Renesas R1LV3216RSD-5SI#S0
- Part No.:
- R1LV3216RSD-5SI#S0
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 52-TFSOP (0.350", 8.89mm Width)
- Datasheet:
-
R1LV3216RSD-5SI#S0.pdf
- Description:
- IC SRAM 32MBIT PAR 52TSOP II
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
R1LV3216RSD-5SI#S0 from Renesas Electronics is a 32Mb low-power static RAM organized as 2M × 16-bit or 4M × 8-bit, fabricated in 0.15µm CMOS/TFT process, operating from 2.7V to 3.6V with 55 ns access time and 4 µA typical standby current at 3.0V. It serves as non-volatile-capable battery-backed memory in portable instrumentation and industrial control modules requiring simple TTL-compatible interfacing and zero-refresh operation.
For engineers reviewing the R1LV3216RSD-5SI#S0 datasheet, R1LV3216RSD-5SI#S0 pinout, R1LV3216RSD-5SI#S0 application, or R1LV3216RSD-5SI#S0 equivalent, this device delivers deterministic static RAM behavior with byte/word mode flexibility, OR-tie capable three-state outputs, and dual chip select architecture for seamless memory expansion in space-constrained embedded systems.
Technical Context
The R1LV3216RSD-5SI#S0 implements a fully asynchronous SRAM architecture with no internal clocks or refresh circuitry, relying on external address and control timing. Its dual chip select (CS1#, CS2) and independent byte enables (LB#, UB#) support hierarchical memory mapping and partial-word writes without bus contention.
It supports two operational modes via BYTE#: word mode (A-1 unused, DQ0–DQ15 active) and byte mode (A-1 used as LSB, DQ0–DQ7 or DQ8–DQ15 selectable). Standby current drops to 4 µA at 3.0V when CS2 is asserted low or CS1# is high, enabling ultra-low-power data retention down to 2.0V VCC.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory capacity | 32 Mbit (2,097,152 × 16-bit or 4,194,304 × 8-bit), enabling compact storage for firmware buffers or real-time data logging in resource-limited controllers. |
| Access time | 55 ns max (tAA, tACS1, tACS2), ensuring compatibility with 18 MHz bus interfaces without wait states in microcontroller-based systems. |
| Supply voltage | 2.7–3.6 V single supply, supporting direct integration with 3.3V logic domains and battery-backed operation without level-shifting. |
| Standby current | 4 µA typical at 3.0V/25°C, reducing power budget impact during sleep modes in portable medical or sensor edge devices. |
| Data retention VCC | 2.0 V minimum, allowing reliable memory hold during brown-out conditions or backup battery operation without data loss. |
| Package | 52-pin µTSOP (II), 10.79 mm × 10.49 mm × 1.0 mm height, optimizing PCB area vs. 48-pin TSOP while maintaining standard surface-mount assembly. |
| I/O compatibility | TTL input thresholds (VIH = 2.4 V, VIL = 0.4 V) and output drive (VOH ≥ 2.4 V @ –0.5 mA, VOL ≤ 0.4 V @ 2 mA), eliminating need for interface translators. |
Pinout & Package
52-pin µTSOP (II) package (10.79 mm × 10.49 mm, 0.4 mm pitch), normal-bend lead configuration per JEDEC MO-218AC.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A20 | Address inputs (word mode) | 21-bit address bus supporting full 2M-word addressing; A-1 used only in byte mode as LSB. |
| DQ0–DQ15 | Bi-directional data I/O | Common data bus with three-state outputs; OR-tie capability allows parallel connection without external logic. |
| CS1#, CS2 | Chip select controls | CS1# active-low primary enable; CS2 active-high secondary enable - both required for read/write activation per operation table. |
| WE#, OE#, LB#, UB#, BYTE# | Control inputs | WE# initiates write; OE# gates output drivers; LB#/UB# select byte lanes; BYTE# configures word/byte addressing mode. |
| Vcc, Vss | Power and ground | Single 2.7–3.6V supply; dual Vss pins improve noise immunity and thermal dissipation in high-density layouts. |
| NC | No-connect | Pins 13, 25, 31, 45, 49 - electrically isolated; must remain unconnected per datasheet. |
Key Features
| Feature | Design Value |
|---|---|
| No clock, no refresh | Eliminates timing controller overhead and guarantees deterministic access latency - critical for real-time interrupt service routines. |
