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Renesas R1LV3216RSA-5SI#B1
- Part No.:
- R1LV3216RSA-5SI#B1
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
R1LV3216RSA-5SI#B1.pdf
- Description:
- IC SRAM 32MBIT PARALLEL 48TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:4,977
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Product details
Overview
R1LV3216RSA-5SI#B1 from Renesas Electronics is a 32Mb low-power static RAM organized as 2M × 16-bit or 4M × 8-bit, fabricated in 0.15µm CMOS/TFT process, operating from 2.7V to 3.6V with 55 ns access time and 4 µA typical standby current at 3.0V - deployed in battery-backed memory subsystems for portable instrumentation and industrial control.
For engineers reviewing the R1LV3216RSA-5SI#B1 datasheet, R1LV3216RSA-5SI#B1 pinout, R1LV3216RSA-5SI#B1 application, or R1LV3216RSA-5SI#B1 equivalent, this page delivers verified package mapping (52-pin µTSOP II), byte/word mode operation, TTL-compatible I/O, no-refresh architecture, and low-voltage data retention down to 2.0V - all confirmed from Renesas' official REJ03C0367-0100 Rev.1.00 datasheet.
Technical Context
The R1LV3216RSA-5SI#B1 implements a fully asynchronous SRAM architecture with dual chip select (CS1#, CS2), independent upper/lower byte enables (UB#, LB#), and BYTE#-controlled mode switching between word and byte addressing. Its memory array supports both 2M-word × 16-bit and 4M-word × 8-bit configurations via A–1 address pin multiplexing.
It features three-state TTL-compatible outputs with OR-tie capability, OE#-controlled bus contention prevention, and a dedicated Vcc/Vss pair per side for noise immunity. Standby current drops to 4 µA (typ) at 3.0V, and data retention remains valid at Vcc as low as 2.0V with ICCDR ≤ 80 µA at +85°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 32 Mbit (2,097,152 × 16 or 4,194,304 × 8) - enables compact high-capacity buffer storage without refresh circuitry. |
| Access Time | 55 ns (max) - guarantees deterministic read latency for real-time control loops and burst data capture. |
| Supply Voltage | 2.7–3.6 V - compatible with single-cell Li-ion and regulated 3.3V systems; supports low-voltage data retention to 2.0V. |
| Standby Current | 4 µA typical at 3.0V / 25°C - extends battery life in always-on backup memory applications. |
| Operating Temp | –40°C to +85°C (I-grade) - qualified for industrial edge nodes and automotive body electronics. |
| Package | 52-pin µTSOP (II), 10.79 mm × 10.49 mm, 0.4 mm pitch - surface-mount compatible with high-density PCB layouts. |
| I/O Interface | TTL-compatible inputs/outputs, no clocks, no refresh - simplifies interface logic and eliminates timing controller overhead. |
Pinout & Package
52-pin micro Thin Small Outline Package (µTSOP II), 10.79 mm × 10.49 mm, 0.4 mm lead pitch, normal-bend leads. Pin 1 marked by dot; pins numbered counterclockwise from top-left corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address input (word mode) | 21-bit address bus for 2M-word addressing; A–1 used only in byte mode. |
| A–1 | Address input (byte mode) | Enables 4M-word × 8-bit configuration when BYTE# = L; otherwise unused. |
| DQ0–DQ15 | Data I/O bidirectional | Common data bus; DQ0–DQ7 = lower byte, DQ8–DQ15 = upper byte; three-state controlled by OE#, LB#, UB#. |
| CS1#, CS2 | Chip select inputs | CS1# active-low primary enable; CS2 active-high secondary enable - supports hierarchical memory decoding. |
| WE#, OE#, LB#, UB# | Control inputs | WE# controls write strobe; OE# gates output drivers; LB#/UB# select byte lanes independently. |
| BYTE# | Mode selection | Low = byte mode (A–1 active); High = word mode - configures internal address decoder and data path. |
| Vcc, Vss | Power and ground | Dual Vcc/Vss pairs (pins 24/25 and 41/42) reduce simultaneous switching noise and improve signal integrity. |
