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Renesas R1LV3216RSA-5SI#S0
- Part No.:
- R1LV3216RSA-5SI#S0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
R1LV3216RSA-5SI#S0.pdf
- Description:
- IC SRAM 32MBIT PARALLEL 48TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:4,145
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Product details
Overview
R1LV3216RSA-5SI#S0 from Renesas Electronics is a 32Mb low-power static RAM organized as 2M × 16-bit (or 4M × 8-bit in byte mode), fabricated on 0.15 µm CMOS/TFT process, operating from a single 2.7–3.6 V supply with 55 ns access time and −40 to +85 °C industrial temperature range. It serves as non-volatile-capable memory in battery-backed systems requiring zero-refresh operation and TTL-compatible interfacing.
For engineers reviewing the R1LV3216RSA-5SI#S0 datasheet, R1LV3216RSA-5SI#S0 pinout, R1LV3216RSA-5SI#S0 application, or R1LV3216RSA-5SI#S0 equivalent, this device is selected for low-quiescent-current embedded memory where data retention at 2.0 V, OR-tie bus capability, and flexible byte/word addressing are critical design requirements.
Technical Context
The R1LV3216RSA-5SI#S0 implements a fully static architecture with no internal clocks or refresh circuitry, relying on address latching via CS1#, CS2, LB#, UB#, and BYTE# control signals to select word, upper-byte, lower-byte, or byte-mode (A−1) addressing. Its dual chip-select architecture (CS1# active-low, CS2 active-high) enables hierarchical memory mapping and seamless expansion across multiple devices.
It supports three-state bidirectional I/O with OE#-controlled output enable, independent LB#/UB# write gating, and TTL-compatible input thresholds (VIH = 2.4 V min, VIL = 0.4 V max). Standby current is specified at 4 µA typical (3.0 V), dropping to ≤80 µA at +85 °C while retaining data down to VCC = 2.0 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 32 Mbit (2,097,152 × 16-bit or 4,194,304 × 8-bit); enables compact high-capacity SRAM in space-constrained designs |
| Access time | 55 ns (max); guarantees deterministic read latency for real-time control and communication buffers |
| Supply voltage | 2.7–3.6 V single rail; compatible with 3.3 V logic domains and battery-operated systems |
| Standby current | 4 µA typical at 3.0 V / 25 °C; reduces power budget in always-on backup modes |
| Data retention voltage | 2.0 V minimum; preserves stored contents during brown-out or battery-switchover events |
| Operating temperature | −40 to +85 °C (I-grade); qualified for industrial environments including factory automation and transportation electronics |
| Package | 52-pin µTSOP (II), 10.79 mm × 10.49 mm, 0.4 mm pitch; supports fine-pitch PCB routing and high-density layout |
Pinout & Package
Package: 52-pin micro Thin Small Outline Package (µTSOP II), 10.79 mm × 10.49 mm body, 0.4 mm lead pitch, normal-bend leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address inputs (word mode) | 21-bit address bus supporting 2M-word addressing; A−1 used only in byte mode |
| DQ0–DQ15 | Bidirectional data I/O | 16-bit common bus with three-state outputs; supports OR-tie for shared-bus architectures |
| CS1#, CS2 | Chip select controls | CS1# active-low + CS2 active-high enable hierarchical decoding and multi-chip memory banks |
| LB#, UB#, BYTE# | Byte/word mode selection | LB#/UB# gate lower/upper byte writes; BYTE# = L configures A−1-based 8-bit addressing |
| WE#, OE# | Write and output enable | WE# initiates write cycles; OE# prevents bus contention during read operations |
| Vcc, Vss | Power and ground | Single 2.7–3.6 V supply; decoupling required per JEDEC guidelines for noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| No clock, no refresh | Eliminates timing controller overhead and guarantees deterministic access without periodic maintenance cycles |
| 4 µA standby current (typ.) | Enables >1-year battery life in backup memory applications using standard coin cells |
| TTL-compatible I/O | Direct interface with legacy 3.3 V microcontrollers and FPGAs without level-shifting circuitry |
| OR-tie capable outputs | Allows multiple R1LV3216RSA-5SI#S0 devices to share a common data bus without external logic |
| 2.0 V data retention | Maintains valid memory contents during undervoltage conditions, supporting graceful system recovery |
Applications
| Industrial PLC Data Buffer | Medical Device Event Log Storage |
|---|---|
|
Use Scenario: Storing real-time sensor readings and alarm timestamps in programmable logic controllers deployed in factory-floor environments with wide ambient temperature swings. IC Role / Device Role / Timing Role: Non-refreshing SRAM buffer holding volatile operational history; accessed via parallel bus under microcontroller control with guaranteed 55 ns read latency. Use Value: Eliminates DRAM refresh overhead and ensures data integrity during brief AC mains interruptions due to 2.0 V retention capability. |
Use Scenario: Capturing diagnostic logs and therapy session metadata in portable ultrasound and infusion pump systems requiring regulatory-compliant data persistence. IC Role / Device Role / Timing Role: Battery-backed memory storing time-stamped safety-critical events; operates in byte mode for efficient small-record writes. Use Value: 4 µA typical standby current extends primary battery service life while −40 to +85 °C rating covers clinical and transport temperature ranges. |
| Automotive Infotainment Cache | Telecom Base Station Control Memory |
|
Use Scenario: Caching navigation map tiles and UI assets in automotive head units where EMI resilience and thermal stability are mandatory. IC Role / Device Role / Timing Role: High-speed parallel SRAM interfaced to application processor's memory controller; uses CS1#/CS2 for bank selection in multi-SRAM configurations. Use Value: 52-pin µTSOP package enables dense layout; TTL compatibility avoids signal integrity issues on long traces in noisy vehicle harnesses. |