| 4 µA standby current (typ.) | Enables multi-year battery life in always-on monitoring nodes where memory must retain state during extended sleep cycles. |
| Byte/word mode selection | BYTE# pin reconfigures address space and data bus usage, simplifying migration between 8-bit and 16-bit host processors without hardware change. |
| OR-tie capable outputs | Allows multiple R1LV3216RSD-5SI#S0 devices to share a common data bus without external bus transceivers or arbitration logic. |
| Dual chip select architecture | CS1# and CS2 provide hierarchical enable control, enabling clean partitioning of memory maps across multiple SRAMs in stacked configurations. |
Applications
| Portable Medical Instrumentation | Industrial PLC Data Buffers |
|---|---|
|
Use Scenario: Battery-powered handheld ECG analyzers capturing waveform segments during intermittent patient contact. IC Role / Device Role / Timing Role: Non-volatile buffer storing raw analog samples prior to wireless upload; retains data during battery swap or low-power sleep. Use Value: 4 µA standby current extends battery life beyond 12 months; 55 ns access enables real-time sample buffering at 18 kHz sampling rates. |
Use Scenario: Compact programmable logic controllers managing I/O status tables and ladder logic execution history in factory automation cabinets. IC Role / Device Role / Timing Role: Fast-access scratchpad memory holding register values, timers, and communication buffers for deterministic scan-cycle execution. Use Value: TTL-compatible interface integrates directly with legacy 3.3V microcontrollers; dual chip select supports modular memory expansion up to 128 MB. |
| Automotive Diagnostic Tools | Avionics Maintenance Terminals |
|
Use Scenario: Handheld OBD-II scanners logging fault codes, live PID streams, and freeze-frame data across multiple vehicle sessions. IC Role / Device Role / Timing Role: Primary working memory for diagnostic firmware, retaining session context and historical logs during ignition cycling. Use Value: Data retention down to 2.0V VCC ensures no log loss during engine cranking voltage dips; -40°C to +85°C rating covers under-hood environments. |
Use Scenario: Ruggedized ground-support terminals recording flight test telemetry, sensor calibration tables, and maintenance logs in hangar environments. IC Role / Device Role / Timing Role: High-reliability memory for mission-critical configuration storage and post-flight data staging before secure transfer. Use Value: 0.4 mm pitch µTSOP reduces board area vs. TSOP while maintaining IPC Class 3 solder joint integrity; no refresh eliminates timing failure modes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-power asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 256K × 16-bit (4Mb), 10 ns access, 3.3V only, 36-pin TSOP | Higher speed but lower density; lacks BYTE#-controlled byte/word mode flexibility | Select when sub-10 ns timing is mandatory and memory footprint is constrained by pin count, not capacity. |
| AS6C4008-55PCN | 512K × 8-bit (4Mb), 55 ns access, 2.7–3.6V, 32-pin SOJ | 8-bit-only interface; no upper/lower byte enables or BYTE# mode switching | Choose for cost-sensitive 8-bit MCU designs where byte granularity suffices and SOJ package is preferred for legacy rework. |
Compared with IS61LV25616AL-10TLI and AS6C4008-55PCN, the R1LV3216RSD-5SI#S0 uniquely combines 32Mb density, 55 ns timing, byte/word configurability, and 4 µA standby in a 52-pin µTSOP - making it optimal for next-generation portable instrumentation requiring scalable memory with minimal power overhead.
Availability
R1LV3216RSD-5SI#S0 is available at Aetrix Electronics and suitable for portable medical instrumentation, industrial PLC data buffers, and automotive diagnostic tools requiring stable component supply across long-lifecycle embedded programs.
Supply support for R1LV3216RSD-5SI#S0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The R1LV3216R Series was designed specifically for low-voltage, low-power static RAM applications demanding battery backup, simple TTL interfacing, and zero-refresh operation in space-constrained embedded systems.