| NC | No connect | Pins 13, 23, 30, 31, 44, 45, 46, 47, 49, 50 - electrically isolated; must not be connected. |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Asynchronous static RAM architecture eliminates DRAM-style refresh circuitry and timing constraints. |
| Byte/word mode flexibility | Single device supports both 16-bit and 8-bit data buses via BYTE# pin - reduces BOM count across platform variants. |
| Ultra-low standby power | 4 µA typical at 3.0V enables >1-year battery backup in metering and sensor logging applications. |
| TTL-compatible I/O | Direct interfacing with legacy microcontrollers and FPGAs without level-shifting or bus buffers. |
| OR-tie capable outputs | Three-state outputs allow multiple R1LV3216RSA-5SI#B1 devices to share a common data bus without external logic. |
Applications
| Portable Medical Data Logger | Industrial PLC Memory Buffer |
|---|---|
Use Scenario: Battery-powered ECG monitor stores waveform snapshots during intermittent transmission windows. IC Role / Device Role / Timing Role: Nonvolatile buffer holding up to 2M samples before wireless upload; retains data during sleep cycles. Use Value: 4 µA standby current extends coin-cell life beyond 18 months; 55 ns access enables real-time waveform capture at 10 kSPS. |
Use Scenario: Programmable logic controller caches I/O state changes and ladder logic variables between scan cycles. IC Role / Device Role / Timing Role: Fast-access scratchpad memory for deterministic cycle times; interfaces directly to 16-bit MCU bus. Use Value: TTL compatibility eliminates level shifters; 2.7–3.6V range matches industrial 3.3V rails; –40°C to +85°C rating ensures field reliability. |
| Automotive Body Control Module | Test Equipment FIFO Buffer |
Use Scenario: Door module stores fault codes, calibration offsets, and user preferences across ignition cycles. IC Role / Device Role / Timing Role: Battery-backed SRAM retaining critical configuration data during vehicle shutdown. Use Value: Data retention down to 2.0V allows operation during cranking transients; I-grade temp range covers under-hood environments. |
Use Scenario: Automated test system buffers high-speed analog digitizer output before host transfer. IC Role / Device Role / Timing Role: High-throughput temporary storage enabling gapless acquisition at 50 MSPS. Use Value: 55 ns access time supports sustained 18 MB/s read/write throughput; OR-tie outputs simplify multi-bank expansion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 256K × 16-bit (4Mb), 10 ns access, 3.3V only, 44-pin TSOP-II - smaller density, faster speed, narrower voltage range. | Suitable for space-constrained designs needing higher bandwidth but less capacity; not drop-in due to pinout and density mismatch. | Select when system requires sub-10ns latency and <4Mb capacity; verify CS/LB/UB timing alignment with controller. |
| AS6C4008-55PCN | 512K × 8-bit (4Mb), 55 ns access, 2.7–3.6V, 44-pin SOP - same speed grade but byte-only organization and larger package footprint. | Fits legacy 8-bit bus systems; lacks BYTE# mode switching and µTSOP II compactness of R1LV3216RSA-5SI#B1. | Choose for cost-sensitive 8-bit MCU platforms where board area is non-critical and byte-mode operation suffices. |
Compared with IS61LV25616AL-10TLI and AS6C4008-55PCN, the R1LV3216RSA-5SI#B1 uniquely delivers 32Mb density in a 52-pin µTSOP II at 55 ns with dual-mode (word/byte) flexibility and 2.0V data retention - making it optimal for next-generation portable and industrial systems requiring scalable, low-power memory with minimal footprint.
Availability
R1LV3216RSA-5SI#B1 is available at Aetrix Electronics and suitable for portable medical devices, industrial PLCs, automotive body controllers, and automated test equipment requiring stable component supply, long-lifecycle support, and guaranteed traceability.
