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Renesas R1LV3216RSD-5SI#S0

Part No.:
R1LV3216RSD-5SI#S0
Manufacturer:
Renesas
Category:
Memory
Package:
52-TFSOP (0.350", 8.89mm Width)
Datasheet:
AetrixR1LV3216RSD-5SI#S0.pdf
Description:
IC SRAM 32MBIT PAR 52TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,801

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Product details

Overview

R1LV3216RSD-5SI#S0 from Renesas Electronics is a 32Mb low-power static RAM organized as 2M × 16-bit or 4M × 8-bit, fabricated in 0.15µm CMOS/TFT process, operating from 2.7V to 3.6V with 55 ns access time and 4 µA typical standby current at 3.0V. It serves as non-volatile-capable battery-backed memory in portable instrumentation and industrial control modules requiring simple TTL-compatible interfacing and zero-refresh operation.

For engineers reviewing the R1LV3216RSD-5SI#S0 datasheet, R1LV3216RSD-5SI#S0 pinout, R1LV3216RSD-5SI#S0 application, or R1LV3216RSD-5SI#S0 equivalent, this device delivers deterministic static RAM behavior with byte/word mode flexibility, OR-tie capable three-state outputs, and dual chip select architecture for seamless memory expansion in space-constrained embedded systems.

Technical Context

The R1LV3216RSD-5SI#S0 implements a fully asynchronous SRAM architecture with no internal clocks or refresh circuitry, relying on external address and control timing. Its dual chip select (CS1#, CS2) and independent byte enables (LB#, UB#) support hierarchical memory mapping and partial-word writes without bus contention.

It supports two operational modes via BYTE#: word mode (A-1 unused, DQ0–DQ15 active) and byte mode (A-1 used as LSB, DQ0–DQ7 or DQ8–DQ15 selectable). Standby current drops to 4 µA at 3.0V when CS2 is asserted low or CS1# is high, enabling ultra-low-power data retention down to 2.0V VCC.

Key Specifications

Parameter Value and Actual Design Meaning
Memory capacity 32 Mbit (2,097,152 × 16-bit or 4,194,304 × 8-bit), enabling compact storage for firmware buffers or real-time data logging in resource-limited controllers.
Access time 55 ns max (tAA, tACS1, tACS2), ensuring compatibility with 18 MHz bus interfaces without wait states in microcontroller-based systems.
Supply voltage 2.7–3.6 V single supply, supporting direct integration with 3.3V logic domains and battery-backed operation without level-shifting.
Standby current 4 µA typical at 3.0V/25°C, reducing power budget impact during sleep modes in portable medical or sensor edge devices.
Data retention VCC 2.0 V minimum, allowing reliable memory hold during brown-out conditions or backup battery operation without data loss.
Package 52-pin µTSOP (II), 10.79 mm × 10.49 mm × 1.0 mm height, optimizing PCB area vs. 48-pin TSOP while maintaining standard surface-mount assembly.
I/O compatibility TTL input thresholds (VIH = 2.4 V, VIL = 0.4 V) and output drive (VOH ≥ 2.4 V @ –0.5 mA, VOL ≤ 0.4 V @ 2 mA), eliminating need for interface translators.

Pinout & Package

52-pin µTSOP (II) package (10.79 mm × 10.49 mm, 0.4 mm pitch), normal-bend lead configuration per JEDEC MO-218AC.

Pin/Terminal Circuit Role Design Meaning
A0–A20 Address inputs (word mode) 21-bit address bus supporting full 2M-word addressing; A-1 used only in byte mode as LSB.
DQ0–DQ15 Bi-directional data I/O Common data bus with three-state outputs; OR-tie capability allows parallel connection without external logic.
CS1#, CS2 Chip select controls CS1# active-low primary enable; CS2 active-high secondary enable - both required for read/write activation per operation table.
WE#, OE#, LB#, UB#, BYTE# Control inputs WE# initiates write; OE# gates output drivers; LB#/UB# select byte lanes; BYTE# configures word/byte addressing mode.
Vcc, Vss Power and ground Single 2.7–3.6V supply; dual Vss pins improve noise immunity and thermal dissipation in high-density layouts.
NC No-connect Pins 13, 25, 31, 45, 49 - electrically isolated; must remain unconnected per datasheet.