FAQ
What is the operating temperature range for R1LV3216RSD-5SI#S0?
The R1LV3216RSD-5SI#S0 is rated for industrial temperature operation from –40°C to +85°C, as indicated by the "I" suffix in the part number. This range is validated per the Recommended Operating Conditions table on page 6 of the datasheet, supporting deployment in harsh environments such as factory floors or vehicle under-hood locations where thermal stability is critical for R1LV3216RSD-5SI#S0 reliability.
Does R1LV3216RSD-5SI#S0 require a refresh circuit?
No, the R1LV3216RSD-5SI#S0 is a true static RAM and requires no refresh circuitry or periodic access to retain data. Its architecture uses flip-flop-based memory cells, enabling indefinite data retention as long as power is applied and control signals meet timing specifications - a key advantage confirmed in the Features section and Operation Table of the R1LV3216RSD-5SI#S0 datasheet.
How does BYTE# pin functionality affect address mapping in R1LV3216RSD-5SI#S0?
When BYTE# is low, the R1LV3216RSD-5SI#S0 operates in byte mode: A-1 becomes the LSB of the address bus, and DQ0–DQ7 or DQ8–DQ15 are selected via LB# or UB#. When BYTE# is high, it operates in word mode: A-1 is unused, and all 16 data lines (DQ0–DQ15) are active. This dual-mode capability is explicitly defined in the Pin Description and Operation Table for R1LV3216RSD-5SI#S0.
What is the maximum data retention voltage for R1LV3216RSD-5SI#S0?
The R1LV3216RSD-5SI#S0 maintains data integrity down to 2.0 V VCC, as specified in the Low Vcc Data Retention Characteristics table on page 15. At this voltage, standby current remains below 80 µA at +85°C, enabling reliable memory hold during brown-out events or backup battery discharge - a guaranteed specification for R1LV3216RSD-5SI#S0, not a typical value.
Can R1LV3216RSD-5SI#S0 be used with 5V logic systems?
No, the R1LV3216RSD-5SI#S0 is strictly a 2.7–3.6V device with TTL-compatible input thresholds (VIH = 2.4V min, VIL = 0.4V max) and 3.3V-tolerant outputs. Direct connection to 5V logic violates Absolute Maximum Ratings for terminal voltage and risks permanent damage. Level translation is required for interoperability with 5V systems using R1LV3216RSD-5SI#S0.
R1LV3216RSD-5SI#S0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 52-TFSOP (0.350", 8.89mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM
- Memory Size:
- 32Mbit
- Memory Organization:
- 4M x 8, 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 52-TSOP II
R1LV3216RSD-5SI#S0 FAQ
1.How can I place an order for R1LV3216RSD-5SI#S0 through Aetrix?
Please submit a Request for Quotation (RFQ) for R1LV3216RSD-5SI#S0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for R1LV3216RSD-5SI#S0 reliable?
The price and inventory of R1LV3216RSD-5SI#S0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for R1LV3216RSD-5SI#S0 is usually 5 days.
3.What payment methods are accepted for R1LV3216RSD-5SI#S0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for R1LV3216RSD-5SI#S0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for R1LV3216RSD-5SI#S0?
R1LV3216RSD-5SI#S0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your R1LV3216RSD-5SI#S0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for R1LV3216RSD-5SI#S0?
For technical support, including R1LV3216RSD-5SI#S0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your R1LV3216RSD-5SI#S0 requirements.
6.How does Aetrix verify that R1LV3216RSD-5SI#S0 is sourced from the original manufacturer or authorized distributors?
All R1LV3216RSD-5SI#S0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that R1LV3216RSD-5SI#S0 meets industry standards.
7.What is the process for return or replacement of R1LV3216RSD-5SI#S0?
All R1LV3216RSD-5SI#S0 units undergo pre-shipment inspection (PSI). If there is an issue with R1LV3216RSD-5SI#S0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The R1LV3216RSD-5SI#S0 part is unused and in its original packaging.
Return procedure for R1LV3216RSD-5SI#S0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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