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Renesas R1LV3216RSD-5SI#B0
- Part No.:
- R1LV3216RSD-5SI#B0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 52-TFSOP (0.350", 8.89mm Width)
- Datasheet:
-
R1LV3216RSD-5SI#B0.pdf
- Description:
- IC SRAM 32MBIT PAR 52TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:1,801
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Product details
Overview
R1LV3216RSD-5SI#B0 from Renesas Electronics is a 32Mb low-power static RAM organized as 2M × 16-bit or 4M × 8-bit, fabricated in 0.15µm CMOS/TFT process, operating from 2.7V to 3.6V with 55 ns access time and −40°C to +85°C industrial temperature range. It serves as non-volatile-capable memory in battery-backed systems requiring zero-refresh operation and TTL-compatible interfacing.
For engineers reviewing the R1LV3216RSD-5SI#B0 datasheet, R1LV3216RSD-5SI#B0 pinout, R1LV3216RSD-5SI#B0 application, or R1LV3216RSD-5SI#B0 equivalent, key selection criteria include its 52-pin µTSOP (II) package, 4 µA typical standby current at 3.0V, byte/word mode flexibility via BYTE#, and dual chip select architecture for memory expansion.
Technical Context
The R1LV3216RSD-5SI#B0 implements a fully asynchronous SRAM architecture with no internal clocks or refresh circuitry. Its dual chip select (CS1#, CS2) and independent byte enables (LB#, UB#) support seamless memory banking and partial-word writes without external logic.
It supports three operational modes-word (16-bit), byte (8-bit), and extended byte (A−1 addressing)-controlled by BYTE# assertion. The device uses TTL-compatible input thresholds (VIH = 2.4V, VIL = 0.4V) and provides three-state outputs with OR-tie capability, enabling direct bus connection of multiple devices.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 32 Mbit (2,097,152 × 16 or 4,194,304 × 8) |
| Access Time | 55 ns - guarantees full-speed read/write timing under worst-case industrial temp and 2.7–3.6V supply |
| Supply Voltage | 2.7–3.6 V - enables direct interface with 3.3V logic and battery-backed operation down to 2.0V for data retention |
| Standby Current | 4 µA typical at 3.0V - minimizes power draw in sleep/battery-backup states |
| Operating Temperature | −40°C to +85°C - qualified for industrial-grade embedded and automotive body electronics |
| Package | 52-pin µTSOP (II), 10.79 mm × 10.49 mm, 0.4 mm pitch - compact footprint for space-constrained PCBs |
| I/O Compatibility | TTL - eliminates level-shifting requirements when interfacing with legacy microcontrollers and FPGAs |
Pinout & Package
Package: 52-pin plastic micro Thin Small Outline Package (µTSOP II), normal-bend type, 10.79 mm × 10.49 mm, 0.4 mm pin pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address Input (word mode) | 21-bit address bus supporting 2M-word addressing; A−1 used only in byte mode |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus with three-state control; DQ15 doubles as A−1 in byte mode |
| CS1#, CS2 | Chip Select Inputs | Active-low dual-select architecture enables hierarchical memory mapping and bank isolation |
| WE#, OE#, LB#, UB# | Control Inputs | Independent write enable, output enable, and byte-lane controls allow granular 8-bit or 16-bit access |
| BYTE# | Mode Control | Selects word vs. byte addressing; must be asserted low with LB#/UB# both low for byte mode |
| Vcc, Vss | Power/Ground | Single 2.7–3.6V supply; decoupling required per JEDEC guidelines for stable high-speed operation |
| NC | No Connect | Unbonded pins (pins 3, 13, 25, 45, 49); must remain unconnected on PCB |
Key Features
| Feature | Design Value |
|---|---|
| No refresh required | Eliminates system-level refresh overhead and timing constraints - ideal for simple MCU-based designs |
| Low standby current (4 µA typ.) | Extends battery life in backup-memory applications such as real-time clocks and configuration storage |
| Byte/word mode via BYTE# | Enables flexible data path sizing without external multiplexing - reduces BOM count and layout complexity |
| OR-tie capable outputs | Allows parallel connection of multiple R1LV3216RSD-5SI#B0 devices on shared data bus without external bus transceivers |
| 2.0V data retention | Maintains stored data during brown-out or battery-switchover events - critical for fail-safe logging and state preservation |
Applications
| Industrial PLC Data Buffer | Automotive Body Control Module |
|---|---|
Use Scenario: Temporary storage of sensor logs and fault codes during vehicle ignition cycles where main power may be interrupted. IC Role / Device Role / Timing Role: Non-volatile buffer holding critical diagnostic data across power transitions using Vcc dropout detection and 2.0V data retention. Use Value: Eliminates need for external EEPROM or backup capacitor networks - reduces component count and board area. |
Use Scenario: Storing window position, mirror angle, and seat settings in centralized body controllers with battery backup. IC Role / Device Role / Timing Role: Low-leakage SRAM providing fast random-access storage for user preferences while drawing <4 µA during vehicle sleep mode. Use Value: Enables reliable parameter retention over multi-year vehicle service life without periodic refresh or wear-out concerns. |
| Medical Portable Monitor Cache | Telecom Line Card Configuration Memory |
Use Scenario: Caching waveform buffers and alarm history in portable ECG monitors powered by rechargeable Li-ion batteries. IC Role / Device Role / Timing Role: High-speed 55 ns SRAM serving as front-end data capture buffer between ADC and ARM processor - operates at full speed under 3.3V rail. Use Value: Supports continuous 1 kHz sampling without DMA bottlenecks; TTL compatibility simplifies interface to legacy medical SoCs. |
Use Scenario: Holding FPGA configuration, port mapping tables, and calibration coefficients in carrier-grade DSLAM line cards. IC Role / Device Role / Timing Role: Dual-CS expandable memory enabling modular design - CS1#/CS2 allow up to four R1LV3216RSD-5SI#B0 devices per 32-bit data bus. Use Value: Simplifies field-upgradeable firmware storage and eliminates need for complex address decoding logic. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 10 ns access time, 3.3V-only supply (3.0–3.6V), 44-pin TSOP-I package | Better speed but narrower voltage range and larger footprint; lacks 2.0V data retention | Choose for higher-speed systems with stable 3.3V rails and no battery-backup requirement |
| AS6C4008-55ZIN | 55 ns access, 2.7–5.5V supply, 48-pin TSOP-I, 4 µA standby at 3.3V | Wider voltage range but no BYTE#-controlled byte mode; incompatible pinout and control logic | Choose when 5V tolerance is needed or when migrating from older 5V designs - requires PCB redesign |
Compared with IS61LV25616AL-10TLI and AS6C4008-55ZIN, the R1LV3216RSD-5SI#B0 uniquely combines industrial temperature rating, 2.0V data retention, and µTSOP-II compactness - making it optimal for space- and power-constrained battery-backed embedded systems where reliability across voltage transients is critical.
