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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas R1LV3216RSA-5SI#S1

Name: R1LV3216RSA-5SI#S1
Brand: Renesas
SKU: R1LV3216RSA-5SI#S1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: R1LV3216RSA-5SI#S1

Manufacturer:: Renesas

Category:: Memory

Package:: 48-TFSOP (0.724", 18.40mm Width)

Datasheet:: R1LV3216RSA-5SI#S1.pdf

Description:: IC SRAM 32MBIT PARALLEL 48TSOP I

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Product details

Overview

R1LV3216RSA-5SI#S1 from Renesas Electronics is a 32Mb low-power static RAM organized as 2M × 16-bit or 4M × 8-bit, fabricated in 0.15µm CMOS/TFT process, operating from 2.7V to 3.6V with 55 ns access time and −40°C to +85°C industrial temperature range. It supports byte/word mode selection via BYTE#, features TTL-compatible I/O, and delivers 4 µA typical standby current at 3.0V - ideal for battery-backed memory subsystems in portable instrumentation and industrial controllers.

For engineers reviewing the R1LV3216RSA-5SI#S1 datasheet, R1LV3216RSA-5SI#S1 pinout, R1LV3216RSA-5SI#S1 application, or R1LV3216RSA-5SI#S1 equivalent, this device offers verified low-voltage SRAM operation without refresh, OR-tie capable three-state outputs, and flexible chip select architecture (CS1#/CS2) enabling seamless memory expansion in space-constrained embedded designs.

Technical Context

The R1LV3216RSA-5SI#S1 implements a fully asynchronous static RAM architecture with dual chip select (CS1#, CS2), independent upper/lower byte enables (UB#, LB#), and byte-mode control (BYTE#) that reconfigures address mapping to support A−1 addressing for 8-bit operation. Its internal block diagram includes column/row decoders, sense/write amplifiers, and data selectors enabling simultaneous 16-bit word or split 8-bit byte access without clocking or refresh circuitry.

Timing is defined by strict AC parameters including tAA = 55 ns (address access), tOE = 25 ns (output enable delay), tBLZ = 5 ns (byte enable to low-Z), and tOHZ = 25 ns (output disable to high-Z), all guaranteed across −40°C to +85°C at Vcc = 2.7–3.6V. Data retention is supported down to 2.0V with ICCDR ≤ 80 µA at +85°C, enabling reliable backup during brownout conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	32 Mbit (2,097,152 × 16 or 4,194,304 × 8) - enables compact code/data storage in resource-limited microcontroller systems.
Access Time	55 ns - guarantees deterministic read latency for real-time control loops requiring sub-100 ns memory response.
Supply Voltage	2.7 V to 3.6 V - compatible with modern low-voltage logic rails and battery-powered operation without level shifting.
Standby Current	4 µA typical at 3.0 V - extends battery life in always-on monitoring devices and backup memory applications.
Operating Temperature	−40°C to +85°C - qualified for industrial environments including factory automation and outdoor telemetry nodes.
Data Retention Voltage	2.0 V minimum - maintains stored data during deep brownout or backup power transitions without external capacitor hold-up.
Package	52-pin µTSOP (II), 10.79 mm × 10.49 mm, 0.4 mm pitch - provides high pin density and PCB area efficiency versus legacy 48-pin TSOP.

Pinout & Package

Package: 52-pin micro Thin Small Outline Package (µTSOP II), 10.79 mm × 10.49 mm body, 0.4 mm lead pitch, normal-bend leads.

Pin/Terminal	Circuit Role	Design Meaning
A0–A20	Address input (word mode)	21-bit address bus supporting 2M-word addressing; A−1 used only in byte mode for extended 8-bit addressing.
DQ0–DQ15	Data I/O bidirectional	16-bit common data bus; three-state outputs enable OR-tie bus sharing without external logic.
CS1#, CS2	Chip select inputs	Two-level hierarchical chip select: CS1# active-low primary enable; CS2 active-high secondary enable for multi-chip decoding.
WE#, OE#, LB#, UB#, BYTE#	Control inputs	Asynchronous write/read/byte-enable signals; BYTE# configures memory organization between 16-bit word and 8-bit byte modes.
Vcc, Vss	Power and ground	Single 2.7–3.6 V supply; dual Vss pins improve noise immunity and reduce ground bounce in high-speed access.
NC	No connect	Unbonded pins (pins 3, 13, 25, 37, 45, 49); must remain unconnected per design specification.