Use Scenario: Holding configuration tables and runtime state variables in LTE/5G remote radio units exposed to outdoor thermal cycling and power fluctuations. IC Role / Device Role / Timing Role: Industrial-grade memory providing deterministic access for FPGA-based control firmware; leverages LB#/UB# for partial-word updates. Use Value: Dual chip-select architecture simplifies memory expansion to 64+ Mb; 80 µA max standby current at +85 °C ensures thermal margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-55ZSXI | 48-pin TSOP-I, 32Mb × 16, 55 ns, 2.2–3.6 V, 15 µA standby (typ.) | Higher standby current; lacks BYTE#-enabled 8-bit mode; wider voltage range but looser timing at low VCC | Preferred when board uses 48-pin footprint and wider supply tolerance is needed over ultra-low power |
| IS62WV51216BLL-55NLI | 48-pin TSOP-I, 32Mb × 16, 55 ns, 2.7–3.6 V, 25 µA standby (typ.) | Higher standby draw; no data retention below 2.7 V; no dedicated BYTE# pin for A−1 addressing | Selected where cost sensitivity outweighs battery-life requirements and byte-mode flexibility is unnecessary |
Compared with CY62167EV30LL-55ZSXI and IS62WV51216BLL-55NLI, the R1LV3216RSA-5SI#S0 delivers superior low-power performance (4 µA vs. ≥15 µA), native byte-mode support via BYTE#, and guaranteed 2.0 V data retention-making it optimal for battery-swappable and thermally demanding industrial deployments.
Availability
R1LV3216RSA-5SI#S0 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical event logging, automotive infotainment caching, and telecom base station control requiring stable component supply across extended temperature and long product lifecycles.
Supply support for R1LV3216RSA-5SI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV3216R Series was designed specifically for low-voltage, low-power static memory applications where battery backup, simple parallel interfacing, and robust data retention under brown-out conditions are essential-targeting industrial control, medical instrumentation, and communications equipment.
FAQ
What is the maximum access time specification for R1LV3216RSA-5SI#S0?
The R1LV3216RSA-5SI#S0 has a maximum address access time (tAA) of 55 ns over its full operating range of −40 to +85 °C and 2.7–3.6 V supply. This value is guaranteed under worst-case voltage and temperature conditions and applies to both word-mode (A0–A20) and byte-mode (A−1–A20) addressing configurations.
Does R1LV3216RSA-5SI#S0 support true 8-bit operation?
Yes, the R1LV3216RSA-5SI#S0 supports native 8-bit operation via the BYTE# pin. When BYTE# is driven low, the device enters byte mode and uses A−1 as the LSB, enabling 4M × 8-bit organization. In this mode, LB# and UB# remain functional to control individual byte lanes during writes.
What is the minimum supply voltage at which R1LV3216RSA-5SI#S0 retains stored data?
The R1LV3216RSA-5SI#S0 guarantees data retention down to 2.0 V (VDR), as specified in the Low Vcc Data Retention Characteristics table. At this voltage, standby current remains ≤80 µA up to +85 °C, allowing reliable hold functionality during brown-out or battery transition events.
Is R1LV3216RSA-5SI#S0 pin-compatible with other members of the R1LV3216R Series?
Yes, all R1LV3216R Series variants-including R1LV3216RSA-5SI#S0-share identical 52-pin µTSOP (II) pinouts and electrical signaling. Differences are limited to access speed (e.g., -5S vs. -7S) and temperature grade (R vs. I), with no pin function or timing protocol changes across the family.
How does the dual chip-select architecture (CS1# and CS2) function in R1LV3216RSA-5SI#S0?
In the R1LV3216RSA-5SI#S0, CS1# (active-low) and CS2 (active-high) operate conjunctively: the device is enabled only when CS1# = L and CS2 = H. This allows hierarchical memory decoding-e.g., using CS2 to select a memory bank and CS1# to select individual devices within that bank-enabling scalable parallel memory systems.
R1LV3216RSA-5SI#S0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 32Mbit
- Memory Organization:
- 4M x 8, 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
R1LV3216RSA-5SI#S0 FAQ
1.How can I place an order for R1LV3216RSA-5SI#S0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV3216RSA-5SI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV3216RSA-5SI#S0 reliable?
The price and inventory of R1LV3216RSA-5SI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV3216RSA-5SI#S0 is usually 5 days.
3.What payment methods are accepted for R1LV3216RSA-5SI#S0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV3216RSA-5SI#S0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV3216RSA-5SI#S0?
R1LV3216RSA-5SI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV3216RSA-5SI#S0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV3216RSA-5SI#S0?
For technical support, including R1LV3216RSA-5SI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV3216RSA-5SI#S0 requirements.
6.How does Aetrix verify that R1LV3216RSA-5SI#S0 is sourced from the original manufacturer or authorized distributors?
All R1LV3216RSA-5SI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV3216RSA-5SI#S0 meets industry standards.
7.What is the process for return or replacement of R1LV3216RSA-5SI#S0?
All R1LV3216RSA-5SI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV3216RSA-5SI#S0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV3216RSA-5SI#S0 part is unused and in its original packaging.
Return procedure for R1LV3216RSA-5SI#S0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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