Key Features

Feature Design Value
No clock, no refresh Eliminates timing controller overhead and guarantees deterministic access latency - critical for real-time interrupt service routines.
4 µA standby current (typ.) Enables multi-year battery life in always-on monitoring nodes where memory must retain state during extended sleep cycles.
Byte/word mode selection BYTE# pin reconfigures address space and data bus usage, simplifying migration between 8-bit and 16-bit host processors without hardware change.
OR-tie capable outputs Allows multiple R1LV3216RSD-5SI#S0 devices to share a common data bus without external bus transceivers or arbitration logic.
Dual chip select architecture CS1# and CS2 provide hierarchical enable control, enabling clean partitioning of memory maps across multiple SRAMs in stacked configurations.

Applications

Portable Medical Instrumentation Industrial PLC Data Buffers

Use Scenario: Battery-powered handheld ECG analyzers capturing waveform segments during intermittent patient contact.

IC Role / Device Role / Timing Role: Non-volatile buffer storing raw analog samples prior to wireless upload; retains data during battery swap or low-power sleep.

Use Value: 4 µA standby current extends battery life beyond 12 months; 55 ns access enables real-time sample buffering at 18 kHz sampling rates.

Use Scenario: Compact programmable logic controllers managing I/O status tables and ladder logic execution history in factory automation cabinets.

IC Role / Device Role / Timing Role: Fast-access scratchpad memory holding register values, timers, and communication buffers for deterministic scan-cycle execution.

Use Value: TTL-compatible interface integrates directly with legacy 3.3V microcontrollers; dual chip select supports modular memory expansion up to 128 MB.

Automotive Diagnostic Tools Avionics Maintenance Terminals

Use Scenario: Handheld OBD-II scanners logging fault codes, live PID streams, and freeze-frame data across multiple vehicle sessions.

IC Role / Device Role / Timing Role: Primary working memory for diagnostic firmware, retaining session context and historical logs during ignition cycling.

Use Value: Data retention down to 2.0V VCC ensures no log loss during engine cranking voltage dips; -40°C to +85°C rating covers under-hood environments.

Use Scenario: Ruggedized ground-support terminals recording flight test telemetry, sensor calibration tables, and maintenance logs in hangar environments.

IC Role / Device Role / Timing Role: High-reliability memory for mission-critical configuration storage and post-flight data staging before secure transfer.

Use Value: 0.4 mm pitch µTSOP reduces board area vs. TSOP while maintaining IPC Class 3 solder joint integrity; no refresh eliminates timing failure modes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-power asynchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS61LV25616AL-10TLI 256K × 16-bit (4Mb), 10 ns access, 3.3V only, 36-pin TSOP Higher speed but lower density; lacks BYTE#-controlled byte/word mode flexibility Select when sub-10 ns timing is mandatory and memory footprint is constrained by pin count, not capacity.
AS6C4008-55PCN 512K × 8-bit (4Mb), 55 ns access, 2.7–3.6V, 32-pin SOJ 8-bit-only interface; no upper/lower byte enables or BYTE# mode switching Choose for cost-sensitive 8-bit MCU designs where byte granularity suffices and SOJ package is preferred for legacy rework.

Compared with IS61LV25616AL-10TLI and AS6C4008-55PCN, the R1LV3216RSD-5SI#S0 uniquely combines 32Mb density, 55 ns timing, byte/word configurability, and 4 µA standby in a 52-pin µTSOP - making it optimal for next-generation portable instrumentation requiring scalable memory with minimal power overhead.

Availability

R1LV3216RSD-5SI#S0 is available at Aetrix Electronics and suitable for portable medical instrumentation, industrial PLC data buffers, and automotive diagnostic tools requiring stable component supply across long-lifecycle embedded programs.

