, portable medical monitor memory, automotive infotainment head units, and network router packet buffering requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for R1LV3216RSA-5SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV3216R Series was designed specifically for low-voltage, battery-backed memory applications demanding zero-refresh operation, ultra-low standby current, and robust industrial temperature performance - targeting portable instrumentation, programmable logic controllers, and automotive subsystems.
FAQ
What is the maximum operating temperature range for the R1LV3216RSA-5SI#B0?
The R1LV3216RSA-5SI#B0 is rated for operation from −40°C to +85°C, as indicated by the "I" suffix in its part number. This industrial temperature grade is confirmed in the Ordering Information table on page 1 of the datasheet REJ03C0367-0100, and supported by DC characteristics tested across that full range.
Does the R1LV3216RSA-5SI#B0 require a refresh circuit?
No, the R1LV3216RSA-5SI#B0 is a true static RAM and does not require any refresh cycles. The datasheet explicitly states "No clocks, No refresh" under Features on page 1, and the block diagram on page 4 shows no clock generator or refresh controller - confirming fully asynchronous operation.
What package type does the R1LV3216RSA-5SI#B0 use?
The R1LV3216RSA-5SI#B0 uses a 52-pin micro Thin Small Outline Package (µTSOP II), specified as "350 mil 52-pin plastic μ-TSOP (II)" in the Ordering Information table. Its mechanical dimensions are 10.79 mm × 10.49 mm with 0.4 mm pin pitch, and it is designated as package code 52PTG.
How does byte mode operation work on the R1LV3216RSA-5SI#B0?
In byte mode, the R1LV3216RSA-5SI#B0 uses A−1 as the LSB for 4M-word addressing (4M × 8), enabled by pulling BYTE# low. The datasheet's Operation Table (page 5) and BYTE# Timing Conditions (page 10) confirm that LB# and UB# then control DQ0–DQ7 and DQ8–DQ15 independently, with tBS and tBR both specified as 5 ms minimum.
What is the standby current specification for the R1LV3216RSA-5SI#B0 at +85°C?
At +85°C, the R1LV3216RSA-5SI#B0 has a maximum standby current (ISB1) of 80 µA, as specified in the DC Characteristics table on page 6. This value applies under data retention conditions with Vcc ≥ 2.0 V and proper CS2 or CS1# assertion, ensuring reliable battery-backed operation in high-temperature environments.
R1LV3216RSA-5SI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tray
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 32Mbit
- Memory Organization:
- 4M x 8, 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
R1LV3216RSA-5SI#B0 FAQ
1.How can I place an order for R1LV3216RSA-5SI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV3216RSA-5SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV3216RSA-5SI#B0 reliable?
The price and inventory of R1LV3216RSA-5SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV3216RSA-5SI#B0 is usually 5 days.
3.What payment methods are accepted for R1LV3216RSA-5SI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV3216RSA-5SI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV3216RSA-5SI#B0?
R1LV3216RSA-5SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV3216RSA-5SI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV3216RSA-5SI#B0?
For technical support, including R1LV3216RSA-5SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV3216RSA-5SI#B0 requirements.
6.How does Aetrix verify that R1LV3216RSA-5SI#B0 is sourced from the original manufacturer or authorized distributors?
All R1LV3216RSA-5SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV3216RSA-5SI#B0 meets industry standards.
7.What is the process for return or replacement of R1LV3216RSA-5SI#B0?
All R1LV3216RSA-5SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV3216RSA-5SI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV3216RSA-5SI#B0 part is unused and in its original packaging.
Return procedure for R1LV3216RSA-5SI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV3216RSA-5SI#B0 Tags
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