Key Features

Feature	Design Value
No refresh required	True static RAM architecture eliminates DRAM-style refresh overhead and timing complexity in firmware.
TTL-compatible I/O	VIH = 2.4 V min, VIL = 0.4 V max - interoperates directly with legacy 3.3 V and 5 V logic families without interface buffers.
Byte/word mode flexibility	BYTE# pin selects between 2M×16-bit (A0–A20) and 4M×8-bit (A−1–A20) configurations - simplifies migration between data-width requirements.
Low-power standby	ISB1 ≤ 80 µA at +85°C - enables years of data retention on coin-cell batteries in metering and sensor logging applications.
OR-tie capable outputs	Three-state DQ lines support wired-OR bus topologies - reduces external logic count in multi-SRAM memory banks.

Applications

Industrial PLC Data Buffer	Portable Medical Monitor Memory
Use Scenario: Real-time acquisition and temporary storage of analog sensor readings (e.g., ECG, SpO₂) before transmission or local analysis. IC Role / Device Role / Timing Role: Asynchronous SRAM buffer interfacing directly to MCU's parallel bus; absorbs burst ADC data without DMA or cache coherency overhead. Use Value: 55 ns access time ensures no pipeline stalls during high-frequency sampling; 4 µA standby current extends single-charge battery life beyond 3 years in sleep mode.	Use Scenario: Nonvolatile data retention during power loss in handheld diagnostic tools with lithium coin-cell backup. IC Role / Device Role / Timing Role: Battery-backed memory holding calibration coefficients, last-measurement history, and fault logs across power cycles. Use Value: Guaranteed data retention down to 2.0 V with ≤80 µA current at +85°C enables robust operation under brownout and thermal stress without external regulators.
Automotive Infotainment Cache	Network Edge Router Packet Buffer
Use Scenario: Temporary storage of UI assets (icons, fonts, menu trees) in automotive head units where fast boot and low quiescent power are critical. IC Role / Device Role / Timing Role: Parallel-connected SRAM serving as zero-latency L2 cache for ARM-based application processor; accessed via dedicated AXI/AHB slave port. Use Value: −40°C to +85°C qualification meets AEC-Q100 Grade 3 requirements; 52-pin µTSOP footprint minimizes PCB area versus SOIC alternatives.	Use Scenario: Line-rate packet buffering in small-form-factor enterprise switches handling 10/100/1000BASE-T traffic. IC Role / Device Role / Timing Role: Dual-port-capable SRAM (via CS1#/CS2 arbitration) acting as shared FIFO between MAC and PHY layers. Use Value: CS1#/CS2 dual-select architecture allows interleaved read/write cycles across two independent bus masters; 55 ns tRC supports full Gigabit Ethernet throughput.

Industrial PLC Data Buffer

Portable Medical Monitor Memory

Use Scenario: Real-time acquisition and temporary storage of analog sensor readings (e.g., ECG, SpO₂) before transmission or local analysis.

IC Role / Device Role / Timing Role: Asynchronous SRAM buffer interfacing directly to MCU's parallel bus; absorbs burst ADC data without DMA or cache coherency overhead.

Use Value: 55 ns access time ensures no pipeline stalls during high-frequency sampling; 4 µA standby current extends single-charge battery life beyond 3 years in sleep mode.

Use Scenario: Nonvolatile data retention during power loss in handheld diagnostic tools with lithium coin-cell backup.

IC Role / Device Role / Timing Role: Battery-backed memory holding calibration coefficients, last-measurement history, and fault logs across power cycles.

Use Value: Guaranteed data retention down to 2.0 V with ≤80 µA current at +85°C enables robust operation under brownout and thermal stress without external regulators.

Automotive Infotainment Cache

Network Edge Router Packet Buffer

Use Scenario: Temporary storage of UI assets (icons, fonts, menu trees) in automotive head units where fast boot and low quiescent power are critical.

IC Role / Device Role / Timing Role: Parallel-connected SRAM serving as zero-latency L2 cache for ARM-based application processor; accessed via dedicated AXI/AHB slave port.

Use Value: −40°C to +85°C qualification meets AEC-Q100 Grade 3 requirements; 52-pin µTSOP footprint minimizes PCB area versus SOIC alternatives.

Use Scenario: Line-rate packet buffering in small-form-factor enterprise switches handling 10/100/1000BASE-T traffic.

IC Role / Device Role / Timing Role: Dual-port-capable SRAM (via CS1#/CS2 arbitration) acting as shared FIFO between MAC and PHY layers.

Use Value: CS1#/CS2 dual-select architecture allows interleaved read/write cycles across two independent bus masters; 55 ns tRC supports full Gigabit Ethernet throughput.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power asynchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS61LV3216-55QLI	55 ns access, 3.3 V only (3.135–3.465 V), 44-pin SOJ package, 10 µA standby at +85°C	Lacks BYTE# mode switching; fixed 2M×16 organization; higher standby current limits battery life in long-term backup	Select when board layout already uses SOJ footprint and system voltage is tightly regulated at 3.3 V ±5%.
AS6C3216-55PCN	55 ns access, 3.3 V supply, 48-pin TSOP-I, 12 µA standby at +85°C, no BYTE# pin	Fixed 2M×16 configuration; no byte-mode capability; larger 12 mm × 20 mm footprint increases PCB area vs. µTSOP	Choose for cost-sensitive industrial designs where byte-mode flexibility is unnecessary and TSOP-I compatibility is required.