Supply support for R1LV3216RSA-5SI#B1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV3216R Series was designed specifically for low-voltage, low-power memory applications demanding battery backup, simple interface, and high reliability - targeting portable instrumentation, industrial control, and automotive subsystems.
FAQ
What is the operating temperature range for the R1LV3216RSA-5SI#B1?
The R1LV3216RSA-5SI#B1 is rated for –40°C to +85°C (Industrial grade), as specified in the REJ03C0367-0100 datasheet. This range is validated across all electrical parameters including access time, standby current, and data retention - making the R1LV3216RSA-5SI#B1 suitable for under-hood automotive modules and factory-floor PLCs without derating.
Does the R1LV3216RSA-5SI#B1 require a clock or refresh signal?
No, the R1LV3216RSA-5SI#B1 is a true static RAM with no clock input and zero refresh requirement. Its operation is fully asynchronous - all reads and writes are controlled solely by CS1#, CS2, WE#, OE#, LB#, and UB# timing. This eliminates clock distribution complexity and power overhead associated with DRAM or pseudo-SRAM devices.
How does byte mode differ from word mode on the R1LV3216RSA-5SI#B1?
When BYTE# = L, the R1LV3216RSA-5SI#B1 operates in byte mode (4M × 8-bit), activating A–1 as an address bit and enabling independent LB#/UB# control over DQ0–7 and DQ8–15. When BYTE# = H, it operates in word mode (2M × 16-bit), using A0–A20 only. The R1LV3216RSA-5SI#B1's internal decoder and data paths reconfigure automatically - no external logic needed.
What is the minimum supply voltage for data retention on the R1LV3216RSA-5SI#B1?
The R1LV3216RSA-5SI#B1 maintains data integrity down to Vcc = 2.0V in standby, as confirmed in the Low Vcc Data Retention Characteristics table (Page 15). At this voltage, ICCDR remains ≤ 80 µA at +85°C, enabling reliable battery-backup operation during brownout conditions - a key design advantage over standard 3.3V SRAMs that fail below 2.7V.
Can multiple R1LV3216RSA-5SI#B1 devices share the same data bus?
Yes - the R1LV3216RSA-5SI#B1 features three-state outputs with OR-tie capability. When OE# is high or CS1# is inactive, all DQ pins enter high-impedance state. This allows multiple R1LV3216RSA-5SI#B1 units to be connected in parallel on a single 16-bit bus, with chip select decoding determining which device drives the lines - eliminating need for external bus transceivers.
R1LV3216RSA-5SI#B1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 32Mbit
- Memory Organization:
- 4M x 8, 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
R1LV3216RSA-5SI#B1 FAQ
1.How can I place an order for R1LV3216RSA-5SI#B1 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV3216RSA-5SI#B1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV3216RSA-5SI#B1 reliable?
The price and inventory of R1LV3216RSA-5SI#B1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV3216RSA-5SI#B1 is usually 5 days.
3.What payment methods are accepted for R1LV3216RSA-5SI#B1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV3216RSA-5SI#B1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV3216RSA-5SI#B1?
R1LV3216RSA-5SI#B1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV3216RSA-5SI#B1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV3216RSA-5SI#B1?
For technical support, including R1LV3216RSA-5SI#B1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV3216RSA-5SI#B1 requirements.
6.How does Aetrix verify that R1LV3216RSA-5SI#B1 is sourced from the original manufacturer or authorized distributors?
All R1LV3216RSA-5SI#B1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV3216RSA-5SI#B1 meets industry standards.
7.What is the process for return or replacement of R1LV3216RSA-5SI#B1?
All R1LV3216RSA-5SI#B1 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV3216RSA-5SI#B1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV3216RSA-5SI#B1 part is unused and in its original packaging.
Return procedure for R1LV3216RSA-5SI#B1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV3216RSA-5SI#B1 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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