Availability
R1LV3216RSD-5SI#B0 is available at Aetrix Electronics and suitable for industrial automation, automotive body electronics, portable medical instrumentation, and telecom infrastructure requiring stable component supply across long production lifecycles.
Supply support for R1LV3216RSD-5SI#B0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.
The R1LV3216R Series was designed specifically for low-power, battery-backed memory applications demanding zero-refresh operation, wide supply tolerance, and robust data retention - targeting industrial control, automotive subsystems, and portable equipment.
FAQ
What is the maximum data retention voltage for R1LV3216RSD-5SI#B0?
The R1LV3216RSD-5SI#B0 maintains stored data down to 2.0V (VDR min), as specified in the Low Vcc Data Retention Characteristics table on page 15 of the datasheet. This allows uninterrupted memory retention during brown-out conditions or battery voltage sag, provided CS2 or CS1# is held in the appropriate control state per the retention timing waveforms.
Does R1LV3216RSD-5SI#B0 support true 8-bit operation?
Yes, R1LV3216RSD-5SI#B0 supports native 8-bit operation via BYTE# pin assertion. When BYTE# is low and LB#/UB# are both low, the device enters byte mode where DQ0–DQ7 function as an 8-bit bus and DQ15 serves as address bit A−1. This is confirmed in the Pin Description (page 3) and Operation Table (page 5).
What is the meaning of the "I" suffix in R1LV3216RSD-5SI#B0?
The "I" in R1LV3216RSD-5SI#B0 denotes the industrial temperature grade (−40°C to +85°C), as defined in the Ordering Information table on page 1. This distinguishes it from the commercial "R" version (0°C to +70°C) and confirms qualification for extended thermal environments in automotive and industrial deployments.
Can R1LV3216RSD-5SI#B0 be used with a 3.0V-only system?
Yes, R1LV3216RSD-5SI#B0 operates reliably across 2.7V–3.6V, including nominal 3.0V systems. Its recommended operating conditions (page 6) specify 3.0V as the typical supply, and all AC/DC parameters - including 55 ns access time and 4 µA standby current - are guaranteed within this range at industrial temperatures.
How does the dual chip select (CS1#, CS2) architecture benefit system design?
The dual chip select architecture in R1LV3216RSD-5SI#B0 enables hierarchical memory decoding: CS2 acts as primary enable (active low), while CS1# serves as secondary select. This allows stacking multiple devices on the same data bus with minimal external logic - for example, using CS2 to select a memory bank and CS1# to select individual devices within that bank, simplifying large-memory expansions.
R1LV3216RSD-5SI#B0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 52-TFSOP (0.350", 8.89mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 32Mbit
- Memory Organization:
- 4M x 8, 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 52-TSOP II
R1LV3216RSD-5SI#B0 FAQ
1.How can I place an order for R1LV3216RSD-5SI#B0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV3216RSD-5SI#B0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV3216RSD-5SI#B0 reliable?
The price and inventory of R1LV3216RSD-5SI#B0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV3216RSD-5SI#B0 is usually 5 days.
3.What payment methods are accepted for R1LV3216RSD-5SI#B0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV3216RSD-5SI#B0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV3216RSD-5SI#B0?
R1LV3216RSD-5SI#B0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV3216RSD-5SI#B0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV3216RSD-5SI#B0?
For technical support, including R1LV3216RSD-5SI#B0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV3216RSD-5SI#B0 requirements.
6.How does Aetrix verify that R1LV3216RSD-5SI#B0 is sourced from the original manufacturer or authorized distributors?
All R1LV3216RSD-5SI#B0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV3216RSD-5SI#B0 meets industry standards.
7.What is the process for return or replacement of R1LV3216RSD-5SI#B0?
All R1LV3216RSD-5SI#B0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV3216RSD-5SI#B0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV3216RSD-5SI#B0 part is unused and in its original packaging.
Return procedure for R1LV3216RSD-5SI#B0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
R1LV3216RSD-5SI#B0 Tags
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