Compared with IS61LV3216-55QLI and AS6C3216-55PCN, the R1LV3216RSA-5SI#S1 uniquely combines byte/word reconfiguration, ultra-low 80 µA standby at +85°C, and compact 52-pin µTSOP packaging - making it the optimal choice for battery-critical, space-constrained, and flexible-data-width applications.

Availability

R1LV3216RSA-5SI#S1 is available at Aetrix Electronics and suitable for industrial PLC data buffering, portable medical monitor memory, automotive infotainment caching, and network edge router packet buffering requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for R1LV3216RSA-5SI#S1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LV3216R Series was designed specifically for low-voltage, low-power, battery-backed memory applications demanding zero-refresh operation, wide temperature tolerance, and flexible data-width interfacing in compact form factors.

FAQ

What is the guaranteed access time for R1LV3216RSA-5SI#S1 across its full operating temperature range?

The R1LV3216RSA-5SI#S1 guarantees 55 ns maximum access time (tAA) over the full industrial temperature range of −40°C to +85°C at Vcc = 2.7 V to 3.6 V, as specified in the AC Characteristics table on page 8 of the datasheet. This value is not derated at temperature extremes and applies to both word and byte modes.

Does R1LV3216RSA-5SI#S1 support true byte-mode operation, and how is it enabled?

Yes, R1LV3216RSA-5SI#S1 supports true byte-mode operation via the BYTE# pin. When BYTE# is driven low, the device maps addresses using A−1 through A20 for 4M × 8-bit organization; LB# and UB# then control individual byte lanes. This mode requires LB# and UB# to be asserted low simultaneously during byte access, as detailed in the Operation Table on page 5.

What is the minimum supply voltage at which R1LV3216RSA-5SI#S1 retains stored data?

The R1LV3216RSA-5SI#S1 retains stored data down to 2.0 V (VDR), as confirmed in the Low Vcc Data Retention Characteristics table on page 15. At this voltage, data retention current (ICCDR) remains ≤80 µA at +85°C, enabling reliable operation during brownout events without external backup capacitors exceeding 100 µF.

Can R1LV3216RSA-5SI#S1 be used in pin-compatible replacement for older 48-pin TSOP SRAMs?

No, R1LV3216RSA-5SI#S1 uses a 52-pin µTSOP (II) package with 0.4 mm pitch and different pinout than 48-pin TSOP (I) devices. While functionally similar to R1LV3216RSA-5S%, the physical layout is incompatible - PCB redesign is required to accommodate the smaller body size, increased pin count, and relocated control signals like CS2 and BYTE#.

How does the dual chip select architecture (CS1# and CS2) function in R1LV3216RSA-5SI#S1?

In R1LV3216RSA-5SI#S1, CS1# is active-low and CS2 is active-high; both must be asserted (CS1# = L, CS2 = H) for normal read/write operations. CS2 can also independently place the device into data retention mode when CS1# is inactive, allowing selective power-down of memory banks while maintaining data integrity - a feature leveraged in multi-SRAM systems for dynamic power management.

R1LV3216RSA-5SI#S1 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 48-TFSOP (0.724", 18.40mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM

Memory Size:: 32Mbit

Memory Organization:: 4M x 8, 2M x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 55ns

Access Time:: 55 ns

Voltage - Supply:: 2.7V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 48-TSOP I

R1LV3216RSA-5SI#S1 FAQ

1.How can I place an order for R1LV3216RSA-5SI#S1 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1LV3216RSA-5SI#S1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1LV3216RSA-5SI#S1 reliable?

The price and inventory of R1LV3216RSA-5SI#S1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV3216RSA-5SI#S1 is usually 5 days.

3.What payment methods are accepted for R1LV3216RSA-5SI#S1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV3216RSA-5SI#S1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1LV3216RSA-5SI#S1?

R1LV3216RSA-5SI#S1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1LV3216RSA-5SI#S1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LV3216RSA-5SI#S1?

For technical support, including R1LV3216RSA-5SI#S1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV3216RSA-5SI#S1 requirements.

6.How does Aetrix verify that R1LV3216RSA-5SI#S1 is sourced from the original manufacturer or authorized distributors?

All R1LV3216RSA-5SI#S1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV3216RSA-5SI#S1 meets industry standards.

7.What is the process for return or replacement of R1LV3216RSA-5SI#S1?

All R1LV3216RSA-5SI#S1 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV3216RSA-5SI#S1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LV3216RSA-5SI#S1 part is unused and in its original packaging.

Return procedure for R1LV3216RSA-5SI#S1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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