Supply support for R1LV3216RSD-5SI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The R1LV3216R Series was designed specifically for low-voltage, low-power static RAM applications demanding battery backup, simple TTL interfacing, and zero-refresh operation in space-constrained embedded systems.

FAQ

What is the operating temperature range for R1LV3216RSD-5SI#S0?

The R1LV3216RSD-5SI#S0 is rated for industrial temperature operation from –40°C to +85°C, as indicated by the "I" suffix in the part number. This range is validated per the Recommended Operating Conditions table on page 6 of the datasheet, supporting deployment in harsh environments such as factory floors or vehicle under-hood locations where thermal stability is critical for R1LV3216RSD-5SI#S0 reliability.

Does R1LV3216RSD-5SI#S0 require a refresh circuit?

No, the R1LV3216RSD-5SI#S0 is a true static RAM and requires no refresh circuitry or periodic access to retain data. Its architecture uses flip-flop-based memory cells, enabling indefinite data retention as long as power is applied and control signals meet timing specifications - a key advantage confirmed in the Features section and Operation Table of the R1LV3216RSD-5SI#S0 datasheet.

How does BYTE# pin functionality affect address mapping in R1LV3216RSD-5SI#S0?

When BYTE# is low, the R1LV3216RSD-5SI#S0 operates in byte mode: A-1 becomes the LSB of the address bus, and DQ0–DQ7 or DQ8–DQ15 are selected via LB# or UB#. When BYTE# is high, it operates in word mode: A-1 is unused, and all 16 data lines (DQ0–DQ15) are active. This dual-mode capability is explicitly defined in the Pin Description and Operation Table for R1LV3216RSD-5SI#S0.

What is the maximum data retention voltage for R1LV3216RSD-5SI#S0?

The R1LV3216RSD-5SI#S0 maintains data integrity down to 2.0 V VCC, as specified in the Low Vcc Data Retention Characteristics table on page 15. At this voltage, standby current remains below 80 µA at +85°C, enabling reliable memory hold during brown-out events or backup battery discharge - a guaranteed specification for R1LV3216RSD-5SI#S0, not a typical value.

Can R1LV3216RSD-5SI#S0 be used with 5V logic systems?

No, the R1LV3216RSD-5SI#S0 is strictly a 2.7–3.6V device with TTL-compatible input thresholds (VIH = 2.4V min, VIL = 0.4V max) and 3.3V-tolerant outputs. Direct connection to 5V logic violates Absolute Maximum Ratings for terminal voltage and risks permanent damage. Level translation is required for interoperability with 5V systems using R1LV3216RSD-5SI#S0.

R1LV3216RSD-5SI#S0 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
52-TFSOP (0.350", 8.89mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM
Memory Size:
32Mbit
Memory Organization:
4M x 8, 2M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
52-TSOP II

R1LV3216RSD-5SI#S0 FAQ

1.How can I place an order for R1LV3216RSD-5SI#S0 through Aetrix?

Please submit a Request for Quotation (RFQ) for R1LV3216RSD-5SI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for R1LV3216RSD-5SI#S0 reliable?

The price and inventory of R1LV3216RSD-5SI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV3216RSD-5SI#S0 is usually 5 days.

3.What payment methods are accepted for R1LV3216RSD-5SI#S0?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV3216RSD-5SI#S0 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for R1LV3216RSD-5SI#S0?

R1LV3216RSD-5SI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your R1LV3216RSD-5SI#S0 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for R1LV3216RSD-5SI#S0?

For technical support, including R1LV3216RSD-5SI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV3216RSD-5SI#S0 requirements.

6.How does Aetrix verify that R1LV3216RSD-5SI#S0 is sourced from the original manufacturer or authorized distributors?

All R1LV3216RSD-5SI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV3216RSD-5SI#S0 meets industry standards.

7.What is the process for return or replacement of R1LV3216RSD-5SI#S0?

All R1LV3216RSD-5SI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV3216RSD-5SI#S0, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The R1LV3216RSD-5SI#S0 part is unused and in its original packaging.

Return procedure for R1LV3216RSD-5SI#S0:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

R1LV3216RSD-5SI#S0 Tags

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